Viscous Electron Flow and Nonlinear Magnetotransport in 2D Channels

Paper details

Research paper

Experimental CharacterizationTheoretical

A. D. Levin, G. M. Gusev, A. K. Bakarov

arXiv·2026·10.5281/zenodo.17400263·arXiv:2602.02129

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

1 characterization5 properties3 figures

ExperimentalGaAsStudied MaterialInCapping Or Contact

1 characterization5 properties3 figures

ExperimentalGaAsStudied MaterialInCapping Or Contact

GaAs

Studied Material

Also known as

gallium arsenide

studied material

Indium

Capping Or Contact

Also known as

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Viscous Electron Flow and Nonlinear Magnetotransport in 2D Channels | Matter42 Literature

Type	Label	Value	Material	Sample	Source
Carrier Density	electron density	900000000000cm⁻²	GaAs	High-quality GaAs quantum well device fabricated as a Hall-b Nominally identical GaAs quantum well device measured under	—
Mobility	electron mobility	2000000cm²/Vs	GaAs	High-quality GaAs quantum well device fabricated as a Hall-b Nominally identical GaAs quantum well device measured under	—
Thickness	quantum well width	14nm	GaAs	High-quality GaAs quantum well device fabricated as a Hall-b Nominally identical GaAs quantum well device measured under	—
Length	channel width	6um	GaAs	High-quality GaAs quantum well device fabricated as a Hall-b Nominally identical GaAs quantum well device measured under	—
Length	middle segment length	20um	GaAs	High-quality GaAs quantum well device fabricated as a Hall-b Nominally identical GaAs quantum well device measured under	—

Type	Label	Value	Material	Sample	Source
Carrier Density	electron density	900000000000cm⁻²	GaAs	High-quality GaAs quantum well device fabricated as a Hall-b Nominally identical GaAs quantum well device measured under	—
Mobility	electron mobility	2000000cm²/Vs	GaAs	High-quality GaAs quantum well device fabricated as a Hall-b Nominally identical GaAs quantum well device measured under	—
Thickness	quantum well width	14nm	GaAs	High-quality GaAs quantum well device fabricated as a Hall-b Nominally identical GaAs quantum well device measured under	—
Length	channel width	6um	GaAs	High-quality GaAs quantum well device fabricated as a Hall-b Nominally identical GaAs quantum well device measured under	—
Length	middle segment length	20um	GaAs	High-quality GaAs quantum well device fabricated as a Hall-b Nominally identical GaAs quantum well device measured under	—

Type	Label	Value	Material	Sample	Source
Carrier Density	electron density	900000000000cm⁻²	GaAs	High-quality GaAs quantum well device fabricated as a Hall-b Nominally identical GaAs quantum well device measured under	—
Mobility	electron mobility	2000000cm²/Vs	GaAs	High-quality GaAs quantum well device fabricated as a Hall-b Nominally identical GaAs quantum well device measured under	—
Thickness	quantum well width	14nm	GaAs	High-quality GaAs quantum well device fabricated as a Hall-b Nominally identical GaAs quantum well device measured under	—
Length	channel width	6um	GaAs	High-quality GaAs quantum well device fabricated as a Hall-b Nominally identical GaAs quantum well device measured under	—
Length	middle segment length	20um	GaAs	High-quality GaAs quantum well device fabricated as a Hall-b Nominally identical GaAs quantum well device measured under	—

Type	Label	Value	Material	Sample	Source
Carrier Density	electron density	900000000000cm⁻²	GaAs	High-quality GaAs quantum well device fabricated as a Hall-b Nominally identical GaAs quantum well device measured under	—
Mobility	electron mobility	2000000cm²/Vs	GaAs	High-quality GaAs quantum well device fabricated as a Hall-b Nominally identical GaAs quantum well device measured under	—
Thickness	quantum well width	14nm	GaAs	High-quality GaAs quantum well device fabricated as a Hall-b Nominally identical GaAs quantum well device measured under	—
Length	channel width	6um	GaAs	High-quality GaAs quantum well device fabricated as a Hall-b Nominally identical GaAs quantum well device measured under	—
Length	middle segment length	20um	GaAs	High-quality GaAs quantum well device fabricated as a Hall-b Nominally identical GaAs quantum well device measured under	—