Abstract

Terahertz scanning near-field optical microscope (THz-SNOM) is employed to measure ultrafast evolution of THz conductivity spectra after photoexcitation of GaAs and InP wafers using ultrashort laser pulses. Unlike in GaAs, the THz photoconductivity decay in InP is controlled mainly by the diffusion of electrons away from the photoexcited area, and also by the drift due to band-bending at the surface of the semiconductor. Several general strategies of analysis of signals measured using THz-SNOM are proposed and discussed, and the accuracy of the obtained near-field photoconductivity spectra is estimated.

Abstract

Terahertz scanning near-field optical microscope (THz-SNOM) is employed to measure ultrafast evolution of THz conductivity spectra after photoexcitation of GaAs and InP wafers using ultrashort laser pulses. Unlike in GaAs, the THz photoconductivity decay in InP is controlled mainly by the diffusion of electrons away from the photoexcited area, and also by the drift due to band-bending at the surface of the semiconductor. Several general strategies of analysis of signals measured using THz-SNOM are proposed and discussed, and the accuracy of the obtained near-field photoconductivity spectra is estimated.

Abstract

Terahertz scanning near-field optical microscope (THz-SNOM) is employed to measure ultrafast evolution of THz conductivity spectra after photoexcitation of GaAs and InP wafers using ultrashort laser pulses. Unlike in GaAs, the THz photoconductivity decay in InP is controlled mainly by the diffusion of electrons away from the photoexcited area, and also by the drift due to band-bending at the surface of the semiconductor. Several general strategies of analysis of signals measured using THz-SNOM are proposed and discussed, and the accuracy of the obtained near-field photoconductivity spectra is estimated.

Abstract

Terahertz scanning near-field optical microscope (THz-SNOM) is employed to measure ultrafast evolution of THz conductivity spectra after photoexcitation of GaAs and InP wafers using ultrashort laser pulses. Unlike in GaAs, the THz photoconductivity decay in InP is controlled mainly by the diffusion of electrons away from the photoexcited area, and also by the drift due to band-bending at the surface of the semiconductor. Several general strategies of analysis of signals measured using THz-SNOM are proposed and discussed, and the accuracy of the obtained near-field photoconductivity spectra is estimated.