Research paperComputational DFTTheoreticalComputational study of III-V direct-gap semiconductors for thermoradiative cell applicationsMuhammad Yusrul Hanna, Muhammad Aziz Majidi, Ahmad R. T. NugrahaNanotechnology·2023·10.1088/1361-6528/acd1f7·arXiv:2304.14917AbstractWe investigate the performance of thermoradiative (TR) cells using the III-V group of semiconductors, which include GaAs, GaSb, InAs, and InP, with the aim of determining their efficiency and finding the best TR cell materials among the III-V group. The TR cells generate electricity from thermal radiation, and their efficiency is influenced by several factors such as the bandgap, temperature difference, and absorption spectrum. To create a realistic model, we incorporate sub-bandgap and heat losses in our calculations and utilize density-functional theory to determine the energy gap and optical properties of each material.Read more
DFT-modeled zinc-blende GaAs unit cell / bulk semiconductor for thermoradiative-cell property evaluation.No measurements recordedSimulated Supercell DftGaAsStudied MaterialExpand
DFT-modeled zinc-blende GaSb unit cell / bulk semiconductor for thermoradiative-cell property evaluation.No measurements recordedSimulated Supercell DftGaSbStudied MaterialExpand
DFT-modeled zinc-blende InAs unit cell / bulk semiconductor for thermoradiative-cell property evaluation.No measurements recordedSimulated Supercell DftInAsStudied MaterialExpand
DFT-modeled zinc-blende InP unit cell / bulk semiconductor for thermoradiative-cell property evaluation.No measurements recordedSimulated Supercell DftInPStudied MaterialExpand
Research paperComputational DFTTheoreticalComputational study of III-V direct-gap semiconductors for thermoradiative cell applicationsMuhammad Yusrul Hanna, Muhammad Aziz Majidi, Ahmad R. T. NugrahaNanotechnology·2023·10.1088/1361-6528/acd1f7·arXiv:2304.14917AbstractWe investigate the performance of thermoradiative (TR) cells using the III-V group of semiconductors, which include GaAs, GaSb, InAs, and InP, with the aim of determining their efficiency and finding the best TR cell materials among the III-V group. The TR cells generate electricity from thermal radiation, and their efficiency is influenced by several factors such as the bandgap, temperature difference, and absorption spectrum. To create a realistic model, we incorporate sub-bandgap and heat losses in our calculations and utilize density-functional theory to determine the energy gap and optical properties of each material.Read more
DFT-modeled zinc-blende GaAs unit cell / bulk semiconductor for thermoradiative-cell property evaluation.No measurements recordedSimulated Supercell DftGaAsStudied MaterialExpand
DFT-modeled zinc-blende GaSb unit cell / bulk semiconductor for thermoradiative-cell property evaluation.No measurements recordedSimulated Supercell DftGaSbStudied MaterialExpand
DFT-modeled zinc-blende InAs unit cell / bulk semiconductor for thermoradiative-cell property evaluation.No measurements recordedSimulated Supercell DftInAsStudied MaterialExpand
DFT-modeled zinc-blende InP unit cell / bulk semiconductor for thermoradiative-cell property evaluation.No measurements recordedSimulated Supercell DftInPStudied MaterialExpand
Research paperComputational DFTTheoreticalComputational study of III-V direct-gap semiconductors for thermoradiative cell applicationsMuhammad Yusrul Hanna, Muhammad Aziz Majidi, Ahmad R. T. NugrahaNanotechnology·2023·10.1088/1361-6528/acd1f7·arXiv:2304.14917AbstractWe investigate the performance of thermoradiative (TR) cells using the III-V group of semiconductors, which include GaAs, GaSb, InAs, and InP, with the aim of determining their efficiency and finding the best TR cell materials among the III-V group. The TR cells generate electricity from thermal radiation, and their efficiency is influenced by several factors such as the bandgap, temperature difference, and absorption spectrum. To create a realistic model, we incorporate sub-bandgap and heat losses in our calculations and utilize density-functional theory to determine the energy gap and optical properties of each material.Read more
DFT-modeled zinc-blende GaAs unit cell / bulk semiconductor for thermoradiative-cell property evaluation.No measurements recordedSimulated Supercell DftGaAsStudied MaterialExpand
DFT-modeled zinc-blende GaSb unit cell / bulk semiconductor for thermoradiative-cell property evaluation.No measurements recordedSimulated Supercell DftGaSbStudied MaterialExpand
DFT-modeled zinc-blende InAs unit cell / bulk semiconductor for thermoradiative-cell property evaluation.No measurements recordedSimulated Supercell DftInAsStudied MaterialExpand
DFT-modeled zinc-blende InP unit cell / bulk semiconductor for thermoradiative-cell property evaluation.No measurements recordedSimulated Supercell DftInPStudied MaterialExpand
Research paperComputational DFTTheoreticalComputational study of III-V direct-gap semiconductors for thermoradiative cell applicationsMuhammad Yusrul Hanna, Muhammad Aziz Majidi, Ahmad R. T. NugrahaNanotechnology·2023·10.1088/1361-6528/acd1f7·arXiv:2304.14917AbstractWe investigate the performance of thermoradiative (TR) cells using the III-V group of semiconductors, which include GaAs, GaSb, InAs, and InP, with the aim of determining their efficiency and finding the best TR cell materials among the III-V group. The TR cells generate electricity from thermal radiation, and their efficiency is influenced by several factors such as the bandgap, temperature difference, and absorption spectrum. To create a realistic model, we incorporate sub-bandgap and heat losses in our calculations and utilize density-functional theory to determine the energy gap and optical properties of each material.Read more
DFT-modeled zinc-blende GaAs unit cell / bulk semiconductor for thermoradiative-cell property evaluation.No measurements recordedSimulated Supercell DftGaAsStudied MaterialExpand
DFT-modeled zinc-blende GaSb unit cell / bulk semiconductor for thermoradiative-cell property evaluation.No measurements recordedSimulated Supercell DftGaSbStudied MaterialExpand
DFT-modeled zinc-blende InAs unit cell / bulk semiconductor for thermoradiative-cell property evaluation.No measurements recordedSimulated Supercell DftInAsStudied MaterialExpand
DFT-modeled zinc-blende InP unit cell / bulk semiconductor for thermoradiative-cell property evaluation.No measurements recordedSimulated Supercell DftInPStudied MaterialExpand
