Numerical analysis of absorption coefficient based on direct band-to-band absorption and impurity-state transitions; dispersion included via wavelength-dependent refractive index.
Settings
systemGaAs
quantityabsorption coefficient vs wavelength
dispersiontrue
band gap eV1.42
constant refractive index casetrue
impurity state density percent2, 5, 10, 20, 30
impurity state energy below conduction band eV0.07, 0.12, 0.17
Conditions
context:modeled_absorption
validation:{"quantities":["refractive index"],"references":["Marple 1964","Rakić and Majewski 1996"],"techniques":[],"source_type":"literature_experimental_data"}
Numerical analysis of absorption coefficient based on direct band-to-band absorption and impurity-state transitions; dispersion included via wavelength-dependent refractive index.
Settings
systemGaAs
quantityabsorption coefficient vs wavelength
dispersiontrue
band gap eV1.42
constant refractive index casetrue
impurity state density percent2, 5, 10, 20, 30
impurity state energy below conduction band eV0.07, 0.12, 0.17
Conditions
context:modeled_absorption
validation:{"quantities":["refractive index"],"references":["Marple 1964","Rakić and Majewski 1996"],"techniques":[],"source_type":"literature_experimental_data"}
Numerical analysis of absorption coefficient based on direct band-to-band absorption and impurity-state transitions; dispersion included via wavelength-dependent refractive index.
Settings
systemGaAs
quantityabsorption coefficient vs wavelength
dispersiontrue
band gap eV1.42
constant refractive index casetrue
impurity state density percent2, 5, 10, 20, 30
impurity state energy below conduction band eV0.07, 0.12, 0.17
Conditions
context:modeled_absorption
validation:{"quantities":["refractive index"],"references":["Marple 1964","Rakić and Majewski 1996"],"techniques":[],"source_type":"literature_experimental_data"}
Numerical analysis of absorption coefficient based on direct band-to-band absorption and impurity-state transitions; dispersion included via wavelength-dependent refractive index.
Settings
systemGaAs
quantityabsorption coefficient vs wavelength
dispersiontrue
band gap eV1.42
constant refractive index casetrue
impurity state density percent2, 5, 10, 20, 30
impurity state energy below conduction band eV0.07, 0.12, 0.17
Conditions
context:modeled_absorption
validation:{"quantities":["refractive index"],"references":["Marple 1964","Rakić and Majewski 1996"],"techniques":[],"source_type":"literature_experimental_data"}
