Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
No measurements recorded
Related documents with shared materials, methods, properties, or citations.
An Atomistically Informed Device Engineering (AIDE) Method Realized: A case study in GaAs
Monte Carlo Calculations of the Extraction of Scintillation Light from Cryogenic N-type GaAs
Energy Effective Mass Dependence of Electron Tunneling Through CdS/CdSe, AlxGa1-xAs/GaAs and AlSb/InAs Multiple Quantum Barriers
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Polarization Spectroscopy of High-Order Harmonic Generation in Gallium Arsenide
Microstructured large-area photoconductive terahertz emitters driven at high average power
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Effect of electric field on excitons in wide quantum wells
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High-power single-cycle THz emission from large-area photoconductive emitters at 400 kHz
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
No measurements recorded
Related documents with shared materials, methods, properties, or citations.
An Atomistically Informed Device Engineering (AIDE) Method Realized: A case study in GaAs
Monte Carlo Calculations of the Extraction of Scintillation Light from Cryogenic N-type GaAs
Energy Effective Mass Dependence of Electron Tunneling Through CdS/CdSe, AlxGa1-xAs/GaAs and AlSb/InAs Multiple Quantum Barriers
Sb2S3 and GaAs Absorber Layer-based Quantum Dot Solar Cells with Cadmium Telluride-based HTL: A Comparative Study
Designing Flat Bands and Pseudo-Landau Levels in GaAs with Patterned Gates
Effect of Dispersion and Different Carrier Transitions on Absorption Characteristics of GaAs
Polarization Spectroscopy of High-Order Harmonic Generation in Gallium Arsenide
Microstructured large-area photoconductive terahertz emitters driven at high average power
The case of the missing gallium vacancy in gallium arsenide: A multiscale explanation
Effect of electric field on excitons in wide quantum wells
Topological Nanophononic Interface States Using High-order Bandgaps in the One-Dimensional Su-Schrieffer-Heeger Model
High-power single-cycle THz emission from large-area photoconductive emitters at 400 kHz
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
No measurements recorded
Related documents with shared materials, methods, properties, or citations.
An Atomistically Informed Device Engineering (AIDE) Method Realized: A case study in GaAs
Monte Carlo Calculations of the Extraction of Scintillation Light from Cryogenic N-type GaAs
Energy Effective Mass Dependence of Electron Tunneling Through CdS/CdSe, AlxGa1-xAs/GaAs and AlSb/InAs Multiple Quantum Barriers
Sb2S3 and GaAs Absorber Layer-based Quantum Dot Solar Cells with Cadmium Telluride-based HTL: A Comparative Study
Designing Flat Bands and Pseudo-Landau Levels in GaAs with Patterned Gates
Effect of Dispersion and Different Carrier Transitions on Absorption Characteristics of GaAs
Polarization Spectroscopy of High-Order Harmonic Generation in Gallium Arsenide
Microstructured large-area photoconductive terahertz emitters driven at high average power
The case of the missing gallium vacancy in gallium arsenide: A multiscale explanation
Effect of electric field on excitons in wide quantum wells
Topological Nanophononic Interface States Using High-order Bandgaps in the One-Dimensional Su-Schrieffer-Heeger Model
High-power single-cycle THz emission from large-area photoconductive emitters at 400 kHz
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
No measurements recorded
Related documents with shared materials, methods, properties, or citations.
An Atomistically Informed Device Engineering (AIDE) Method Realized: A case study in GaAs
Monte Carlo Calculations of the Extraction of Scintillation Light from Cryogenic N-type GaAs
Energy Effective Mass Dependence of Electron Tunneling Through CdS/CdSe, AlxGa1-xAs/GaAs and AlSb/InAs Multiple Quantum Barriers
Sb2S3 and GaAs Absorber Layer-based Quantum Dot Solar Cells with Cadmium Telluride-based HTL: A Comparative Study
Designing Flat Bands and Pseudo-Landau Levels in GaAs with Patterned Gates
Effect of Dispersion and Different Carrier Transitions on Absorption Characteristics of GaAs
Polarization Spectroscopy of High-Order Harmonic Generation in Gallium Arsenide
Microstructured large-area photoconductive terahertz emitters driven at high average power
The case of the missing gallium vacancy in gallium arsenide: A multiscale explanation
Effect of electric field on excitons in wide quantum wells
Topological Nanophononic Interface States Using High-order Bandgaps in the One-Dimensional Su-Schrieffer-Heeger Model
High-power single-cycle THz emission from large-area photoconductive emitters at 400 kHz
