Research paperComputational Kinetic ModelSb₂S₃ and GaAs Absorber Layer-based Quantum Dot Solar Cells with Cadmium Telluride-based HTL: A Comparative StudySayak Banerjee, Anupam Chetia, Satyajit Sahu2025·10.48550/arxiv.2507.17877·arXiv:2507.17877AbstractThe numerical analysis has been carried out using SCAPS-1D (Solar Cell Capacitance Simulator-1D). The structure of the QDSCs under study are: FTO/TiO₂/CdS/Sb₂S₃/CuI/C and FTO/TiO₂/CdS/GaAs/CuI/C. Critical parameters, including temperature, back contact work function, series and shunt resistances, were meticulously adjusted in the simulations, demonstrating that the maximum efficiency attained by Sb₂S₃ and GaAs absorber layer based QDSC is 15.94% and 26.95% respectively.Read more
SCAPS-1D simulated QDSC with FTO/TiO₂/CdS/Sb₂S₃/CuI/Carbon stack.1 propertySimulatedSb₂S₃Studied MaterialExpand
SCAPS-1D simulated QDSC with FTO/TiO₂/CdS/GaAs/CuI/Carbon stack.1 propertySimulatedGaAsStudied MaterialExpand
Research paperComputational Kinetic ModelSb₂S₃ and GaAs Absorber Layer-based Quantum Dot Solar Cells with Cadmium Telluride-based HTL: A Comparative StudySayak Banerjee, Anupam Chetia, Satyajit Sahu2025·10.48550/arxiv.2507.17877·arXiv:2507.17877AbstractThe numerical analysis has been carried out using SCAPS-1D (Solar Cell Capacitance Simulator-1D). The structure of the QDSCs under study are: FTO/TiO₂/CdS/Sb₂S₃/CuI/C and FTO/TiO₂/CdS/GaAs/CuI/C. Critical parameters, including temperature, back contact work function, series and shunt resistances, were meticulously adjusted in the simulations, demonstrating that the maximum efficiency attained by Sb₂S₃ and GaAs absorber layer based QDSC is 15.94% and 26.95% respectively.Read more
SCAPS-1D simulated QDSC with FTO/TiO₂/CdS/Sb₂S₃/CuI/Carbon stack.1 propertySimulatedSb₂S₃Studied MaterialExpand
SCAPS-1D simulated QDSC with FTO/TiO₂/CdS/GaAs/CuI/Carbon stack.1 propertySimulatedGaAsStudied MaterialExpand
Research paperComputational Kinetic ModelSb₂S₃ and GaAs Absorber Layer-based Quantum Dot Solar Cells with Cadmium Telluride-based HTL: A Comparative StudySayak Banerjee, Anupam Chetia, Satyajit Sahu2025·10.48550/arxiv.2507.17877·arXiv:2507.17877AbstractThe numerical analysis has been carried out using SCAPS-1D (Solar Cell Capacitance Simulator-1D). The structure of the QDSCs under study are: FTO/TiO₂/CdS/Sb₂S₃/CuI/C and FTO/TiO₂/CdS/GaAs/CuI/C. Critical parameters, including temperature, back contact work function, series and shunt resistances, were meticulously adjusted in the simulations, demonstrating that the maximum efficiency attained by Sb₂S₃ and GaAs absorber layer based QDSC is 15.94% and 26.95% respectively.Read more
SCAPS-1D simulated QDSC with FTO/TiO₂/CdS/Sb₂S₃/CuI/Carbon stack.1 propertySimulatedSb₂S₃Studied MaterialExpand
SCAPS-1D simulated QDSC with FTO/TiO₂/CdS/GaAs/CuI/Carbon stack.1 propertySimulatedGaAsStudied MaterialExpand
Research paperComputational Kinetic ModelSb₂S₃ and GaAs Absorber Layer-based Quantum Dot Solar Cells with Cadmium Telluride-based HTL: A Comparative StudySayak Banerjee, Anupam Chetia, Satyajit Sahu2025·10.48550/arxiv.2507.17877·arXiv:2507.17877AbstractThe numerical analysis has been carried out using SCAPS-1D (Solar Cell Capacitance Simulator-1D). The structure of the QDSCs under study are: FTO/TiO₂/CdS/Sb₂S₃/CuI/C and FTO/TiO₂/CdS/GaAs/CuI/C. Critical parameters, including temperature, back contact work function, series and shunt resistances, were meticulously adjusted in the simulations, demonstrating that the maximum efficiency attained by Sb₂S₃ and GaAs absorber layer based QDSC is 15.94% and 26.95% respectively.Read more
SCAPS-1D simulated QDSC with FTO/TiO₂/CdS/Sb₂S₃/CuI/Carbon stack.1 propertySimulatedSb₂S₃Studied MaterialExpand
SCAPS-1D simulated QDSC with FTO/TiO₂/CdS/GaAs/CuI/Carbon stack.1 propertySimulatedGaAsStudied MaterialExpand
