Research paperTheoreticalComputed Band StructureDesigning Flat Bands and Pseudo-Landau Levels in GaAs with Patterned GatesPierre A. Pantaleón, Zhen Zhan, Siddhartha E. Morales, Gerardo G. NaumisarXiv·2025·10.1038/s41467-022-34734-3·arXiv:2412.04547AbstractWe investigate the electronic properties of two-dimensional electron gases (2DEGs) subjected to a periodic patterned gate. By incorporating the superlattice (SL) potential induced by patterning into the Schrödinger equation, we develop a methodology for obtaining exact analytical solutions. These solutions enable us to construct a comprehensive phase diagram illustrating the emergence of narrow bands and pseudo-Landau levels driven by the SL potential. To complement the analytical approach, we employ a standard plane-wave formalism to track the evolution of the band structure as the SL strength increases. By breaking the inversion symmetry of the SL potential, we found a nontrivial Berry curvature. Furthermore, we introduce a self-consistent Hartree screening to account for the interplay between the SL potential and electronic interactions. Our findings not only reveal the emergence of a non-trivial quantum geometry and a competition between SL strength and electron-electron interactions, but also highlight the value of exact analytical solutions for understanding and engineering electronic phases in patterned 2DEG systems.Read more
Model two-dimensional electron gas in a GaAs heterostructure subject to a periodic patterned gate superlattice potential.3 propertiesSimulatedGaAsStudied MaterialExpand
Research paperTheoreticalComputed Band StructureDesigning Flat Bands and Pseudo-Landau Levels in GaAs with Patterned GatesPierre A. Pantaleón, Zhen Zhan, Siddhartha E. Morales, Gerardo G. NaumisarXiv·2025·10.1038/s41467-022-34734-3·arXiv:2412.04547AbstractWe investigate the electronic properties of two-dimensional electron gases (2DEGs) subjected to a periodic patterned gate. By incorporating the superlattice (SL) potential induced by patterning into the Schrödinger equation, we develop a methodology for obtaining exact analytical solutions. These solutions enable us to construct a comprehensive phase diagram illustrating the emergence of narrow bands and pseudo-Landau levels driven by the SL potential. To complement the analytical approach, we employ a standard plane-wave formalism to track the evolution of the band structure as the SL strength increases. By breaking the inversion symmetry of the SL potential, we found a nontrivial Berry curvature. Furthermore, we introduce a self-consistent Hartree screening to account for the interplay between the SL potential and electronic interactions. Our findings not only reveal the emergence of a non-trivial quantum geometry and a competition between SL strength and electron-electron interactions, but also highlight the value of exact analytical solutions for understanding and engineering electronic phases in patterned 2DEG systems.Read more
Model two-dimensional electron gas in a GaAs heterostructure subject to a periodic patterned gate superlattice potential.3 propertiesSimulatedGaAsStudied MaterialExpand
Research paperTheoreticalComputed Band StructureDesigning Flat Bands and Pseudo-Landau Levels in GaAs with Patterned GatesPierre A. Pantaleón, Zhen Zhan, Siddhartha E. Morales, Gerardo G. NaumisarXiv·2025·10.1038/s41467-022-34734-3·arXiv:2412.04547AbstractWe investigate the electronic properties of two-dimensional electron gases (2DEGs) subjected to a periodic patterned gate. By incorporating the superlattice (SL) potential induced by patterning into the Schrödinger equation, we develop a methodology for obtaining exact analytical solutions. These solutions enable us to construct a comprehensive phase diagram illustrating the emergence of narrow bands and pseudo-Landau levels driven by the SL potential. To complement the analytical approach, we employ a standard plane-wave formalism to track the evolution of the band structure as the SL strength increases. By breaking the inversion symmetry of the SL potential, we found a nontrivial Berry curvature. Furthermore, we introduce a self-consistent Hartree screening to account for the interplay between the SL potential and electronic interactions. Our findings not only reveal the emergence of a non-trivial quantum geometry and a competition between SL strength and electron-electron interactions, but also highlight the value of exact analytical solutions for understanding and engineering electronic phases in patterned 2DEG systems.Read more
Model two-dimensional electron gas in a GaAs heterostructure subject to a periodic patterned gate superlattice potential.3 propertiesSimulatedGaAsStudied MaterialExpand
Research paperTheoreticalComputed Band StructureDesigning Flat Bands and Pseudo-Landau Levels in GaAs with Patterned GatesPierre A. Pantaleón, Zhen Zhan, Siddhartha E. Morales, Gerardo G. NaumisarXiv·2025·10.1038/s41467-022-34734-3·arXiv:2412.04547AbstractWe investigate the electronic properties of two-dimensional electron gases (2DEGs) subjected to a periodic patterned gate. By incorporating the superlattice (SL) potential induced by patterning into the Schrödinger equation, we develop a methodology for obtaining exact analytical solutions. These solutions enable us to construct a comprehensive phase diagram illustrating the emergence of narrow bands and pseudo-Landau levels driven by the SL potential. To complement the analytical approach, we employ a standard plane-wave formalism to track the evolution of the band structure as the SL strength increases. By breaking the inversion symmetry of the SL potential, we found a nontrivial Berry curvature. Furthermore, we introduce a self-consistent Hartree screening to account for the interplay between the SL potential and electronic interactions. Our findings not only reveal the emergence of a non-trivial quantum geometry and a competition between SL strength and electron-electron interactions, but also highlight the value of exact analytical solutions for understanding and engineering electronic phases in patterned 2DEG systems.Read more
Model two-dimensional electron gas in a GaAs heterostructure subject to a periodic patterned gate superlattice potential.3 propertiesSimulatedGaAsStudied MaterialExpand