Edge polaritons at metal-insulator boundaries in a phase separated correlated oxide

Paper details

Research paper

Experimental CharacterizationTheoretical

Weiwei Luo, Adrien Bercher, Claribel Dominguez, Javier del Valle et al.

arXiv preprint·2025·10.48550/arxiv.2506.03647·arXiv:2506.03647

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

3 characterizations8 properties2 figures

ExperimentalNdNiO₃Studied Material

1 characterization2 properties2 figures

ExperimentalNdNiO₃Studied Material

NdNiO₃

Studied Material

Also known as

NNO

studied material

LaAlO₃

Substrate / Dielectric

Also known as

Related documents with shared materials, methods, properties, or citations.

Edge polaritons at metal-insulator boundaries in a phase separated correlated oxide | Matter42 Literature

Type	Label	Value	Material	Sample	Source
Fet On Off Ratio	metal-insulator transition	sharp transition with thermal hysteresis about 25 K	NdNiO₃	10 nm epitaxial NdNiO₃ film on (100)-oriented LaAlO₃ substra	—
Fet Threshold Voltage	TMIT	95K	NdNiO₃	10 nm epitaxial NdNiO₃ film on (100)-oriented LaAlO₃ substra	—
Ir Band Position	reflectivity crossover	750cm⁻¹	NdNiO₃	10 nm epitaxial NdNiO₃ film on (100)-oriented LaAlO₃ substra	—
Ir Band Position	laser frequency	940cm⁻¹	NdNiO₃	10 nm epitaxial NdNiO₃ film on (100)-oriented LaAlO₃ substra	—
Ir Band Position	epsilon metallic state	-230+160i	NdNiO₃	10 nm epitaxial NdNiO₃ film on (100)-oriented LaAlO₃ substra	—
Ir Band Position	epsilon insulating state	30+5i	NdNiO₃	10 nm epitaxial NdNiO₃ film on (100)-oriented LaAlO₃ substra	—
Raman Peak Fwhm	edge phase peak FWHM	170-190nm	NdNiO₃	10 nm epitaxial NdNiO₃ film on (100)-oriented LaAlO₃ substra 40 nm epitaxial NdNiO₃ film used for comparison in near-fiel	—
Fet Sheet Resistance	insulating island diameter	600nm	NdNiO₃	10 nm epitaxial NdNiO₃ film on (100)-oriented LaAlO₃ substra 40 nm epitaxial NdNiO₃ film used for comparison in near-fiel	—

Type	Label	Value	Material	Sample	Source
Fet On Off Ratio	metal-insulator transition	sharp transition with thermal hysteresis about 25 K	NdNiO₃	10 nm epitaxial NdNiO₃ film on (100)-oriented LaAlO₃ substra	—
Fet Threshold Voltage	TMIT	95K	NdNiO₃	10 nm epitaxial NdNiO₃ film on (100)-oriented LaAlO₃ substra	—
Ir Band Position	reflectivity crossover	750cm⁻¹	NdNiO₃	10 nm epitaxial NdNiO₃ film on (100)-oriented LaAlO₃ substra	—
Ir Band Position	laser frequency	940cm⁻¹	NdNiO₃	10 nm epitaxial NdNiO₃ film on (100)-oriented LaAlO₃ substra	—
Ir Band Position	epsilon metallic state	-230+160i	NdNiO₃	10 nm epitaxial NdNiO₃ film on (100)-oriented LaAlO₃ substra	—
Ir Band Position	epsilon insulating state	30+5i	NdNiO₃	10 nm epitaxial NdNiO₃ film on (100)-oriented LaAlO₃ substra	—
Raman Peak Fwhm	edge phase peak FWHM	170-190nm	NdNiO₃	10 nm epitaxial NdNiO₃ film on (100)-oriented LaAlO₃ substra 40 nm epitaxial NdNiO₃ film used for comparison in near-fiel	—
Fet Sheet Resistance	insulating island diameter	600nm	NdNiO₃	10 nm epitaxial NdNiO₃ film on (100)-oriented LaAlO₃ substra 40 nm epitaxial NdNiO₃ film used for comparison in near-fiel	—

Type	Label	Value	Material	Sample	Source
Fet On Off Ratio	metal-insulator transition	sharp transition with thermal hysteresis about 25 K	NdNiO₃	10 nm epitaxial NdNiO₃ film on (100)-oriented LaAlO₃ substra	—
Fet Threshold Voltage	TMIT	95K	NdNiO₃	10 nm epitaxial NdNiO₃ film on (100)-oriented LaAlO₃ substra	—
Ir Band Position	reflectivity crossover	750cm⁻¹	NdNiO₃	10 nm epitaxial NdNiO₃ film on (100)-oriented LaAlO₃ substra	—
Ir Band Position	laser frequency	940cm⁻¹	NdNiO₃	10 nm epitaxial NdNiO₃ film on (100)-oriented LaAlO₃ substra	—
Ir Band Position	epsilon metallic state	-230+160i	NdNiO₃	10 nm epitaxial NdNiO₃ film on (100)-oriented LaAlO₃ substra	—
Ir Band Position	epsilon insulating state	30+5i	NdNiO₃	10 nm epitaxial NdNiO₃ film on (100)-oriented LaAlO₃ substra	—
Raman Peak Fwhm	edge phase peak FWHM	170-190nm	NdNiO₃	10 nm epitaxial NdNiO₃ film on (100)-oriented LaAlO₃ substra 40 nm epitaxial NdNiO₃ film used for comparison in near-fiel	—
Fet Sheet Resistance	insulating island diameter	600nm	NdNiO₃	10 nm epitaxial NdNiO₃ film on (100)-oriented LaAlO₃ substra 40 nm epitaxial NdNiO₃ film used for comparison in near-fiel	—

Type	Label	Value	Material	Sample	Source
Fet On Off Ratio	metal-insulator transition	sharp transition with thermal hysteresis about 25 K	NdNiO₃	10 nm epitaxial NdNiO₃ film on (100)-oriented LaAlO₃ substra	—
Fet Threshold Voltage	TMIT	95K	NdNiO₃	10 nm epitaxial NdNiO₃ film on (100)-oriented LaAlO₃ substra	—
Ir Band Position	reflectivity crossover	750cm⁻¹	NdNiO₃	10 nm epitaxial NdNiO₃ film on (100)-oriented LaAlO₃ substra	—
Ir Band Position	laser frequency	940cm⁻¹	NdNiO₃	10 nm epitaxial NdNiO₃ film on (100)-oriented LaAlO₃ substra	—
Ir Band Position	epsilon metallic state	-230+160i	NdNiO₃	10 nm epitaxial NdNiO₃ film on (100)-oriented LaAlO₃ substra	—
Ir Band Position	epsilon insulating state	30+5i	NdNiO₃	10 nm epitaxial NdNiO₃ film on (100)-oriented LaAlO₃ substra	—
Raman Peak Fwhm	edge phase peak FWHM	170-190nm	NdNiO₃	10 nm epitaxial NdNiO₃ film on (100)-oriented LaAlO₃ substra 40 nm epitaxial NdNiO₃ film used for comparison in near-fiel	—
Fet Sheet Resistance	insulating island diameter	600nm	NdNiO₃	10 nm epitaxial NdNiO₃ film on (100)-oriented LaAlO₃ substra 40 nm epitaxial NdNiO₃ film used for comparison in near-fiel	—