Abstract

We demonstrate the laser-induced control over spin-wave transport in a magnonic crystal waveguide formed from a semiconductor slab placed on a ferrite film. We studied a bilayer magnonic crystal with periodic grooves on the top of an n-type GaAs slab oriented toward a YIG film. Microwave spectroscopy and Brillouin light scattering were used to observe the laser-induced magnonic gap, and numerical studies related the optical control of gap frequency and position to the variation of charge-carrier concentration in GaAs.

Abstract

We demonstrate the laser-induced control over spin-wave transport in a magnonic crystal waveguide formed from a semiconductor slab placed on a ferrite film. We studied a bilayer magnonic crystal with periodic grooves on the top of an n-type GaAs slab oriented toward a YIG film. Microwave spectroscopy and Brillouin light scattering were used to observe the laser-induced magnonic gap, and numerical studies related the optical control of gap frequency and position to the variation of charge-carrier concentration in GaAs.

Abstract

We demonstrate the laser-induced control over spin-wave transport in a magnonic crystal waveguide formed from a semiconductor slab placed on a ferrite film. We studied a bilayer magnonic crystal with periodic grooves on the top of an n-type GaAs slab oriented toward a YIG film. Microwave spectroscopy and Brillouin light scattering were used to observe the laser-induced magnonic gap, and numerical studies related the optical control of gap frequency and position to the variation of charge-carrier concentration in GaAs.

Abstract

We demonstrate the laser-induced control over spin-wave transport in a magnonic crystal waveguide formed from a semiconductor slab placed on a ferrite film. We studied a bilayer magnonic crystal with periodic grooves on the top of an n-type GaAs slab oriented toward a YIG film. Microwave spectroscopy and Brillouin light scattering were used to observe the laser-induced magnonic gap, and numerical studies related the optical control of gap frequency and position to the variation of charge-carrier concentration in GaAs.