Excitation of surface plasmon-polaritons through optically-induced ultrafast transient gratings

Olesia Pashina; Albert Seredin; Giulia Crotti; Giuseppe Della Valle; Andrey Bogdanov; Mihail Petrov; Costantino De Angelis

doi:10.48550/arxiv.2411.17314

Paper details

Research paper

Computational Kinetic ModelOther Computational

Excitation of surface plasmon-polaritons through optically-induced ultrafast transient gratings

Olesia Pashina, Albert Seredin, Giulia Crotti, Giuseppe Della Valle et al.

arXiv·2024·10.48550/arxiv.2411.17314·arXiv:2411.17314

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Simulated 300 nm GaAs thin film on Ag substrate used to model transient grating formation and SPP excitation at the GaAs/Ag interface.

3 properties

GaAsStudied MaterialAgCapping Or Contact

Materials

GaAs

Studied Material

studied material

Capping Or Contact

capping or contact

Characterization

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Excitation of surface plasmon-polaritons through optically-induced ultrafast transient gratings | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Transient Grating Period	grating period	1100nm	GaAs	Simulated 300 nm GaAs thin film on Ag substrate used to mode	—
Carrier Concentration	non-thermalized electron concentration	1e+21cm⁻³	GaAs	Simulated 300 nm GaAs thin film on Ag substrate used to mode	—
Carrier Temperature	thermalized carrier temperature	8×10^4–9×10^4K	GaAs	Simulated 300 nm GaAs thin film on Ag substrate used to mode	—

Properties

Type	Label	Value	Material	Sample	Source
Transient Grating Period	grating period	1100nm	GaAs	Simulated 300 nm GaAs thin film on Ag substrate used to mode	—
Carrier Concentration	non-thermalized electron concentration	1e+21cm⁻³	GaAs	Simulated 300 nm GaAs thin film on Ag substrate used to mode	—
Carrier Temperature	thermalized carrier temperature	8×10^4–9×10^4K	GaAs	Simulated 300 nm GaAs thin film on Ag substrate used to mode	—

Properties

Type	Label	Value	Material	Sample	Source
Transient Grating Period	grating period	1100nm	GaAs	Simulated 300 nm GaAs thin film on Ag substrate used to mode	—
Carrier Concentration	non-thermalized electron concentration	1e+21cm⁻³	GaAs	Simulated 300 nm GaAs thin film on Ag substrate used to mode	—
Carrier Temperature	thermalized carrier temperature	8×10^4–9×10^4K	GaAs	Simulated 300 nm GaAs thin film on Ag substrate used to mode	—

Properties

Type	Label	Value	Material	Sample	Source
Transient Grating Period	grating period	1100nm	GaAs	Simulated 300 nm GaAs thin film on Ag substrate used to mode	—
Carrier Concentration	non-thermalized electron concentration	1e+21cm⁻³	GaAs	Simulated 300 nm GaAs thin film on Ag substrate used to mode	—
Carrier Temperature	thermalized carrier temperature	8×10^4–9×10^4K	GaAs	Simulated 300 nm GaAs thin film on Ag substrate used to mode	—

Excitation of surface plasmon-polaritons through optically-induced ultrafast transient gratings

Samples

Simulated 300 nm GaAs thin film on Ag substrate used to model transient grating formation and SPP excitation at the GaAs/Ag interface.

Materials

Characterization

Why these are connected

Excitation of surface plasmon-polaritons through optically-induced ultrafast transient gratings

Samples

Simulated 300 nm GaAs thin film on Ag substrate used to model transient grating formation and SPP excitation at the GaAs/Ag interface.

Materials

Characterization

Why these are connected

Excitation of surface plasmon-polaritons through optically-induced ultrafast transient gratings

Samples

Simulated 300 nm GaAs thin film on Ag substrate used to model transient grating formation and SPP excitation at the GaAs/Ag interface.

Materials

Characterization

Why these are connected

Excitation of surface plasmon-polaritons through optically-induced ultrafast transient gratings

Samples

Simulated 300 nm GaAs thin film on Ag substrate used to model transient grating formation and SPP excitation at the GaAs/Ag interface.

Materials

Characterization

Why these are connected

Excitation of surface plasmon-polaritons through optically-induced ultrafast transient gratings

Samples

Simulated 300 nm GaAs thin film on Ag substrate used to model transient grating formation and SPP excitation at the GaAs/Ag interface.

Materials

Characterization

Why these are connected

Excitation of surface plasmon-polaritons through optically-induced ultrafast transient gratings

Samples

Simulated 300 nm GaAs thin film on Ag substrate used to model transient grating formation and SPP excitation at the GaAs/Ag interface.

Materials

Characterization

Why these are connected

Excitation of surface plasmon-polaritons through optically-induced ultrafast transient gratings

Samples

Simulated 300 nm GaAs thin film on Ag substrate used to model transient grating formation and SPP excitation at the GaAs/Ag interface.

Materials

Characterization

Why these are connected

Excitation of surface plasmon-polaritons through optically-induced ultrafast transient gratings

Samples

Simulated 300 nm GaAs thin film on Ag substrate used to model transient grating formation and SPP excitation at the GaAs/Ag interface.

Materials

Characterization

Why these are connected

Properties

Simulations

Properties

Simulations

Properties

Simulations

Properties

Simulations