Optimum Design of GaAs/AlGaAs Surface-Relief VCSELs with Single-Mode Operation at 808 nm

Hassan Hooshdar Rostami; Vahid Ahmadi; Saeed Pahlavan

doi:10.1109/iicm65053.2024.10824469

Paper details

Research paper

Computational Kinetic Model

Optimum Design of GaAs/AlGaAs Surface-Relief VCSELs with Single-Mode Operation at 808 nm

Hassan Hooshdar Rostami, Vahid Ahmadi, Saeed Pahlavan

IEEE·2020·10.1109/iicm65053.2024.10824469·arXiv:2312.07569

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Simulated surface-relief VCSEL structure based on GaAs/AlGaAs with Au contacts, oxide aperture, quantum wells, DBR mirrors, and a surface-relief filter for single-mode operation at 808 nm.

6 properties

GaAsStudied MaterialAl0.2Ga0.8AsStudied MaterialAl0.9Ga0.1AsStudied MaterialAl0.45Ga0.55AsStudied MaterialAl0.4Ga0.6AsStudied MaterialAl0.2Ga0.6In0.2AsStudied MaterialAl0.98Ga0.02AsStudied MaterialAlxOyStudied MaterialAuCapping Or Contact

Materials

GaAs

Studied Material

studied material

Al0.2Ga0.8As

Studied Material

studied material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Optimum Design of GaAs/AlGaAs Surface-Relief VCSELs with Single-Mode Operation at 808 nm | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Optical Wavelength	lasing wavelength	808nm	GaAs Al0.2Ga0.8As Al0.9Ga0.1As Al0.45Ga0.55As Al0.4Ga0.6As Al0.2Ga0.6In0.2As Al0.98Ga0.02As AlxOy Au	Simulated surface-relief VCSEL structure based on GaAs/AlGaA	—
Device Dimension	mesa diameter	33um	GaAs Al0.2Ga0.8As Al0.9Ga0.1As Al0.45Ga0.55As Al0.4Ga0.6As Al0.2Ga0.6In0.2As Al0.98Ga0.02As AlxOy Au	Simulated surface-relief VCSEL structure based on GaAs/AlGaA	—
Optimal Surface Relief Filter Diameter Ratio	best filter diameter / dmesa	0.55	GaAs Al0.2Ga0.8As Al0.9Ga0.1As Al0.45Ga0.55As Al0.4Ga0.6As Al0.2Ga0.6In0.2As Al0.98Ga0.02As AlxOy Au	Simulated surface-relief VCSEL structure based on GaAs/AlGaA	—
Optimal Surface Relief Filter Diameter Ratio	best filter diameter / dmesa	0.55	GaAs Al0.2Ga0.8As Al0.9Ga0.1As Al0.45Ga0.55As Al0.4Ga0.6As Al0.2Ga0.6In0.2As Al0.98Ga0.02As AlxOy Au	Simulated surface-relief VCSEL structure based on GaAs/AlGaA	—
Optimal Surface Relief Filter Diameter Ratio	best filter diameter / dmesa	0.5	GaAs Al0.2Ga0.8As Al0.9Ga0.1As Al0.45Ga0.55As Al0.4Ga0.6As Al0.2Ga0.6In0.2As Al0.98Ga0.02As AlxOy Au	Simulated surface-relief VCSEL structure based on GaAs/AlGaA	—
Optimal Surface Relief Filter Diameter Ratio	best filter diameter / dmesa	0.6	GaAs Al0.2Ga0.8As Al0.9Ga0.1As Al0.45Ga0.55As Al0.4Ga0.6As Al0.2Ga0.6In0.2As Al0.98Ga0.02As AlxOy Au	Simulated surface-relief VCSEL structure based on GaAs/AlGaA	—

Properties

Type	Label	Value	Material	Sample	Source
Optical Wavelength	lasing wavelength	808nm	GaAs Al0.2Ga0.8As Al0.9Ga0.1As Al0.45Ga0.55As Al0.4Ga0.6As Al0.2Ga0.6In0.2As Al0.98Ga0.02As AlxOy Au	Simulated surface-relief VCSEL structure based on GaAs/AlGaA	—
Device Dimension	mesa diameter	33um	GaAs Al0.2Ga0.8As Al0.9Ga0.1As Al0.45Ga0.55As Al0.4Ga0.6As Al0.2Ga0.6In0.2As Al0.98Ga0.02As AlxOy Au	Simulated surface-relief VCSEL structure based on GaAs/AlGaA	—
Optimal Surface Relief Filter Diameter Ratio	best filter diameter / dmesa	0.55	GaAs Al0.2Ga0.8As Al0.9Ga0.1As Al0.45Ga0.55As Al0.4Ga0.6As Al0.2Ga0.6In0.2As Al0.98Ga0.02As AlxOy Au	Simulated surface-relief VCSEL structure based on GaAs/AlGaA	—
Optimal Surface Relief Filter Diameter Ratio	best filter diameter / dmesa	0.55	GaAs Al0.2Ga0.8As Al0.9Ga0.1As Al0.45Ga0.55As Al0.4Ga0.6As Al0.2Ga0.6In0.2As Al0.98Ga0.02As AlxOy Au	Simulated surface-relief VCSEL structure based on GaAs/AlGaA	—
Optimal Surface Relief Filter Diameter Ratio	best filter diameter / dmesa	0.5	GaAs Al0.2Ga0.8As Al0.9Ga0.1As Al0.45Ga0.55As Al0.4Ga0.6As Al0.2Ga0.6In0.2As Al0.98Ga0.02As AlxOy Au	Simulated surface-relief VCSEL structure based on GaAs/AlGaA	—
Optimal Surface Relief Filter Diameter Ratio	best filter diameter / dmesa	0.6	GaAs Al0.2Ga0.8As Al0.9Ga0.1As Al0.45Ga0.55As Al0.4Ga0.6As Al0.2Ga0.6In0.2As Al0.98Ga0.02As AlxOy Au	Simulated surface-relief VCSEL structure based on GaAs/AlGaA	—

Properties

Type	Label	Value	Material	Sample	Source
Optical Wavelength	lasing wavelength	808nm	GaAs Al0.2Ga0.8As Al0.9Ga0.1As Al0.45Ga0.55As Al0.4Ga0.6As Al0.2Ga0.6In0.2As Al0.98Ga0.02As AlxOy Au	Simulated surface-relief VCSEL structure based on GaAs/AlGaA	—
Device Dimension	mesa diameter	33um	GaAs Al0.2Ga0.8As Al0.9Ga0.1As Al0.45Ga0.55As Al0.4Ga0.6As Al0.2Ga0.6In0.2As Al0.98Ga0.02As AlxOy Au	Simulated surface-relief VCSEL structure based on GaAs/AlGaA	—
Optimal Surface Relief Filter Diameter Ratio	best filter diameter / dmesa	0.55	GaAs Al0.2Ga0.8As Al0.9Ga0.1As Al0.45Ga0.55As Al0.4Ga0.6As Al0.2Ga0.6In0.2As Al0.98Ga0.02As AlxOy Au	Simulated surface-relief VCSEL structure based on GaAs/AlGaA	—
Optimal Surface Relief Filter Diameter Ratio	best filter diameter / dmesa	0.55	GaAs Al0.2Ga0.8As Al0.9Ga0.1As Al0.45Ga0.55As Al0.4Ga0.6As Al0.2Ga0.6In0.2As Al0.98Ga0.02As AlxOy Au	Simulated surface-relief VCSEL structure based on GaAs/AlGaA	—
Optimal Surface Relief Filter Diameter Ratio	best filter diameter / dmesa	0.5	GaAs Al0.2Ga0.8As Al0.9Ga0.1As Al0.45Ga0.55As Al0.4Ga0.6As Al0.2Ga0.6In0.2As Al0.98Ga0.02As AlxOy Au	Simulated surface-relief VCSEL structure based on GaAs/AlGaA	—
Optimal Surface Relief Filter Diameter Ratio	best filter diameter / dmesa	0.6	GaAs Al0.2Ga0.8As Al0.9Ga0.1As Al0.45Ga0.55As Al0.4Ga0.6As Al0.2Ga0.6In0.2As Al0.98Ga0.02As AlxOy Au	Simulated surface-relief VCSEL structure based on GaAs/AlGaA	—

Properties

Type	Label	Value	Material	Sample	Source
Optical Wavelength	lasing wavelength	808nm	GaAs Al0.2Ga0.8As Al0.9Ga0.1As Al0.45Ga0.55As Al0.4Ga0.6As Al0.2Ga0.6In0.2As Al0.98Ga0.02As AlxOy Au	Simulated surface-relief VCSEL structure based on GaAs/AlGaA	—
Device Dimension	mesa diameter	33um	GaAs Al0.2Ga0.8As Al0.9Ga0.1As Al0.45Ga0.55As Al0.4Ga0.6As Al0.2Ga0.6In0.2As Al0.98Ga0.02As AlxOy Au	Simulated surface-relief VCSEL structure based on GaAs/AlGaA	—
Optimal Surface Relief Filter Diameter Ratio	best filter diameter / dmesa	0.55	GaAs Al0.2Ga0.8As Al0.9Ga0.1As Al0.45Ga0.55As Al0.4Ga0.6As Al0.2Ga0.6In0.2As Al0.98Ga0.02As AlxOy Au	Simulated surface-relief VCSEL structure based on GaAs/AlGaA	—
Optimal Surface Relief Filter Diameter Ratio	best filter diameter / dmesa	0.55	GaAs Al0.2Ga0.8As Al0.9Ga0.1As Al0.45Ga0.55As Al0.4Ga0.6As Al0.2Ga0.6In0.2As Al0.98Ga0.02As AlxOy Au	Simulated surface-relief VCSEL structure based on GaAs/AlGaA	—
Optimal Surface Relief Filter Diameter Ratio	best filter diameter / dmesa	0.5	GaAs Al0.2Ga0.8As Al0.9Ga0.1As Al0.45Ga0.55As Al0.4Ga0.6As Al0.2Ga0.6In0.2As Al0.98Ga0.02As AlxOy Au	Simulated surface-relief VCSEL structure based on GaAs/AlGaA	—
Optimal Surface Relief Filter Diameter Ratio	best filter diameter / dmesa	0.6	GaAs Al0.2Ga0.8As Al0.9Ga0.1As Al0.45Ga0.55As Al0.4Ga0.6As Al0.2Ga0.6In0.2As Al0.98Ga0.02As AlxOy Au	Simulated surface-relief VCSEL structure based on GaAs/AlGaA	—

Optimum Design of GaAs/AlGaAs Surface-Relief VCSELs with Single-Mode Operation at 808 nm

Samples

Simulated surface-relief VCSEL structure based on GaAs/AlGaAs with Au contacts, oxide aperture, quantum wells, DBR mirrors, and a surface-relief filter for single-mode operation at 808 nm.

Materials

Why these are connected

Optimum Design of GaAs/AlGaAs Surface-Relief VCSELs with Single-Mode Operation at 808 nm

Samples

Simulated surface-relief VCSEL structure based on GaAs/AlGaAs with Au contacts, oxide aperture, quantum wells, DBR mirrors, and a surface-relief filter for single-mode operation at 808 nm.

Materials

Why these are connected

Optimum Design of GaAs/AlGaAs Surface-Relief VCSELs with Single-Mode Operation at 808 nm

Samples

Simulated surface-relief VCSEL structure based on GaAs/AlGaAs with Au contacts, oxide aperture, quantum wells, DBR mirrors, and a surface-relief filter for single-mode operation at 808 nm.

Materials

Why these are connected

Optimum Design of GaAs/AlGaAs Surface-Relief VCSELs with Single-Mode Operation at 808 nm

Samples

Simulated surface-relief VCSEL structure based on GaAs/AlGaAs with Au contacts, oxide aperture, quantum wells, DBR mirrors, and a surface-relief filter for single-mode operation at 808 nm.

Materials

Why these are connected

Optimum Design of GaAs/AlGaAs Surface-Relief VCSELs with Single-Mode Operation at 808 nm

Samples

Simulated surface-relief VCSEL structure based on GaAs/AlGaAs with Au contacts, oxide aperture, quantum wells, DBR mirrors, and a surface-relief filter for single-mode operation at 808 nm.

Materials

Why these are connected

Optimum Design of GaAs/AlGaAs Surface-Relief VCSELs with Single-Mode Operation at 808 nm

Samples

Simulated surface-relief VCSEL structure based on GaAs/AlGaAs with Au contacts, oxide aperture, quantum wells, DBR mirrors, and a surface-relief filter for single-mode operation at 808 nm.

Materials

Why these are connected

Optimum Design of GaAs/AlGaAs Surface-Relief VCSELs with Single-Mode Operation at 808 nm

Samples

Simulated surface-relief VCSEL structure based on GaAs/AlGaAs with Au contacts, oxide aperture, quantum wells, DBR mirrors, and a surface-relief filter for single-mode operation at 808 nm.

Materials

Why these are connected

Optimum Design of GaAs/AlGaAs Surface-Relief VCSELs with Single-Mode Operation at 808 nm

Samples

Simulated surface-relief VCSEL structure based on GaAs/AlGaAs with Au contacts, oxide aperture, quantum wells, DBR mirrors, and a surface-relief filter for single-mode operation at 808 nm.

Materials

Why these are connected

Properties

Simulations

Properties

Simulations

Properties

Simulations

Properties

Simulations