Effect of current on terahertz plasmons in AlGaN/GaN heterostructures

M. Dub; P. Sai; Y. Ivonyak; P. Prystawko; W. Knap; S. Rumyantsev

doi:10.1063/5.0285068

Paper details

Research paper

Experimental Characterization

Effect of current on terahertz plasmons in AlGaN/GaN heterostructures

M. Dub, P. Sai, Y. Ivonyak, P. Prystawko et al.

2025·10.1063/5.0285068·arXiv:2506.10553

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Large-area grating-gate plasmonic crystal S₇ fabricated from a commercial AlGaN/GaN heterostructure with source, drain, and gate terminals.

2 preparations3 characterizations4 properties3 figures

ExperimentalAlGaN/GaN heterostructureStudied MaterialGaNStudied MaterialAl0.25Ga0.75NStudied MaterialAlNStudied MaterialSiCSubstrate / Dielectric

Gateless periodic plasmonic crystal S₄ with interdigitated ohmic contacts and alternating active/etched cavities.

3 preparations3 characterizations4 properties3 figures

ExperimentalAlGaN/GaN heterostructureStudied MaterialGaNStudied MaterialAl0.25Ga0.75NStudied MaterialAlNStudied MaterialSiCSubstrate / Dielectric

Gateless periodic plasmonic crystal S₆ with interdigitated ohmic contacts and alternating active/etched cavities.

3 preparations3 characterizations4 properties3 figures

ExperimentalAlGaN/GaN heterostructureStudied MaterialGaNStudied MaterialAl0.25Ga0.75NStudied MaterialAlNStudied MaterialSiCSubstrate / Dielectric

Materials

AlGaN/GaN heterostructure

Studied Material

Also known as

plasmonic crystalPC

studied material

GaN

Studied Material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Effect of current on terahertz plasmons in AlGaN/GaN heterostructures | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Sample Active Area	active area	2.89mm²	AlGaN/GaN heterostructure	Large-area grating-gate plasmonic crystal S₇ fabricated from	—
Sample Active Area	active area	6.25mm²	AlGaN/GaN heterostructure	Gateless periodic plasmonic crystal S₄ with interdigitated o	—
Sample Active Area	active area	6.25mm²	AlGaN/GaN heterostructure	Gateless periodic plasmonic crystal S₆ with interdigitated o	—
Channel Width	active channel width	1.7mm	AlGaN/GaN heterostructure	Large-area grating-gate plasmonic crystal S₇ fabricated from	—
Channel Width	active channel width	600mm	AlGaN/GaN heterostructure	Gateless periodic plasmonic crystal S₄ with interdigitated o	—
Channel Width	active channel width	700mm	AlGaN/GaN heterostructure	Gateless periodic plasmonic crystal S₆ with interdigitated o	—
Lateral Cavity Length	gated/ungated cavity lengths	0/3	AlGaN/GaN heterostructure	Gateless periodic plasmonic crystal S₄ with interdigitated o	—
Lateral Cavity Length	gated/ungated cavity lengths	0/2	AlGaN/GaN heterostructure	Gateless periodic plasmonic crystal S₆ with interdigitated o	—
Lateral Cavity Length	gated/ungated cavity lengths	0.9/0.06	AlGaN/GaN heterostructure	Large-area grating-gate plasmonic crystal S₇ fabricated from	—
Cavity Count	gated/ungated cavity count	0/245	AlGaN/GaN heterostructure	Gateless periodic plasmonic crystal S₄ with interdigitated o	—
Cavity Count	gated/ungated cavity count	0/267	AlGaN/GaN heterostructure	Gateless periodic plasmonic crystal S₆ with interdigitated o	—
Cavity Count	gated/ungated cavity count	550/550	AlGaN/GaN heterostructure	Large-area grating-gate plasmonic crystal S₇ fabricated from	—

Properties

Type	Label	Value	Material	Sample	Source
Sample Active Area	active area	2.89mm²	AlGaN/GaN heterostructure	Large-area grating-gate plasmonic crystal S₇ fabricated from	—
Sample Active Area	active area	6.25mm²	AlGaN/GaN heterostructure	Gateless periodic plasmonic crystal S₄ with interdigitated o	—
Sample Active Area	active area	6.25mm²	AlGaN/GaN heterostructure	Gateless periodic plasmonic crystal S₆ with interdigitated o	—
Channel Width	active channel width	1.7mm	AlGaN/GaN heterostructure	Large-area grating-gate plasmonic crystal S₇ fabricated from	—
Channel Width	active channel width	600mm	AlGaN/GaN heterostructure	Gateless periodic plasmonic crystal S₄ with interdigitated o	—
Channel Width	active channel width	700mm	AlGaN/GaN heterostructure	Gateless periodic plasmonic crystal S₆ with interdigitated o	—
Lateral Cavity Length	gated/ungated cavity lengths	0/3	AlGaN/GaN heterostructure	Gateless periodic plasmonic crystal S₄ with interdigitated o	—
Lateral Cavity Length	gated/ungated cavity lengths	0/2	AlGaN/GaN heterostructure	Gateless periodic plasmonic crystal S₆ with interdigitated o	—
Lateral Cavity Length	gated/ungated cavity lengths	0.9/0.06	AlGaN/GaN heterostructure	Large-area grating-gate plasmonic crystal S₇ fabricated from	—
Cavity Count	gated/ungated cavity count	0/245	AlGaN/GaN heterostructure	Gateless periodic plasmonic crystal S₄ with interdigitated o	—
Cavity Count	gated/ungated cavity count	0/267	AlGaN/GaN heterostructure	Gateless periodic plasmonic crystal S₆ with interdigitated o	—
Cavity Count	gated/ungated cavity count	550/550	AlGaN/GaN heterostructure	Large-area grating-gate plasmonic crystal S₇ fabricated from	—

Properties

Type	Label	Value	Material	Sample	Source
Sample Active Area	active area	2.89mm²	AlGaN/GaN heterostructure	Large-area grating-gate plasmonic crystal S₇ fabricated from	—
Sample Active Area	active area	6.25mm²	AlGaN/GaN heterostructure	Gateless periodic plasmonic crystal S₄ with interdigitated o	—
Sample Active Area	active area	6.25mm²	AlGaN/GaN heterostructure	Gateless periodic plasmonic crystal S₆ with interdigitated o	—
Channel Width	active channel width	1.7mm	AlGaN/GaN heterostructure	Large-area grating-gate plasmonic crystal S₇ fabricated from	—
Channel Width	active channel width	600mm	AlGaN/GaN heterostructure	Gateless periodic plasmonic crystal S₄ with interdigitated o	—
Channel Width	active channel width	700mm	AlGaN/GaN heterostructure	Gateless periodic plasmonic crystal S₆ with interdigitated o	—
Lateral Cavity Length	gated/ungated cavity lengths	0/3	AlGaN/GaN heterostructure	Gateless periodic plasmonic crystal S₄ with interdigitated o	—
Lateral Cavity Length	gated/ungated cavity lengths	0/2	AlGaN/GaN heterostructure	Gateless periodic plasmonic crystal S₆ with interdigitated o	—
Lateral Cavity Length	gated/ungated cavity lengths	0.9/0.06	AlGaN/GaN heterostructure	Large-area grating-gate plasmonic crystal S₇ fabricated from	—
Cavity Count	gated/ungated cavity count	0/245	AlGaN/GaN heterostructure	Gateless periodic plasmonic crystal S₄ with interdigitated o	—
Cavity Count	gated/ungated cavity count	0/267	AlGaN/GaN heterostructure	Gateless periodic plasmonic crystal S₆ with interdigitated o	—
Cavity Count	gated/ungated cavity count	550/550	AlGaN/GaN heterostructure	Large-area grating-gate plasmonic crystal S₇ fabricated from	—

Properties

Type	Label	Value	Material	Sample	Source
Sample Active Area	active area	2.89mm²	AlGaN/GaN heterostructure	Large-area grating-gate plasmonic crystal S₇ fabricated from	—
Sample Active Area	active area	6.25mm²	AlGaN/GaN heterostructure	Gateless periodic plasmonic crystal S₄ with interdigitated o	—
Sample Active Area	active area	6.25mm²	AlGaN/GaN heterostructure	Gateless periodic plasmonic crystal S₆ with interdigitated o	—
Channel Width	active channel width	1.7mm	AlGaN/GaN heterostructure	Large-area grating-gate plasmonic crystal S₇ fabricated from	—
Channel Width	active channel width	600mm	AlGaN/GaN heterostructure	Gateless periodic plasmonic crystal S₄ with interdigitated o	—
Channel Width	active channel width	700mm	AlGaN/GaN heterostructure	Gateless periodic plasmonic crystal S₆ with interdigitated o	—
Lateral Cavity Length	gated/ungated cavity lengths	0/3	AlGaN/GaN heterostructure	Gateless periodic plasmonic crystal S₄ with interdigitated o	—
Lateral Cavity Length	gated/ungated cavity lengths	0/2	AlGaN/GaN heterostructure	Gateless periodic plasmonic crystal S₆ with interdigitated o	—
Lateral Cavity Length	gated/ungated cavity lengths	0.9/0.06	AlGaN/GaN heterostructure	Large-area grating-gate plasmonic crystal S₇ fabricated from	—
Cavity Count	gated/ungated cavity count	0/245	AlGaN/GaN heterostructure	Gateless periodic plasmonic crystal S₄ with interdigitated o	—
Cavity Count	gated/ungated cavity count	0/267	AlGaN/GaN heterostructure	Gateless periodic plasmonic crystal S₆ with interdigitated o	—
Cavity Count	gated/ungated cavity count	550/550	AlGaN/GaN heterostructure	Large-area grating-gate plasmonic crystal S₇ fabricated from	—

Effect of current on terahertz plasmons in AlGaN/GaN heterostructures

Samples

Large-area grating-gate plasmonic crystal S₇ fabricated from a commercial AlGaN/GaN heterostructure with source, drain, and gate terminals.

Gateless periodic plasmonic crystal S₄ with interdigitated ohmic contacts and alternating active/etched cavities.

Gateless periodic plasmonic crystal S₆ with interdigitated ohmic contacts and alternating active/etched cavities.

Materials

Why these are connected

Effect of current on terahertz plasmons in AlGaN/GaN heterostructures

Samples

Large-area grating-gate plasmonic crystal S₇ fabricated from a commercial AlGaN/GaN heterostructure with source, drain, and gate terminals.

Gateless periodic plasmonic crystal S₄ with interdigitated ohmic contacts and alternating active/etched cavities.

Gateless periodic plasmonic crystal S₆ with interdigitated ohmic contacts and alternating active/etched cavities.

Materials

Why these are connected

Effect of current on terahertz plasmons in AlGaN/GaN heterostructures

Samples

Large-area grating-gate plasmonic crystal S₇ fabricated from a commercial AlGaN/GaN heterostructure with source, drain, and gate terminals.

Gateless periodic plasmonic crystal S₄ with interdigitated ohmic contacts and alternating active/etched cavities.

Gateless periodic plasmonic crystal S₆ with interdigitated ohmic contacts and alternating active/etched cavities.

Materials

Why these are connected

Effect of current on terahertz plasmons in AlGaN/GaN heterostructures

Samples

Large-area grating-gate plasmonic crystal S₇ fabricated from a commercial AlGaN/GaN heterostructure with source, drain, and gate terminals.

Gateless periodic plasmonic crystal S₄ with interdigitated ohmic contacts and alternating active/etched cavities.

Gateless periodic plasmonic crystal S₆ with interdigitated ohmic contacts and alternating active/etched cavities.

Materials

Why these are connected

Effect of current on terahertz plasmons in AlGaN/GaN heterostructures

Samples

Large-area grating-gate plasmonic crystal S₇ fabricated from a commercial AlGaN/GaN heterostructure with source, drain, and gate terminals.

Gateless periodic plasmonic crystal S₄ with interdigitated ohmic contacts and alternating active/etched cavities.

Gateless periodic plasmonic crystal S₆ with interdigitated ohmic contacts and alternating active/etched cavities.

Materials

Why these are connected

Effect of current on terahertz plasmons in AlGaN/GaN heterostructures

Samples

Large-area grating-gate plasmonic crystal S₇ fabricated from a commercial AlGaN/GaN heterostructure with source, drain, and gate terminals.

Gateless periodic plasmonic crystal S₄ with interdigitated ohmic contacts and alternating active/etched cavities.

Gateless periodic plasmonic crystal S₆ with interdigitated ohmic contacts and alternating active/etched cavities.

Materials

Why these are connected

Effect of current on terahertz plasmons in AlGaN/GaN heterostructures

Samples

Large-area grating-gate plasmonic crystal S₇ fabricated from a commercial AlGaN/GaN heterostructure with source, drain, and gate terminals.

Gateless periodic plasmonic crystal S₄ with interdigitated ohmic contacts and alternating active/etched cavities.

Gateless periodic plasmonic crystal S₆ with interdigitated ohmic contacts and alternating active/etched cavities.

Materials

Why these are connected

Effect of current on terahertz plasmons in AlGaN/GaN heterostructures

Samples

Large-area grating-gate plasmonic crystal S₇ fabricated from a commercial AlGaN/GaN heterostructure with source, drain, and gate terminals.

Gateless periodic plasmonic crystal S₄ with interdigitated ohmic contacts and alternating active/etched cavities.

Gateless periodic plasmonic crystal S₆ with interdigitated ohmic contacts and alternating active/etched cavities.

Materials

Why these are connected

Processing

Characterization

Properties

Processing

Characterization

Properties

Processing

Characterization

Properties

Processing

Characterization

Properties