Research paperExperimental CharacterizationEffect of temperature on 2D terahertz plasmons and electron effective mass in AlGaN/GaNM. Dub, P. Sai, D. Yavorskiy, Y. Ivonyak et al.2025·10.48550/arxiv.2505.07557·arXiv:2505.07557AbstractThe effect of temperature on two-dimensional plasmons in large-area AlGaN/GaN plasmonic crystals was studied experimentally. With the temperature increase the resonant plasmon frequency redshifts due to the strong temperature dependence of the electron effective mass and electron concentration under open to the environment surface of AlGaN. The temperature dependence of electron effective mass is confirmed by the cyclotron resonance measurements.Read more
Commercial AlGaN/GaN heterostructure SL 3665 (SweGaN) used to fabricate plasmonic crystal devices S₇ and L1.No measurements recordedExperimentalAlGaNStudied MaterialGaNStudied MaterialAlNStudied MaterialSiCSubstrate / DielectricExpand
IHPP-grown AlGaN/GaN heterostructure Hx₅₆₁₂ on SiC used to fabricate plasmonic crystal devices S₁ and S2.No measurements recordedExperimentalAlGaNStudied MaterialGaNStudied MaterialAlNStudied MaterialSiCSubstrate / DielectricExpand
IHPP-grown AlGaN/GaN heterostructure Hx₆₃₄₁A on native semi-insulating GaN:Mn substrate used to fabricate plasmonic crystal device S3.No measurements recordedExperimentalAlGaNStudied MaterialGaNStudied MaterialAlNStudied MaterialGaNSubstrate / DielectricExpand
Plasmonic crystal device S₇ fabricated on SL 3665 (SweGaN) heterostructure with grating-gate geometry.5 preparations3 characterizations1 property2 figuresExperimentalAlGaNStudied MaterialGaNStudied MaterialAlNStudied MaterialSiCSubstrate / DielectricExpand
Plasmonic crystal device L₁ with disk array geometry fabricated on SL 3665 (SweGaN) heterostructure.5 preparationsExperimentalAlGaNStudied MaterialGaNStudied MaterialAlNStudied MaterialSiCSubstrate / DielectricExpand
Plasmonic crystal device L₂ with disk array geometry fabricated on Hx₅₆₁₂ (IHPP) heterostructure.5 preparationsExperimentalAlGaNStudied MaterialGaNStudied MaterialAlNStudied MaterialSiCSubstrate / DielectricExpand
Research paperExperimental CharacterizationEffect of temperature on 2D terahertz plasmons and electron effective mass in AlGaN/GaNM. Dub, P. Sai, D. Yavorskiy, Y. Ivonyak et al.2025·10.48550/arxiv.2505.07557·arXiv:2505.07557AbstractThe effect of temperature on two-dimensional plasmons in large-area AlGaN/GaN plasmonic crystals was studied experimentally. With the temperature increase the resonant plasmon frequency redshifts due to the strong temperature dependence of the electron effective mass and electron concentration under open to the environment surface of AlGaN. The temperature dependence of electron effective mass is confirmed by the cyclotron resonance measurements.Read more
Commercial AlGaN/GaN heterostructure SL 3665 (SweGaN) used to fabricate plasmonic crystal devices S₇ and L1.No measurements recordedExperimentalAlGaNStudied MaterialGaNStudied MaterialAlNStudied MaterialSiCSubstrate / DielectricExpand
IHPP-grown AlGaN/GaN heterostructure Hx₅₆₁₂ on SiC used to fabricate plasmonic crystal devices S₁ and S2.No measurements recordedExperimentalAlGaNStudied MaterialGaNStudied MaterialAlNStudied MaterialSiCSubstrate / DielectricExpand
IHPP-grown AlGaN/GaN heterostructure Hx₆₃₄₁A on native semi-insulating GaN:Mn substrate used to fabricate plasmonic crystal device S3.No measurements recordedExperimentalAlGaNStudied MaterialGaNStudied MaterialAlNStudied MaterialGaNSubstrate / DielectricExpand
Plasmonic crystal device S₇ fabricated on SL 3665 (SweGaN) heterostructure with grating-gate geometry.5 preparations3 characterizations1 property2 figuresExperimentalAlGaNStudied MaterialGaNStudied MaterialAlNStudied MaterialSiCSubstrate / DielectricExpand
Plasmonic crystal device L₁ with disk array geometry fabricated on SL 3665 (SweGaN) heterostructure.5 preparationsExperimentalAlGaNStudied MaterialGaNStudied MaterialAlNStudied MaterialSiCSubstrate / DielectricExpand
Plasmonic crystal device L₂ with disk array geometry fabricated on Hx₅₆₁₂ (IHPP) heterostructure.5 preparationsExperimentalAlGaNStudied MaterialGaNStudied MaterialAlNStudied MaterialSiCSubstrate / DielectricExpand
Research paperExperimental CharacterizationEffect of temperature on 2D terahertz plasmons and electron effective mass in AlGaN/GaNM. Dub, P. Sai, D. Yavorskiy, Y. Ivonyak et al.2025·10.48550/arxiv.2505.07557·arXiv:2505.07557AbstractThe effect of temperature on two-dimensional plasmons in large-area AlGaN/GaN plasmonic crystals was studied experimentally. With the temperature increase the resonant plasmon frequency redshifts due to the strong temperature dependence of the electron effective mass and electron concentration under open to the environment surface of AlGaN. The temperature dependence of electron effective mass is confirmed by the cyclotron resonance measurements.Read more
Commercial AlGaN/GaN heterostructure SL 3665 (SweGaN) used to fabricate plasmonic crystal devices S₇ and L1.No measurements recordedExperimentalAlGaNStudied MaterialGaNStudied MaterialAlNStudied MaterialSiCSubstrate / DielectricExpand
IHPP-grown AlGaN/GaN heterostructure Hx₅₆₁₂ on SiC used to fabricate plasmonic crystal devices S₁ and S2.No measurements recordedExperimentalAlGaNStudied MaterialGaNStudied MaterialAlNStudied MaterialSiCSubstrate / DielectricExpand
IHPP-grown AlGaN/GaN heterostructure Hx₆₃₄₁A on native semi-insulating GaN:Mn substrate used to fabricate plasmonic crystal device S3.No measurements recordedExperimentalAlGaNStudied MaterialGaNStudied MaterialAlNStudied MaterialGaNSubstrate / DielectricExpand
Plasmonic crystal device S₇ fabricated on SL 3665 (SweGaN) heterostructure with grating-gate geometry.5 preparations3 characterizations1 property2 figuresExperimentalAlGaNStudied MaterialGaNStudied MaterialAlNStudied MaterialSiCSubstrate / DielectricExpand
Plasmonic crystal device L₁ with disk array geometry fabricated on SL 3665 (SweGaN) heterostructure.5 preparationsExperimentalAlGaNStudied MaterialGaNStudied MaterialAlNStudied MaterialSiCSubstrate / DielectricExpand
Plasmonic crystal device L₂ with disk array geometry fabricated on Hx₅₆₁₂ (IHPP) heterostructure.5 preparationsExperimentalAlGaNStudied MaterialGaNStudied MaterialAlNStudied MaterialSiCSubstrate / DielectricExpand
Research paperExperimental CharacterizationEffect of temperature on 2D terahertz plasmons and electron effective mass in AlGaN/GaNM. Dub, P. Sai, D. Yavorskiy, Y. Ivonyak et al.2025·10.48550/arxiv.2505.07557·arXiv:2505.07557AbstractThe effect of temperature on two-dimensional plasmons in large-area AlGaN/GaN plasmonic crystals was studied experimentally. With the temperature increase the resonant plasmon frequency redshifts due to the strong temperature dependence of the electron effective mass and electron concentration under open to the environment surface of AlGaN. The temperature dependence of electron effective mass is confirmed by the cyclotron resonance measurements.Read more
Commercial AlGaN/GaN heterostructure SL 3665 (SweGaN) used to fabricate plasmonic crystal devices S₇ and L1.No measurements recordedExperimentalAlGaNStudied MaterialGaNStudied MaterialAlNStudied MaterialSiCSubstrate / DielectricExpand
IHPP-grown AlGaN/GaN heterostructure Hx₅₆₁₂ on SiC used to fabricate plasmonic crystal devices S₁ and S2.No measurements recordedExperimentalAlGaNStudied MaterialGaNStudied MaterialAlNStudied MaterialSiCSubstrate / DielectricExpand
IHPP-grown AlGaN/GaN heterostructure Hx₆₃₄₁A on native semi-insulating GaN:Mn substrate used to fabricate plasmonic crystal device S3.No measurements recordedExperimentalAlGaNStudied MaterialGaNStudied MaterialAlNStudied MaterialGaNSubstrate / DielectricExpand
Plasmonic crystal device S₇ fabricated on SL 3665 (SweGaN) heterostructure with grating-gate geometry.5 preparations3 characterizations1 property2 figuresExperimentalAlGaNStudied MaterialGaNStudied MaterialAlNStudied MaterialSiCSubstrate / DielectricExpand
Plasmonic crystal device L₁ with disk array geometry fabricated on SL 3665 (SweGaN) heterostructure.5 preparationsExperimentalAlGaNStudied MaterialGaNStudied MaterialAlNStudied MaterialSiCSubstrate / DielectricExpand
Plasmonic crystal device L₂ with disk array geometry fabricated on Hx₅₆₁₂ (IHPP) heterostructure.5 preparationsExperimentalAlGaNStudied MaterialGaNStudied MaterialAlNStudied MaterialSiCSubstrate / DielectricExpand
