Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation6 characterizations4 properties2 figures
1 preparation7 characterizations10 properties3 figures
1 preparation7 characterizations10 properties3 figures
1 preparation7 characterizations10 properties3 figures
1 preparation3 characterizations2 properties3 figures
1 preparation3 characterizations2 properties3 figures
1 preparation3 characterizations2 properties3 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Xrd Crystallite Size | graphite | 11nm | — | |||
| Xrd Crystallite Size | GO | 11nm | — | |||
| Xrd Crystallite Size | SnO₂ | 80nm | — | |||
| Xrd Crystallite Size | 4:1 SnO₂/GO | 5nm | — | |||
| Xrd Crystallite Size | 32:1 SnO₂/GO | 8nm | — | |||
| Optical Band Gap | SnO₂ | 3.6eV | — | |||
| Optical Band Gap | 4:1 SnO₂/GO | 3eV | — | |||
| Optical Band Gap | 32:1 SnO₂/GO | 3.4eV | — | |||
| Film Thickness | SnO₂ film thickness | 1.8µm | — | |||
| Film Thickness | 4:1 SnO₂/GO film thickness | 3.2µm | — | |||
| Film Thickness | 32:1 SnO₂/GO film thickness | 1.4µm | — | |||
| Film Porosity | SnO₂ film porosity | 93% | — | |||
| Film Porosity | 4:1 SnO₂/GO film porosity | 97% | — | |||
| Film Porosity | 32:1 SnO₂/GO film porosity | 94% | — | |||
| Specific Surface Area | GO | 30m2 g-1 | — | |||
| Specific Surface Area | SnO₂ | 67m2 g-1 | — | |||
| Specific Surface Area | 4:1 SnO₂/GO | 29m2 g-1 | — | |||
| Specific Surface Area | 32:1 SnO₂/GO | 55m2 g-1 | — | |||
| Total Pore Volume | GO | 0.02cm3 g-1 | — | |||
| Total Pore Volume | SnO₂ | 0.21cm3 g-1 | — | |||
| Total Pore Volume | 4:1 SnO₂/GO | 0.07cm3 g-1 | — | |||
| Total Pore Volume | 32:1 SnO₂/GO | 0.133cm3 g-1 | — | |||
| Xps Binding Energy | C 1s | 284.75eV | — | |||
| Xps Binding Energy | C 1s | 286.2eV | — | |||
| Xps Binding Energy | C 1s | 289eV | — | |||
| Xps Binding Energy | O 1s | 530.75eV | — | |||
| Xps Binding Energy | O 1s | 531.4eV | — | |||
| Xps Binding Energy | O 1s | 532.6eV | — |
Related documents with shared materials, methods, properties, or citations.
APPARATUS AND METHOD FOR TREATING GRAPHENE USING PLASMA AND APPLICATION THEREOF
Single-molecule Surface-Induced Fluorescence Attenuation Based on Reduced Graphene Oxide
Method of Fabricating Graphene-Based/Algal Biofilm Electrode for Application in a Biophotovoltaic Device
Synthesis and Structural Analysis of Multilayered Graphene via Microwave Atmospheric Pressure Plasma
KETYL RADICAL INDUCED PHOTOREDUCTION OF GRAPHENE OXIDE; GRAFTING OF METAL NANOPARTICLES ON GRAPHENE BY PHOTOREDUCTION
CONDUCTIVE THIN FILM AND TRANSPARENT ELECTRODE INCLUDING GRAPHENE OXIDE AND CARBON NANOTUBE, AND METHODS OF PRODUCING THE SAME
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DISPLAY METHOD OF MULTI-PRIMARY COLOR GRAPHENE DISPLAY DEVICE
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METHODS FOR TRANSFERRING GRAPHENE FILMS AND SUBSTRATES COMPRISING GRAPHENE FILMS
Direct writing of room temperature polariton condensate lattice by top-down approach
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation6 characterizations4 properties2 figures
1 preparation7 characterizations10 properties3 figures
1 preparation7 characterizations10 properties3 figures
1 preparation7 characterizations10 properties3 figures
1 preparation3 characterizations2 properties3 figures
1 preparation3 characterizations2 properties3 figures
1 preparation3 characterizations2 properties3 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Xrd Crystallite Size | graphite | 11nm | — | |||
| Xrd Crystallite Size | GO | 11nm | — | |||
| Xrd Crystallite Size | SnO₂ | 80nm | — | |||
| Xrd Crystallite Size | 4:1 SnO₂/GO | 5nm | — | |||
| Xrd Crystallite Size | 32:1 SnO₂/GO | 8nm | — | |||
| Optical Band Gap | SnO₂ | 3.6eV | — | |||
| Optical Band Gap | 4:1 SnO₂/GO | 3eV | — | |||
| Optical Band Gap | 32:1 SnO₂/GO | 3.4eV | — | |||
| Film Thickness | SnO₂ film thickness | 1.8µm | — | |||
| Film Thickness | 4:1 SnO₂/GO film thickness | 3.2µm | — | |||
| Film Thickness | 32:1 SnO₂/GO film thickness | 1.4µm | — | |||
| Film Porosity | SnO₂ film porosity | 93% | — | |||
| Film Porosity | 4:1 SnO₂/GO film porosity | 97% | — | |||
| Film Porosity | 32:1 SnO₂/GO film porosity | 94% | — | |||
| Specific Surface Area | GO | 30m2 g-1 | — | |||
| Specific Surface Area | SnO₂ | 67m2 g-1 | — | |||
| Specific Surface Area | 4:1 SnO₂/GO | 29m2 g-1 | — | |||
| Specific Surface Area | 32:1 SnO₂/GO | 55m2 g-1 | — | |||
| Total Pore Volume | GO | 0.02cm3 g-1 | — | |||
| Total Pore Volume | SnO₂ | 0.21cm3 g-1 | — | |||
| Total Pore Volume | 4:1 SnO₂/GO | 0.07cm3 g-1 | — | |||
| Total Pore Volume | 32:1 SnO₂/GO | 0.133cm3 g-1 | — | |||
| Xps Binding Energy | C 1s | 284.75eV | — | |||
| Xps Binding Energy | C 1s | 286.2eV | — | |||
| Xps Binding Energy | C 1s | 289eV | — | |||
| Xps Binding Energy | O 1s | 530.75eV | — | |||
| Xps Binding Energy | O 1s | 531.4eV | — | |||
| Xps Binding Energy | O 1s | 532.6eV | — |
Related documents with shared materials, methods, properties, or citations.
APPARATUS AND METHOD FOR TREATING GRAPHENE USING PLASMA AND APPLICATION THEREOF
Single-molecule Surface-Induced Fluorescence Attenuation Based on Reduced Graphene Oxide
Method of Fabricating Graphene-Based/Algal Biofilm Electrode for Application in a Biophotovoltaic Device
Synthesis and Structural Analysis of Multilayered Graphene via Microwave Atmospheric Pressure Plasma
KETYL RADICAL INDUCED PHOTOREDUCTION OF GRAPHENE OXIDE; GRAFTING OF METAL NANOPARTICLES ON GRAPHENE BY PHOTOREDUCTION
CONDUCTIVE THIN FILM AND TRANSPARENT ELECTRODE INCLUDING GRAPHENE OXIDE AND CARBON NANOTUBE, AND METHODS OF PRODUCING THE SAME
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DISPLAY METHOD OF MULTI-PRIMARY COLOR GRAPHENE DISPLAY DEVICE
Laser Direct Patterning of Reduced-Graphene Oxide Transparent Circuit
METHODS FOR TRANSFERRING GRAPHENE FILMS AND SUBSTRATES COMPRISING GRAPHENE FILMS
Direct writing of room temperature polariton condensate lattice by top-down approach
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation6 characterizations4 properties2 figures
1 preparation7 characterizations10 properties3 figures
1 preparation7 characterizations10 properties3 figures
1 preparation7 characterizations10 properties3 figures
1 preparation3 characterizations2 properties3 figures
1 preparation3 characterizations2 properties3 figures
1 preparation3 characterizations2 properties3 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Xrd Crystallite Size | graphite | 11nm | — | |||
| Xrd Crystallite Size | GO | 11nm | — | |||
| Xrd Crystallite Size | SnO₂ | 80nm | — | |||
| Xrd Crystallite Size | 4:1 SnO₂/GO | 5nm | — | |||
| Xrd Crystallite Size | 32:1 SnO₂/GO | 8nm | — | |||
| Optical Band Gap | SnO₂ | 3.6eV | — | |||
| Optical Band Gap | 4:1 SnO₂/GO | 3eV | — | |||
| Optical Band Gap | 32:1 SnO₂/GO | 3.4eV | — | |||
| Film Thickness | SnO₂ film thickness | 1.8µm | — | |||
| Film Thickness | 4:1 SnO₂/GO film thickness | 3.2µm | — | |||
| Film Thickness | 32:1 SnO₂/GO film thickness | 1.4µm | — | |||
| Film Porosity | SnO₂ film porosity | 93% | — | |||
| Film Porosity | 4:1 SnO₂/GO film porosity | 97% | — | |||
| Film Porosity | 32:1 SnO₂/GO film porosity | 94% | — | |||
| Specific Surface Area | GO | 30m2 g-1 | — | |||
| Specific Surface Area | SnO₂ | 67m2 g-1 | — | |||
| Specific Surface Area | 4:1 SnO₂/GO | 29m2 g-1 | — | |||
| Specific Surface Area | 32:1 SnO₂/GO | 55m2 g-1 | — | |||
| Total Pore Volume | GO | 0.02cm3 g-1 | — | |||
| Total Pore Volume | SnO₂ | 0.21cm3 g-1 | — | |||
| Total Pore Volume | 4:1 SnO₂/GO | 0.07cm3 g-1 | — | |||
| Total Pore Volume | 32:1 SnO₂/GO | 0.133cm3 g-1 | — | |||
| Xps Binding Energy | C 1s | 284.75eV | — | |||
| Xps Binding Energy | C 1s | 286.2eV | — | |||
| Xps Binding Energy | C 1s | 289eV | — | |||
| Xps Binding Energy | O 1s | 530.75eV | — | |||
| Xps Binding Energy | O 1s | 531.4eV | — | |||
| Xps Binding Energy | O 1s | 532.6eV | — |
Related documents with shared materials, methods, properties, or citations.
APPARATUS AND METHOD FOR TREATING GRAPHENE USING PLASMA AND APPLICATION THEREOF
Single-molecule Surface-Induced Fluorescence Attenuation Based on Reduced Graphene Oxide
Method of Fabricating Graphene-Based/Algal Biofilm Electrode for Application in a Biophotovoltaic Device
Synthesis and Structural Analysis of Multilayered Graphene via Microwave Atmospheric Pressure Plasma
KETYL RADICAL INDUCED PHOTOREDUCTION OF GRAPHENE OXIDE; GRAFTING OF METAL NANOPARTICLES ON GRAPHENE BY PHOTOREDUCTION
CONDUCTIVE THIN FILM AND TRANSPARENT ELECTRODE INCLUDING GRAPHENE OXIDE AND CARBON NANOTUBE, AND METHODS OF PRODUCING THE SAME
Nonlinear optical response and spontaneous polarization in layer-stacked gallenene using second harmonic generation
DISPLAY METHOD OF MULTI-PRIMARY COLOR GRAPHENE DISPLAY DEVICE
Laser Direct Patterning of Reduced-Graphene Oxide Transparent Circuit
METHODS FOR TRANSFERRING GRAPHENE FILMS AND SUBSTRATES COMPRISING GRAPHENE FILMS
Direct writing of room temperature polariton condensate lattice by top-down approach
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation6 characterizations4 properties2 figures
1 preparation7 characterizations10 properties3 figures
1 preparation7 characterizations10 properties3 figures
1 preparation7 characterizations10 properties3 figures
1 preparation3 characterizations2 properties3 figures
1 preparation3 characterizations2 properties3 figures
1 preparation3 characterizations2 properties3 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Xrd Crystallite Size | graphite | 11nm | — | |||
| Xrd Crystallite Size | GO | 11nm | — | |||
| Xrd Crystallite Size | SnO₂ | 80nm | — | |||
| Xrd Crystallite Size | 4:1 SnO₂/GO | 5nm | — | |||
| Xrd Crystallite Size | 32:1 SnO₂/GO | 8nm | — | |||
| Optical Band Gap | SnO₂ | 3.6eV | — | |||
| Optical Band Gap | 4:1 SnO₂/GO | 3eV | — | |||
| Optical Band Gap | 32:1 SnO₂/GO | 3.4eV | — | |||
| Film Thickness | SnO₂ film thickness | 1.8µm | — | |||
| Film Thickness | 4:1 SnO₂/GO film thickness | 3.2µm | — | |||
| Film Thickness | 32:1 SnO₂/GO film thickness | 1.4µm | — | |||
| Film Porosity | SnO₂ film porosity | 93% | — | |||
| Film Porosity | 4:1 SnO₂/GO film porosity | 97% | — | |||
| Film Porosity | 32:1 SnO₂/GO film porosity | 94% | — | |||
| Specific Surface Area | GO | 30m2 g-1 | — | |||
| Specific Surface Area | SnO₂ | 67m2 g-1 | — | |||
| Specific Surface Area | 4:1 SnO₂/GO | 29m2 g-1 | — | |||
| Specific Surface Area | 32:1 SnO₂/GO | 55m2 g-1 | — | |||
| Total Pore Volume | GO | 0.02cm3 g-1 | — | |||
| Total Pore Volume | SnO₂ | 0.21cm3 g-1 | — | |||
| Total Pore Volume | 4:1 SnO₂/GO | 0.07cm3 g-1 | — | |||
| Total Pore Volume | 32:1 SnO₂/GO | 0.133cm3 g-1 | — | |||
| Xps Binding Energy | C 1s | 284.75eV | — | |||
| Xps Binding Energy | C 1s | 286.2eV | — | |||
| Xps Binding Energy | C 1s | 289eV | — | |||
| Xps Binding Energy | O 1s | 530.75eV | — | |||
| Xps Binding Energy | O 1s | 531.4eV | — | |||
| Xps Binding Energy | O 1s | 532.6eV | — |
Related documents with shared materials, methods, properties, or citations.
APPARATUS AND METHOD FOR TREATING GRAPHENE USING PLASMA AND APPLICATION THEREOF
Single-molecule Surface-Induced Fluorescence Attenuation Based on Reduced Graphene Oxide
Method of Fabricating Graphene-Based/Algal Biofilm Electrode for Application in a Biophotovoltaic Device
Synthesis and Structural Analysis of Multilayered Graphene via Microwave Atmospheric Pressure Plasma
KETYL RADICAL INDUCED PHOTOREDUCTION OF GRAPHENE OXIDE; GRAFTING OF METAL NANOPARTICLES ON GRAPHENE BY PHOTOREDUCTION
CONDUCTIVE THIN FILM AND TRANSPARENT ELECTRODE INCLUDING GRAPHENE OXIDE AND CARBON NANOTUBE, AND METHODS OF PRODUCING THE SAME
Nonlinear optical response and spontaneous polarization in layer-stacked gallenene using second harmonic generation
DISPLAY METHOD OF MULTI-PRIMARY COLOR GRAPHENE DISPLAY DEVICE
Laser Direct Patterning of Reduced-Graphene Oxide Transparent Circuit
METHODS FOR TRANSFERRING GRAPHENE FILMS AND SUBSTRATES COMPRISING GRAPHENE FILMS
Direct writing of room temperature polariton condensate lattice by top-down approach
