Patent
US 9,099,376Laser Direct Patterning of Reduced-Graphene Oxide Transparent Circuit
Kam-Chuen YUNG, Hai Ming LIEM, Hang Shan CHOY
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,099,376Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross sectional diagram of a reduced-graphene circuit according to an embodiment of the presently claimed invention. The reduced-graphene circuit …
FIG. 2 is a flow chart showing the steps of a method for fabricating a reduced-graphene oxide circuit according to an embodiment of the presently claimed …
FIG. 3 is a schematic diagram showing the steps of a method for fabricating a reduced- graphene oxide micro-circuit according to an embodiment of the presently …
FIG. 4. For silica on the surface of the treated glass substrate being amorphous, it has a randomly arranged bond structure, resulting in open, reactive, or …
FIG. 5B shows the opposite effect of spin speed on the water contact angle of rGO. According to the Wenzel model, the roughness effect of a graphene film amplifies …
FIG. 6 shows the conductivities of a rGO layer as a function of spin speed. It is calculated to be 7.142 x 103 S/m for a spin speed of 700 rpm. The increase in …
FIG. 7 shows the thickness of a rGO layer as a function of spin speed. The thinnest thickness achieved is 12.2 n m at a spin speed of 700 rpm. [0047] …
FIG. 8 is an UV/vis transmission spectra of a rGO layer at three spots (arbitrary location 1 to 3) according to an embodiment of the presently claimed …
FIG. 9 is a Raman spectra of a GO layer before and a fter laser patterning with various energy densities (60 -100 mJ/cm2) according to an embodiment of the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Withdrawn and Previously Presented) A reduced-graphene oxide circuit fabricated by the method of claim 8, comprising: SVG 14297644.05-29-2015.IA₉C₈₄NKPXXIFW3.CLM.1.svg 0.43 2.95 Black and white the graphene oxide layer formed on the hydrophilic layer; and the pattern of reduced graphene oxide formed on the graphene oxide layer. withdrawn
The reduced-graphene oxide circuit of claim 1, wherein the substrate comprises glass or silicon. withdrawn
The reduced-graphene oxide circuit of claim 1, wherein the substrate is transparent. withdrawn
The reduced-graphene oxide circuit of claim 1, wherein the hydrophilic layer is a silanol layer. withdrawn
The reduced-graphene oxide circuit of claim 1, wherein the hydrophilic layer comprises a geminal group, a vicinal and anhydrous group, a vicinal and hydrated group, or a combination thereof. withdrawn
The reduced-graphene oxide circuit of claim 1, wherein the hydrophilic layer is about 0.1 nm in thickness. withdrawn
canceled
A method for fabricating a reduced- graphene oxide circuit, comprising: providing a substrate; forming at least one hydrophilic layer on the substrate; forming at least one graphene oxide layer on the hydrophilic layer; and reducing a portion of the graphene oxide layer into reduced graphene oxide by a laser to form at least one pattern of the reduced graphene oxide on the graphene oxide layer [[.]]; wherein the hydrophilic layer is formed by applying piranha solution to react with a surface of the substrate.
The method of claim 8, wherein the substrate comprise glass or silicon.
The method of claim 8, wherein the hydrophilic layer is formed by a chemical reaction of hydrogen ions with a surface of the substrate.
The method of claim 8, wherein the step of forming the graphene oxide layer further comprises: providing a graphene oxide solution; spin-coating the graphene oxide solution on the hydrophilic layer; and Docket No.: P₇₆₆₅US00 3 drying the graphene oxide solution on the hydrophilic layer.
The method of claim 8, wherein the laser is a nano-second laser, or an excimer laser with a wavelength of about 248 nm.
The method of claim 8, wherein the step of reducing a portion of the graphene oxide layer into reduced graphene oxide is performed under conditions including the laser being an excimer laser with a wavelength of about 248 nm, a pulse duration of 20 ns, a spot size with 0.8 x 0.8 mm 2, a repetition rate of 1Hz, and a defocus distance of -3.5 cm.
canceled
The method of claim [[1 1]] 8, wherein the piranha solution comprises sulphuric acid and hydrogen peroxide solution in a volume ratio of about 2 to 1.
A method for fabricating a reduced-graphene oxide circuit, comprising: providing a substrate; forming at least one hydrophilic layer on the substrate; forming at least one graphene oxide layer on the hydrophilic layer; and reducing a portion of the graphene oxide layer into reduced graphene oxide by a laser to form at least one pattern of the reduced graphene oxide on the graphene oxide layer; wherein the step of forming the graphene oxide layer further comprises: providing a graphene oxide solution; spin-coating the graphene oxide solution on the hydrophilic layer; and drying the graphene oxide solution on the hydrophilic layer; and wherein the graphene oxide solution comprises graphene flake with size of 0.5 to 5 m dissolved in water.
A method for fabricating a reduced-graphene oxide circuit, comprising: providing a substrate; forming at least one hydrophilic layer on the substrate; forming at least one graphene oxide layer on the hydrophilic layer; and reducing a portion of the graphene oxide layer into reduced graphene oxide by a laser to form at least one pattern of the reduced graphene oxide on the graphene oxide layer; wherein the step of reducing a portion of the graphene oxide layer into reduced graphene oxide is performed under conditions including the laser being an excimer laser with a wavelength of about 248 nm, a pulse Docket No.: P₇₆₆₅US00 5 duration of 20 ns, a spot size with 0.8 x 0.8 mm 2, a repetition rate of 1Hz, and a defocus distance of -3.5 cm. Docket No.: P₇₆₆₅U S 00 6
Layer stacks claimed or described, ordered top of device to substrate.
reduced-graphene oxide circuit
Materials described outside the worked examples.
graphene oxide
reduced graphene oxide
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 7 shows the thickness of a rGO layer as a function of spin speed. The thinnest thickness achieved is 12.2 n m at a spin speed of 700 rpm. [0047] …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
electrical conductivity of rGO layer | 7142 S/m | reduced graphene oxide |
optical transmittance of rGO layer at 555 nm | 83 % |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,099,376Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross sectional diagram of a reduced-graphene circuit according to an embodiment of the presently claimed invention. The reduced-graphene circuit …
FIG. 2 is a flow chart showing the steps of a method for fabricating a reduced-graphene oxide circuit according to an embodiment of the presently claimed …
FIG. 3 is a schematic diagram showing the steps of a method for fabricating a reduced- graphene oxide micro-circuit according to an embodiment of the presently …
FIG. 4. For silica on the surface of the treated glass substrate being amorphous, it has a randomly arranged bond structure, resulting in open, reactive, or …
FIG. 5B shows the opposite effect of spin speed on the water contact angle of rGO. According to the Wenzel model, the roughness effect of a graphene film amplifies …
FIG. 6 shows the conductivities of a rGO layer as a function of spin speed. It is calculated to be 7.142 x 103 S/m for a spin speed of 700 rpm. The increase in …
FIG. 7 shows the thickness of a rGO layer as a function of spin speed. The thinnest thickness achieved is 12.2 n m at a spin speed of 700 rpm. [0047] …
FIG. 8 is an UV/vis transmission spectra of a rGO layer at three spots (arbitrary location 1 to 3) according to an embodiment of the presently claimed …
FIG. 9 is a Raman spectra of a GO layer before and a fter laser patterning with various energy densities (60 -100 mJ/cm2) according to an embodiment of the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Withdrawn and Previously Presented) A reduced-graphene oxide circuit fabricated by the method of claim 8, comprising: SVG 14297644.05-29-2015.IA₉C₈₄NKPXXIFW3.CLM.1.svg 0.43 2.95 Black and white the graphene oxide layer formed on the hydrophilic layer; and the pattern of reduced graphene oxide formed on the graphene oxide layer. withdrawn
The reduced-graphene oxide circuit of claim 1, wherein the substrate comprises glass or silicon. withdrawn
The reduced-graphene oxide circuit of claim 1, wherein the substrate is transparent. withdrawn
The reduced-graphene oxide circuit of claim 1, wherein the hydrophilic layer is a silanol layer. withdrawn
The reduced-graphene oxide circuit of claim 1, wherein the hydrophilic layer comprises a geminal group, a vicinal and anhydrous group, a vicinal and hydrated group, or a combination thereof. withdrawn
The reduced-graphene oxide circuit of claim 1, wherein the hydrophilic layer is about 0.1 nm in thickness. withdrawn
canceled
A method for fabricating a reduced- graphene oxide circuit, comprising: providing a substrate; forming at least one hydrophilic layer on the substrate; forming at least one graphene oxide layer on the hydrophilic layer; and reducing a portion of the graphene oxide layer into reduced graphene oxide by a laser to form at least one pattern of the reduced graphene oxide on the graphene oxide layer [[.]]; wherein the hydrophilic layer is formed by applying piranha solution to react with a surface of the substrate.
The method of claim 8, wherein the substrate comprise glass or silicon.
The method of claim 8, wherein the hydrophilic layer is formed by a chemical reaction of hydrogen ions with a surface of the substrate.
The method of claim 8, wherein the step of forming the graphene oxide layer further comprises: providing a graphene oxide solution; spin-coating the graphene oxide solution on the hydrophilic layer; and Docket No.: P₇₆₆₅US00 3 drying the graphene oxide solution on the hydrophilic layer.
The method of claim 8, wherein the laser is a nano-second laser, or an excimer laser with a wavelength of about 248 nm.
The method of claim 8, wherein the step of reducing a portion of the graphene oxide layer into reduced graphene oxide is performed under conditions including the laser being an excimer laser with a wavelength of about 248 nm, a pulse duration of 20 ns, a spot size with 0.8 x 0.8 mm 2, a repetition rate of 1Hz, and a defocus distance of -3.5 cm.
canceled
The method of claim [[1 1]] 8, wherein the piranha solution comprises sulphuric acid and hydrogen peroxide solution in a volume ratio of about 2 to 1.
A method for fabricating a reduced-graphene oxide circuit, comprising: providing a substrate; forming at least one hydrophilic layer on the substrate; forming at least one graphene oxide layer on the hydrophilic layer; and reducing a portion of the graphene oxide layer into reduced graphene oxide by a laser to form at least one pattern of the reduced graphene oxide on the graphene oxide layer; wherein the step of forming the graphene oxide layer further comprises: providing a graphene oxide solution; spin-coating the graphene oxide solution on the hydrophilic layer; and drying the graphene oxide solution on the hydrophilic layer; and wherein the graphene oxide solution comprises graphene flake with size of 0.5 to 5 m dissolved in water.
A method for fabricating a reduced-graphene oxide circuit, comprising: providing a substrate; forming at least one hydrophilic layer on the substrate; forming at least one graphene oxide layer on the hydrophilic layer; and reducing a portion of the graphene oxide layer into reduced graphene oxide by a laser to form at least one pattern of the reduced graphene oxide on the graphene oxide layer; wherein the step of reducing a portion of the graphene oxide layer into reduced graphene oxide is performed under conditions including the laser being an excimer laser with a wavelength of about 248 nm, a pulse Docket No.: P₇₆₆₅US00 5 duration of 20 ns, a spot size with 0.8 x 0.8 mm 2, a repetition rate of 1Hz, and a defocus distance of -3.5 cm. Docket No.: P₇₆₆₅U S 00 6
Layer stacks claimed or described, ordered top of device to substrate.
reduced-graphene oxide circuit
Materials described outside the worked examples.
graphene oxide
reduced graphene oxide
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 7 shows the thickness of a rGO layer as a function of spin speed. The thinnest thickness achieved is 12.2 n m at a spin speed of 700 rpm. [0047] …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
electrical conductivity of rGO layer | 7142 S/m | reduced graphene oxide |
optical transmittance of rGO layer at 555 nm | 83 % |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,099,376Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross sectional diagram of a reduced-graphene circuit according to an embodiment of the presently claimed invention. The reduced-graphene circuit …
FIG. 2 is a flow chart showing the steps of a method for fabricating a reduced-graphene oxide circuit according to an embodiment of the presently claimed …
FIG. 3 is a schematic diagram showing the steps of a method for fabricating a reduced- graphene oxide micro-circuit according to an embodiment of the presently …
FIG. 4. For silica on the surface of the treated glass substrate being amorphous, it has a randomly arranged bond structure, resulting in open, reactive, or …
FIG. 5B shows the opposite effect of spin speed on the water contact angle of rGO. According to the Wenzel model, the roughness effect of a graphene film amplifies …
FIG. 6 shows the conductivities of a rGO layer as a function of spin speed. It is calculated to be 7.142 x 103 S/m for a spin speed of 700 rpm. The increase in …
FIG. 7 shows the thickness of a rGO layer as a function of spin speed. The thinnest thickness achieved is 12.2 n m at a spin speed of 700 rpm. [0047] …
FIG. 8 is an UV/vis transmission spectra of a rGO layer at three spots (arbitrary location 1 to 3) according to an embodiment of the presently claimed …
FIG. 9 is a Raman spectra of a GO layer before and a fter laser patterning with various energy densities (60 -100 mJ/cm2) according to an embodiment of the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Withdrawn and Previously Presented) A reduced-graphene oxide circuit fabricated by the method of claim 8, comprising: SVG 14297644.05-29-2015.IA₉C₈₄NKPXXIFW3.CLM.1.svg 0.43 2.95 Black and white the graphene oxide layer formed on the hydrophilic layer; and the pattern of reduced graphene oxide formed on the graphene oxide layer. withdrawn
The reduced-graphene oxide circuit of claim 1, wherein the substrate comprises glass or silicon. withdrawn
The reduced-graphene oxide circuit of claim 1, wherein the substrate is transparent. withdrawn
The reduced-graphene oxide circuit of claim 1, wherein the hydrophilic layer is a silanol layer. withdrawn
The reduced-graphene oxide circuit of claim 1, wherein the hydrophilic layer comprises a geminal group, a vicinal and anhydrous group, a vicinal and hydrated group, or a combination thereof. withdrawn
The reduced-graphene oxide circuit of claim 1, wherein the hydrophilic layer is about 0.1 nm in thickness. withdrawn
canceled
A method for fabricating a reduced- graphene oxide circuit, comprising: providing a substrate; forming at least one hydrophilic layer on the substrate; forming at least one graphene oxide layer on the hydrophilic layer; and reducing a portion of the graphene oxide layer into reduced graphene oxide by a laser to form at least one pattern of the reduced graphene oxide on the graphene oxide layer [[.]]; wherein the hydrophilic layer is formed by applying piranha solution to react with a surface of the substrate.
The method of claim 8, wherein the substrate comprise glass or silicon.
The method of claim 8, wherein the hydrophilic layer is formed by a chemical reaction of hydrogen ions with a surface of the substrate.
The method of claim 8, wherein the step of forming the graphene oxide layer further comprises: providing a graphene oxide solution; spin-coating the graphene oxide solution on the hydrophilic layer; and Docket No.: P₇₆₆₅US00 3 drying the graphene oxide solution on the hydrophilic layer.
The method of claim 8, wherein the laser is a nano-second laser, or an excimer laser with a wavelength of about 248 nm.
The method of claim 8, wherein the step of reducing a portion of the graphene oxide layer into reduced graphene oxide is performed under conditions including the laser being an excimer laser with a wavelength of about 248 nm, a pulse duration of 20 ns, a spot size with 0.8 x 0.8 mm 2, a repetition rate of 1Hz, and a defocus distance of -3.5 cm.
canceled
The method of claim [[1 1]] 8, wherein the piranha solution comprises sulphuric acid and hydrogen peroxide solution in a volume ratio of about 2 to 1.
A method for fabricating a reduced-graphene oxide circuit, comprising: providing a substrate; forming at least one hydrophilic layer on the substrate; forming at least one graphene oxide layer on the hydrophilic layer; and reducing a portion of the graphene oxide layer into reduced graphene oxide by a laser to form at least one pattern of the reduced graphene oxide on the graphene oxide layer; wherein the step of forming the graphene oxide layer further comprises: providing a graphene oxide solution; spin-coating the graphene oxide solution on the hydrophilic layer; and drying the graphene oxide solution on the hydrophilic layer; and wherein the graphene oxide solution comprises graphene flake with size of 0.5 to 5 m dissolved in water.
A method for fabricating a reduced-graphene oxide circuit, comprising: providing a substrate; forming at least one hydrophilic layer on the substrate; forming at least one graphene oxide layer on the hydrophilic layer; and reducing a portion of the graphene oxide layer into reduced graphene oxide by a laser to form at least one pattern of the reduced graphene oxide on the graphene oxide layer; wherein the step of reducing a portion of the graphene oxide layer into reduced graphene oxide is performed under conditions including the laser being an excimer laser with a wavelength of about 248 nm, a pulse Docket No.: P₇₆₆₅US00 5 duration of 20 ns, a spot size with 0.8 x 0.8 mm 2, a repetition rate of 1Hz, and a defocus distance of -3.5 cm. Docket No.: P₇₆₆₅U S 00 6
Layer stacks claimed or described, ordered top of device to substrate.
reduced-graphene oxide circuit
Materials described outside the worked examples.
graphene oxide
reduced graphene oxide
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 7 shows the thickness of a rGO layer as a function of spin speed. The thinnest thickness achieved is 12.2 n m at a spin speed of 700 rpm. [0047] …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
electrical conductivity of rGO layer | 7142 S/m | reduced graphene oxide |
optical transmittance of rGO layer at 555 nm | 83 % |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,099,376Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross sectional diagram of a reduced-graphene circuit according to an embodiment of the presently claimed invention. The reduced-graphene circuit …
FIG. 2 is a flow chart showing the steps of a method for fabricating a reduced-graphene oxide circuit according to an embodiment of the presently claimed …
FIG. 3 is a schematic diagram showing the steps of a method for fabricating a reduced- graphene oxide micro-circuit according to an embodiment of the presently …
FIG. 4. For silica on the surface of the treated glass substrate being amorphous, it has a randomly arranged bond structure, resulting in open, reactive, or …
FIG. 5B shows the opposite effect of spin speed on the water contact angle of rGO. According to the Wenzel model, the roughness effect of a graphene film amplifies …
FIG. 6 shows the conductivities of a rGO layer as a function of spin speed. It is calculated to be 7.142 x 103 S/m for a spin speed of 700 rpm. The increase in …
FIG. 7 shows the thickness of a rGO layer as a function of spin speed. The thinnest thickness achieved is 12.2 n m at a spin speed of 700 rpm. [0047] …
FIG. 8 is an UV/vis transmission spectra of a rGO layer at three spots (arbitrary location 1 to 3) according to an embodiment of the presently claimed …
FIG. 9 is a Raman spectra of a GO layer before and a fter laser patterning with various energy densities (60 -100 mJ/cm2) according to an embodiment of the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Withdrawn and Previously Presented) A reduced-graphene oxide circuit fabricated by the method of claim 8, comprising: SVG 14297644.05-29-2015.IA₉C₈₄NKPXXIFW3.CLM.1.svg 0.43 2.95 Black and white the graphene oxide layer formed on the hydrophilic layer; and the pattern of reduced graphene oxide formed on the graphene oxide layer. withdrawn
The reduced-graphene oxide circuit of claim 1, wherein the substrate comprises glass or silicon. withdrawn
The reduced-graphene oxide circuit of claim 1, wherein the substrate is transparent. withdrawn
The reduced-graphene oxide circuit of claim 1, wherein the hydrophilic layer is a silanol layer. withdrawn
The reduced-graphene oxide circuit of claim 1, wherein the hydrophilic layer comprises a geminal group, a vicinal and anhydrous group, a vicinal and hydrated group, or a combination thereof. withdrawn
The reduced-graphene oxide circuit of claim 1, wherein the hydrophilic layer is about 0.1 nm in thickness. withdrawn
canceled
A method for fabricating a reduced- graphene oxide circuit, comprising: providing a substrate; forming at least one hydrophilic layer on the substrate; forming at least one graphene oxide layer on the hydrophilic layer; and reducing a portion of the graphene oxide layer into reduced graphene oxide by a laser to form at least one pattern of the reduced graphene oxide on the graphene oxide layer [[.]]; wherein the hydrophilic layer is formed by applying piranha solution to react with a surface of the substrate.
The method of claim 8, wherein the substrate comprise glass or silicon.
The method of claim 8, wherein the hydrophilic layer is formed by a chemical reaction of hydrogen ions with a surface of the substrate.
The method of claim 8, wherein the step of forming the graphene oxide layer further comprises: providing a graphene oxide solution; spin-coating the graphene oxide solution on the hydrophilic layer; and Docket No.: P₇₆₆₅US00 3 drying the graphene oxide solution on the hydrophilic layer.
The method of claim 8, wherein the laser is a nano-second laser, or an excimer laser with a wavelength of about 248 nm.
The method of claim 8, wherein the step of reducing a portion of the graphene oxide layer into reduced graphene oxide is performed under conditions including the laser being an excimer laser with a wavelength of about 248 nm, a pulse duration of 20 ns, a spot size with 0.8 x 0.8 mm 2, a repetition rate of 1Hz, and a defocus distance of -3.5 cm.
canceled
The method of claim [[1 1]] 8, wherein the piranha solution comprises sulphuric acid and hydrogen peroxide solution in a volume ratio of about 2 to 1.
A method for fabricating a reduced-graphene oxide circuit, comprising: providing a substrate; forming at least one hydrophilic layer on the substrate; forming at least one graphene oxide layer on the hydrophilic layer; and reducing a portion of the graphene oxide layer into reduced graphene oxide by a laser to form at least one pattern of the reduced graphene oxide on the graphene oxide layer; wherein the step of forming the graphene oxide layer further comprises: providing a graphene oxide solution; spin-coating the graphene oxide solution on the hydrophilic layer; and drying the graphene oxide solution on the hydrophilic layer; and wherein the graphene oxide solution comprises graphene flake with size of 0.5 to 5 m dissolved in water.
A method for fabricating a reduced-graphene oxide circuit, comprising: providing a substrate; forming at least one hydrophilic layer on the substrate; forming at least one graphene oxide layer on the hydrophilic layer; and reducing a portion of the graphene oxide layer into reduced graphene oxide by a laser to form at least one pattern of the reduced graphene oxide on the graphene oxide layer; wherein the step of reducing a portion of the graphene oxide layer into reduced graphene oxide is performed under conditions including the laser being an excimer laser with a wavelength of about 248 nm, a pulse Docket No.: P₇₆₆₅US00 5 duration of 20 ns, a spot size with 0.8 x 0.8 mm 2, a repetition rate of 1Hz, and a defocus distance of -3.5 cm. Docket No.: P₇₆₆₅U S 00 6
Layer stacks claimed or described, ordered top of device to substrate.
reduced-graphene oxide circuit
Materials described outside the worked examples.
graphene oxide
reduced graphene oxide
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 7 shows the thickness of a rGO layer as a function of spin speed. The thinnest thickness achieved is 12.2 n m at a spin speed of 700 rpm. [0047] …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
electrical conductivity of rGO layer | 7142 S/m | reduced graphene oxide |
optical transmittance of rGO layer at 555 nm | 83 % |
Related documents with shared materials, methods, properties, or citations.
glass
silicon
Si
silanol layer
hydrophilic layer
piranha solution
sulphuric acid
H₂SO₄
hydrogen peroxide solution
H₂O₂
graphene oxide solution
FIG. 9 is a Raman spectra of a GO layer before and a fter laser patterning with various energy densities (60 -100 mJ/cm2) according to an embodiment of the …
reduced graphene oxide |
transmittance of rGO layer across 450-800 nm range | 80 % | reduced graphene oxide |
Thickness | 450–800 nm | — |
Thickness | ≤ 400 nm | — |
glass
silicon
Si
silanol layer
hydrophilic layer
piranha solution
sulphuric acid
H₂SO₄
hydrogen peroxide solution
H₂O₂
graphene oxide solution
FIG. 9 is a Raman spectra of a GO layer before and a fter laser patterning with various energy densities (60 -100 mJ/cm2) according to an embodiment of the …
reduced graphene oxide |
transmittance of rGO layer across 450-800 nm range | 80 % | reduced graphene oxide |
Thickness | 450–800 nm | — |
Thickness | ≤ 400 nm | — |
glass
silicon
Si
silanol layer
hydrophilic layer
piranha solution
sulphuric acid
H₂SO₄
hydrogen peroxide solution
H₂O₂
graphene oxide solution
FIG. 9 is a Raman spectra of a GO layer before and a fter laser patterning with various energy densities (60 -100 mJ/cm2) according to an embodiment of the …
reduced graphene oxide |
transmittance of rGO layer across 450-800 nm range | 80 % | reduced graphene oxide |
Thickness | 450–800 nm | — |
Thickness | ≤ 400 nm | — |
glass
silicon
Si
silanol layer
hydrophilic layer
piranha solution
sulphuric acid
H₂SO₄
hydrogen peroxide solution
H₂O₂
graphene oxide solution
FIG. 9 is a Raman spectra of a GO layer before and a fter laser patterning with various energy densities (60 -100 mJ/cm2) according to an embodiment of the …
reduced graphene oxide |
transmittance of rGO layer across 450-800 nm range | 80 % | reduced graphene oxide |
Thickness | 450–800 nm | — |
Thickness | ≤ 400 nm | — |