Excitation lifetime extracted from electron-photon (EELS-CL) nanosecond-scale temporal coincidences

Nadezda Varkentina; Yves Auad; Steffi Y. Woo; Florian Castioni; Jean-Denis Blazit; Marcel Tencé; Huan-Cheng Chang; Jeson Chen; Kenji Watanabe; Takashi Taniguchi; Mathieu Kociak; Luiz H. G. Tizei

doi:10.48550/arxiv.2306.15372

Paper details

Research paper

Experimental Characterization

Excitation lifetime extracted from electron-photon (EELS-CL) nanosecond-scale temporal coincidences

Nadezda Varkentina, Yves Auad, Steffi Y. Woo, Florian Castioni et al.

arXiv preprint·2023·10.48550/arxiv.2306.15372·arXiv:2306.15372

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

75-150 nm wide diamond nanoparticle containing many NV₀ centers, supported on an amorphous carbon membrane.

1 preparation1 characterization1 property3 figures

ExperimentalCStudied Material

Thin h-BN flake containing 4.1 eV defects, supported on an amorphous carbon membrane.

1 preparation1 characterization1 property3 figures

Experimentalh-BNStudied Material

Materials

diamond

Studied Material

Also known as

nanodiamonddiamond nanoparticle

Variables

defect_center= NV0

studied material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Excitation lifetime extracted from electron-photon (EELS-CL) nanosecond-scale temporal coincidences | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Condition	Source
Excited State Lifetime	NV₀ lifetime	20-40ns	C	75-150 nm wide diamond nanoparticle containing many NV₀ cent		—
Excited State Lifetime	4.1 eV defect lifetime	<2ns	h-BN	Thin h-BN flake containing 4.1 eV defects, supported on an a		—
Instrument Response Time	IRF	2ns	C	—		—
Optical Band Gap	band gap	5.5eV	—	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Excited State Lifetime	NV₀ lifetime	20-40ns	C	75-150 nm wide diamond nanoparticle containing many NV₀ cent		—
Excited State Lifetime	4.1 eV defect lifetime	<2ns	h-BN	Thin h-BN flake containing 4.1 eV defects, supported on an a		—
Instrument Response Time	IRF	2ns	C	—		—
Optical Band Gap	band gap	5.5eV	—	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Excited State Lifetime	NV₀ lifetime	20-40ns	C	75-150 nm wide diamond nanoparticle containing many NV₀ cent		—
Excited State Lifetime	4.1 eV defect lifetime	<2ns	h-BN	Thin h-BN flake containing 4.1 eV defects, supported on an a		—
Instrument Response Time	IRF	2ns	C	—		—
Optical Band Gap	band gap	5.5eV	—	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Excited State Lifetime	NV₀ lifetime	20-40ns	C	75-150 nm wide diamond nanoparticle containing many NV₀ cent		—
Excited State Lifetime	4.1 eV defect lifetime	<2ns	h-BN	Thin h-BN flake containing 4.1 eV defects, supported on an a		—
Instrument Response Time	IRF	2ns	C	—		—
Optical Band Gap	band gap	5.5eV	—	—	—	—

Excitation lifetime extracted from electron-photon (EELS-CL) nanosecond-scale temporal coincidences

Samples

75-150 nm wide diamond nanoparticle containing many NV₀ centers, supported on an amorphous carbon membrane.

Thin h-BN flake containing 4.1 eV defects, supported on an amorphous carbon membrane.

Materials

Why these are connected

Excitation lifetime extracted from electron-photon (EELS-CL) nanosecond-scale temporal coincidences

Samples

75-150 nm wide diamond nanoparticle containing many NV₀ centers, supported on an amorphous carbon membrane.

Thin h-BN flake containing 4.1 eV defects, supported on an amorphous carbon membrane.

Materials

Why these are connected

Excitation lifetime extracted from electron-photon (EELS-CL) nanosecond-scale temporal coincidences

Samples

75-150 nm wide diamond nanoparticle containing many NV₀ centers, supported on an amorphous carbon membrane.

Thin h-BN flake containing 4.1 eV defects, supported on an amorphous carbon membrane.

Materials

Why these are connected

Excitation lifetime extracted from electron-photon (EELS-CL) nanosecond-scale temporal coincidences

Samples

75-150 nm wide diamond nanoparticle containing many NV₀ centers, supported on an amorphous carbon membrane.

Thin h-BN flake containing 4.1 eV defects, supported on an amorphous carbon membrane.

Materials

Why these are connected

Excitation lifetime extracted from electron-photon (EELS-CL) nanosecond-scale temporal coincidences

Samples

75-150 nm wide diamond nanoparticle containing many NV₀ centers, supported on an amorphous carbon membrane.

Thin h-BN flake containing 4.1 eV defects, supported on an amorphous carbon membrane.

Materials

Why these are connected

Excitation lifetime extracted from electron-photon (EELS-CL) nanosecond-scale temporal coincidences

Samples

75-150 nm wide diamond nanoparticle containing many NV₀ centers, supported on an amorphous carbon membrane.

Thin h-BN flake containing 4.1 eV defects, supported on an amorphous carbon membrane.

Materials

Why these are connected

Excitation lifetime extracted from electron-photon (EELS-CL) nanosecond-scale temporal coincidences

Samples

75-150 nm wide diamond nanoparticle containing many NV₀ centers, supported on an amorphous carbon membrane.

Thin h-BN flake containing 4.1 eV defects, supported on an amorphous carbon membrane.

Materials

Why these are connected

Excitation lifetime extracted from electron-photon (EELS-CL) nanosecond-scale temporal coincidences

Samples

75-150 nm wide diamond nanoparticle containing many NV₀ centers, supported on an amorphous carbon membrane.

Thin h-BN flake containing 4.1 eV defects, supported on an amorphous carbon membrane.

Materials

Why these are connected

Processing

Characterization

Properties

Processing

Characterization

Properties

Processing

Characterization

Properties

Processing

Characterization

Properties