Exploring 2D Materials by High Pressure Synthesis: hBN, Mg-hBN, b-P, b-AsP, and GeAs

N.D. Zhigadlo

doi:10.1016/j.jcrysgro.2024.127627

Paper

Atlas literature

Research paper

Experimental GrowthExperimental Characterization

Exploring 2D Materials by High Pressure Synthesis: hBN, Mg-hBN, b-P, b-AsP, and GeAs

N.D. Zhigadlo

Journal of Crystal Growth·2024·10.1016/j.jcrysgro.2024.127627·arXiv:2402.10019

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Bulk single crystals of hexagonal boron nitride grown under HPHT conditions.

1 preparation4 characterizations1 property1 figure

ExperimentalhBNStudied Material

Bulk single crystals of magnesium-doped hexagonal boron nitride grown under HPHT conditions.

1 preparation4 characterizations1 property1 figure

ExperimentalMg-hBNStudied Material

Bulk single crystals of black phosphorus grown by converting the elements into melt and crystallizing under HPHT conditions.

1 preparation4 characterizations1 figure

ExperimentalPStudied Material

Bulk single crystals of arsenic-doped black phosphorus grown by converting the elements into melt and crystallizing under HPHT conditions.

1 preparation4 characterizations1 figure

ExperimentalAsPStudied Material

Bulk single crystals of GeAs grown from the melt at 1 GPa.

1 preparation4 characterizations1 figure

ExperimentalGeAsStudied Material

Exploring 2D Materials by High Pressure Synthesis: hBN, Mg-hBN, b-P, b-AsP, and GeAs | Matter42 Literature

Exploring 2D Materials by High Pressure Synthesis: hBN, Mg-hBN, b-P, b-AsP, and GeAs

Samples

Bulk single crystals of hexagonal boron nitride grown under HPHT conditions.

Bulk single crystals of magnesium-doped hexagonal boron nitride grown under HPHT conditions.

Bulk single crystals of black phosphorus grown by converting the elements into melt and crystallizing under HPHT conditions.

Bulk single crystals of arsenic-doped black phosphorus grown by converting the elements into melt and crystallizing under HPHT conditions.

Bulk single crystals of GeAs grown from the melt at 1 GPa.

Exploring 2D Materials by High Pressure Synthesis: hBN, Mg-hBN, b-P, b-AsP, and GeAs

Samples

Bulk single crystals of hexagonal boron nitride grown under HPHT conditions.

Bulk single crystals of magnesium-doped hexagonal boron nitride grown under HPHT conditions.

Bulk single crystals of black phosphorus grown by converting the elements into melt and crystallizing under HPHT conditions.

Bulk single crystals of arsenic-doped black phosphorus grown by converting the elements into melt and crystallizing under HPHT conditions.

Bulk single crystals of GeAs grown from the melt at 1 GPa.

Exploring 2D Materials by High Pressure Synthesis: hBN, Mg-hBN, b-P, b-AsP, and GeAs

Samples

Bulk single crystals of hexagonal boron nitride grown under HPHT conditions.

Bulk single crystals of magnesium-doped hexagonal boron nitride grown under HPHT conditions.

Bulk single crystals of black phosphorus grown by converting the elements into melt and crystallizing under HPHT conditions.

Bulk single crystals of arsenic-doped black phosphorus grown by converting the elements into melt and crystallizing under HPHT conditions.

Bulk single crystals of GeAs grown from the melt at 1 GPa.

Exploring 2D Materials by High Pressure Synthesis: hBN, Mg-hBN, b-P, b-AsP, and GeAs

Samples

Bulk single crystals of hexagonal boron nitride grown under HPHT conditions.

Bulk single crystals of magnesium-doped hexagonal boron nitride grown under HPHT conditions.

Bulk single crystals of black phosphorus grown by converting the elements into melt and crystallizing under HPHT conditions.

Bulk single crystals of arsenic-doped black phosphorus grown by converting the elements into melt and crystallizing under HPHT conditions.

Bulk single crystals of GeAs grown from the melt at 1 GPa.

Exploring 2D Materials by High Pressure Synthesis: hBN, Mg-hBN, b-P, b-AsP, and GeAs

Samples

Bulk single crystals of hexagonal boron nitride grown under HPHT conditions.

Bulk single crystals of magnesium-doped hexagonal boron nitride grown under HPHT conditions.

Bulk single crystals of black phosphorus grown by converting the elements into melt and crystallizing under HPHT conditions.

Bulk single crystals of arsenic-doped black phosphorus grown by converting the elements into melt and crystallizing under HPHT conditions.

Bulk single crystals of GeAs grown from the melt at 1 GPa.

Exploring 2D Materials by High Pressure Synthesis: hBN, Mg-hBN, b-P, b-AsP, and GeAs

Samples

Bulk single crystals of hexagonal boron nitride grown under HPHT conditions.

Bulk single crystals of magnesium-doped hexagonal boron nitride grown under HPHT conditions.

Bulk single crystals of black phosphorus grown by converting the elements into melt and crystallizing under HPHT conditions.

Bulk single crystals of arsenic-doped black phosphorus grown by converting the elements into melt and crystallizing under HPHT conditions.

Bulk single crystals of GeAs grown from the melt at 1 GPa.

Exploring 2D Materials by High Pressure Synthesis: hBN, Mg-hBN, b-P, b-AsP, and GeAs

Samples

Bulk single crystals of hexagonal boron nitride grown under HPHT conditions.

Bulk single crystals of magnesium-doped hexagonal boron nitride grown under HPHT conditions.

Bulk single crystals of black phosphorus grown by converting the elements into melt and crystallizing under HPHT conditions.

Bulk single crystals of arsenic-doped black phosphorus grown by converting the elements into melt and crystallizing under HPHT conditions.

Bulk single crystals of GeAs grown from the melt at 1 GPa.

Exploring 2D Materials by High Pressure Synthesis: hBN, Mg-hBN, b-P, b-AsP, and GeAs

Samples

Bulk single crystals of hexagonal boron nitride grown under HPHT conditions.

Bulk single crystals of magnesium-doped hexagonal boron nitride grown under HPHT conditions.

Bulk single crystals of black phosphorus grown by converting the elements into melt and crystallizing under HPHT conditions.

Bulk single crystals of arsenic-doped black phosphorus grown by converting the elements into melt and crystallizing under HPHT conditions.

Bulk single crystals of GeAs grown from the melt at 1 GPa.

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