Research paper
TheoreticalEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 property
No measurements recorded
No measurements recorded
No measurements recorded
1 property
1 property
1 property
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | SiO₂ monolayer thickness | 4.33angstrom | — | |||
| Substrate Thickness | SiO₂ layer thickness after deposition | 4.39angstrom | — | |||
| Ir Band Position | IR band | 1080cm⁻¹ | — | — | — | — |
| Ir Band Position | IR band | 1132cm⁻¹ | — | — | — | — |
| Optical Band Gap | band gap | 6.7eV | — | — | — | — |
| Optical Band Gap | band gap | 8.2eV | — | — | — | — |
| Optical Band Gap | band gap | 3.6eV | — | — | — | — |
| Optical Band Gap | band gap | 1.47eV | — | — | — | — |
| Optical Band Gap | band gap | 1.51eV | — | — | — | — |
| Optical Band Gap | band gap | 1.16eV | — | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Environment-dependent tight-binding models from ab initio pseudo-atomic orbital Hamiltonians
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Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 property
No measurements recorded
No measurements recorded
No measurements recorded
1 property
1 property
1 property
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | SiO₂ monolayer thickness | 4.33angstrom | — | |||
| Substrate Thickness | SiO₂ layer thickness after deposition | 4.39angstrom | — | |||
| Ir Band Position | IR band | 1080cm⁻¹ | — | — | — | — |
| Ir Band Position | IR band | 1132cm⁻¹ | — | — | — | — |
| Optical Band Gap | band gap | 6.7eV | — | — | — | — |
| Optical Band Gap | band gap | 8.2eV | — | — | — | — |
| Optical Band Gap | band gap | 3.6eV | — | — | — | — |
| Optical Band Gap | band gap | 1.47eV | — | — | — | — |
| Optical Band Gap | band gap | 1.51eV | — | — | — | — |
| Optical Band Gap | band gap | 1.16eV | — | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Environment-dependent tight-binding models from ab initio pseudo-atomic orbital Hamiltonians
On the Roughness of Two-Dimensional Materials
Band engineering of phosphorene/graphene van der Waals nanoribbons toward high-efficiency thermoelectric devices
Guidelines for band gap opening in graphene superlattices with periodic π-vacancy distribution
Room-Temperature Pauli Spin Blockade and Current Rectification in 15-13-15 Armchair Graphene Nanoribbon Heterostructures
Strain-Induced Boundary States and Phase Transitions in Graphene Flakes
Flat bands in bilayer graphene induced by proximity with polar h-BN superlattices
Environmental Breakdown of Topological Interface States in Armchair Graphene Nanoribbon Heterostructures
Topological junction states in graphene nanoribbons: A route to topological chemistry
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 property
No measurements recorded
No measurements recorded
No measurements recorded
1 property
1 property
1 property
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | SiO₂ monolayer thickness | 4.33angstrom | — | |||
| Substrate Thickness | SiO₂ layer thickness after deposition | 4.39angstrom | — | |||
| Ir Band Position | IR band | 1080cm⁻¹ | — | — | — | — |
| Ir Band Position | IR band | 1132cm⁻¹ | — | — | — | — |
| Optical Band Gap | band gap | 6.7eV | — | — | — | — |
| Optical Band Gap | band gap | 8.2eV | — | — | — | — |
| Optical Band Gap | band gap | 3.6eV | — | — | — | — |
| Optical Band Gap | band gap | 1.47eV | — | — | — | — |
| Optical Band Gap | band gap | 1.51eV | — | — | — | — |
| Optical Band Gap | band gap | 1.16eV | — | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Environment-dependent tight-binding models from ab initio pseudo-atomic orbital Hamiltonians
On the Roughness of Two-Dimensional Materials
Band engineering of phosphorene/graphene van der Waals nanoribbons toward high-efficiency thermoelectric devices
Guidelines for band gap opening in graphene superlattices with periodic π-vacancy distribution
Room-Temperature Pauli Spin Blockade and Current Rectification in 15-13-15 Armchair Graphene Nanoribbon Heterostructures
Strain-Induced Boundary States and Phase Transitions in Graphene Flakes
Flat bands in bilayer graphene induced by proximity with polar h-BN superlattices
Environmental Breakdown of Topological Interface States in Armchair Graphene Nanoribbon Heterostructures
Topological junction states in graphene nanoribbons: A route to topological chemistry
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 property
No measurements recorded
No measurements recorded
No measurements recorded
1 property
1 property
1 property
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | SiO₂ monolayer thickness | 4.33angstrom | — | |||
| Substrate Thickness | SiO₂ layer thickness after deposition | 4.39angstrom | — | |||
| Ir Band Position | IR band | 1080cm⁻¹ | — | — | — | — |
| Ir Band Position | IR band | 1132cm⁻¹ | — | — | — | — |
| Optical Band Gap | band gap | 6.7eV | — | — | — | — |
| Optical Band Gap | band gap | 8.2eV | — | — | — | — |
| Optical Band Gap | band gap | 3.6eV | — | — | — | — |
| Optical Band Gap | band gap | 1.47eV | — | — | — | — |
| Optical Band Gap | band gap | 1.51eV | — | — | — | — |
| Optical Band Gap | band gap | 1.16eV | — | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Environment-dependent tight-binding models from ab initio pseudo-atomic orbital Hamiltonians
On the Roughness of Two-Dimensional Materials
Band engineering of phosphorene/graphene van der Waals nanoribbons toward high-efficiency thermoelectric devices
Guidelines for band gap opening in graphene superlattices with periodic π-vacancy distribution
Room-Temperature Pauli Spin Blockade and Current Rectification in 15-13-15 Armchair Graphene Nanoribbon Heterostructures
Strain-Induced Boundary States and Phase Transitions in Graphene Flakes
Flat bands in bilayer graphene induced by proximity with polar h-BN superlattices
Environmental Breakdown of Topological Interface States in Armchair Graphene Nanoribbon Heterostructures
Topological junction states in graphene nanoribbons: A route to topological chemistry