Abstract

Thin core silicon nitride photonics enables ultra-low loss, CMOS foundry compatible integration that supports wavelengths from the visible to shortwave infrared. Applications that can benefit from the resulting lower cost, improved robustness, and portability include quantum sensing and computing, ultra-low noise microwave generation, optical clocks, optical gyros, coherent fiber communications, and fiber sensing. An important next step is integration of functional circuits and systems on chip with heterogeneous integration of active components such as high-performance photodetection. Yet to date integrated high-performance photodetectors on the thin film silicon nitride platform has remained elusive. In this work, we demonstrate heterogeneous integration of an InGaAs on InP substrate Modified Uni-Traveling Carrier balanced photodetector with a 15-meter-long unbalanced thin core silicon nitride Mach-Zehnder Interferometer with a bandwidth of 0.92 GHz and a responsivity of 0.305 A/W at 1550 nm with a propagation loss as low as 2.5 dB/m at 1600 nm. Using this circuit we demonstrate two functions, a meter-scale differential interferometer laser stabilization circuit achieving a nearly 23 dB noise suppression at 1 kHz offset and an optical frequency discriminator frequency noise measurement with high sensitivity across 6 orders of magnitude from 10 Hz to 10 MHz. These results demonstrate that the high performance of thin core silicon nitride devices can be combined with integrated high-performance photodetection to realize on-chip stabilized lasers and circuits and pave the path towards full systems on chip.

Abstract

Thin core silicon nitride photonics enables ultra-low loss, CMOS foundry compatible integration that supports wavelengths from the visible to shortwave infrared. Applications that can benefit from the resulting lower cost, improved robustness, and portability include quantum sensing and computing, ultra-low noise microwave generation, optical clocks, optical gyros, coherent fiber communications, and fiber sensing. An important next step is integration of functional circuits and systems on chip with heterogeneous integration of active components such as high-performance photodetection. Yet to date integrated high-performance photodetectors on the thin film silicon nitride platform has remained elusive. In this work, we demonstrate heterogeneous integration of an InGaAs on InP substrate Modified Uni-Traveling Carrier balanced photodetector with a 15-meter-long unbalanced thin core silicon nitride Mach-Zehnder Interferometer with a bandwidth of 0.92 GHz and a responsivity of 0.305 A/W at 1550 nm with a propagation loss as low as 2.5 dB/m at 1600 nm. Using this circuit we demonstrate two functions, a meter-scale differential interferometer laser stabilization circuit achieving a nearly 23 dB noise suppression at 1 kHz offset and an optical frequency discriminator frequency noise measurement with high sensitivity across 6 orders of magnitude from 10 Hz to 10 MHz. These results demonstrate that the high performance of thin core silicon nitride devices can be combined with integrated high-performance photodetection to realize on-chip stabilized lasers and circuits and pave the path towards full systems on chip.

Abstract

Thin core silicon nitride photonics enables ultra-low loss, CMOS foundry compatible integration that supports wavelengths from the visible to shortwave infrared. Applications that can benefit from the resulting lower cost, improved robustness, and portability include quantum sensing and computing, ultra-low noise microwave generation, optical clocks, optical gyros, coherent fiber communications, and fiber sensing. An important next step is integration of functional circuits and systems on chip with heterogeneous integration of active components such as high-performance photodetection. Yet to date integrated high-performance photodetectors on the thin film silicon nitride platform has remained elusive. In this work, we demonstrate heterogeneous integration of an InGaAs on InP substrate Modified Uni-Traveling Carrier balanced photodetector with a 15-meter-long unbalanced thin core silicon nitride Mach-Zehnder Interferometer with a bandwidth of 0.92 GHz and a responsivity of 0.305 A/W at 1550 nm with a propagation loss as low as 2.5 dB/m at 1600 nm. Using this circuit we demonstrate two functions, a meter-scale differential interferometer laser stabilization circuit achieving a nearly 23 dB noise suppression at 1 kHz offset and an optical frequency discriminator frequency noise measurement with high sensitivity across 6 orders of magnitude from 10 Hz to 10 MHz. These results demonstrate that the high performance of thin core silicon nitride devices can be combined with integrated high-performance photodetection to realize on-chip stabilized lasers and circuits and pave the path towards full systems on chip.

Abstract

Thin core silicon nitride photonics enables ultra-low loss, CMOS foundry compatible integration that supports wavelengths from the visible to shortwave infrared. Applications that can benefit from the resulting lower cost, improved robustness, and portability include quantum sensing and computing, ultra-low noise microwave generation, optical clocks, optical gyros, coherent fiber communications, and fiber sensing. An important next step is integration of functional circuits and systems on chip with heterogeneous integration of active components such as high-performance photodetection. Yet to date integrated high-performance photodetectors on the thin film silicon nitride platform has remained elusive. In this work, we demonstrate heterogeneous integration of an InGaAs on InP substrate Modified Uni-Traveling Carrier balanced photodetector with a 15-meter-long unbalanced thin core silicon nitride Mach-Zehnder Interferometer with a bandwidth of 0.92 GHz and a responsivity of 0.305 A/W at 1550 nm with a propagation loss as low as 2.5 dB/m at 1600 nm. Using this circuit we demonstrate two functions, a meter-scale differential interferometer laser stabilization circuit achieving a nearly 23 dB noise suppression at 1 kHz offset and an optical frequency discriminator frequency noise measurement with high sensitivity across 6 orders of magnitude from 10 Hz to 10 MHz. These results demonstrate that the high performance of thin core silicon nitride devices can be combined with integrated high-performance photodetection to realize on-chip stabilized lasers and circuits and pave the path towards full systems on chip.