Indistinguishable Single Photons from Nanowire Quantum Dots in the Telecom O-Band

Paper details

Research paper

Experimental GrowthExperimental Characterization

Mohammed K. Alqedra, Chiao-Tzu Huang, Wen-Hao Chang, Sofiane Haffouz et al.

arXiv·2025·10.48550/arXiv.2502.14071·arXiv:2503.12116

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

1 preparation4 characterizations7 properties3 figures

ExperimentalInAsPStudied MaterialInPStudied Material

InAsP quantum dot

InAsP

Studied Material

Also known as

InAs0.68P0.32 quantum dotInAsP/InP nanowire quantum dot

Variables

composition= InAs0.68P0.32

studied material

Related documents with shared materials, methods, properties, or citations.

Indistinguishable Single Photons from Nanowire Quantum Dots in the Telecom O-Band | Matter42 Literature

Type	Label	Value	Material	Sample	Condition	Source
Fet On Off Ratio	g2(0)	0.006	InAsP	Selective-area VLS-grown InAsP/InP nanowire quantum dot on I		—
Fet On Off Ratio	HOM visibility	94.6%	InAsP	Selective-area VLS-grown InAsP/InP nanowire quantum dot on I		—
Fet On Off Ratio	HOM visibility	5.58%	InAsP	Selective-area VLS-grown InAsP/InP nanowire quantum dot on I		—
Fet On Off Ratio	first-lens source efficiency	28%	InAsP	Selective-area VLS-grown InAsP/InP nanowire quantum dot on I		—
Fet On Off Ratio	detected count rate	200kcps	InAsP	Selective-area VLS-grown InAsP/InP nanowire quantum dot on I		—
Fet Threshold Voltage	radiative lifetime	2.35ns	InAsP	Selective-area VLS-grown InAsP/InP nanowire quantum dot on I		—
Fet Threshold Voltage	radiative lifetime from g2 fit	3.11ns	InAsP	Selective-area VLS-grown InAsP/InP nanowire quantum dot on I		—
PL Peak	regex-detected PL peak	793nm	—	—	—	—

Type	Label	Value	Material	Sample	Condition	Source
Fet On Off Ratio	g2(0)	0.006	InAsP	Selective-area VLS-grown InAsP/InP nanowire quantum dot on I		—
Fet On Off Ratio	HOM visibility	94.6%	InAsP	Selective-area VLS-grown InAsP/InP nanowire quantum dot on I		—
Fet On Off Ratio	HOM visibility	5.58%	InAsP	Selective-area VLS-grown InAsP/InP nanowire quantum dot on I		—
Fet On Off Ratio	first-lens source efficiency	28%	InAsP	Selective-area VLS-grown InAsP/InP nanowire quantum dot on I		—
Fet On Off Ratio	detected count rate	200kcps	InAsP	Selective-area VLS-grown InAsP/InP nanowire quantum dot on I		—
Fet Threshold Voltage	radiative lifetime	2.35ns	InAsP	Selective-area VLS-grown InAsP/InP nanowire quantum dot on I		—
Fet Threshold Voltage	radiative lifetime from g2 fit	3.11ns	InAsP	Selective-area VLS-grown InAsP/InP nanowire quantum dot on I		—
PL Peak	regex-detected PL peak	793nm	—	—	—	—

Type	Label	Value	Material	Sample	Condition	Source
Fet On Off Ratio	g2(0)	0.006	InAsP	Selective-area VLS-grown InAsP/InP nanowire quantum dot on I		—
Fet On Off Ratio	HOM visibility	94.6%	InAsP	Selective-area VLS-grown InAsP/InP nanowire quantum dot on I		—
Fet On Off Ratio	HOM visibility	5.58%	InAsP	Selective-area VLS-grown InAsP/InP nanowire quantum dot on I		—
Fet On Off Ratio	first-lens source efficiency	28%	InAsP	Selective-area VLS-grown InAsP/InP nanowire quantum dot on I		—
Fet On Off Ratio	detected count rate	200kcps	InAsP	Selective-area VLS-grown InAsP/InP nanowire quantum dot on I		—
Fet Threshold Voltage	radiative lifetime	2.35ns	InAsP	Selective-area VLS-grown InAsP/InP nanowire quantum dot on I		—
Fet Threshold Voltage	radiative lifetime from g2 fit	3.11ns	InAsP	Selective-area VLS-grown InAsP/InP nanowire quantum dot on I		—
PL Peak	regex-detected PL peak	793nm	—	—	—	—

Type	Label	Value	Material	Sample	Condition	Source
Fet On Off Ratio	g2(0)	0.006	InAsP	Selective-area VLS-grown InAsP/InP nanowire quantum dot on I		—
Fet On Off Ratio	HOM visibility	94.6%	InAsP	Selective-area VLS-grown InAsP/InP nanowire quantum dot on I		—
Fet On Off Ratio	HOM visibility	5.58%	InAsP	Selective-area VLS-grown InAsP/InP nanowire quantum dot on I		—
Fet On Off Ratio	first-lens source efficiency	28%	InAsP	Selective-area VLS-grown InAsP/InP nanowire quantum dot on I		—
Fet On Off Ratio	detected count rate	200kcps	InAsP	Selective-area VLS-grown InAsP/InP nanowire quantum dot on I		—
Fet Threshold Voltage	radiative lifetime	2.35ns	InAsP	Selective-area VLS-grown InAsP/InP nanowire quantum dot on I		—
Fet Threshold Voltage	radiative lifetime from g2 fit	3.11ns	InAsP	Selective-area VLS-grown InAsP/InP nanowire quantum dot on I		—
PL Peak	regex-detected PL peak	793nm	—	—	—	—