Research paperExperimental GrowthExperimental CharacterizationIndistinguishable Single Photons from Nanowire Quantum Dots in the Telecom O-BandMohammed K. Alqedra, Chiao-Tzu Huang, Wen-Hao Chang, Sofiane Haffouz et al.arXiv·2025·10.48550/arXiv.2502.14071·arXiv:2503.12116AbstractWe demonstrate high-purity, indistinguishable single-photon generation in the telecom O-band from an InAsP/InP nanowire quantum dot grown by selective-area vapor-liquid-solid epitaxy on InP. The source shows g2(0)=0.006(3) under above-band excitation, Hong-Ou-Mandel visibility of 94.6% with 100 ps postselection and 5.58% without postselection, and a first-lens source efficiency of about 28%.Read more
Selective-area VLS-grown InAsP/InP nanowire quantum dot on InP substrate with an InAsP quantum dot embedded in an InP core and clad by an InP shell.1 preparation4 characterizations7 properties3 figuresExperimentalInAsPStudied MaterialInPStudied MaterialExpand
Research paperExperimental GrowthExperimental CharacterizationIndistinguishable Single Photons from Nanowire Quantum Dots in the Telecom O-BandMohammed K. Alqedra, Chiao-Tzu Huang, Wen-Hao Chang, Sofiane Haffouz et al.arXiv·2025·10.48550/arXiv.2502.14071·arXiv:2503.12116AbstractWe demonstrate high-purity, indistinguishable single-photon generation in the telecom O-band from an InAsP/InP nanowire quantum dot grown by selective-area vapor-liquid-solid epitaxy on InP. The source shows g2(0)=0.006(3) under above-band excitation, Hong-Ou-Mandel visibility of 94.6% with 100 ps postselection and 5.58% without postselection, and a first-lens source efficiency of about 28%.Read more
Selective-area VLS-grown InAsP/InP nanowire quantum dot on InP substrate with an InAsP quantum dot embedded in an InP core and clad by an InP shell.1 preparation4 characterizations7 properties3 figuresExperimentalInAsPStudied MaterialInPStudied MaterialExpand
Research paperExperimental GrowthExperimental CharacterizationIndistinguishable Single Photons from Nanowire Quantum Dots in the Telecom O-BandMohammed K. Alqedra, Chiao-Tzu Huang, Wen-Hao Chang, Sofiane Haffouz et al.arXiv·2025·10.48550/arXiv.2502.14071·arXiv:2503.12116AbstractWe demonstrate high-purity, indistinguishable single-photon generation in the telecom O-band from an InAsP/InP nanowire quantum dot grown by selective-area vapor-liquid-solid epitaxy on InP. The source shows g2(0)=0.006(3) under above-band excitation, Hong-Ou-Mandel visibility of 94.6% with 100 ps postselection and 5.58% without postselection, and a first-lens source efficiency of about 28%.Read more
Selective-area VLS-grown InAsP/InP nanowire quantum dot on InP substrate with an InAsP quantum dot embedded in an InP core and clad by an InP shell.1 preparation4 characterizations7 properties3 figuresExperimentalInAsPStudied MaterialInPStudied MaterialExpand
Research paperExperimental GrowthExperimental CharacterizationIndistinguishable Single Photons from Nanowire Quantum Dots in the Telecom O-BandMohammed K. Alqedra, Chiao-Tzu Huang, Wen-Hao Chang, Sofiane Haffouz et al.arXiv·2025·10.48550/arXiv.2502.14071·arXiv:2503.12116AbstractWe demonstrate high-purity, indistinguishable single-photon generation in the telecom O-band from an InAsP/InP nanowire quantum dot grown by selective-area vapor-liquid-solid epitaxy on InP. The source shows g2(0)=0.006(3) under above-band excitation, Hong-Ou-Mandel visibility of 94.6% with 100 ps postselection and 5.58% without postselection, and a first-lens source efficiency of about 28%.Read more
Selective-area VLS-grown InAsP/InP nanowire quantum dot on InP substrate with an InAsP quantum dot embedded in an InP core and clad by an InP shell.1 preparation4 characterizations7 properties3 figuresExperimentalInAsPStudied MaterialInPStudied MaterialExpand