Abstract

Two-dimensional (2D) semiconductors are promising channel materials for continued downscaling of complementary metal-oxide-semiconductor (CMOS) logic circuits. However, their full potential continues to be limited by a lack of scalable high-k dielectrics that can achieve atomically smooth interfaces, small equivalent oxide thicknesses (EOT), excellent gate control, and low leakage currents. Here, we report liquid metal printed ultrathin and scalable Ga₂O₃ dielectric for 2D electronics and electro-optical devices. We directly visualize the atomically smooth Ga₂O₃/WS₂ interfaces enabled by the conformal nature of liquid metal printing. We demonstrate atomic layer deposition compatibility with high-k Ga₂O₃/HfO₂ top-gate dielectric stacks on chemical vapour deposition grown monolayer WS2, achieving EOTs of ~1 nm and subthreshold swings down to 84.9 mV/dec. Gate leakage currents are well within requirements for ultra-scaled low-power logic circuits.

Abstract

Two-dimensional (2D) semiconductors are promising channel materials for continued downscaling of complementary metal-oxide-semiconductor (CMOS) logic circuits. However, their full potential continues to be limited by a lack of scalable high-k dielectrics that can achieve atomically smooth interfaces, small equivalent oxide thicknesses (EOT), excellent gate control, and low leakage currents. Here, we report liquid metal printed ultrathin and scalable Ga₂O₃ dielectric for 2D electronics and electro-optical devices. We directly visualize the atomically smooth Ga₂O₃/WS₂ interfaces enabled by the conformal nature of liquid metal printing. We demonstrate atomic layer deposition compatibility with high-k Ga₂O₃/HfO₂ top-gate dielectric stacks on chemical vapour deposition grown monolayer WS2, achieving EOTs of ~1 nm and subthreshold swings down to 84.9 mV/dec. Gate leakage currents are well within requirements for ultra-scaled low-power logic circuits.

Abstract

Two-dimensional (2D) semiconductors are promising channel materials for continued downscaling of complementary metal-oxide-semiconductor (CMOS) logic circuits. However, their full potential continues to be limited by a lack of scalable high-k dielectrics that can achieve atomically smooth interfaces, small equivalent oxide thicknesses (EOT), excellent gate control, and low leakage currents. Here, we report liquid metal printed ultrathin and scalable Ga₂O₃ dielectric for 2D electronics and electro-optical devices. We directly visualize the atomically smooth Ga₂O₃/WS₂ interfaces enabled by the conformal nature of liquid metal printing. We demonstrate atomic layer deposition compatibility with high-k Ga₂O₃/HfO₂ top-gate dielectric stacks on chemical vapour deposition grown monolayer WS2, achieving EOTs of ~1 nm and subthreshold swings down to 84.9 mV/dec. Gate leakage currents are well within requirements for ultra-scaled low-power logic circuits.

Abstract

Two-dimensional (2D) semiconductors are promising channel materials for continued downscaling of complementary metal-oxide-semiconductor (CMOS) logic circuits. However, their full potential continues to be limited by a lack of scalable high-k dielectrics that can achieve atomically smooth interfaces, small equivalent oxide thicknesses (EOT), excellent gate control, and low leakage currents. Here, we report liquid metal printed ultrathin and scalable Ga₂O₃ dielectric for 2D electronics and electro-optical devices. We directly visualize the atomically smooth Ga₂O₃/WS₂ interfaces enabled by the conformal nature of liquid metal printing. We demonstrate atomic layer deposition compatibility with high-k Ga₂O₃/HfO₂ top-gate dielectric stacks on chemical vapour deposition grown monolayer WS2, achieving EOTs of ~1 nm and subthreshold swings down to 84.9 mV/dec. Gate leakage currents are well within requirements for ultra-scaled low-power logic circuits.