Research paper
Experimental GrowthExperimental CharacterizationMid-infrared intraband transitions in InAs colloidal quantum dots
Shraman Kumar Saha, Philippe Guyot-Sionnest
Copyright © 2026 Matter42. All rights reserved.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation4 characterizations2 properties2 figures
1 preparation4 characterizations4 properties2 figures
1 preparation4 characterizations1 property2 figures
1 preparation2 characterizations2 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Absorption Peak | absorption shoulder | ~7200cm⁻¹ | — | |||
| Absorption Peak | 1S | ~7250cm⁻¹ | — | |||
| Absorption Peak | 1P | ~9200cm⁻¹ | — | |||
| Raman Mode Separation | 1Se→1Pe intraband transition estimate | ~2000cm⁻¹ | — | |||
| Xrd Crystallite Size | TEM mean size | ~7.5nm | — | |||
| Xrd Crystallite Size | TEM mean size | ~8.4nm | — | |||
| Xrd Crystallite Size | TEM mean size | ~9.5nm | — | |||
| Fet Mobility | differential mobility peak | 0.0003cm²/Vs | — | |||
| Fet Carrier Concentration | electron filling | 0.5e-/dot | — |
Related documents with shared materials, methods, properties, or citations.
InP-based NANOCLUSTER, AND METHOD OF PREPARING InP-based NANOPARTICLE
FABRICATION METHOD OF InP BASED QUANTUM DOT BY USING AMINOPHOSPHINE TYPE P PRECURSOR AND CORE SIZE-SORTING PROCEDURE
Erbium-Doped Fibre Quantum Memory for Chip-Integrated Quantum-Dot Single Photons at 980 nm
Atomically Thin Yellow Pearl: An Impetus for Thermal Nonlinear Optical Effect Assisted Continuous Wave Random Lasing
Method of Manufacturing Gallium Nitride Quantum Dots
Enhancement of Photoresponse for InGaAs Infrared Photodetectors Using Plasmonic WO3-x/CsyWO3-x Nanocrystals
LOW ETCH PIT DENSITY, LOW SLIP LINE DENSITY, AND LOW STRAIN INDIUM PHOSPHIDE
Discovery of Graphene Sheets and C-Rich Micro-Oval structure in Stingless Bee Hive; Leading to an Emergent Material with Debut of Blue Emission
WATER SOLUBLE OXIDE LIFTOFF LAYERS FOR GAAS PHOTOVOLTAICS
PHOTOELECTRONIC DEVICE USING HYBRID STRUCTURE OF SILICA NANO PARTICLES - GRAPHENE QUANTUM DOTS AND METHOD OF MANUFACTURING THE SAME
Rapid Reduction of Nitrophenols Using Reusable Magnetic h-BN/Ni-NiO Nanocomposites
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation4 characterizations2 properties2 figures
1 preparation4 characterizations4 properties2 figures
1 preparation4 characterizations1 property2 figures
1 preparation2 characterizations2 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Absorption Peak | absorption shoulder | ~7200cm⁻¹ | — | |||
| Absorption Peak | 1S | ~7250cm⁻¹ | — | |||
| Absorption Peak | 1P | ~9200cm⁻¹ | — | |||
| Raman Mode Separation | 1Se→1Pe intraband transition estimate | ~2000cm⁻¹ | — | |||
| Xrd Crystallite Size | TEM mean size | ~7.5nm | — | |||
| Xrd Crystallite Size | TEM mean size | ~8.4nm | — | |||
| Xrd Crystallite Size | TEM mean size | ~9.5nm | — | |||
| Fet Mobility | differential mobility peak | 0.0003cm²/Vs | — | |||
| Fet Carrier Concentration | electron filling | 0.5e-/dot | — |
Related documents with shared materials, methods, properties, or citations.
InP-based NANOCLUSTER, AND METHOD OF PREPARING InP-based NANOPARTICLE
FABRICATION METHOD OF InP BASED QUANTUM DOT BY USING AMINOPHOSPHINE TYPE P PRECURSOR AND CORE SIZE-SORTING PROCEDURE
Erbium-Doped Fibre Quantum Memory for Chip-Integrated Quantum-Dot Single Photons at 980 nm
Atomically Thin Yellow Pearl: An Impetus for Thermal Nonlinear Optical Effect Assisted Continuous Wave Random Lasing
Method of Manufacturing Gallium Nitride Quantum Dots
Enhancement of Photoresponse for InGaAs Infrared Photodetectors Using Plasmonic WO3-x/CsyWO3-x Nanocrystals
LOW ETCH PIT DENSITY, LOW SLIP LINE DENSITY, AND LOW STRAIN INDIUM PHOSPHIDE
Discovery of Graphene Sheets and C-Rich Micro-Oval structure in Stingless Bee Hive; Leading to an Emergent Material with Debut of Blue Emission
WATER SOLUBLE OXIDE LIFTOFF LAYERS FOR GAAS PHOTOVOLTAICS
PHOTOELECTRONIC DEVICE USING HYBRID STRUCTURE OF SILICA NANO PARTICLES - GRAPHENE QUANTUM DOTS AND METHOD OF MANUFACTURING THE SAME
Rapid Reduction of Nitrophenols Using Reusable Magnetic h-BN/Ni-NiO Nanocomposites
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation4 characterizations2 properties2 figures
1 preparation4 characterizations4 properties2 figures
1 preparation4 characterizations1 property2 figures
1 preparation2 characterizations2 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Absorption Peak | absorption shoulder | ~7200cm⁻¹ | — | |||
| Absorption Peak | 1S | ~7250cm⁻¹ | — | |||
| Absorption Peak | 1P | ~9200cm⁻¹ | — | |||
| Raman Mode Separation | 1Se→1Pe intraband transition estimate | ~2000cm⁻¹ | — | |||
| Xrd Crystallite Size | TEM mean size | ~7.5nm | — | |||
| Xrd Crystallite Size | TEM mean size | ~8.4nm | — | |||
| Xrd Crystallite Size | TEM mean size | ~9.5nm | — | |||
| Fet Mobility | differential mobility peak | 0.0003cm²/Vs | — | |||
| Fet Carrier Concentration | electron filling | 0.5e-/dot | — |
Related documents with shared materials, methods, properties, or citations.
InP-based NANOCLUSTER, AND METHOD OF PREPARING InP-based NANOPARTICLE
FABRICATION METHOD OF InP BASED QUANTUM DOT BY USING AMINOPHOSPHINE TYPE P PRECURSOR AND CORE SIZE-SORTING PROCEDURE
Erbium-Doped Fibre Quantum Memory for Chip-Integrated Quantum-Dot Single Photons at 980 nm
Atomically Thin Yellow Pearl: An Impetus for Thermal Nonlinear Optical Effect Assisted Continuous Wave Random Lasing
Method of Manufacturing Gallium Nitride Quantum Dots
Enhancement of Photoresponse for InGaAs Infrared Photodetectors Using Plasmonic WO3-x/CsyWO3-x Nanocrystals
LOW ETCH PIT DENSITY, LOW SLIP LINE DENSITY, AND LOW STRAIN INDIUM PHOSPHIDE
Discovery of Graphene Sheets and C-Rich Micro-Oval structure in Stingless Bee Hive; Leading to an Emergent Material with Debut of Blue Emission
WATER SOLUBLE OXIDE LIFTOFF LAYERS FOR GAAS PHOTOVOLTAICS
PHOTOELECTRONIC DEVICE USING HYBRID STRUCTURE OF SILICA NANO PARTICLES - GRAPHENE QUANTUM DOTS AND METHOD OF MANUFACTURING THE SAME
Rapid Reduction of Nitrophenols Using Reusable Magnetic h-BN/Ni-NiO Nanocomposites
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation4 characterizations2 properties2 figures
1 preparation4 characterizations4 properties2 figures
1 preparation4 characterizations1 property2 figures
1 preparation2 characterizations2 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Absorption Peak | absorption shoulder | ~7200cm⁻¹ | — | |||
| Absorption Peak | 1S | ~7250cm⁻¹ | — | |||
| Absorption Peak | 1P | ~9200cm⁻¹ | — | |||
| Raman Mode Separation | 1Se→1Pe intraband transition estimate | ~2000cm⁻¹ | — | |||
| Xrd Crystallite Size | TEM mean size | ~7.5nm | — | |||
| Xrd Crystallite Size | TEM mean size | ~8.4nm | — | |||
| Xrd Crystallite Size | TEM mean size | ~9.5nm | — | |||
| Fet Mobility | differential mobility peak | 0.0003cm²/Vs | — | |||
| Fet Carrier Concentration | electron filling | 0.5e-/dot | — |
Related documents with shared materials, methods, properties, or citations.
InP-based NANOCLUSTER, AND METHOD OF PREPARING InP-based NANOPARTICLE
FABRICATION METHOD OF InP BASED QUANTUM DOT BY USING AMINOPHOSPHINE TYPE P PRECURSOR AND CORE SIZE-SORTING PROCEDURE
Erbium-Doped Fibre Quantum Memory for Chip-Integrated Quantum-Dot Single Photons at 980 nm
Atomically Thin Yellow Pearl: An Impetus for Thermal Nonlinear Optical Effect Assisted Continuous Wave Random Lasing
Method of Manufacturing Gallium Nitride Quantum Dots
Enhancement of Photoresponse for InGaAs Infrared Photodetectors Using Plasmonic WO3-x/CsyWO3-x Nanocrystals
LOW ETCH PIT DENSITY, LOW SLIP LINE DENSITY, AND LOW STRAIN INDIUM PHOSPHIDE
Discovery of Graphene Sheets and C-Rich Micro-Oval structure in Stingless Bee Hive; Leading to an Emergent Material with Debut of Blue Emission
WATER SOLUBLE OXIDE LIFTOFF LAYERS FOR GAAS PHOTOVOLTAICS
PHOTOELECTRONIC DEVICE USING HYBRID STRUCTURE OF SILICA NANO PARTICLES - GRAPHENE QUANTUM DOTS AND METHOD OF MANUFACTURING THE SAME
Rapid Reduction of Nitrophenols Using Reusable Magnetic h-BN/Ni-NiO Nanocomposites
figure_digitization.json#Figure 01figure_digitization.json#Figure 5figure_digitization.json#Figure S01figure_digitization.json#Figure S02figure_digitization.json#Figure S09figure_digitization.json#Figure 01figure_digitization.json#Figure 5figure_digitization.json#Figure S01figure_digitization.json#Figure S02figure_digitization.json#Figure S09figure_digitization.json#Figure 01figure_digitization.json#Figure 5figure_digitization.json#Figure S01figure_digitization.json#Figure S02figure_digitization.json#Figure S09figure_digitization.json#Figure 01figure_digitization.json#Figure 5figure_digitization.json#Figure S01figure_digitization.json#Figure S02figure_digitization.json#Figure S09