Patent
US 11,512,253FABRICATION METHOD OF InP BASED QUANTUM DOT BY USING AMINOPHOSPHINE TYPE P PRECURSOR AND CORE SIZE-SORTING PROCEDURE
Hee-Sun Yang
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 11,512,253Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram of InP core/multishell QDs according to the present disclosure. The QD according to the present disclosure includes an …
FIG. 2, the method for fabricating InP core/multishell QDs includes synthesizing an InP core (S₁₀), size-sorting (S₂₀) and forming at least two shells (S₃₀). …
FIG. 3 and Table 1 show PL spectrum and emission characteristics changes of InP/ZnSe xSIx/ZnS QDs in the presence or absence of surface purification and …
FIG. 4 shows absorption spectrum as a function of wavelength, and particularly, (b) is an enlarged view of peak in the absorption spectrum. It can be seen that …
FIG. 5 shows absorption spectrum as a function of wavelength, and (b) is an enlarged diagram showing absorption spectrum, in particular, at 500 nm wavelength. …
FIG. 6 is a graph showing the FE-SEM/EDS composition analysis results of cases I, II, III and IV. As a result of FE-SEM/EDS composition analysis, there is …
FIG. 7 showing the XRD structure analysis results of each case, it is observed that as it goes from case I to case IV, XRD peak is shifted from ZnS phase to …
FIG. 8. It can be seen that in the case of 0.5 mmol of Se (case I), the average size is as small as 7.3 nm, while in the case of 1. O mmo l or more of Se (case …
FIG. 9 shows UV absorption spectrum (a) at 450 nm and (b) at peak with shell structure changes according to experimental example of the present disclosure. …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for fabricating quantum dots, comprising: (a) synthesizing I nP cores based on an aminophosphine type phosphorus (P) precursor; (b) size-sorting the I nP cores; and (c) dispersing the size-sorted I nP cores in a solution and forming at least two shells on the I nP cores, wherein the size-sorting comprises precipitating the I nP cores with an addition of a dispersive solvent and a nondispersive solvent to the I nP cores and separating the I nP cores using a centrifugal separator, wherein the I nP cores are separated in a descending order by size by performing iteration with a gradual increase in an amount of the nondispersive solvent, wherein forming the at least two shells comprises forming each shell having a composition of cation-anion combination, the cation being selected from Zn, Mg and their combination and the anion being selected from S, Se and their combination, and the compositions of each shell are different from each other, wherein the at least two shells are a double-shell including an inner shell covering the core quantum dot and an outermost shell covering the inner shell, or a triple-shell including an inner shell covering the core quantum dot, an intermediate shell covering the inner shell and an outermost shell covering the intermediate shell, and wherein the double-shell is Zn x Mgi- x Se y Si- y/ZnzMgi-zS(0<x<1, 0<y$l, 0<z< 1), and the SVG 16668634.07-25-2022.L₆₂SEJ₇OMBLUEM3.CLM.1.svg 0.15 5.97 Black and white y/Zn zMgi-z S/MgS (0<x 1, Oy5l, 0<z< 1). Currently amended
The method for fabricating quantum dots according to claim 1, wherein the size- sorting comprises: mixing the synthesized I nP cores with the dispersive solvent, adding the nondispersive solvent until I nP core precipitate is formed, and separating the precipitated I nP cores using a centrifugal separator; separating subsequent precipitated I nP cores using the centrifugal separator with an addition of the nondispersive solvent to the solution remaining after the separation of the precipitated I nP cores, and performing at least one iteration; and precipitating the remaining I nP cores with an addition of the nondispersive solvent in excess to the solution remaining after the separation of the precipitated I nP cores. Original
The method for fabricating quantum dots according to claim 1, wherein synthesizing the I nP cores comprises: mixing an indium (In) precursor with a solvent to prepare a mixed solution; increasing a temperature of the mixed solution to 100 140°C; adding a phosphorus precursor to the mixed solution of the increased temperature; and increasing the temperature of the mixed solution containing the added phosphorus precursor to 170 ~ 300 ° C to maintain reaction and cooling down to room temperature, wherein the phosphorus precursor is tris(dimethylamino)phosphine [P(DMA) 3] or tris(diethylamino)phosphine [P(DEA) 3]. Original
The method for fabricating quantum dots according to claim 1, wherein forming the at least two shells comprises: forming a ZnSe y Si -v(0<yK₁) inner shell covering the core quantum dot; forming a ZnS outermost shell covering the ZnSe y S₁-y inner shell; and controlling absorbance of blue in a UV absorption spectrum by adjusting a ratio of Se and S in the ZnSe y S₁-y inner shell. Currently amended
The method for fabricating quantum dots according to claim 1, wherein forming the at least two shells comprises: heating a first stock solution for a Zn source, adding a dispersion of the size-sorted cores and further heating; adding a second stock solution for Se and Zn sources and further heating to cause reaction to form a ZnSe inner shell; and adding a third stock solution for a S source to cause reaction, adding a S source and a Zn source to cause reaction and cooling down to room temperature to form a ZnS outermost shell. Original
The method for fabricating quantum dots according to claim 1, wherein forming the at least two shells comprises: heating a first stock solution for a Zn source, adding a dispersion of the size-sorted cores and further heating; adding a fourth stock solution for Se, S and Zn sources and further heating to cause reaction to form a ZnSeS inner shell; and adding a S source and a Zn source to cause reaction and cooling down to room temperature to form a ZnS outermost shell. Original
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
InP/double-shell or triple-shell quantum dot
InP/ZnSeyS₁-y/ZnS quantum dot
Materials described outside the worked examples.
InP core quantum dots
InP
ZnxMg₁-xSeyS₁-y inner shell
ZnxMg₁-xSeyS₁-y
ZnSeyS₁-y inner shell
ZnSeyS₁-y
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 and Table 1 show PL spectrum and emission characteristics changes of InP/ZnSe xSIx/ZnS QDs in the presence or absence of surface purification and …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pl Peak Fwhm | 35–38 nm | InP |
Pl Quantum Yield | 73–84 % |
Table 1
3 and Table 1 show PL spectrum and emission characteristics changes of In
p. 13
Table 2
Additionally, Table 2 shows PL characteristics changes with the changes in the amount of Se and S.
p. 13
Table 3
Table 3 shows PL characteristics for each shell structure, and it c
p. 14
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,512,253Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram of InP core/multishell QDs according to the present disclosure. The QD according to the present disclosure includes an …
FIG. 2, the method for fabricating InP core/multishell QDs includes synthesizing an InP core (S₁₀), size-sorting (S₂₀) and forming at least two shells (S₃₀). …
FIG. 3 and Table 1 show PL spectrum and emission characteristics changes of InP/ZnSe xSIx/ZnS QDs in the presence or absence of surface purification and …
FIG. 4 shows absorption spectrum as a function of wavelength, and particularly, (b) is an enlarged view of peak in the absorption spectrum. It can be seen that …
FIG. 5 shows absorption spectrum as a function of wavelength, and (b) is an enlarged diagram showing absorption spectrum, in particular, at 500 nm wavelength. …
FIG. 6 is a graph showing the FE-SEM/EDS composition analysis results of cases I, II, III and IV. As a result of FE-SEM/EDS composition analysis, there is …
FIG. 7 showing the XRD structure analysis results of each case, it is observed that as it goes from case I to case IV, XRD peak is shifted from ZnS phase to …
FIG. 8. It can be seen that in the case of 0.5 mmol of Se (case I), the average size is as small as 7.3 nm, while in the case of 1. O mmo l or more of Se (case …
FIG. 9 shows UV absorption spectrum (a) at 450 nm and (b) at peak with shell structure changes according to experimental example of the present disclosure. …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for fabricating quantum dots, comprising: (a) synthesizing I nP cores based on an aminophosphine type phosphorus (P) precursor; (b) size-sorting the I nP cores; and (c) dispersing the size-sorted I nP cores in a solution and forming at least two shells on the I nP cores, wherein the size-sorting comprises precipitating the I nP cores with an addition of a dispersive solvent and a nondispersive solvent to the I nP cores and separating the I nP cores using a centrifugal separator, wherein the I nP cores are separated in a descending order by size by performing iteration with a gradual increase in an amount of the nondispersive solvent, wherein forming the at least two shells comprises forming each shell having a composition of cation-anion combination, the cation being selected from Zn, Mg and their combination and the anion being selected from S, Se and their combination, and the compositions of each shell are different from each other, wherein the at least two shells are a double-shell including an inner shell covering the core quantum dot and an outermost shell covering the inner shell, or a triple-shell including an inner shell covering the core quantum dot, an intermediate shell covering the inner shell and an outermost shell covering the intermediate shell, and wherein the double-shell is Zn x Mgi- x Se y Si- y/ZnzMgi-zS(0<x<1, 0<y$l, 0<z< 1), and the SVG 16668634.07-25-2022.L₆₂SEJ₇OMBLUEM3.CLM.1.svg 0.15 5.97 Black and white y/Zn zMgi-z S/MgS (0<x 1, Oy5l, 0<z< 1). Currently amended
The method for fabricating quantum dots according to claim 1, wherein the size- sorting comprises: mixing the synthesized I nP cores with the dispersive solvent, adding the nondispersive solvent until I nP core precipitate is formed, and separating the precipitated I nP cores using a centrifugal separator; separating subsequent precipitated I nP cores using the centrifugal separator with an addition of the nondispersive solvent to the solution remaining after the separation of the precipitated I nP cores, and performing at least one iteration; and precipitating the remaining I nP cores with an addition of the nondispersive solvent in excess to the solution remaining after the separation of the precipitated I nP cores. Original
The method for fabricating quantum dots according to claim 1, wherein synthesizing the I nP cores comprises: mixing an indium (In) precursor with a solvent to prepare a mixed solution; increasing a temperature of the mixed solution to 100 140°C; adding a phosphorus precursor to the mixed solution of the increased temperature; and increasing the temperature of the mixed solution containing the added phosphorus precursor to 170 ~ 300 ° C to maintain reaction and cooling down to room temperature, wherein the phosphorus precursor is tris(dimethylamino)phosphine [P(DMA) 3] or tris(diethylamino)phosphine [P(DEA) 3]. Original
The method for fabricating quantum dots according to claim 1, wherein forming the at least two shells comprises: forming a ZnSe y Si -v(0<yK₁) inner shell covering the core quantum dot; forming a ZnS outermost shell covering the ZnSe y S₁-y inner shell; and controlling absorbance of blue in a UV absorption spectrum by adjusting a ratio of Se and S in the ZnSe y S₁-y inner shell. Currently amended
The method for fabricating quantum dots according to claim 1, wherein forming the at least two shells comprises: heating a first stock solution for a Zn source, adding a dispersion of the size-sorted cores and further heating; adding a second stock solution for Se and Zn sources and further heating to cause reaction to form a ZnSe inner shell; and adding a third stock solution for a S source to cause reaction, adding a S source and a Zn source to cause reaction and cooling down to room temperature to form a ZnS outermost shell. Original
The method for fabricating quantum dots according to claim 1, wherein forming the at least two shells comprises: heating a first stock solution for a Zn source, adding a dispersion of the size-sorted cores and further heating; adding a fourth stock solution for Se, S and Zn sources and further heating to cause reaction to form a ZnSeS inner shell; and adding a S source and a Zn source to cause reaction and cooling down to room temperature to form a ZnS outermost shell. Original
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
InP/double-shell or triple-shell quantum dot
InP/ZnSeyS₁-y/ZnS quantum dot
Materials described outside the worked examples.
InP core quantum dots
InP
ZnxMg₁-xSeyS₁-y inner shell
ZnxMg₁-xSeyS₁-y
ZnSeyS₁-y inner shell
ZnSeyS₁-y
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 and Table 1 show PL spectrum and emission characteristics changes of InP/ZnSe xSIx/ZnS QDs in the presence or absence of surface purification and …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pl Peak Fwhm | 35–38 nm | InP |
Pl Quantum Yield | 73–84 % |
Table 1
3 and Table 1 show PL spectrum and emission characteristics changes of In
p. 13
Table 2
Additionally, Table 2 shows PL characteristics changes with the changes in the amount of Se and S.
p. 13
Table 3
Table 3 shows PL characteristics for each shell structure, and it c
p. 14
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,512,253Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram of InP core/multishell QDs according to the present disclosure. The QD according to the present disclosure includes an …
FIG. 2, the method for fabricating InP core/multishell QDs includes synthesizing an InP core (S₁₀), size-sorting (S₂₀) and forming at least two shells (S₃₀). …
FIG. 3 and Table 1 show PL spectrum and emission characteristics changes of InP/ZnSe xSIx/ZnS QDs in the presence or absence of surface purification and …
FIG. 4 shows absorption spectrum as a function of wavelength, and particularly, (b) is an enlarged view of peak in the absorption spectrum. It can be seen that …
FIG. 5 shows absorption spectrum as a function of wavelength, and (b) is an enlarged diagram showing absorption spectrum, in particular, at 500 nm wavelength. …
FIG. 6 is a graph showing the FE-SEM/EDS composition analysis results of cases I, II, III and IV. As a result of FE-SEM/EDS composition analysis, there is …
FIG. 7 showing the XRD structure analysis results of each case, it is observed that as it goes from case I to case IV, XRD peak is shifted from ZnS phase to …
FIG. 8. It can be seen that in the case of 0.5 mmol of Se (case I), the average size is as small as 7.3 nm, while in the case of 1. O mmo l or more of Se (case …
FIG. 9 shows UV absorption spectrum (a) at 450 nm and (b) at peak with shell structure changes according to experimental example of the present disclosure. …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for fabricating quantum dots, comprising: (a) synthesizing I nP cores based on an aminophosphine type phosphorus (P) precursor; (b) size-sorting the I nP cores; and (c) dispersing the size-sorted I nP cores in a solution and forming at least two shells on the I nP cores, wherein the size-sorting comprises precipitating the I nP cores with an addition of a dispersive solvent and a nondispersive solvent to the I nP cores and separating the I nP cores using a centrifugal separator, wherein the I nP cores are separated in a descending order by size by performing iteration with a gradual increase in an amount of the nondispersive solvent, wherein forming the at least two shells comprises forming each shell having a composition of cation-anion combination, the cation being selected from Zn, Mg and their combination and the anion being selected from S, Se and their combination, and the compositions of each shell are different from each other, wherein the at least two shells are a double-shell including an inner shell covering the core quantum dot and an outermost shell covering the inner shell, or a triple-shell including an inner shell covering the core quantum dot, an intermediate shell covering the inner shell and an outermost shell covering the intermediate shell, and wherein the double-shell is Zn x Mgi- x Se y Si- y/ZnzMgi-zS(0<x<1, 0<y$l, 0<z< 1), and the SVG 16668634.07-25-2022.L₆₂SEJ₇OMBLUEM3.CLM.1.svg 0.15 5.97 Black and white y/Zn zMgi-z S/MgS (0<x 1, Oy5l, 0<z< 1). Currently amended
The method for fabricating quantum dots according to claim 1, wherein the size- sorting comprises: mixing the synthesized I nP cores with the dispersive solvent, adding the nondispersive solvent until I nP core precipitate is formed, and separating the precipitated I nP cores using a centrifugal separator; separating subsequent precipitated I nP cores using the centrifugal separator with an addition of the nondispersive solvent to the solution remaining after the separation of the precipitated I nP cores, and performing at least one iteration; and precipitating the remaining I nP cores with an addition of the nondispersive solvent in excess to the solution remaining after the separation of the precipitated I nP cores. Original
The method for fabricating quantum dots according to claim 1, wherein synthesizing the I nP cores comprises: mixing an indium (In) precursor with a solvent to prepare a mixed solution; increasing a temperature of the mixed solution to 100 140°C; adding a phosphorus precursor to the mixed solution of the increased temperature; and increasing the temperature of the mixed solution containing the added phosphorus precursor to 170 ~ 300 ° C to maintain reaction and cooling down to room temperature, wherein the phosphorus precursor is tris(dimethylamino)phosphine [P(DMA) 3] or tris(diethylamino)phosphine [P(DEA) 3]. Original
The method for fabricating quantum dots according to claim 1, wherein forming the at least two shells comprises: forming a ZnSe y Si -v(0<yK₁) inner shell covering the core quantum dot; forming a ZnS outermost shell covering the ZnSe y S₁-y inner shell; and controlling absorbance of blue in a UV absorption spectrum by adjusting a ratio of Se and S in the ZnSe y S₁-y inner shell. Currently amended
The method for fabricating quantum dots according to claim 1, wherein forming the at least two shells comprises: heating a first stock solution for a Zn source, adding a dispersion of the size-sorted cores and further heating; adding a second stock solution for Se and Zn sources and further heating to cause reaction to form a ZnSe inner shell; and adding a third stock solution for a S source to cause reaction, adding a S source and a Zn source to cause reaction and cooling down to room temperature to form a ZnS outermost shell. Original
The method for fabricating quantum dots according to claim 1, wherein forming the at least two shells comprises: heating a first stock solution for a Zn source, adding a dispersion of the size-sorted cores and further heating; adding a fourth stock solution for Se, S and Zn sources and further heating to cause reaction to form a ZnSeS inner shell; and adding a S source and a Zn source to cause reaction and cooling down to room temperature to form a ZnS outermost shell. Original
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
InP/double-shell or triple-shell quantum dot
InP/ZnSeyS₁-y/ZnS quantum dot
Materials described outside the worked examples.
InP core quantum dots
InP
ZnxMg₁-xSeyS₁-y inner shell
ZnxMg₁-xSeyS₁-y
ZnSeyS₁-y inner shell
ZnSeyS₁-y
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 and Table 1 show PL spectrum and emission characteristics changes of InP/ZnSe xSIx/ZnS QDs in the presence or absence of surface purification and …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pl Peak Fwhm | 35–38 nm | InP |
Pl Quantum Yield | 73–84 % |
Table 1
3 and Table 1 show PL spectrum and emission characteristics changes of In
p. 13
Table 2
Additionally, Table 2 shows PL characteristics changes with the changes in the amount of Se and S.
p. 13
Table 3
Table 3 shows PL characteristics for each shell structure, and it c
p. 14
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,512,253Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram of InP core/multishell QDs according to the present disclosure. The QD according to the present disclosure includes an …
FIG. 2, the method for fabricating InP core/multishell QDs includes synthesizing an InP core (S₁₀), size-sorting (S₂₀) and forming at least two shells (S₃₀). …
FIG. 3 and Table 1 show PL spectrum and emission characteristics changes of InP/ZnSe xSIx/ZnS QDs in the presence or absence of surface purification and …
FIG. 4 shows absorption spectrum as a function of wavelength, and particularly, (b) is an enlarged view of peak in the absorption spectrum. It can be seen that …
FIG. 5 shows absorption spectrum as a function of wavelength, and (b) is an enlarged diagram showing absorption spectrum, in particular, at 500 nm wavelength. …
FIG. 6 is a graph showing the FE-SEM/EDS composition analysis results of cases I, II, III and IV. As a result of FE-SEM/EDS composition analysis, there is …
FIG. 7 showing the XRD structure analysis results of each case, it is observed that as it goes from case I to case IV, XRD peak is shifted from ZnS phase to …
FIG. 8. It can be seen that in the case of 0.5 mmol of Se (case I), the average size is as small as 7.3 nm, while in the case of 1. O mmo l or more of Se (case …
FIG. 9 shows UV absorption spectrum (a) at 450 nm and (b) at peak with shell structure changes according to experimental example of the present disclosure. …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for fabricating quantum dots, comprising: (a) synthesizing I nP cores based on an aminophosphine type phosphorus (P) precursor; (b) size-sorting the I nP cores; and (c) dispersing the size-sorted I nP cores in a solution and forming at least two shells on the I nP cores, wherein the size-sorting comprises precipitating the I nP cores with an addition of a dispersive solvent and a nondispersive solvent to the I nP cores and separating the I nP cores using a centrifugal separator, wherein the I nP cores are separated in a descending order by size by performing iteration with a gradual increase in an amount of the nondispersive solvent, wherein forming the at least two shells comprises forming each shell having a composition of cation-anion combination, the cation being selected from Zn, Mg and their combination and the anion being selected from S, Se and their combination, and the compositions of each shell are different from each other, wherein the at least two shells are a double-shell including an inner shell covering the core quantum dot and an outermost shell covering the inner shell, or a triple-shell including an inner shell covering the core quantum dot, an intermediate shell covering the inner shell and an outermost shell covering the intermediate shell, and wherein the double-shell is Zn x Mgi- x Se y Si- y/ZnzMgi-zS(0<x<1, 0<y$l, 0<z< 1), and the SVG 16668634.07-25-2022.L₆₂SEJ₇OMBLUEM3.CLM.1.svg 0.15 5.97 Black and white y/Zn zMgi-z S/MgS (0<x 1, Oy5l, 0<z< 1). Currently amended
The method for fabricating quantum dots according to claim 1, wherein the size- sorting comprises: mixing the synthesized I nP cores with the dispersive solvent, adding the nondispersive solvent until I nP core precipitate is formed, and separating the precipitated I nP cores using a centrifugal separator; separating subsequent precipitated I nP cores using the centrifugal separator with an addition of the nondispersive solvent to the solution remaining after the separation of the precipitated I nP cores, and performing at least one iteration; and precipitating the remaining I nP cores with an addition of the nondispersive solvent in excess to the solution remaining after the separation of the precipitated I nP cores. Original
The method for fabricating quantum dots according to claim 1, wherein synthesizing the I nP cores comprises: mixing an indium (In) precursor with a solvent to prepare a mixed solution; increasing a temperature of the mixed solution to 100 140°C; adding a phosphorus precursor to the mixed solution of the increased temperature; and increasing the temperature of the mixed solution containing the added phosphorus precursor to 170 ~ 300 ° C to maintain reaction and cooling down to room temperature, wherein the phosphorus precursor is tris(dimethylamino)phosphine [P(DMA) 3] or tris(diethylamino)phosphine [P(DEA) 3]. Original
The method for fabricating quantum dots according to claim 1, wherein forming the at least two shells comprises: forming a ZnSe y Si -v(0<yK₁) inner shell covering the core quantum dot; forming a ZnS outermost shell covering the ZnSe y S₁-y inner shell; and controlling absorbance of blue in a UV absorption spectrum by adjusting a ratio of Se and S in the ZnSe y S₁-y inner shell. Currently amended
The method for fabricating quantum dots according to claim 1, wherein forming the at least two shells comprises: heating a first stock solution for a Zn source, adding a dispersion of the size-sorted cores and further heating; adding a second stock solution for Se and Zn sources and further heating to cause reaction to form a ZnSe inner shell; and adding a third stock solution for a S source to cause reaction, adding a S source and a Zn source to cause reaction and cooling down to room temperature to form a ZnS outermost shell. Original
The method for fabricating quantum dots according to claim 1, wherein forming the at least two shells comprises: heating a first stock solution for a Zn source, adding a dispersion of the size-sorted cores and further heating; adding a fourth stock solution for Se, S and Zn sources and further heating to cause reaction to form a ZnSeS inner shell; and adding a S source and a Zn source to cause reaction and cooling down to room temperature to form a ZnS outermost shell. Original
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
InP/double-shell or triple-shell quantum dot
InP/ZnSeyS₁-y/ZnS quantum dot
Materials described outside the worked examples.
InP core quantum dots
InP
ZnxMg₁-xSeyS₁-y inner shell
ZnxMg₁-xSeyS₁-y
ZnSeyS₁-y inner shell
ZnSeyS₁-y
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 and Table 1 show PL spectrum and emission characteristics changes of InP/ZnSe xSIx/ZnS QDs in the presence or absence of surface purification and …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pl Peak Fwhm | 35–38 nm | InP |
Pl Quantum Yield | 73–84 % |
Table 1
3 and Table 1 show PL spectrum and emission characteristics changes of In
p. 13
Table 2
Additionally, Table 2 shows PL characteristics changes with the changes in the amount of Se and S.
p. 13
Table 3
Table 3 shows PL characteristics for each shell structure, and it c
p. 14
Related documents with shared materials, methods, properties, or citations.
InP/ZnSe/ZnS quantum dot
InP/ZnSeS/ZnS quantum dot
ZnS outermost shell
ZnS
ZnzMg₁-zS outermost shell
ZnzMg₁-zS
MgS outermost shell
MgS
tris(dimethylamino)phosphine
P(DMA)3
tris(diethylamino)phosphine
P(DEA)3
ZnSe inner shell
ZnSe
ZnSeS inner shell
ZnSeS
FIG. 4 shows absorption spectrum as a function of wavelength, and particularly, (b) is an enlarged view of peak in the absorption spectrum. It can be seen that …
FIG. 5 shows absorption spectrum as a function of wavelength, and (b) is an enlarged diagram showing absorption spectrum, in particular, at 500 nm wavelength. …
FIG. 5 shows absorption spectrum as a function of wavelength, and (b) is an enlarged diagram showing absorption spectrum, in particular, at 500 nm wavelength. …
FIG. 6 is a graph showing the FE-SEM/EDS composition analysis results of cases I, II, III and IV. As a result of FE-SEM/EDS composition analysis, there is …
FIG. 6 is a graph showing the FE-SEM/EDS composition analysis results of cases I, II, III and IV. As a result of FE-SEM/EDS composition analysis, there is …
FIG. 6 is a graph showing the FE-SEM/EDS composition analysis results of cases I, II, III and IV. As a result of FE-SEM/EDS composition analysis, there is …
FIG. 7 showing the XRD structure analysis results of each case, it is observed that as it goes from case I to case IV, XRD peak is shifted from ZnS phase to …
FIG. 7 showing the XRD structure analysis results of each case, it is observed that as it goes from case I to case IV, XRD peak is shifted from ZnS phase to …
FIG. 8. It can be seen that in the case of 0.5 mmol of Se (case I), the average size is as small as 7.3 nm, while in the case of 1. O mmo l or more of Se (case …
FIG. 9 shows UV absorption spectrum (a) at 450 nm and (b) at peak with shell structure changes according to experimental example of the present disclosure. …
InP/ZnSe/ZnS quantum dot
InP/ZnSeS/ZnS quantum dot
ZnS outermost shell
ZnS
ZnzMg₁-zS outermost shell
ZnzMg₁-zS
MgS outermost shell
MgS
tris(dimethylamino)phosphine
P(DMA)3
tris(diethylamino)phosphine
P(DEA)3
ZnSe inner shell
ZnSe
ZnSeS inner shell
ZnSeS
FIG. 4 shows absorption spectrum as a function of wavelength, and particularly, (b) is an enlarged view of peak in the absorption spectrum. It can be seen that …
FIG. 5 shows absorption spectrum as a function of wavelength, and (b) is an enlarged diagram showing absorption spectrum, in particular, at 500 nm wavelength. …
FIG. 5 shows absorption spectrum as a function of wavelength, and (b) is an enlarged diagram showing absorption spectrum, in particular, at 500 nm wavelength. …
FIG. 6 is a graph showing the FE-SEM/EDS composition analysis results of cases I, II, III and IV. As a result of FE-SEM/EDS composition analysis, there is …
FIG. 6 is a graph showing the FE-SEM/EDS composition analysis results of cases I, II, III and IV. As a result of FE-SEM/EDS composition analysis, there is …
FIG. 6 is a graph showing the FE-SEM/EDS composition analysis results of cases I, II, III and IV. As a result of FE-SEM/EDS composition analysis, there is …
FIG. 7 showing the XRD structure analysis results of each case, it is observed that as it goes from case I to case IV, XRD peak is shifted from ZnS phase to …
FIG. 7 showing the XRD structure analysis results of each case, it is observed that as it goes from case I to case IV, XRD peak is shifted from ZnS phase to …
FIG. 8. It can be seen that in the case of 0.5 mmol of Se (case I), the average size is as small as 7.3 nm, while in the case of 1. O mmo l or more of Se (case …
FIG. 9 shows UV absorption spectrum (a) at 450 nm and (b) at peak with shell structure changes according to experimental example of the present disclosure. …
InP/ZnSe/ZnS quantum dot
InP/ZnSeS/ZnS quantum dot
ZnS outermost shell
ZnS
ZnzMg₁-zS outermost shell
ZnzMg₁-zS
MgS outermost shell
MgS
tris(dimethylamino)phosphine
P(DMA)3
tris(diethylamino)phosphine
P(DEA)3
ZnSe inner shell
ZnSe
ZnSeS inner shell
ZnSeS
FIG. 4 shows absorption spectrum as a function of wavelength, and particularly, (b) is an enlarged view of peak in the absorption spectrum. It can be seen that …
FIG. 5 shows absorption spectrum as a function of wavelength, and (b) is an enlarged diagram showing absorption spectrum, in particular, at 500 nm wavelength. …
FIG. 5 shows absorption spectrum as a function of wavelength, and (b) is an enlarged diagram showing absorption spectrum, in particular, at 500 nm wavelength. …
FIG. 6 is a graph showing the FE-SEM/EDS composition analysis results of cases I, II, III and IV. As a result of FE-SEM/EDS composition analysis, there is …
FIG. 6 is a graph showing the FE-SEM/EDS composition analysis results of cases I, II, III and IV. As a result of FE-SEM/EDS composition analysis, there is …
FIG. 6 is a graph showing the FE-SEM/EDS composition analysis results of cases I, II, III and IV. As a result of FE-SEM/EDS composition analysis, there is …
FIG. 7 showing the XRD structure analysis results of each case, it is observed that as it goes from case I to case IV, XRD peak is shifted from ZnS phase to …
FIG. 7 showing the XRD structure analysis results of each case, it is observed that as it goes from case I to case IV, XRD peak is shifted from ZnS phase to …
FIG. 8. It can be seen that in the case of 0.5 mmol of Se (case I), the average size is as small as 7.3 nm, while in the case of 1. O mmo l or more of Se (case …
FIG. 9 shows UV absorption spectrum (a) at 450 nm and (b) at peak with shell structure changes according to experimental example of the present disclosure. …
InP/ZnSe/ZnS quantum dot
InP/ZnSeS/ZnS quantum dot
ZnS outermost shell
ZnS
ZnzMg₁-zS outermost shell
ZnzMg₁-zS
MgS outermost shell
MgS
tris(dimethylamino)phosphine
P(DMA)3
tris(diethylamino)phosphine
P(DEA)3
ZnSe inner shell
ZnSe
ZnSeS inner shell
ZnSeS
FIG. 4 shows absorption spectrum as a function of wavelength, and particularly, (b) is an enlarged view of peak in the absorption spectrum. It can be seen that …
FIG. 5 shows absorption spectrum as a function of wavelength, and (b) is an enlarged diagram showing absorption spectrum, in particular, at 500 nm wavelength. …
FIG. 5 shows absorption spectrum as a function of wavelength, and (b) is an enlarged diagram showing absorption spectrum, in particular, at 500 nm wavelength. …
FIG. 6 is a graph showing the FE-SEM/EDS composition analysis results of cases I, II, III and IV. As a result of FE-SEM/EDS composition analysis, there is …
FIG. 6 is a graph showing the FE-SEM/EDS composition analysis results of cases I, II, III and IV. As a result of FE-SEM/EDS composition analysis, there is …
FIG. 6 is a graph showing the FE-SEM/EDS composition analysis results of cases I, II, III and IV. As a result of FE-SEM/EDS composition analysis, there is …
FIG. 7 showing the XRD structure analysis results of each case, it is observed that as it goes from case I to case IV, XRD peak is shifted from ZnS phase to …
FIG. 7 showing the XRD structure analysis results of each case, it is observed that as it goes from case I to case IV, XRD peak is shifted from ZnS phase to …
FIG. 8. It can be seen that in the case of 0.5 mmol of Se (case I), the average size is as small as 7.3 nm, while in the case of 1. O mmo l or more of Se (case …
FIG. 9 shows UV absorption spectrum (a) at 450 nm and (b) at peak with shell structure changes according to experimental example of the present disclosure. …