Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
GaAs/AlGaAs quantum dot heterostructure with GaAs quantum dots formed by in-situ etched nanoholes in an Al0.33Ga0.67As layer and embedded in a p-i-n diode structure with doped Al0.15Ga0.85As layers.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
GaAs/AlGaAs quantum dot heterostructure with GaAs quantum dots formed by in-situ etched nanoholes in an Al0.33Ga0.67As layer and embedded in a p-i-n diode structure with doped Al0.15Ga0.85As layers.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
GaAs/AlGaAs quantum dot heterostructure with GaAs quantum dots formed by in-situ etched nanoholes in an Al0.33Ga0.67As layer and embedded in a p-i-n diode structure with doped Al0.15Ga0.85As layers.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
GaAs/AlGaAs quantum dot heterostructure with GaAs quantum dots formed by in-situ etched nanoholes in an Al0.33Ga0.67As layer and embedded in a p-i-n diode structure with doped Al0.15Ga0.85As layers.