Bandgap Engineering On Demand in GaAsN Nanowires by Post-Growth Hydrogen Implantation

Nadine Denis Akant Sharma; Elena Blundo; Francesca Santangeli; Paolo De Vincenzi; Riccardo Pallucchi; Mitsuki Yukimune; Alexander Vogel; Ilaria Zardo; Antonio Polimeni; Fumitaro Ishikawa; Marta De Luca

doi:10.48550/arxiv.2511.02697

Paper details

Research paper

Experimental GrowthExperimental Characterization

Bandgap Engineering On Demand in GaAsN Nanowires by Post-Growth Hydrogen Implantation

Nadine Denis Akant Sharma, Elena Blundo, Francesca Santangeli, Paolo De Vincenzi et al.

arXiv·2025·10.48550/arxiv.2511.02697·arXiv:2511.02697

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Core-shell-shell GaAs/GaAsN/GaAs nanowire with 0.6% N in the GaAsN shell; grown on Si and later hydrogenated.

2 characterizations5 properties4 figures

ExperimentalGaAsStudied MaterialGaAsNStudied Material

Core-shell-shell GaAs/GaAsN/GaAs nanowire with 1.6% N in the GaAsN shell; grown on Si and later hydrogenated.

4 characterizations7 properties4 figures

ExperimentalGaAsStudied MaterialGaAsNStudied Material

Core-shell-shell GaAs/GaAsN/GaAs nanowire with 4.2% N in the GaAsN shell; grown on Si and later hydrogenated.

2 characterizations7 properties4 figures

ExperimentalGaAsStudied MaterialGaAsNStudied Material

Reference GaAs nanowire grown under the same conditions but without nitrogen incorporation.

2 characterizations1 property4 figures

ExperimentalGaAsStudied Material

Materials

GaAs

Studied Material

Also known as

GaAs coreGaAs outer shellGaAs reference nanowire

studied material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Bandgap Engineering On Demand in GaAsN Nanowires by Post-Growth Hydrogen Implantation | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Condition	Source
PL Peak	GaAsN shell emission	1.29eV	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 0.6% N in the		—
PL Peak	GaAsN shell emission	1.18eV	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 1.6% N in the		—
PL Peak	GaAsN shell emission	0.97eV	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 4.2% N in the		—
PL Peak	GaAs bandgap emission	1.43eV	GaAs	Reference GaAs nanowire grown under the same conditions but		—
PL Peak	GaAs-like recovered emission	1.42eV	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 0.6% N in the		—
PL Peak	GaAs-like recovered emission	1.42eV	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 1.6% N in the		—
PL Peak	GaAs-like recovered emission	1.42eV	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 4.2% N in the		—
Pl Peak Fwhm	linewidth narrowing factor	2ratio	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 0.6% N in the		—
Pl Peak Fwhm	linewidth narrowing factor	2ratio	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 1.6% N in the		—
Pl Peak Fwhm	linewidth narrowing factor	2ratio	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 4.2% N in the		—
Pl Peak Intensity	PL efficiency increase	10ratio	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 0.6% N in the		—
Pl Peak Intensity	PL efficiency increase	10ratio	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 1.6% N in the		—
Pl Peak Intensity	PL efficiency increase	10ratio	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 4.2% N in the		—
Pl Peak Intensity	maximum PL intensity increase along nanowire	30ratio	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 1.6% N in the		—
PL Peak	bandgap shift after hydrogenation	0.14eV	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 0.6% N in the		—
PL Peak	bandgap shift after hydrogenation	0.25eV	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 1.6% N in the		—
PL Peak	bandgap shift after hydrogenation	0.5eV	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 4.2% N in the		—
PL Peak	GaAsN low bandgap limit	0.97eV	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 4.2% N in the		—
PL Peak	GaAs-like high bandgap limit	1.43eV	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 4.2% N in the		—
PL Peak	H-activated radiative transition band	1eV	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 1.6% N in the		—
Optical Band Gap	band gap	0.97eV	—	—	—	—
Optical Band Gap	band gap	1.42eV	—	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
PL Peak	GaAsN shell emission	1.29eV	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 0.6% N in the		—
PL Peak	GaAsN shell emission	1.18eV	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 1.6% N in the		—
PL Peak	GaAsN shell emission	0.97eV	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 4.2% N in the		—
PL Peak	GaAs bandgap emission	1.43eV	GaAs	Reference GaAs nanowire grown under the same conditions but		—
PL Peak	GaAs-like recovered emission	1.42eV	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 0.6% N in the		—
PL Peak	GaAs-like recovered emission	1.42eV	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 1.6% N in the		—
PL Peak	GaAs-like recovered emission	1.42eV	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 4.2% N in the		—
Pl Peak Fwhm	linewidth narrowing factor	2ratio	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 0.6% N in the		—
Pl Peak Fwhm	linewidth narrowing factor	2ratio	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 1.6% N in the		—
Pl Peak Fwhm	linewidth narrowing factor	2ratio	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 4.2% N in the		—
Pl Peak Intensity	PL efficiency increase	10ratio	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 0.6% N in the		—
Pl Peak Intensity	PL efficiency increase	10ratio	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 1.6% N in the		—
Pl Peak Intensity	PL efficiency increase	10ratio	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 4.2% N in the		—
Pl Peak Intensity	maximum PL intensity increase along nanowire	30ratio	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 1.6% N in the		—
PL Peak	bandgap shift after hydrogenation	0.14eV	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 0.6% N in the		—
PL Peak	bandgap shift after hydrogenation	0.25eV	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 1.6% N in the		—
PL Peak	bandgap shift after hydrogenation	0.5eV	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 4.2% N in the		—
PL Peak	GaAsN low bandgap limit	0.97eV	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 4.2% N in the		—
PL Peak	GaAs-like high bandgap limit	1.43eV	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 4.2% N in the		—
PL Peak	H-activated radiative transition band	1eV	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 1.6% N in the		—
Optical Band Gap	band gap	0.97eV	—	—	—	—
Optical Band Gap	band gap	1.42eV	—	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
PL Peak	GaAsN shell emission	1.29eV	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 0.6% N in the		—
PL Peak	GaAsN shell emission	1.18eV	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 1.6% N in the		—
PL Peak	GaAsN shell emission	0.97eV	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 4.2% N in the		—
PL Peak	GaAs bandgap emission	1.43eV	GaAs	Reference GaAs nanowire grown under the same conditions but		—
PL Peak	GaAs-like recovered emission	1.42eV	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 0.6% N in the		—
PL Peak	GaAs-like recovered emission	1.42eV	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 1.6% N in the		—
PL Peak	GaAs-like recovered emission	1.42eV	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 4.2% N in the		—
Pl Peak Fwhm	linewidth narrowing factor	2ratio	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 0.6% N in the		—
Pl Peak Fwhm	linewidth narrowing factor	2ratio	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 1.6% N in the		—
Pl Peak Fwhm	linewidth narrowing factor	2ratio	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 4.2% N in the		—
Pl Peak Intensity	PL efficiency increase	10ratio	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 0.6% N in the		—
Pl Peak Intensity	PL efficiency increase	10ratio	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 1.6% N in the		—
Pl Peak Intensity	PL efficiency increase	10ratio	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 4.2% N in the		—
Pl Peak Intensity	maximum PL intensity increase along nanowire	30ratio	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 1.6% N in the		—
PL Peak	bandgap shift after hydrogenation	0.14eV	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 0.6% N in the		—
PL Peak	bandgap shift after hydrogenation	0.25eV	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 1.6% N in the		—
PL Peak	bandgap shift after hydrogenation	0.5eV	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 4.2% N in the		—
PL Peak	GaAsN low bandgap limit	0.97eV	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 4.2% N in the		—
PL Peak	GaAs-like high bandgap limit	1.43eV	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 4.2% N in the		—
PL Peak	H-activated radiative transition band	1eV	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 1.6% N in the		—
Optical Band Gap	band gap	0.97eV	—	—	—	—
Optical Band Gap	band gap	1.42eV	—	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
PL Peak	GaAsN shell emission	1.29eV	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 0.6% N in the		—
PL Peak	GaAsN shell emission	1.18eV	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 1.6% N in the		—
PL Peak	GaAsN shell emission	0.97eV	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 4.2% N in the		—
PL Peak	GaAs bandgap emission	1.43eV	GaAs	Reference GaAs nanowire grown under the same conditions but		—
PL Peak	GaAs-like recovered emission	1.42eV	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 0.6% N in the		—
PL Peak	GaAs-like recovered emission	1.42eV	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 1.6% N in the		—
PL Peak	GaAs-like recovered emission	1.42eV	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 4.2% N in the		—
Pl Peak Fwhm	linewidth narrowing factor	2ratio	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 0.6% N in the		—
Pl Peak Fwhm	linewidth narrowing factor	2ratio	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 1.6% N in the		—
Pl Peak Fwhm	linewidth narrowing factor	2ratio	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 4.2% N in the		—
Pl Peak Intensity	PL efficiency increase	10ratio	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 0.6% N in the		—
Pl Peak Intensity	PL efficiency increase	10ratio	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 1.6% N in the		—
Pl Peak Intensity	PL efficiency increase	10ratio	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 4.2% N in the		—
Pl Peak Intensity	maximum PL intensity increase along nanowire	30ratio	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 1.6% N in the		—
PL Peak	bandgap shift after hydrogenation	0.14eV	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 0.6% N in the		—
PL Peak	bandgap shift after hydrogenation	0.25eV	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 1.6% N in the		—
PL Peak	bandgap shift after hydrogenation	0.5eV	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 4.2% N in the		—
PL Peak	GaAsN low bandgap limit	0.97eV	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 4.2% N in the		—
PL Peak	GaAs-like high bandgap limit	1.43eV	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 4.2% N in the		—
PL Peak	H-activated radiative transition band	1eV	GaAsN	Core-shell-shell GaAs/GaAsN/GaAs nanowire with 1.6% N in the		—
Optical Band Gap	band gap	0.97eV	—	—	—	—
Optical Band Gap	band gap	1.42eV	—	—	—	—