Research paperExperimental GrowthExperimental CharacterizationBandgap Engineering On Demand in GaAsN Nanowires by Post-Growth Hydrogen ImplantationNadine Denis Akant Sharma, Elena Blundo, Francesca Santangeli, Paolo De Vincenzi et al.arXiv·2025·10.48550/arxiv.2511.02697·arXiv:2511.02697AbstractThe bandgap in GaAsN nanowires grown on Si is increased post-growth by up to 460 meV in a reversible, tunable, and non-destructive manner through hydrogen implantation. Core-shell-shell GaAs/GaAsN/GaAs nanowires with N concentrations up to 4.2% are hydrogenated, restoring the GaAs-like bandgap through formation of N-H complexes. Using micro-photoluminescence on individual nanowires, the work shows bandgap recovery, linewidth narrowing, enhanced PL efficiency, reversible thermal annealing, and local laser annealing for spatial bandgap tuning.Read more
Core-shell-shell GaAs/GaAsN/GaAs nanowire with 0.6% N in the GaAsN shell; grown on Si and later hydrogenated.2 characterizations5 properties4 figuresExperimentalGaAsStudied MaterialGaAsNStudied MaterialExpand
Core-shell-shell GaAs/GaAsN/GaAs nanowire with 1.6% N in the GaAsN shell; grown on Si and later hydrogenated.4 characterizations7 properties4 figuresExperimentalGaAsStudied MaterialGaAsNStudied MaterialExpand
Core-shell-shell GaAs/GaAsN/GaAs nanowire with 4.2% N in the GaAsN shell; grown on Si and later hydrogenated.2 characterizations7 properties4 figuresExperimentalGaAsStudied MaterialGaAsNStudied MaterialExpand
Reference GaAs nanowire grown under the same conditions but without nitrogen incorporation.2 characterizations1 property4 figuresExperimentalGaAsStudied MaterialExpand
Research paperExperimental GrowthExperimental CharacterizationBandgap Engineering On Demand in GaAsN Nanowires by Post-Growth Hydrogen ImplantationNadine Denis Akant Sharma, Elena Blundo, Francesca Santangeli, Paolo De Vincenzi et al.arXiv·2025·10.48550/arxiv.2511.02697·arXiv:2511.02697AbstractThe bandgap in GaAsN nanowires grown on Si is increased post-growth by up to 460 meV in a reversible, tunable, and non-destructive manner through hydrogen implantation. Core-shell-shell GaAs/GaAsN/GaAs nanowires with N concentrations up to 4.2% are hydrogenated, restoring the GaAs-like bandgap through formation of N-H complexes. Using micro-photoluminescence on individual nanowires, the work shows bandgap recovery, linewidth narrowing, enhanced PL efficiency, reversible thermal annealing, and local laser annealing for spatial bandgap tuning.Read more
Core-shell-shell GaAs/GaAsN/GaAs nanowire with 0.6% N in the GaAsN shell; grown on Si and later hydrogenated.2 characterizations5 properties4 figuresExperimentalGaAsStudied MaterialGaAsNStudied MaterialExpand
Core-shell-shell GaAs/GaAsN/GaAs nanowire with 1.6% N in the GaAsN shell; grown on Si and later hydrogenated.4 characterizations7 properties4 figuresExperimentalGaAsStudied MaterialGaAsNStudied MaterialExpand
Core-shell-shell GaAs/GaAsN/GaAs nanowire with 4.2% N in the GaAsN shell; grown on Si and later hydrogenated.2 characterizations7 properties4 figuresExperimentalGaAsStudied MaterialGaAsNStudied MaterialExpand
Reference GaAs nanowire grown under the same conditions but without nitrogen incorporation.2 characterizations1 property4 figuresExperimentalGaAsStudied MaterialExpand
Research paperExperimental GrowthExperimental CharacterizationBandgap Engineering On Demand in GaAsN Nanowires by Post-Growth Hydrogen ImplantationNadine Denis Akant Sharma, Elena Blundo, Francesca Santangeli, Paolo De Vincenzi et al.arXiv·2025·10.48550/arxiv.2511.02697·arXiv:2511.02697AbstractThe bandgap in GaAsN nanowires grown on Si is increased post-growth by up to 460 meV in a reversible, tunable, and non-destructive manner through hydrogen implantation. Core-shell-shell GaAs/GaAsN/GaAs nanowires with N concentrations up to 4.2% are hydrogenated, restoring the GaAs-like bandgap through formation of N-H complexes. Using micro-photoluminescence on individual nanowires, the work shows bandgap recovery, linewidth narrowing, enhanced PL efficiency, reversible thermal annealing, and local laser annealing for spatial bandgap tuning.Read more
Core-shell-shell GaAs/GaAsN/GaAs nanowire with 0.6% N in the GaAsN shell; grown on Si and later hydrogenated.2 characterizations5 properties4 figuresExperimentalGaAsStudied MaterialGaAsNStudied MaterialExpand
Core-shell-shell GaAs/GaAsN/GaAs nanowire with 1.6% N in the GaAsN shell; grown on Si and later hydrogenated.4 characterizations7 properties4 figuresExperimentalGaAsStudied MaterialGaAsNStudied MaterialExpand
Core-shell-shell GaAs/GaAsN/GaAs nanowire with 4.2% N in the GaAsN shell; grown on Si and later hydrogenated.2 characterizations7 properties4 figuresExperimentalGaAsStudied MaterialGaAsNStudied MaterialExpand
Reference GaAs nanowire grown under the same conditions but without nitrogen incorporation.2 characterizations1 property4 figuresExperimentalGaAsStudied MaterialExpand
Research paperExperimental GrowthExperimental CharacterizationBandgap Engineering On Demand in GaAsN Nanowires by Post-Growth Hydrogen ImplantationNadine Denis Akant Sharma, Elena Blundo, Francesca Santangeli, Paolo De Vincenzi et al.arXiv·2025·10.48550/arxiv.2511.02697·arXiv:2511.02697AbstractThe bandgap in GaAsN nanowires grown on Si is increased post-growth by up to 460 meV in a reversible, tunable, and non-destructive manner through hydrogen implantation. Core-shell-shell GaAs/GaAsN/GaAs nanowires with N concentrations up to 4.2% are hydrogenated, restoring the GaAs-like bandgap through formation of N-H complexes. Using micro-photoluminescence on individual nanowires, the work shows bandgap recovery, linewidth narrowing, enhanced PL efficiency, reversible thermal annealing, and local laser annealing for spatial bandgap tuning.Read more
Core-shell-shell GaAs/GaAsN/GaAs nanowire with 0.6% N in the GaAsN shell; grown on Si and later hydrogenated.2 characterizations5 properties4 figuresExperimentalGaAsStudied MaterialGaAsNStudied MaterialExpand
Core-shell-shell GaAs/GaAsN/GaAs nanowire with 1.6% N in the GaAsN shell; grown on Si and later hydrogenated.4 characterizations7 properties4 figuresExperimentalGaAsStudied MaterialGaAsNStudied MaterialExpand
Core-shell-shell GaAs/GaAsN/GaAs nanowire with 4.2% N in the GaAsN shell; grown on Si and later hydrogenated.2 characterizations7 properties4 figuresExperimentalGaAsStudied MaterialGaAsNStudied MaterialExpand
Reference GaAs nanowire grown under the same conditions but without nitrogen incorporation.2 characterizations1 property4 figuresExperimentalGaAsStudied MaterialExpand