Research paper
Experimental CharacterizationEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 characterizations15 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| PL Peak | X transition | 1530nm | — | |||
| PL Peak | XX transition | 1530nm | — | |||
| Raman Intensity Ratio | g(2)(0) exciton | 0.005 | — | |||
| Raman Intensity Ratio | g(2)(0) biexciton | 0.015 | — | |||
| Pl Peak Shift | fine structure splitting | 88µeV | — | |||
| Pl Peak Shift | biexciton binding energy | 2.9meV | — | |||
| Pl Peak Fwhm | X transition linewidth | 119µeV | — | |||
| Pl Peak Fwhm | XX transition linewidth | 47µeV | — | |||
| Pl Peak Shift | maximum Rabi rotation pulse area | 4π | — | |||
| Pl Quantum Yield | preparation fidelity X | 81% | — | |||
| Pl Quantum Yield | preparation fidelity XX | 82% | — | |||
| Pl Quantum Yield | pair generation fidelity | 66% | — | |||
| Pl Peak Shift | π-pulse average excitation power | 2.5µW | — | |||
| Pl Peak Intensity | photon indistinguishability | 35% | — | |||
| PL Peak | telecom C-band center | 1550nm | — |
Related documents with shared materials, methods, properties, or citations.
Coherent spectroscopy of a single Mn-doped InGaAs quantum dot
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On-chip Hong-Ou-Mandel interference from separate quantum dot emitters in an integrated circuit
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Bandgap Engineering On Demand in GaAsN Nanowires by Post-Growth Hydrogen Implantation
Optical properties and dynamics of direct and spatially and momentum indirect excitons in AlGaAs/AlAs quantum wells
Spectrally resolved far-field emission pattern of single photon emitters in MoS2
Electrical control of valley polarized charged biexcitons in monolayer WS2
High Strain Engineering of a Suspended WSSe Monolayer Membrane by Indentation and Measured by Tip-enhanced Photoluminescence
Surface Grafting of Graphene Flakes with Fluorescent Dyes: A Tailored Functionalization Approach
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 characterizations15 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| PL Peak | X transition | 1530nm | — | |||
| PL Peak | XX transition | 1530nm | — | |||
| Raman Intensity Ratio | g(2)(0) exciton | 0.005 | — | |||
| Raman Intensity Ratio | g(2)(0) biexciton | 0.015 | — | |||
| Pl Peak Shift | fine structure splitting | 88µeV | — | |||
| Pl Peak Shift | biexciton binding energy | 2.9meV | — | |||
| Pl Peak Fwhm | X transition linewidth | 119µeV | — | |||
| Pl Peak Fwhm | XX transition linewidth | 47µeV | — | |||
| Pl Peak Shift | maximum Rabi rotation pulse area | 4π | — | |||
| Pl Quantum Yield | preparation fidelity X | 81% | — | |||
| Pl Quantum Yield | preparation fidelity XX | 82% | — | |||
| Pl Quantum Yield | pair generation fidelity | 66% | — | |||
| Pl Peak Shift | π-pulse average excitation power | 2.5µW | — | |||
| Pl Peak Intensity | photon indistinguishability | 35% | — | |||
| PL Peak | telecom C-band center | 1550nm | — |
Related documents with shared materials, methods, properties, or citations.
Coherent spectroscopy of a single Mn-doped InGaAs quantum dot
Mechanisms of Afterglow and Thermally Stimulated Luminescence in UV-irradiated InP/ZnS Quantum Dots
On-chip Hong-Ou-Mandel interference from separate quantum dot emitters in an integrated circuit
Tunable quantum emitters on large-scale foundry silicon photonics
Room-temperature quantum emission from interface excitons in mixed-dimensional heterostructures
On demand single photon generation and coherent control of excitons from resonantly driven nanowire quantum dots
Bandgap Engineering On Demand in GaAsN Nanowires by Post-Growth Hydrogen Implantation
Optical properties and dynamics of direct and spatially and momentum indirect excitons in AlGaAs/AlAs quantum wells
Spectrally resolved far-field emission pattern of single photon emitters in MoS2
Electrical control of valley polarized charged biexcitons in monolayer WS2
High Strain Engineering of a Suspended WSSe Monolayer Membrane by Indentation and Measured by Tip-enhanced Photoluminescence
Surface Grafting of Graphene Flakes with Fluorescent Dyes: A Tailored Functionalization Approach
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 characterizations15 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| PL Peak | X transition | 1530nm | — | |||
| PL Peak | XX transition | 1530nm | — | |||
| Raman Intensity Ratio | g(2)(0) exciton | 0.005 | — | |||
| Raman Intensity Ratio | g(2)(0) biexciton | 0.015 | — | |||
| Pl Peak Shift | fine structure splitting | 88µeV | — | |||
| Pl Peak Shift | biexciton binding energy | 2.9meV | — | |||
| Pl Peak Fwhm | X transition linewidth | 119µeV | — | |||
| Pl Peak Fwhm | XX transition linewidth | 47µeV | — | |||
| Pl Peak Shift | maximum Rabi rotation pulse area | 4π | — | |||
| Pl Quantum Yield | preparation fidelity X | 81% | — | |||
| Pl Quantum Yield | preparation fidelity XX | 82% | — | |||
| Pl Quantum Yield | pair generation fidelity | 66% | — | |||
| Pl Peak Shift | π-pulse average excitation power | 2.5µW | — | |||
| Pl Peak Intensity | photon indistinguishability | 35% | — | |||
| PL Peak | telecom C-band center | 1550nm | — |
Related documents with shared materials, methods, properties, or citations.
Coherent spectroscopy of a single Mn-doped InGaAs quantum dot
Mechanisms of Afterglow and Thermally Stimulated Luminescence in UV-irradiated InP/ZnS Quantum Dots
On-chip Hong-Ou-Mandel interference from separate quantum dot emitters in an integrated circuit
Tunable quantum emitters on large-scale foundry silicon photonics
Room-temperature quantum emission from interface excitons in mixed-dimensional heterostructures
On demand single photon generation and coherent control of excitons from resonantly driven nanowire quantum dots
Bandgap Engineering On Demand in GaAsN Nanowires by Post-Growth Hydrogen Implantation
Optical properties and dynamics of direct and spatially and momentum indirect excitons in AlGaAs/AlAs quantum wells
Spectrally resolved far-field emission pattern of single photon emitters in MoS2
Electrical control of valley polarized charged biexcitons in monolayer WS2
High Strain Engineering of a Suspended WSSe Monolayer Membrane by Indentation and Measured by Tip-enhanced Photoluminescence
Surface Grafting of Graphene Flakes with Fluorescent Dyes: A Tailored Functionalization Approach
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 characterizations15 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| PL Peak | X transition | 1530nm | — | |||
| PL Peak | XX transition | 1530nm | — | |||
| Raman Intensity Ratio | g(2)(0) exciton | 0.005 | — | |||
| Raman Intensity Ratio | g(2)(0) biexciton | 0.015 | — | |||
| Pl Peak Shift | fine structure splitting | 88µeV | — | |||
| Pl Peak Shift | biexciton binding energy | 2.9meV | — | |||
| Pl Peak Fwhm | X transition linewidth | 119µeV | — | |||
| Pl Peak Fwhm | XX transition linewidth | 47µeV | — | |||
| Pl Peak Shift | maximum Rabi rotation pulse area | 4π | — | |||
| Pl Quantum Yield | preparation fidelity X | 81% | — | |||
| Pl Quantum Yield | preparation fidelity XX | 82% | — | |||
| Pl Quantum Yield | pair generation fidelity | 66% | — | |||
| Pl Peak Shift | π-pulse average excitation power | 2.5µW | — | |||
| Pl Peak Intensity | photon indistinguishability | 35% | — | |||
| PL Peak | telecom C-band center | 1550nm | — |
Related documents with shared materials, methods, properties, or citations.
Coherent spectroscopy of a single Mn-doped InGaAs quantum dot
Mechanisms of Afterglow and Thermally Stimulated Luminescence in UV-irradiated InP/ZnS Quantum Dots
On-chip Hong-Ou-Mandel interference from separate quantum dot emitters in an integrated circuit
Tunable quantum emitters on large-scale foundry silicon photonics
Room-temperature quantum emission from interface excitons in mixed-dimensional heterostructures
On demand single photon generation and coherent control of excitons from resonantly driven nanowire quantum dots
Bandgap Engineering On Demand in GaAsN Nanowires by Post-Growth Hydrogen Implantation
Optical properties and dynamics of direct and spatially and momentum indirect excitons in AlGaAs/AlAs quantum wells
Spectrally resolved far-field emission pattern of single photon emitters in MoS2
Electrical control of valley polarized charged biexcitons in monolayer WS2
High Strain Engineering of a Suspended WSSe Monolayer Membrane by Indentation and Measured by Tip-enhanced Photoluminescence
Surface Grafting of Graphene Flakes with Fluorescent Dyes: A Tailored Functionalization Approach
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