Research paperExperimental CharacterizationTheoreticalMechanisms of Afterglow and Thermally Stimulated Luminescence in UV-irradiated InP/ZnS Quantum DotsS.S. Savchenko, A.O. Shilov, A.S. Vokhmintsev, I.A. Weinstein2025·10.48550/arxiv.2506.05792·arXiv:2506.05792AbstractThe paper investigates low-temperature afterglow and spectrally resolved thermally stimulated luminescence of UV-irradiated colloidal InP/ZnS quantum dots in the 7–340 K range. The authors analyze decay and TSL kinetics with exponential, power-law, general-order, and Lambert W-based descriptions, infer defect-related recombination involving dangling bonds at the core/shell interface, and estimate trap activation energies and retrapping behavior.Read more
QD-1 InP/ZnS nanocrystal ensemble deposited as a film on a quartz substrate; water-soluble core/shell QDs stabilized with modified polyacrylic acid.1 characterization9 properties3 figuresExperimentalInP/ZnSStudied MaterialSiO₂Substrate / DielectricExpand
QD-2 InP/ZnS nanocrystal ensemble deposited as a film on a quartz substrate; water-soluble core/shell QDs stabilized with modified polyacrylic acid.1 characterization9 properties3 figuresExperimentalInP/ZnSStudied MaterialSiO₂Substrate / DielectricExpand
Bare quartz substrate measured under the same irradiation and stimulation conditions as a control.1 characterizationReferenceSiO₂Substrate / DielectricExpand
Research paperExperimental CharacterizationTheoreticalMechanisms of Afterglow and Thermally Stimulated Luminescence in UV-irradiated InP/ZnS Quantum DotsS.S. Savchenko, A.O. Shilov, A.S. Vokhmintsev, I.A. Weinstein2025·10.48550/arxiv.2506.05792·arXiv:2506.05792AbstractThe paper investigates low-temperature afterglow and spectrally resolved thermally stimulated luminescence of UV-irradiated colloidal InP/ZnS quantum dots in the 7–340 K range. The authors analyze decay and TSL kinetics with exponential, power-law, general-order, and Lambert W-based descriptions, infer defect-related recombination involving dangling bonds at the core/shell interface, and estimate trap activation energies and retrapping behavior.Read more
QD-1 InP/ZnS nanocrystal ensemble deposited as a film on a quartz substrate; water-soluble core/shell QDs stabilized with modified polyacrylic acid.1 characterization9 properties3 figuresExperimentalInP/ZnSStudied MaterialSiO₂Substrate / DielectricExpand
QD-2 InP/ZnS nanocrystal ensemble deposited as a film on a quartz substrate; water-soluble core/shell QDs stabilized with modified polyacrylic acid.1 characterization9 properties3 figuresExperimentalInP/ZnSStudied MaterialSiO₂Substrate / DielectricExpand
Bare quartz substrate measured under the same irradiation and stimulation conditions as a control.1 characterizationReferenceSiO₂Substrate / DielectricExpand
Research paperExperimental CharacterizationTheoreticalMechanisms of Afterglow and Thermally Stimulated Luminescence in UV-irradiated InP/ZnS Quantum DotsS.S. Savchenko, A.O. Shilov, A.S. Vokhmintsev, I.A. Weinstein2025·10.48550/arxiv.2506.05792·arXiv:2506.05792AbstractThe paper investigates low-temperature afterglow and spectrally resolved thermally stimulated luminescence of UV-irradiated colloidal InP/ZnS quantum dots in the 7–340 K range. The authors analyze decay and TSL kinetics with exponential, power-law, general-order, and Lambert W-based descriptions, infer defect-related recombination involving dangling bonds at the core/shell interface, and estimate trap activation energies and retrapping behavior.Read more
QD-1 InP/ZnS nanocrystal ensemble deposited as a film on a quartz substrate; water-soluble core/shell QDs stabilized with modified polyacrylic acid.1 characterization9 properties3 figuresExperimentalInP/ZnSStudied MaterialSiO₂Substrate / DielectricExpand
QD-2 InP/ZnS nanocrystal ensemble deposited as a film on a quartz substrate; water-soluble core/shell QDs stabilized with modified polyacrylic acid.1 characterization9 properties3 figuresExperimentalInP/ZnSStudied MaterialSiO₂Substrate / DielectricExpand
Bare quartz substrate measured under the same irradiation and stimulation conditions as a control.1 characterizationReferenceSiO₂Substrate / DielectricExpand
Research paperExperimental CharacterizationTheoreticalMechanisms of Afterglow and Thermally Stimulated Luminescence in UV-irradiated InP/ZnS Quantum DotsS.S. Savchenko, A.O. Shilov, A.S. Vokhmintsev, I.A. Weinstein2025·10.48550/arxiv.2506.05792·arXiv:2506.05792AbstractThe paper investigates low-temperature afterglow and spectrally resolved thermally stimulated luminescence of UV-irradiated colloidal InP/ZnS quantum dots in the 7–340 K range. The authors analyze decay and TSL kinetics with exponential, power-law, general-order, and Lambert W-based descriptions, infer defect-related recombination involving dangling bonds at the core/shell interface, and estimate trap activation energies and retrapping behavior.Read more
QD-1 InP/ZnS nanocrystal ensemble deposited as a film on a quartz substrate; water-soluble core/shell QDs stabilized with modified polyacrylic acid.1 characterization9 properties3 figuresExperimentalInP/ZnSStudied MaterialSiO₂Substrate / DielectricExpand
QD-2 InP/ZnS nanocrystal ensemble deposited as a film on a quartz substrate; water-soluble core/shell QDs stabilized with modified polyacrylic acid.1 characterization9 properties3 figuresExperimentalInP/ZnSStudied MaterialSiO₂Substrate / DielectricExpand
Bare quartz substrate measured under the same irradiation and stimulation conditions as a control.1 characterizationReferenceSiO₂Substrate / DielectricExpand