Research paper
Experimental GrowthExperimental CharacterizationComputational DFTTheoreticalComputed PL| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | SiO₂ substrate thickness | 285nm | — | — | ||
| Sample Thickness | SbPS₄ nanobundle height | 80nm | — | |||
| Sample Width | SbPS₄ nanobundle width | 700nm | — | |||
| Sample Length | SbPS₄ nanobundle length | 10um | — | |||
| PL Peak | high-energy exciton peak | 1.56eV | — | |||
| PL Peak | low-energy self-trapped exciton peak | 1.36eV | — | |||
| Pl Peak Shift | self-trapping energy | 200meV | — | |||
| Optical Band Gap | band gap | 2.57eV | — | |||
| PL Peak | excitation threshold for strong PL onset | 2.75eV | — | |||
| PL Peak | excitation energy near maximum PL intensity | 3eV | — | |||
| PL Peak | temperature of maximum PL intensity | 30K | — | |||
| PL Peak | temperature where PL falls to half maximum | 70K | — | |||
| Fetet On Off Ratio | perpendicular-to-parallel PL intensity ratio | 0.68 | — | |||
| Fet On Off Ratio | integrated perpendicular-to-parallel absorption coefficient ratio | 0.6 | — | |||
| Pl Peak Shift | Tm parameter | 17K | — | |||
| Pl Peak Shift | alpha fit parameter | 1.4 | — | |||
| Exciton Binding Energy | free exciton binding energy | 1eV | — | |||
| Exciton Self Trapping Energy | self-trapping energy | 0.2eV | — | |||
| Effective Mass | hole effective mass | 2.43me | — | — | ||
| Effective Mass | electron effective mass | 1.67me | — | — | ||
| Effective Mass | reduced mass | 0.99me | — | — | ||
| Exciton Bright Dark Splitting | bright-dark exciton splitting | 2meV | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | SiO₂ substrate thickness | 285nm | — | — | ||
| Sample Thickness | SbPS₄ nanobundle height | 80nm | — | |||
| Sample Width | SbPS₄ nanobundle width | 700nm | — | |||
| Sample Length | SbPS₄ nanobundle length | 10um | — | |||
| PL Peak | high-energy exciton peak | 1.56eV | — | |||
| PL Peak | low-energy self-trapped exciton peak | 1.36eV | — | |||
| Pl Peak Shift | self-trapping energy | 200meV | — | |||
| Optical Band Gap | band gap | 2.57eV | — | |||
| PL Peak | excitation threshold for strong PL onset | 2.75eV | — | |||
| PL Peak | excitation energy near maximum PL intensity | 3eV | — | |||
| PL Peak | temperature of maximum PL intensity | 30K | — | |||
| PL Peak | temperature where PL falls to half maximum | 70K | — | |||
| Fetet On Off Ratio | perpendicular-to-parallel PL intensity ratio | 0.68 | — | |||
| Fet On Off Ratio | integrated perpendicular-to-parallel absorption coefficient ratio | 0.6 | — | |||
| Pl Peak Shift | Tm parameter | 17K | — | |||
| Pl Peak Shift | alpha fit parameter | 1.4 | — | |||
| Exciton Binding Energy | free exciton binding energy | 1eV | — | |||
| Exciton Self Trapping Energy | self-trapping energy | 0.2eV | — | |||
| Effective Mass | hole effective mass | 2.43me | — | — | ||
| Effective Mass | electron effective mass | 1.67me | — | — | ||
| Effective Mass | reduced mass | 0.99me | — | — | ||
| Exciton Bright Dark Splitting | bright-dark exciton splitting | 2meV | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | SiO₂ substrate thickness | 285nm | — | — | ||
| Sample Thickness | SbPS₄ nanobundle height | 80nm | — | |||
| Sample Width | SbPS₄ nanobundle width | 700nm | — | |||
| Sample Length | SbPS₄ nanobundle length | 10um | — | |||
| PL Peak | high-energy exciton peak | 1.56eV | — | |||
| PL Peak | low-energy self-trapped exciton peak | 1.36eV | — | |||
| Pl Peak Shift | self-trapping energy | 200meV | — | |||
| Optical Band Gap | band gap | 2.57eV | — | |||
| PL Peak | excitation threshold for strong PL onset | 2.75eV | — | |||
| PL Peak | excitation energy near maximum PL intensity | 3eV | — | |||
| PL Peak | temperature of maximum PL intensity | 30K | — | |||
| PL Peak | temperature where PL falls to half maximum | 70K | — | |||
| Fetet On Off Ratio | perpendicular-to-parallel PL intensity ratio | 0.68 | — | |||
| Fet On Off Ratio | integrated perpendicular-to-parallel absorption coefficient ratio | 0.6 | — | |||
| Pl Peak Shift | Tm parameter | 17K | — | |||
| Pl Peak Shift | alpha fit parameter | 1.4 | — | |||
| Exciton Binding Energy | free exciton binding energy | 1eV | — | |||
| Exciton Self Trapping Energy | self-trapping energy | 0.2eV | — | |||
| Effective Mass | hole effective mass | 2.43me | — | — | ||
| Effective Mass | electron effective mass | 1.67me | — | — | ||
| Effective Mass | reduced mass | 0.99me | — | — | ||
| Exciton Bright Dark Splitting | bright-dark exciton splitting | 2meV | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | SiO₂ substrate thickness | 285nm | — | — | ||
| Sample Thickness | SbPS₄ nanobundle height | 80nm | — | |||
| Sample Width | SbPS₄ nanobundle width | 700nm | — | |||
| Sample Length | SbPS₄ nanobundle length | 10um | — | |||
| PL Peak | high-energy exciton peak | 1.56eV | — | |||
| PL Peak | low-energy self-trapped exciton peak | 1.36eV | — | |||
| Pl Peak Shift | self-trapping energy | 200meV | — | |||
| Optical Band Gap | band gap | 2.57eV | — | |||
| PL Peak | excitation threshold for strong PL onset | 2.75eV | — | |||
| PL Peak | excitation energy near maximum PL intensity | 3eV | — | |||
| PL Peak | temperature of maximum PL intensity | 30K | — | |||
| PL Peak | temperature where PL falls to half maximum | 70K | — | |||
| Fetet On Off Ratio | perpendicular-to-parallel PL intensity ratio | 0.68 | — | |||
| Fet On Off Ratio | integrated perpendicular-to-parallel absorption coefficient ratio | 0.6 | — | |||
| Pl Peak Shift | Tm parameter | 17K | — | |||
| Pl Peak Shift | alpha fit parameter | 1.4 | — | |||
| Exciton Binding Energy | free exciton binding energy | 1eV | — | |||
| Exciton Self Trapping Energy | self-trapping energy | 0.2eV | — | |||
| Effective Mass | hole effective mass | 2.43me | — | — | ||
| Effective Mass | electron effective mass | 1.67me | — | — | ||
| Effective Mass | reduced mass | 0.99me | — | — | ||
| Exciton Bright Dark Splitting | bright-dark exciton splitting | 2meV | — |
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