Abstract

Spin defects in atomically thin two-dimensional (2D) materials such as hexagonal boron nitride (hBN) attract significant attention for their potential quantum applications. Here, we present another 2D material germanium disulfide (β-GeS₂) characterized by a wide bandgap and potential nuclear-spin-free lattice. Our findings reveal the presence of more than two distinct types of spin defects in single-crystal β-GeS2. Coherent control of one type defect has been successfully demonstrated at both 5 K and room temperature, and the coherence time T₂ can achieve tens of microseconds, 100-folds of that of negatively charged boron vacancy (VB−) in hBN. We tentatively assign the observed optical signals come from substitution defects.

Abstract

Spin defects in atomically thin two-dimensional (2D) materials such as hexagonal boron nitride (hBN) attract significant attention for their potential quantum applications. Here, we present another 2D material germanium disulfide (β-GeS₂) characterized by a wide bandgap and potential nuclear-spin-free lattice. Our findings reveal the presence of more than two distinct types of spin defects in single-crystal β-GeS2. Coherent control of one type defect has been successfully demonstrated at both 5 K and room temperature, and the coherence time T₂ can achieve tens of microseconds, 100-folds of that of negatively charged boron vacancy (VB−) in hBN. We tentatively assign the observed optical signals come from substitution defects.

Abstract

Spin defects in atomically thin two-dimensional (2D) materials such as hexagonal boron nitride (hBN) attract significant attention for their potential quantum applications. Here, we present another 2D material germanium disulfide (β-GeS₂) characterized by a wide bandgap and potential nuclear-spin-free lattice. Our findings reveal the presence of more than two distinct types of spin defects in single-crystal β-GeS2. Coherent control of one type defect has been successfully demonstrated at both 5 K and room temperature, and the coherence time T₂ can achieve tens of microseconds, 100-folds of that of negatively charged boron vacancy (VB−) in hBN. We tentatively assign the observed optical signals come from substitution defects.

Abstract

Spin defects in atomically thin two-dimensional (2D) materials such as hexagonal boron nitride (hBN) attract significant attention for their potential quantum applications. Here, we present another 2D material germanium disulfide (β-GeS₂) characterized by a wide bandgap and potential nuclear-spin-free lattice. Our findings reveal the presence of more than two distinct types of spin defects in single-crystal β-GeS2. Coherent control of one type defect has been successfully demonstrated at both 5 K and room temperature, and the coherence time T₂ can achieve tens of microseconds, 100-folds of that of negatively charged boron vacancy (VB−) in hBN. We tentatively assign the observed optical signals come from substitution defects.