Tunable quantum emitters on large-scale foundry silicon photonics

Hugo Larocque; Mustafa Atabey Buyukkaya; Carlos Errando-Herranz; Samuel Harper; Jacques Carolan; Chang-Min Lee; Christopher J. K. Richardson; Gerald L. Leake; Daniel J. Coleman; Michael L. Fanto; Edo Waks; Dirk Englund

doi:10.1038/s41467-024-50208-0

Paper details

Research paper

Experimental CharacterizationComputational Multiscale

Tunable quantum emitters on large-scale foundry silicon photonics

Hugo Larocque, Mustafa Atabey Buyukkaya, Carlos Errando-Herranz, Samuel Harper et al.

arXiv preprint·2023·10.1038/s41467-024-50208-0·arXiv:2306.06460

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Hybrid integrated quantum-photonic device consisting of a transfer-printed InP microchiplet with embedded InAs quantum dots coupled to a foundry-fabricated SOI photonic integrated circuit with oxide spacer and Cr top electrode.

5 preparations4 characterizations6 properties6 figures

ExperimentalInAsStudied MaterialInPStudied MaterialSiSubstrate / DielectricSiO₂Substrate / DielectricCrCapping Or Contact

Materials

InAs

Studied Material

Also known as

quantum dotsQD

studied material

InP

Studied Material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Tunable quantum emitters on large-scale foundry silicon photonics | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Condition	Source
Pl Peak Intensity	QD emission spectrum	multiple spectrally distinct telecom O-band lines	InAs	Hybrid integrated quantum-photonic device consisting of a tr		—
Emitter Density	QD density	10QDs µm⁻²	InAs	Hybrid integrated quantum-photonic device consisting of a tr		—
Chiplet Placement Accuracy	microchiplet placement accuracy	44nm	InP Si	Hybrid integrated quantum-photonic device consisting of a tr		—
Transfer Efficiency	optical transfer efficiency (simulated)	99.5%	InP Si	Hybrid integrated quantum-photonic device consisting of a tr		—
Transfer Efficiency	fiber-to-fiber transfer efficiency	86 ± 1%	InP Si	Hybrid integrated quantum-photonic device consisting of a tr		—
G2 Zero Delay	g(2)(0)	0.12	InAs	Hybrid integrated quantum-photonic device consisting of a tr		—
PL Peak	regex-detected PL peak	780nm	—	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Pl Peak Intensity	QD emission spectrum	multiple spectrally distinct telecom O-band lines	InAs	Hybrid integrated quantum-photonic device consisting of a tr		—
Emitter Density	QD density	10QDs µm⁻²	InAs	Hybrid integrated quantum-photonic device consisting of a tr		—
Chiplet Placement Accuracy	microchiplet placement accuracy	44nm	InP Si	Hybrid integrated quantum-photonic device consisting of a tr		—
Transfer Efficiency	optical transfer efficiency (simulated)	99.5%	InP Si	Hybrid integrated quantum-photonic device consisting of a tr		—
Transfer Efficiency	fiber-to-fiber transfer efficiency	86 ± 1%	InP Si	Hybrid integrated quantum-photonic device consisting of a tr		—
G2 Zero Delay	g(2)(0)	0.12	InAs	Hybrid integrated quantum-photonic device consisting of a tr		—
PL Peak	regex-detected PL peak	780nm	—	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Pl Peak Intensity	QD emission spectrum	multiple spectrally distinct telecom O-band lines	InAs	Hybrid integrated quantum-photonic device consisting of a tr		—
Emitter Density	QD density	10QDs µm⁻²	InAs	Hybrid integrated quantum-photonic device consisting of a tr		—
Chiplet Placement Accuracy	microchiplet placement accuracy	44nm	InP Si	Hybrid integrated quantum-photonic device consisting of a tr		—
Transfer Efficiency	optical transfer efficiency (simulated)	99.5%	InP Si	Hybrid integrated quantum-photonic device consisting of a tr		—
Transfer Efficiency	fiber-to-fiber transfer efficiency	86 ± 1%	InP Si	Hybrid integrated quantum-photonic device consisting of a tr		—
G2 Zero Delay	g(2)(0)	0.12	InAs	Hybrid integrated quantum-photonic device consisting of a tr		—
PL Peak	regex-detected PL peak	780nm	—	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Pl Peak Intensity	QD emission spectrum	multiple spectrally distinct telecom O-band lines	InAs	Hybrid integrated quantum-photonic device consisting of a tr		—
Emitter Density	QD density	10QDs µm⁻²	InAs	Hybrid integrated quantum-photonic device consisting of a tr		—
Chiplet Placement Accuracy	microchiplet placement accuracy	44nm	InP Si	Hybrid integrated quantum-photonic device consisting of a tr		—
Transfer Efficiency	optical transfer efficiency (simulated)	99.5%	InP Si	Hybrid integrated quantum-photonic device consisting of a tr		—
Transfer Efficiency	fiber-to-fiber transfer efficiency	86 ± 1%	InP Si	Hybrid integrated quantum-photonic device consisting of a tr		—
G2 Zero Delay	g(2)(0)	0.12	InAs	Hybrid integrated quantum-photonic device consisting of a tr		—
PL Peak	regex-detected PL peak	780nm	—	—	—	—

Tunable quantum emitters on large-scale foundry silicon photonics

Samples

Hybrid integrated quantum-photonic device consisting of a transfer-printed InP microchiplet with embedded InAs quantum dots coupled to a foundry-fabricated SOI photonic integrated circuit with oxide spacer and Cr top electrode.

Materials

Why these are connected

Tunable quantum emitters on large-scale foundry silicon photonics

Samples

Hybrid integrated quantum-photonic device consisting of a transfer-printed InP microchiplet with embedded InAs quantum dots coupled to a foundry-fabricated SOI photonic integrated circuit with oxide spacer and Cr top electrode.

Materials

Why these are connected

Tunable quantum emitters on large-scale foundry silicon photonics

Samples

Hybrid integrated quantum-photonic device consisting of a transfer-printed InP microchiplet with embedded InAs quantum dots coupled to a foundry-fabricated SOI photonic integrated circuit with oxide spacer and Cr top electrode.

Materials

Why these are connected

Tunable quantum emitters on large-scale foundry silicon photonics

Samples

Hybrid integrated quantum-photonic device consisting of a transfer-printed InP microchiplet with embedded InAs quantum dots coupled to a foundry-fabricated SOI photonic integrated circuit with oxide spacer and Cr top electrode.

Materials

Why these are connected

Tunable quantum emitters on large-scale foundry silicon photonics

Samples

Hybrid integrated quantum-photonic device consisting of a transfer-printed InP microchiplet with embedded InAs quantum dots coupled to a foundry-fabricated SOI photonic integrated circuit with oxide spacer and Cr top electrode.

Materials

Why these are connected

Tunable quantum emitters on large-scale foundry silicon photonics

Samples

Hybrid integrated quantum-photonic device consisting of a transfer-printed InP microchiplet with embedded InAs quantum dots coupled to a foundry-fabricated SOI photonic integrated circuit with oxide spacer and Cr top electrode.

Materials

Why these are connected

Tunable quantum emitters on large-scale foundry silicon photonics

Samples

Hybrid integrated quantum-photonic device consisting of a transfer-printed InP microchiplet with embedded InAs quantum dots coupled to a foundry-fabricated SOI photonic integrated circuit with oxide spacer and Cr top electrode.

Materials

Why these are connected

Tunable quantum emitters on large-scale foundry silicon photonics

Samples

Hybrid integrated quantum-photonic device consisting of a transfer-printed InP microchiplet with embedded InAs quantum dots coupled to a foundry-fabricated SOI photonic integrated circuit with oxide spacer and Cr top electrode.

Materials

Why these are connected

Processing

Characterization

Properties

Simulations

Processing

Characterization

Properties

Simulations

Processing

Characterization

Properties

Simulations

Processing

Characterization

Properties

Simulations