Optical absorption in hexagonal-diamond Si and Ge nanowires: insights from STEM-EELS experiments and ab initio theory

Luiz H. G. Tizei; Michele Re Fiorentin; Thomas Dursap; Theodorus M. van den Berg; Marc Túnica; Maurizia Palummo; Mathieu Kociak; Laetitia Vincent; Michele Amato

doi:10.1021/acs.nanolett.5c01406

Research paper

Experimental CharacterizationComputational DFTComputed Band Structure

Optical absorption in hexagonal-diamond Si and Ge nanowires: insights from STEM-EELS experiments and ab initio theory

Luiz H. G. Tizei, Michele Re Fiorentin, Thomas Dursap, Theodorus M. van den Berg et al.

arXiv·2025·arXiv:2506.10543

Research paper

Experimental CharacterizationComputational DFTComputed Band Structure

Optical absorption in hexagonal-diamond Si and Ge nanowires: insights from STEM-EELS experiments and ab initio theory

Luiz H. G. Tizei, Michele Re Fiorentin, Thomas Dursap, Theodorus M. van den Berg et al.

arXiv·2025·arXiv:2506.10543

Research paper

Experimental CharacterizationComputational DFTComputed Band Structure

Optical absorption in hexagonal-diamond Si and Ge nanowires: insights from STEM-EELS experiments and ab initio theory

Luiz H. G. Tizei, Michele Re Fiorentin, Thomas Dursap, Theodorus M. van den Berg et al.

arXiv·2025·arXiv:2506.10543

Research paper

Experimental CharacterizationComputational DFTComputed Band Structure

Optical absorption in hexagonal-diamond Si and Ge nanowires: insights from STEM-EELS experiments and ab initio theory

Luiz H. G. Tizei, Michele Re Fiorentin, Thomas Dursap, Theodorus M. van den Berg et al.

arXiv·2025·arXiv:2506.10543

Research paper

Experimental CharacterizationComputational DFTComputed Band Structure

Optical absorption in hexagonal-diamond Si and Ge nanowires: insights from STEM-EELS experiments and ab initio theory

Luiz H. G. Tizei, Michele Re Fiorentin, Thomas Dursap, Theodorus M. van den Berg et al.

arXiv·2025·arXiv:2506.10543

Research paper

Experimental CharacterizationComputational DFTComputed Band Structure

Optical absorption in hexagonal-diamond Si and Ge nanowires: insights from STEM-EELS experiments and ab initio theory

Luiz H. G. Tizei, Michele Re Fiorentin, Thomas Dursap, Theodorus M. van den Berg et al.

arXiv·2025·arXiv:2506.10543

Research paper

Experimental CharacterizationComputational DFTComputed Band Structure

Optical absorption in hexagonal-diamond Si and Ge nanowires: insights from STEM-EELS experiments and ab initio theory

Luiz H. G. Tizei, Michele Re Fiorentin, Thomas Dursap, Theodorus M. van den Berg et al.

arXiv·2025·arXiv:2506.10543

Research paper

Experimental CharacterizationComputational DFTComputed Band Structure

Optical absorption in hexagonal-diamond Si and Ge nanowires: insights from STEM-EELS experiments and ab initio theory

Luiz H. G. Tizei, Michele Re Fiorentin, Thomas Dursap, Theodorus M. van den Berg et al.

arXiv·2025·arXiv:2506.10543

Single-crystalline 2H-Si nanowire nanobranch grown in situ on a wurtzite GaAs stem with an Au catalyst, measured by STEM-EELS in intersecting and aloof configurations.

1 preparation4 characterizations4 properties3 figures

ExperimentalSiStudied MaterialGaAsSubstrate / DielectricAuCatalyst Substrate

Single-crystalline 2H-Ge nanowire nanobranch grown in situ on a wurtzite GaAs stem with an Au catalyst; sample includes a thin radial 3C-Ge shell on the 2H-Ge core, measured by STEM-EELS in intersecting and aloof configurations.

1 preparation4 characterizations5 properties3 figures

ExperimentalGeStudied MaterialGaAsSubstrate / DielectricAuCatalyst SubstrateGeStudied Material

Single-crystalline 2H-Si nanowire nanobranch grown in situ on a wurtzite GaAs stem with an Au catalyst, measured by STEM-EELS in intersecting and aloof configurations.

1 preparation4 characterizations4 properties3 figures

ExperimentalSiStudied MaterialGaAsSubstrate / DielectricAuCatalyst Substrate

Single-crystalline 2H-Ge nanowire nanobranch grown in situ on a wurtzite GaAs stem with an Au catalyst; sample includes a thin radial 3C-Ge shell on the 2H-Ge core, measured by STEM-EELS in intersecting and aloof configurations.

1 preparation4 characterizations5 properties3 figures

ExperimentalGeStudied MaterialGaAsSubstrate / DielectricAuCatalyst SubstrateGeStudied Material

Single-crystalline 2H-Si nanowire nanobranch grown in situ on a wurtzite GaAs stem with an Au catalyst, measured by STEM-EELS in intersecting and aloof configurations.

1 preparation4 characterizations4 properties3 figures

ExperimentalSiStudied MaterialGaAsSubstrate / DielectricAuCatalyst Substrate

Single-crystalline 2H-Ge nanowire nanobranch grown in situ on a wurtzite GaAs stem with an Au catalyst; sample includes a thin radial 3C-Ge shell on the 2H-Ge core, measured by STEM-EELS in intersecting and aloof configurations.

1 preparation4 characterizations5 properties3 figures

ExperimentalGeStudied MaterialGaAsSubstrate / DielectricAuCatalyst SubstrateGeStudied Material

Single-crystalline 2H-Si nanowire nanobranch grown in situ on a wurtzite GaAs stem with an Au catalyst, measured by STEM-EELS in intersecting and aloof configurations.

1 preparation4 characterizations4 properties3 figures

ExperimentalSiStudied MaterialGaAsSubstrate / DielectricAuCatalyst Substrate

Single-crystalline 2H-Ge nanowire nanobranch grown in situ on a wurtzite GaAs stem with an Au catalyst; sample includes a thin radial 3C-Ge shell on the 2H-Ge core, measured by STEM-EELS in intersecting and aloof configurations.

1 preparation4 characterizations5 properties3 figures

ExperimentalGeStudied MaterialGaAsSubstrate / DielectricAuCatalyst SubstrateGeStudied Material

Type	Label	Value	Material	Sample	Source
Absorption Onset	absorption onset	2.77eV	Si	Single-crystalline 2H-Si nanowire nanobranch grown in situ o	—
Absorption Peak	dominant absorption peak	3.7eV	Si	Single-crystalline 2H-Si nanowire nanobranch grown in situ o	—
Band Gap	fundamental indirect band gap	0.92eV	Si	Single-crystalline 2H-Si nanowire nanobranch grown in situ o	—
Band Gap	direct band gap	1.75eV	Si	Single-crystalline 2H-Si nanowire nanobranch grown in situ o	—
Absorption Onset	absorption onset	1eV	Ge	Single-crystalline 2H-Ge nanowire nanobranch grown in situ o	—
Band Gap	direct band gap at Gamma	0.26eV	Ge	Single-crystalline 2H-Ge nanowire nanobranch grown in situ o	—
Absorption Peak	dominant absorption peak	2eV	Ge	Single-crystalline 2H-Ge nanowire nanobranch grown in situ o	—
Absorption Onset	absorption onset	2eV	Ge	Single-crystalline 2H-Ge nanowire nanobranch grown in situ o	—
Absorption Onset	direct-gap onset not detectable above noise	0.3eV	Ge	Single-crystalline 2H-Ge nanowire nanobranch grown in situ o	—

Type	Label	Value	Material	Sample	Source
Absorption Onset	absorption onset	2.77eV	Si	Single-crystalline 2H-Si nanowire nanobranch grown in situ o	—
Absorption Peak	dominant absorption peak	3.7eV	Si	Single-crystalline 2H-Si nanowire nanobranch grown in situ o	—
Band Gap	fundamental indirect band gap	0.92eV	Si	Single-crystalline 2H-Si nanowire nanobranch grown in situ o	—
Band Gap	direct band gap	1.75eV	Si	Single-crystalline 2H-Si nanowire nanobranch grown in situ o	—
Absorption Onset	absorption onset	1eV	Ge	Single-crystalline 2H-Ge nanowire nanobranch grown in situ o	—
Band Gap	direct band gap at Gamma	0.26eV	Ge	Single-crystalline 2H-Ge nanowire nanobranch grown in situ o	—
Absorption Peak	dominant absorption peak	2eV	Ge	Single-crystalline 2H-Ge nanowire nanobranch grown in situ o	—
Absorption Onset	absorption onset	2eV	Ge	Single-crystalline 2H-Ge nanowire nanobranch grown in situ o	—
Absorption Onset	direct-gap onset not detectable above noise	0.3eV	Ge	Single-crystalline 2H-Ge nanowire nanobranch grown in situ o	—

Type	Label	Value	Material	Sample	Source
Absorption Onset	absorption onset	2.77eV	Si	Single-crystalline 2H-Si nanowire nanobranch grown in situ o	—
Absorption Peak	dominant absorption peak	3.7eV	Si	Single-crystalline 2H-Si nanowire nanobranch grown in situ o	—
Band Gap	fundamental indirect band gap	0.92eV	Si	Single-crystalline 2H-Si nanowire nanobranch grown in situ o	—
Band Gap	direct band gap	1.75eV	Si	Single-crystalline 2H-Si nanowire nanobranch grown in situ o	—
Absorption Onset	absorption onset	1eV	Ge	Single-crystalline 2H-Ge nanowire nanobranch grown in situ o	—
Band Gap	direct band gap at Gamma	0.26eV	Ge	Single-crystalline 2H-Ge nanowire nanobranch grown in situ o	—
Absorption Peak	dominant absorption peak	2eV	Ge	Single-crystalline 2H-Ge nanowire nanobranch grown in situ o	—
Absorption Onset	absorption onset	2eV	Ge	Single-crystalline 2H-Ge nanowire nanobranch grown in situ o	—
Absorption Onset	direct-gap onset not detectable above noise	0.3eV	Ge	Single-crystalline 2H-Ge nanowire nanobranch grown in situ o	—

Type	Label	Value	Material	Sample	Source
Absorption Onset	absorption onset	2.77eV	Si	Single-crystalline 2H-Si nanowire nanobranch grown in situ o	—
Absorption Peak	dominant absorption peak	3.7eV	Si	Single-crystalline 2H-Si nanowire nanobranch grown in situ o	—
Band Gap	fundamental indirect band gap	0.92eV	Si	Single-crystalline 2H-Si nanowire nanobranch grown in situ o	—
Band Gap	direct band gap	1.75eV	Si	Single-crystalline 2H-Si nanowire nanobranch grown in situ o	—
Absorption Onset	absorption onset	1eV	Ge	Single-crystalline 2H-Ge nanowire nanobranch grown in situ o	—
Band Gap	direct band gap at Gamma	0.26eV	Ge	Single-crystalline 2H-Ge nanowire nanobranch grown in situ o	—
Absorption Peak	dominant absorption peak	2eV	Ge	Single-crystalline 2H-Ge nanowire nanobranch grown in situ o	—
Absorption Onset	absorption onset	2eV	Ge	Single-crystalline 2H-Ge nanowire nanobranch grown in situ o	—
Absorption Onset	direct-gap onset not detectable above noise	0.3eV	Ge	Single-crystalline 2H-Ge nanowire nanobranch grown in situ o	—

Optical absorption in hexagonal-diamond Si and Ge nanowires: insights from STEM-EELS experiments and ab initio theory

Optical absorption in hexagonal-diamond Si and Ge nanowires: insights from STEM-EELS experiments and ab initio theory

Optical absorption in hexagonal-diamond Si and Ge nanowires: insights from STEM-EELS experiments and ab initio theory

Optical absorption in hexagonal-diamond Si and Ge nanowires: insights from STEM-EELS experiments and ab initio theory

Optical absorption in hexagonal-diamond Si and Ge nanowires: insights from STEM-EELS experiments and ab initio theory

Optical absorption in hexagonal-diamond Si and Ge nanowires: insights from STEM-EELS experiments and ab initio theory

Optical absorption in hexagonal-diamond Si and Ge nanowires: insights from STEM-EELS experiments and ab initio theory

Optical absorption in hexagonal-diamond Si and Ge nanowires: insights from STEM-EELS experiments and ab initio theory

Samples

Single-crystalline 2H-Si nanowire nanobranch grown in situ on a wurtzite GaAs stem with an Au catalyst, measured by STEM-EELS in intersecting and aloof configurations.

Single-crystalline 2H-Ge nanowire nanobranch grown in situ on a wurtzite GaAs stem with an Au catalyst; sample includes a thin radial 3C-Ge shell on the 2H-Ge core, measured by STEM-EELS in intersecting and aloof configurations.

Materials

Growth

Characterization

Properties

Simulations

Why these are connected

Samples

Single-crystalline 2H-Si nanowire nanobranch grown in situ on a wurtzite GaAs stem with an Au catalyst, measured by STEM-EELS in intersecting and aloof configurations.

Single-crystalline 2H-Ge nanowire nanobranch grown in situ on a wurtzite GaAs stem with an Au catalyst; sample includes a thin radial 3C-Ge shell on the 2H-Ge core, measured by STEM-EELS in intersecting and aloof configurations.

Materials

Growth

Characterization

Properties

Simulations

Why these are connected

Samples

Single-crystalline 2H-Si nanowire nanobranch grown in situ on a wurtzite GaAs stem with an Au catalyst, measured by STEM-EELS in intersecting and aloof configurations.

Single-crystalline 2H-Ge nanowire nanobranch grown in situ on a wurtzite GaAs stem with an Au catalyst; sample includes a thin radial 3C-Ge shell on the 2H-Ge core, measured by STEM-EELS in intersecting and aloof configurations.

Materials

Growth

Characterization

Properties

Simulations

Why these are connected

Samples

Single-crystalline 2H-Si nanowire nanobranch grown in situ on a wurtzite GaAs stem with an Au catalyst, measured by STEM-EELS in intersecting and aloof configurations.

Single-crystalline 2H-Ge nanowire nanobranch grown in situ on a wurtzite GaAs stem with an Au catalyst; sample includes a thin radial 3C-Ge shell on the 2H-Ge core, measured by STEM-EELS in intersecting and aloof configurations.

Materials

Growth

Characterization

Properties

Simulations

Why these are connected