Phase-space analysis of a two-section InP laser as an all-optical spiking neuron: dependency on control and design parameters | Matter42 Literature
Paper details
Research paper
Computational Kinetic Model
Phase-space analysis of a two-section InP laser as an all-optical spiking neuron: dependency on control and design parameters
Lukas Puts, Daan Lenstra, Kevin Williams, Weiming Yao
Neuromorphic Computing and Engineering·2025·10.xxxx/XXXX·arXiv:2404.12771
Samples
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
A modeled integrated two-section InP laser comprising a saturable absorber, semiconductor optical amplifier, passive mirror elements, and ridge waveguides, described by a lumped-cavity rate-equation model.
No measurements recorded
SimulatedInPStudied Material
Materials
InP
InP
Studied Material
Also known as
generic InP technology platformInP platform
studied material
Simulations
Kinetic Rate Equation Model
Three coupled differential equations for gain-carrier density NG, absorber-carrier density NQ, and total photon number S in a lumped-cavity two-section laser model; compact-model parametrisation extracted from a generic InP technology platform; phase-space analysis and time-trace simulation.
Why these are connected
Related documents with shared materials, methods, properties, or citations.
Phase-space analysis of a two-section InP laser as an all-optical spiking neuron: dependency on control and design parameters
Lukas Puts, Daan Lenstra, Kevin Williams, Weiming Yao
Neuromorphic Computing and Engineering·2025·10.xxxx/XXXX·arXiv:2404.12771
Samples
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
A modeled integrated two-section InP laser comprising a saturable absorber, semiconductor optical amplifier, passive mirror elements, and ridge waveguides, described by a lumped-cavity rate-equation model.
No measurements recorded
SimulatedInPStudied Material
Materials
InP
InP
Studied Material
Also known as
generic InP technology platformInP platform
studied material
Simulations
Kinetic Rate Equation Model
Three coupled differential equations for gain-carrier density NG, absorber-carrier density NQ, and total photon number S in a lumped-cavity two-section laser model; compact-model parametrisation extracted from a generic InP technology platform; phase-space analysis and time-trace simulation.
Why these are connected
Related documents with shared materials, methods, properties, or citations.
Phase-space analysis of a two-section InP laser as an all-optical spiking neuron: dependency on control and design parameters
Lukas Puts, Daan Lenstra, Kevin Williams, Weiming Yao
Neuromorphic Computing and Engineering·2025·10.xxxx/XXXX·arXiv:2404.12771
Samples
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
A modeled integrated two-section InP laser comprising a saturable absorber, semiconductor optical amplifier, passive mirror elements, and ridge waveguides, described by a lumped-cavity rate-equation model.
No measurements recorded
SimulatedInPStudied Material
Materials
InP
InP
Studied Material
Also known as
generic InP technology platformInP platform
studied material
Simulations
Kinetic Rate Equation Model
Three coupled differential equations for gain-carrier density NG, absorber-carrier density NQ, and total photon number S in a lumped-cavity two-section laser model; compact-model parametrisation extracted from a generic InP technology platform; phase-space analysis and time-trace simulation.
Why these are connected
Related documents with shared materials, methods, properties, or citations.
Phase-space analysis of a two-section InP laser as an all-optical spiking neuron: dependency on control and design parameters
Lukas Puts, Daan Lenstra, Kevin Williams, Weiming Yao
Neuromorphic Computing and Engineering·2025·10.xxxx/XXXX·arXiv:2404.12771
Samples
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
A modeled integrated two-section InP laser comprising a saturable absorber, semiconductor optical amplifier, passive mirror elements, and ridge waveguides, described by a lumped-cavity rate-equation model.
No measurements recorded
SimulatedInPStudied Material
Materials
InP
InP
Studied Material
Also known as
generic InP technology platformInP platform
studied material
Simulations
Kinetic Rate Equation Model
Three coupled differential equations for gain-carrier density NG, absorber-carrier density NQ, and total photon number S in a lumped-cavity two-section laser model; compact-model parametrisation extracted from a generic InP technology platform; phase-space analysis and time-trace simulation.
Why these are connected
Related documents with shared materials, methods, properties, or citations.