Highly fabrication tolerant InP based polarization beam splitter based on p-i-n structure

Paper details

Research paper

Experimental Characterization

Nicolás Abadía, Xiangyang Dai, Qiaoyin Lu, Wei-Hua Guo et al.

Optics Express·2017·arXiv:2204.13026

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

2 properties

ExperimentalInPStudied MaterialGa0.11In0.89As0.24P0.76Studied MaterialGa0.2In0.8As0.42P0.58Studied MaterialGa0.47In0.53AsStudied Material

InP

Studied Material

Also known as

indium phosphide

studied material

Ga0.11In0.89As0.24P0.76

Studied Material

studied material

Related documents with shared materials, methods, properties, or citations.

Highly fabrication tolerant InP based polarization beam splitter based on p-i-n structure | Matter42 Literature

Type	Label	Value	Material	Sample	Condition	Source
Polarization Extinction Ratio	extinction ratio	>15dB	InP Ga0.11In0.89As0.24P0.76 Ga0.2In0.8As0.42P0.58 Ga0.47In0.53As	InP-based p-i-n wafer structure used for the symmetric MZI p		—
On Chip Loss	on-chip loss	3.5dB	InP Ga0.11In0.89As0.24P0.76 Ga0.2In0.8As0.42P0.58 Ga0.47In0.53As	InP-based p-i-n wafer structure used for the symmetric MZI p		—

Type	Label	Value	Material	Sample	Condition	Source
Polarization Extinction Ratio	extinction ratio	>15dB	InP Ga0.11In0.89As0.24P0.76 Ga0.2In0.8As0.42P0.58 Ga0.47In0.53As	InP-based p-i-n wafer structure used for the symmetric MZI p		—
On Chip Loss	on-chip loss	3.5dB	InP Ga0.11In0.89As0.24P0.76 Ga0.2In0.8As0.42P0.58 Ga0.47In0.53As	InP-based p-i-n wafer structure used for the symmetric MZI p		—

Type	Label	Value	Material	Sample	Condition	Source
Polarization Extinction Ratio	extinction ratio	>15dB	InP Ga0.11In0.89As0.24P0.76 Ga0.2In0.8As0.42P0.58 Ga0.47In0.53As	InP-based p-i-n wafer structure used for the symmetric MZI p		—
On Chip Loss	on-chip loss	3.5dB	InP Ga0.11In0.89As0.24P0.76 Ga0.2In0.8As0.42P0.58 Ga0.47In0.53As	InP-based p-i-n wafer structure used for the symmetric MZI p		—

Type	Label	Value	Material	Sample	Condition	Source
Polarization Extinction Ratio	extinction ratio	>15dB	InP Ga0.11In0.89As0.24P0.76 Ga0.2In0.8As0.42P0.58 Ga0.47In0.53As	InP-based p-i-n wafer structure used for the symmetric MZI p		—
On Chip Loss	on-chip loss	3.5dB	InP Ga0.11In0.89As0.24P0.76 Ga0.2In0.8As0.42P0.58 Ga0.47In0.53As	InP-based p-i-n wafer structure used for the symmetric MZI p		—