Patent
US 12,217,967 B2INDIUM PHOSPHIDE SUBSTRATE
Shunsuke Oka, Kenji Suzuki, Hideaki Hayashi
JX ADVANCED METALS CORPORATION, Tokyo (JP)·Feb. 4, 2025·US
Copyright © 2026 Matter42. All rights reserved.
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US 12,217,967 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross-sectional view of an indium phosphide substrate near a wafer edge; B₂
FIG. 2 is a schematic cross-sectional view of an indium phosphide substrate near a wafer edge;
FIG. 3 is a schematic cross-sectional view of an indium phosphide substrate near a wafer edge;
FIG. 4 is a schematic cross-sectional view of an indium phosphide substrate of Example near a wafer edge;
FIG. 5 is a schematic cross-sectional view for explaining a radius of curvature Rf of an edge round of an indium phosphide substrate; and
FIG. 6 is a schematic cross-sectional view of the vicinity of a wafer edge having tapered portions and a straight portion of an indium phosphide substrate.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An indium phosphide substrate, wherein when planes A each parallel to a main surface are taken in the indium phosphide substrate, the indium phosphide substrate has an angle θ on a main surface side of 0°<θ≤110° for each of the planes A where a distance from the main surface to each of the planes A is 100 µm or more and 200 µm or less, wherein the angle θ is formed by a plane B, the plane B including an intersection line of an edge of the indium phosphide substrate with each of the planes A and being tangent to the edge, and a plane of each of the planes A extending in an outside direction of the indium phosphide substrate, and wherein in a cross section orthogonal to the edge, the indium phosphide substrate has an edge round at least on the main surface side, and the edge round on the main surface side has a radius of curvature Rf of 223 to 350 µm, a chamfered width from the edge on the main surface side of the wafer indium phosphide substrate is in the range of 50 to 95 µm, the edge includes a straight portion smoothly connected to the edge round and along a thickness direction of the indium phosphide substrate.
The indium phosphide substrate according to claim 1, wherein each of the angles θ is 60°≤θ≤100° for all of the planes A where the distance from the main surface is 100 µm or more and 200 µm or less.
The indium phosphide substrate according to claim 1, wherein the radius of curvature Rf of the edge round on the main surface side is from 303 to 338 µm. ∗ ∗ ∗ ∗ ∗
An indium phosphide substrate, wherein when planes A each parallel to a main surface are taken in the indium phosphide substrate, the indium phosphide substrate has an angle θ on a main surface side of 0°<θ≤100° for each of the planes A where a distance from the main surface to each of the planes A is 150 µm or more and 200 µm or less, wherein the angle θ is formed by a plane B, the plane B including an intersection line of an edge of the indium phosphide substrate with each of the planes A and being tangent to the edge, and a plane of each of the planes A extending in an outside direction of the indium phosphide substrate, and wherein in a cross section orthogonal to the edge, the indium phosphide substrate has an edge round at least B₂ 1-continued Exam- Exam- Exam- Exam- Comp. Comp. ple 1 ple 2 ple 3 ple 4 1 2 53 73 95 53 390 335 188 355 58 405 270 460 59.0 52.4 50.2 59 14.8 12.9 21.3 23.3 53.1 22.4 12.5 11.8 223 338 303 230 178 183 Edge and 90.0 99.5 107.0 96.9 115.5 131.0 in Wafer Wafer Edge and 90.0 91.5 85.7 93.9 108.6 103.8 in Wafer Wafer Edge and 63.2 91.5 90.0 90.0 95.3 96.0 in Wafer on the main surface side, and the edge round on the main surface side has a radius of curvature Rf of 223 to 350 µm, a chamfered width from the edge on the main surface side of the indium phosphide substrate is in the range of to 95 µm, the edge includes a straight portion smoothly connected to the edge round and along a thickness direction of the indium phosphide substrate.
The indium phosphide substrate according to claim 3, wherein each of the angles θ is 60°≤θ≤95° for all of the planes A where the distance from the main surface is 150 µm or more and 200 µm or less.
An indium phosphide substrate, wherein when planes A each parallel to a main surface are taken in the indium phosphide substrate, the indium phosphide substrate has an angle θ on a main surface side of 60°≤θ≤90° for each of the planes A where a distance from the main surface to each of the planes A is 100 µm or more and 200 µm or less, wherein the angle θ is formed by a plane B, the plane B including an intersection line of an edge of the indium phosphide substrate with each of the planes A and being tangent to the edge, and a plane of each of the planes A extending in an outside direction of the indium phosphide substrate, wherein in a cross section orthogonal to the edge, the indium phosphide substrate has an edge round at least on the main surface side, and the edge round on the main surface side has a radius of curvature Rf of 223 to 350 µm; and wherein the indium phosphide substrate has a diameter of 50.8 mm or less, a chamfered width from the edge on the main surface side of the wafer indium phosphide substrate is in the range of 50 to 95 µm, the edge includes a straight portion smoothly connected to the edge round and along a thickness direction of the indium phosphide substrate.
The indium phosphide substrate according to claim 5, wherein each of the angles θ is 60°≤θ≤90° for all of the planes A where the distance from the main surface is 150 µm or more and 200 µm or less.
An indium phosphide substrate, wherein when planes A each parallel to a main surface are taken in the indium phosphide substrate, the indium phosphide substrate has an angle θ on a main surface side of 80°≤θ≤110° for each of the planes A where a distance from the main surface to each of the planes A is 100 µm or more and 200 µm or less, wherein the angle θ is formed by a plane B, the plane B including an intersection line of an edge of the indium phosphide substrate with each of the planes A and being tangent to the edge, and a plane of each of the planes A extending in an outside direction of the indium phosphide substrate, wherein in a cross section orthogonal to the edge, the indium phosphide substrate has an edge round at least on the main surface side, and the edge round on the main surface side has a radius of curvature Rf of 223 to 350 µm; and wherein the indium phosphide substrate has a diameter of 76.2 mm or less, a chamfered width from the edge on the main surface side of the indium phosphide substrate is in the range of to 95 µm, the edge includes a straight portion smoothly connected to the edge round and along a thickness direction of the indium phosphide substrate.
The indium phosphide substrate according to claim 7, wherein each of the angles θ is 80°≤θ≤100° for all of the planes A where the distance from the main surface is 150 µm or more and 200 µm or less.
An indium phosphide substrate, wherein when planes A each parallel to a main surface are taken in the indium phosphide substrate, the indium phosphide substrate has an angle θ on a main surface side of 80°≤θ≤100° for each of the planes A where a B₂ distance from the main surface to each of the planes A is 100 µm or more and 200 µm or less, wherein the angle θ is formed by a plane B, the plane B including an intersection line of an edge of the indium phosphide substrate with each of the planes A and being tangent to the edge, and a plane of each of the planes A extending in an outside direction of the indium phosphide substrate, wherein in a cross section orthogonal to the edge, the indium phosphide substrate has an edge round at least on the main surface side, and the edge round on the main surface side has a radius of curvature Rf of 223 to 350 µm; and wherein the indium phosphide substrate has a diameter of 100 mm or less, a chamfered width from the edge on the main surface side of the indium phosphide substrate is in the range of to 95 µm, the edge includes a straight portion smoothly connected to the edge round and along a thickness direction of the indium phosphide substrate.
The indium phosphide substrate according to claim 9, wherein each of the angles θ is 80°≤θ≤95° for all of the planes A where the distance from the main surface is 150 µm or more and 200 µm or less.
Embodiments described in the patent, grouped by the materials and process steps they use.
1 material1 process step
Indium phosphide substrate with chamfered width 53 µm, edge round radius of curvature Rf 223 µm on main surface side. Angle θ values at planes A at various depths from main surface: 90.0°, 90.0°, 63.2°. No cracking observed during back lapping.
1 material1 process step
Indium phosphide substrate with chamfered width 73 µm, edge round radius of curvature Rf 338 µm on main surface side. Angle θ values: 99.5°, 91.5°, 91.5°. No cracking observed during back lapping.
1 material1 process step
Indium phosphide substrate with chamfered width 95 µm, edge round radius of curvature Rf 303 µm on main surface side. Angle θ values: 107.0°, 85.7°, 90.0°. No cracking observed during back lapping.
1 material1 process step
Indium phosphide substrate with chamfered width 53 µm, edge round radius of curvature Rf 230 µm on main surface side. Angle θ values: 96.9°, 93.9°, 90.0°. No cracking observed during back lapping.
1 material1 process step
Indium phosphide substrate with chamfered width 58 µm, edge round radius of curvature Rf 178 µm on main surface side (outside claimed range). Angle θ values: 115.5°, 108.6°, 95.3°. Cracking observed during back lapping.
1 material1 process step
Indium phosphide substrate with chamfered width unknown, edge round radius of curvature Rf 183 µm on main surface side (outside claimed range). Angle θ values: 131.0°, 103.8°, 96.0°. Cracking observed during back lapping.
Layer stacks claimed or described, ordered top of device to substrate.
indium phosphide substrate (general)
indium phosphide substrate (diameter ≤50.8 mm)
indium phosphide substrate (diameter ≤76.2 mm)
indium phosphide substrate (diameter ≤100 mm)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
edge round Rf Example 1 | 223 µm | InP |
edge round Rf Example 2 |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 4
Cited non-patent literature · 2
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,217,967 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross-sectional view of an indium phosphide substrate near a wafer edge; B₂
FIG. 2 is a schematic cross-sectional view of an indium phosphide substrate near a wafer edge;
FIG. 3 is a schematic cross-sectional view of an indium phosphide substrate near a wafer edge;
FIG. 4 is a schematic cross-sectional view of an indium phosphide substrate of Example near a wafer edge;
FIG. 5 is a schematic cross-sectional view for explaining a radius of curvature Rf of an edge round of an indium phosphide substrate; and
FIG. 6 is a schematic cross-sectional view of the vicinity of a wafer edge having tapered portions and a straight portion of an indium phosphide substrate.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An indium phosphide substrate, wherein when planes A each parallel to a main surface are taken in the indium phosphide substrate, the indium phosphide substrate has an angle θ on a main surface side of 0°<θ≤110° for each of the planes A where a distance from the main surface to each of the planes A is 100 µm or more and 200 µm or less, wherein the angle θ is formed by a plane B, the plane B including an intersection line of an edge of the indium phosphide substrate with each of the planes A and being tangent to the edge, and a plane of each of the planes A extending in an outside direction of the indium phosphide substrate, and wherein in a cross section orthogonal to the edge, the indium phosphide substrate has an edge round at least on the main surface side, and the edge round on the main surface side has a radius of curvature Rf of 223 to 350 µm, a chamfered width from the edge on the main surface side of the wafer indium phosphide substrate is in the range of 50 to 95 µm, the edge includes a straight portion smoothly connected to the edge round and along a thickness direction of the indium phosphide substrate.
The indium phosphide substrate according to claim 1, wherein each of the angles θ is 60°≤θ≤100° for all of the planes A where the distance from the main surface is 100 µm or more and 200 µm or less.
The indium phosphide substrate according to claim 1, wherein the radius of curvature Rf of the edge round on the main surface side is from 303 to 338 µm. ∗ ∗ ∗ ∗ ∗
An indium phosphide substrate, wherein when planes A each parallel to a main surface are taken in the indium phosphide substrate, the indium phosphide substrate has an angle θ on a main surface side of 0°<θ≤100° for each of the planes A where a distance from the main surface to each of the planes A is 150 µm or more and 200 µm or less, wherein the angle θ is formed by a plane B, the plane B including an intersection line of an edge of the indium phosphide substrate with each of the planes A and being tangent to the edge, and a plane of each of the planes A extending in an outside direction of the indium phosphide substrate, and wherein in a cross section orthogonal to the edge, the indium phosphide substrate has an edge round at least B₂ 1-continued Exam- Exam- Exam- Exam- Comp. Comp. ple 1 ple 2 ple 3 ple 4 1 2 53 73 95 53 390 335 188 355 58 405 270 460 59.0 52.4 50.2 59 14.8 12.9 21.3 23.3 53.1 22.4 12.5 11.8 223 338 303 230 178 183 Edge and 90.0 99.5 107.0 96.9 115.5 131.0 in Wafer Wafer Edge and 90.0 91.5 85.7 93.9 108.6 103.8 in Wafer Wafer Edge and 63.2 91.5 90.0 90.0 95.3 96.0 in Wafer on the main surface side, and the edge round on the main surface side has a radius of curvature Rf of 223 to 350 µm, a chamfered width from the edge on the main surface side of the indium phosphide substrate is in the range of to 95 µm, the edge includes a straight portion smoothly connected to the edge round and along a thickness direction of the indium phosphide substrate.
The indium phosphide substrate according to claim 3, wherein each of the angles θ is 60°≤θ≤95° for all of the planes A where the distance from the main surface is 150 µm or more and 200 µm or less.
An indium phosphide substrate, wherein when planes A each parallel to a main surface are taken in the indium phosphide substrate, the indium phosphide substrate has an angle θ on a main surface side of 60°≤θ≤90° for each of the planes A where a distance from the main surface to each of the planes A is 100 µm or more and 200 µm or less, wherein the angle θ is formed by a plane B, the plane B including an intersection line of an edge of the indium phosphide substrate with each of the planes A and being tangent to the edge, and a plane of each of the planes A extending in an outside direction of the indium phosphide substrate, wherein in a cross section orthogonal to the edge, the indium phosphide substrate has an edge round at least on the main surface side, and the edge round on the main surface side has a radius of curvature Rf of 223 to 350 µm; and wherein the indium phosphide substrate has a diameter of 50.8 mm or less, a chamfered width from the edge on the main surface side of the wafer indium phosphide substrate is in the range of 50 to 95 µm, the edge includes a straight portion smoothly connected to the edge round and along a thickness direction of the indium phosphide substrate.
The indium phosphide substrate according to claim 5, wherein each of the angles θ is 60°≤θ≤90° for all of the planes A where the distance from the main surface is 150 µm or more and 200 µm or less.
An indium phosphide substrate, wherein when planes A each parallel to a main surface are taken in the indium phosphide substrate, the indium phosphide substrate has an angle θ on a main surface side of 80°≤θ≤110° for each of the planes A where a distance from the main surface to each of the planes A is 100 µm or more and 200 µm or less, wherein the angle θ is formed by a plane B, the plane B including an intersection line of an edge of the indium phosphide substrate with each of the planes A and being tangent to the edge, and a plane of each of the planes A extending in an outside direction of the indium phosphide substrate, wherein in a cross section orthogonal to the edge, the indium phosphide substrate has an edge round at least on the main surface side, and the edge round on the main surface side has a radius of curvature Rf of 223 to 350 µm; and wherein the indium phosphide substrate has a diameter of 76.2 mm or less, a chamfered width from the edge on the main surface side of the indium phosphide substrate is in the range of to 95 µm, the edge includes a straight portion smoothly connected to the edge round and along a thickness direction of the indium phosphide substrate.
The indium phosphide substrate according to claim 7, wherein each of the angles θ is 80°≤θ≤100° for all of the planes A where the distance from the main surface is 150 µm or more and 200 µm or less.
An indium phosphide substrate, wherein when planes A each parallel to a main surface are taken in the indium phosphide substrate, the indium phosphide substrate has an angle θ on a main surface side of 80°≤θ≤100° for each of the planes A where a B₂ distance from the main surface to each of the planes A is 100 µm or more and 200 µm or less, wherein the angle θ is formed by a plane B, the plane B including an intersection line of an edge of the indium phosphide substrate with each of the planes A and being tangent to the edge, and a plane of each of the planes A extending in an outside direction of the indium phosphide substrate, wherein in a cross section orthogonal to the edge, the indium phosphide substrate has an edge round at least on the main surface side, and the edge round on the main surface side has a radius of curvature Rf of 223 to 350 µm; and wherein the indium phosphide substrate has a diameter of 100 mm or less, a chamfered width from the edge on the main surface side of the indium phosphide substrate is in the range of to 95 µm, the edge includes a straight portion smoothly connected to the edge round and along a thickness direction of the indium phosphide substrate.
The indium phosphide substrate according to claim 9, wherein each of the angles θ is 80°≤θ≤95° for all of the planes A where the distance from the main surface is 150 µm or more and 200 µm or less.
Embodiments described in the patent, grouped by the materials and process steps they use.
1 material1 process step
Indium phosphide substrate with chamfered width 53 µm, edge round radius of curvature Rf 223 µm on main surface side. Angle θ values at planes A at various depths from main surface: 90.0°, 90.0°, 63.2°. No cracking observed during back lapping.
1 material1 process step
Indium phosphide substrate with chamfered width 73 µm, edge round radius of curvature Rf 338 µm on main surface side. Angle θ values: 99.5°, 91.5°, 91.5°. No cracking observed during back lapping.
1 material1 process step
Indium phosphide substrate with chamfered width 95 µm, edge round radius of curvature Rf 303 µm on main surface side. Angle θ values: 107.0°, 85.7°, 90.0°. No cracking observed during back lapping.
1 material1 process step
Indium phosphide substrate with chamfered width 53 µm, edge round radius of curvature Rf 230 µm on main surface side. Angle θ values: 96.9°, 93.9°, 90.0°. No cracking observed during back lapping.
1 material1 process step
Indium phosphide substrate with chamfered width 58 µm, edge round radius of curvature Rf 178 µm on main surface side (outside claimed range). Angle θ values: 115.5°, 108.6°, 95.3°. Cracking observed during back lapping.
1 material1 process step
Indium phosphide substrate with chamfered width unknown, edge round radius of curvature Rf 183 µm on main surface side (outside claimed range). Angle θ values: 131.0°, 103.8°, 96.0°. Cracking observed during back lapping.
Layer stacks claimed or described, ordered top of device to substrate.
indium phosphide substrate (general)
indium phosphide substrate (diameter ≤50.8 mm)
indium phosphide substrate (diameter ≤76.2 mm)
indium phosphide substrate (diameter ≤100 mm)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
edge round Rf Example 1 | 223 µm | InP |
edge round Rf Example 2 |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 4
Cited non-patent literature · 2
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,217,967 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross-sectional view of an indium phosphide substrate near a wafer edge; B₂
FIG. 2 is a schematic cross-sectional view of an indium phosphide substrate near a wafer edge;
FIG. 3 is a schematic cross-sectional view of an indium phosphide substrate near a wafer edge;
FIG. 4 is a schematic cross-sectional view of an indium phosphide substrate of Example near a wafer edge;
FIG. 5 is a schematic cross-sectional view for explaining a radius of curvature Rf of an edge round of an indium phosphide substrate; and
FIG. 6 is a schematic cross-sectional view of the vicinity of a wafer edge having tapered portions and a straight portion of an indium phosphide substrate.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An indium phosphide substrate, wherein when planes A each parallel to a main surface are taken in the indium phosphide substrate, the indium phosphide substrate has an angle θ on a main surface side of 0°<θ≤110° for each of the planes A where a distance from the main surface to each of the planes A is 100 µm or more and 200 µm or less, wherein the angle θ is formed by a plane B, the plane B including an intersection line of an edge of the indium phosphide substrate with each of the planes A and being tangent to the edge, and a plane of each of the planes A extending in an outside direction of the indium phosphide substrate, and wherein in a cross section orthogonal to the edge, the indium phosphide substrate has an edge round at least on the main surface side, and the edge round on the main surface side has a radius of curvature Rf of 223 to 350 µm, a chamfered width from the edge on the main surface side of the wafer indium phosphide substrate is in the range of 50 to 95 µm, the edge includes a straight portion smoothly connected to the edge round and along a thickness direction of the indium phosphide substrate.
The indium phosphide substrate according to claim 1, wherein each of the angles θ is 60°≤θ≤100° for all of the planes A where the distance from the main surface is 100 µm or more and 200 µm or less.
The indium phosphide substrate according to claim 1, wherein the radius of curvature Rf of the edge round on the main surface side is from 303 to 338 µm. ∗ ∗ ∗ ∗ ∗
An indium phosphide substrate, wherein when planes A each parallel to a main surface are taken in the indium phosphide substrate, the indium phosphide substrate has an angle θ on a main surface side of 0°<θ≤100° for each of the planes A where a distance from the main surface to each of the planes A is 150 µm or more and 200 µm or less, wherein the angle θ is formed by a plane B, the plane B including an intersection line of an edge of the indium phosphide substrate with each of the planes A and being tangent to the edge, and a plane of each of the planes A extending in an outside direction of the indium phosphide substrate, and wherein in a cross section orthogonal to the edge, the indium phosphide substrate has an edge round at least B₂ 1-continued Exam- Exam- Exam- Exam- Comp. Comp. ple 1 ple 2 ple 3 ple 4 1 2 53 73 95 53 390 335 188 355 58 405 270 460 59.0 52.4 50.2 59 14.8 12.9 21.3 23.3 53.1 22.4 12.5 11.8 223 338 303 230 178 183 Edge and 90.0 99.5 107.0 96.9 115.5 131.0 in Wafer Wafer Edge and 90.0 91.5 85.7 93.9 108.6 103.8 in Wafer Wafer Edge and 63.2 91.5 90.0 90.0 95.3 96.0 in Wafer on the main surface side, and the edge round on the main surface side has a radius of curvature Rf of 223 to 350 µm, a chamfered width from the edge on the main surface side of the indium phosphide substrate is in the range of to 95 µm, the edge includes a straight portion smoothly connected to the edge round and along a thickness direction of the indium phosphide substrate.
The indium phosphide substrate according to claim 3, wherein each of the angles θ is 60°≤θ≤95° for all of the planes A where the distance from the main surface is 150 µm or more and 200 µm or less.
An indium phosphide substrate, wherein when planes A each parallel to a main surface are taken in the indium phosphide substrate, the indium phosphide substrate has an angle θ on a main surface side of 60°≤θ≤90° for each of the planes A where a distance from the main surface to each of the planes A is 100 µm or more and 200 µm or less, wherein the angle θ is formed by a plane B, the plane B including an intersection line of an edge of the indium phosphide substrate with each of the planes A and being tangent to the edge, and a plane of each of the planes A extending in an outside direction of the indium phosphide substrate, wherein in a cross section orthogonal to the edge, the indium phosphide substrate has an edge round at least on the main surface side, and the edge round on the main surface side has a radius of curvature Rf of 223 to 350 µm; and wherein the indium phosphide substrate has a diameter of 50.8 mm or less, a chamfered width from the edge on the main surface side of the wafer indium phosphide substrate is in the range of 50 to 95 µm, the edge includes a straight portion smoothly connected to the edge round and along a thickness direction of the indium phosphide substrate.
The indium phosphide substrate according to claim 5, wherein each of the angles θ is 60°≤θ≤90° for all of the planes A where the distance from the main surface is 150 µm or more and 200 µm or less.
An indium phosphide substrate, wherein when planes A each parallel to a main surface are taken in the indium phosphide substrate, the indium phosphide substrate has an angle θ on a main surface side of 80°≤θ≤110° for each of the planes A where a distance from the main surface to each of the planes A is 100 µm or more and 200 µm or less, wherein the angle θ is formed by a plane B, the plane B including an intersection line of an edge of the indium phosphide substrate with each of the planes A and being tangent to the edge, and a plane of each of the planes A extending in an outside direction of the indium phosphide substrate, wherein in a cross section orthogonal to the edge, the indium phosphide substrate has an edge round at least on the main surface side, and the edge round on the main surface side has a radius of curvature Rf of 223 to 350 µm; and wherein the indium phosphide substrate has a diameter of 76.2 mm or less, a chamfered width from the edge on the main surface side of the indium phosphide substrate is in the range of to 95 µm, the edge includes a straight portion smoothly connected to the edge round and along a thickness direction of the indium phosphide substrate.
The indium phosphide substrate according to claim 7, wherein each of the angles θ is 80°≤θ≤100° for all of the planes A where the distance from the main surface is 150 µm or more and 200 µm or less.
An indium phosphide substrate, wherein when planes A each parallel to a main surface are taken in the indium phosphide substrate, the indium phosphide substrate has an angle θ on a main surface side of 80°≤θ≤100° for each of the planes A where a B₂ distance from the main surface to each of the planes A is 100 µm or more and 200 µm or less, wherein the angle θ is formed by a plane B, the plane B including an intersection line of an edge of the indium phosphide substrate with each of the planes A and being tangent to the edge, and a plane of each of the planes A extending in an outside direction of the indium phosphide substrate, wherein in a cross section orthogonal to the edge, the indium phosphide substrate has an edge round at least on the main surface side, and the edge round on the main surface side has a radius of curvature Rf of 223 to 350 µm; and wherein the indium phosphide substrate has a diameter of 100 mm or less, a chamfered width from the edge on the main surface side of the indium phosphide substrate is in the range of to 95 µm, the edge includes a straight portion smoothly connected to the edge round and along a thickness direction of the indium phosphide substrate.
The indium phosphide substrate according to claim 9, wherein each of the angles θ is 80°≤θ≤95° for all of the planes A where the distance from the main surface is 150 µm or more and 200 µm or less.
Embodiments described in the patent, grouped by the materials and process steps they use.
1 material1 process step
Indium phosphide substrate with chamfered width 53 µm, edge round radius of curvature Rf 223 µm on main surface side. Angle θ values at planes A at various depths from main surface: 90.0°, 90.0°, 63.2°. No cracking observed during back lapping.
1 material1 process step
Indium phosphide substrate with chamfered width 73 µm, edge round radius of curvature Rf 338 µm on main surface side. Angle θ values: 99.5°, 91.5°, 91.5°. No cracking observed during back lapping.
1 material1 process step
Indium phosphide substrate with chamfered width 95 µm, edge round radius of curvature Rf 303 µm on main surface side. Angle θ values: 107.0°, 85.7°, 90.0°. No cracking observed during back lapping.
1 material1 process step
Indium phosphide substrate with chamfered width 53 µm, edge round radius of curvature Rf 230 µm on main surface side. Angle θ values: 96.9°, 93.9°, 90.0°. No cracking observed during back lapping.
1 material1 process step
Indium phosphide substrate with chamfered width 58 µm, edge round radius of curvature Rf 178 µm on main surface side (outside claimed range). Angle θ values: 115.5°, 108.6°, 95.3°. Cracking observed during back lapping.
1 material1 process step
Indium phosphide substrate with chamfered width unknown, edge round radius of curvature Rf 183 µm on main surface side (outside claimed range). Angle θ values: 131.0°, 103.8°, 96.0°. Cracking observed during back lapping.
Layer stacks claimed or described, ordered top of device to substrate.
indium phosphide substrate (general)
indium phosphide substrate (diameter ≤50.8 mm)
indium phosphide substrate (diameter ≤76.2 mm)
indium phosphide substrate (diameter ≤100 mm)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
edge round Rf Example 1 | 223 µm | InP |
edge round Rf Example 2 |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 4
Cited non-patent literature · 2
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,217,967 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross-sectional view of an indium phosphide substrate near a wafer edge; B₂
FIG. 2 is a schematic cross-sectional view of an indium phosphide substrate near a wafer edge;
FIG. 3 is a schematic cross-sectional view of an indium phosphide substrate near a wafer edge;
FIG. 4 is a schematic cross-sectional view of an indium phosphide substrate of Example near a wafer edge;
FIG. 5 is a schematic cross-sectional view for explaining a radius of curvature Rf of an edge round of an indium phosphide substrate; and
FIG. 6 is a schematic cross-sectional view of the vicinity of a wafer edge having tapered portions and a straight portion of an indium phosphide substrate.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An indium phosphide substrate, wherein when planes A each parallel to a main surface are taken in the indium phosphide substrate, the indium phosphide substrate has an angle θ on a main surface side of 0°<θ≤110° for each of the planes A where a distance from the main surface to each of the planes A is 100 µm or more and 200 µm or less, wherein the angle θ is formed by a plane B, the plane B including an intersection line of an edge of the indium phosphide substrate with each of the planes A and being tangent to the edge, and a plane of each of the planes A extending in an outside direction of the indium phosphide substrate, and wherein in a cross section orthogonal to the edge, the indium phosphide substrate has an edge round at least on the main surface side, and the edge round on the main surface side has a radius of curvature Rf of 223 to 350 µm, a chamfered width from the edge on the main surface side of the wafer indium phosphide substrate is in the range of 50 to 95 µm, the edge includes a straight portion smoothly connected to the edge round and along a thickness direction of the indium phosphide substrate.
The indium phosphide substrate according to claim 1, wherein each of the angles θ is 60°≤θ≤100° for all of the planes A where the distance from the main surface is 100 µm or more and 200 µm or less.
The indium phosphide substrate according to claim 1, wherein the radius of curvature Rf of the edge round on the main surface side is from 303 to 338 µm. ∗ ∗ ∗ ∗ ∗
An indium phosphide substrate, wherein when planes A each parallel to a main surface are taken in the indium phosphide substrate, the indium phosphide substrate has an angle θ on a main surface side of 0°<θ≤100° for each of the planes A where a distance from the main surface to each of the planes A is 150 µm or more and 200 µm or less, wherein the angle θ is formed by a plane B, the plane B including an intersection line of an edge of the indium phosphide substrate with each of the planes A and being tangent to the edge, and a plane of each of the planes A extending in an outside direction of the indium phosphide substrate, and wherein in a cross section orthogonal to the edge, the indium phosphide substrate has an edge round at least B₂ 1-continued Exam- Exam- Exam- Exam- Comp. Comp. ple 1 ple 2 ple 3 ple 4 1 2 53 73 95 53 390 335 188 355 58 405 270 460 59.0 52.4 50.2 59 14.8 12.9 21.3 23.3 53.1 22.4 12.5 11.8 223 338 303 230 178 183 Edge and 90.0 99.5 107.0 96.9 115.5 131.0 in Wafer Wafer Edge and 90.0 91.5 85.7 93.9 108.6 103.8 in Wafer Wafer Edge and 63.2 91.5 90.0 90.0 95.3 96.0 in Wafer on the main surface side, and the edge round on the main surface side has a radius of curvature Rf of 223 to 350 µm, a chamfered width from the edge on the main surface side of the indium phosphide substrate is in the range of to 95 µm, the edge includes a straight portion smoothly connected to the edge round and along a thickness direction of the indium phosphide substrate.
The indium phosphide substrate according to claim 3, wherein each of the angles θ is 60°≤θ≤95° for all of the planes A where the distance from the main surface is 150 µm or more and 200 µm or less.
An indium phosphide substrate, wherein when planes A each parallel to a main surface are taken in the indium phosphide substrate, the indium phosphide substrate has an angle θ on a main surface side of 60°≤θ≤90° for each of the planes A where a distance from the main surface to each of the planes A is 100 µm or more and 200 µm or less, wherein the angle θ is formed by a plane B, the plane B including an intersection line of an edge of the indium phosphide substrate with each of the planes A and being tangent to the edge, and a plane of each of the planes A extending in an outside direction of the indium phosphide substrate, wherein in a cross section orthogonal to the edge, the indium phosphide substrate has an edge round at least on the main surface side, and the edge round on the main surface side has a radius of curvature Rf of 223 to 350 µm; and wherein the indium phosphide substrate has a diameter of 50.8 mm or less, a chamfered width from the edge on the main surface side of the wafer indium phosphide substrate is in the range of 50 to 95 µm, the edge includes a straight portion smoothly connected to the edge round and along a thickness direction of the indium phosphide substrate.
The indium phosphide substrate according to claim 5, wherein each of the angles θ is 60°≤θ≤90° for all of the planes A where the distance from the main surface is 150 µm or more and 200 µm or less.
An indium phosphide substrate, wherein when planes A each parallel to a main surface are taken in the indium phosphide substrate, the indium phosphide substrate has an angle θ on a main surface side of 80°≤θ≤110° for each of the planes A where a distance from the main surface to each of the planes A is 100 µm or more and 200 µm or less, wherein the angle θ is formed by a plane B, the plane B including an intersection line of an edge of the indium phosphide substrate with each of the planes A and being tangent to the edge, and a plane of each of the planes A extending in an outside direction of the indium phosphide substrate, wherein in a cross section orthogonal to the edge, the indium phosphide substrate has an edge round at least on the main surface side, and the edge round on the main surface side has a radius of curvature Rf of 223 to 350 µm; and wherein the indium phosphide substrate has a diameter of 76.2 mm or less, a chamfered width from the edge on the main surface side of the indium phosphide substrate is in the range of to 95 µm, the edge includes a straight portion smoothly connected to the edge round and along a thickness direction of the indium phosphide substrate.
The indium phosphide substrate according to claim 7, wherein each of the angles θ is 80°≤θ≤100° for all of the planes A where the distance from the main surface is 150 µm or more and 200 µm or less.
An indium phosphide substrate, wherein when planes A each parallel to a main surface are taken in the indium phosphide substrate, the indium phosphide substrate has an angle θ on a main surface side of 80°≤θ≤100° for each of the planes A where a B₂ distance from the main surface to each of the planes A is 100 µm or more and 200 µm or less, wherein the angle θ is formed by a plane B, the plane B including an intersection line of an edge of the indium phosphide substrate with each of the planes A and being tangent to the edge, and a plane of each of the planes A extending in an outside direction of the indium phosphide substrate, wherein in a cross section orthogonal to the edge, the indium phosphide substrate has an edge round at least on the main surface side, and the edge round on the main surface side has a radius of curvature Rf of 223 to 350 µm; and wherein the indium phosphide substrate has a diameter of 100 mm or less, a chamfered width from the edge on the main surface side of the indium phosphide substrate is in the range of to 95 µm, the edge includes a straight portion smoothly connected to the edge round and along a thickness direction of the indium phosphide substrate.
The indium phosphide substrate according to claim 9, wherein each of the angles θ is 80°≤θ≤95° for all of the planes A where the distance from the main surface is 150 µm or more and 200 µm or less.
Embodiments described in the patent, grouped by the materials and process steps they use.
1 material1 process step
Indium phosphide substrate with chamfered width 53 µm, edge round radius of curvature Rf 223 µm on main surface side. Angle θ values at planes A at various depths from main surface: 90.0°, 90.0°, 63.2°. No cracking observed during back lapping.
1 material1 process step
Indium phosphide substrate with chamfered width 73 µm, edge round radius of curvature Rf 338 µm on main surface side. Angle θ values: 99.5°, 91.5°, 91.5°. No cracking observed during back lapping.
1 material1 process step
Indium phosphide substrate with chamfered width 95 µm, edge round radius of curvature Rf 303 µm on main surface side. Angle θ values: 107.0°, 85.7°, 90.0°. No cracking observed during back lapping.
1 material1 process step
Indium phosphide substrate with chamfered width 53 µm, edge round radius of curvature Rf 230 µm on main surface side. Angle θ values: 96.9°, 93.9°, 90.0°. No cracking observed during back lapping.
1 material1 process step
Indium phosphide substrate with chamfered width 58 µm, edge round radius of curvature Rf 178 µm on main surface side (outside claimed range). Angle θ values: 115.5°, 108.6°, 95.3°. Cracking observed during back lapping.
1 material1 process step
Indium phosphide substrate with chamfered width unknown, edge round radius of curvature Rf 183 µm on main surface side (outside claimed range). Angle θ values: 131.0°, 103.8°, 96.0°. Cracking observed during back lapping.
Layer stacks claimed or described, ordered top of device to substrate.
indium phosphide substrate (general)
indium phosphide substrate (diameter ≤50.8 mm)
indium phosphide substrate (diameter ≤76.2 mm)
indium phosphide substrate (diameter ≤100 mm)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
edge round Rf Example 1 | 223 µm | InP |
edge round Rf Example 2 |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 4
Cited non-patent literature · 2
Related documents with shared materials, methods, properties, or citations.
| 338 µm |
InP |
edge round Rf Example 3 | 303 µm | InP |
edge round Rf Example 4 | 230 µm | InP |
edge round Rf Comparative Example 1 | 178 µm | InP |
edge round Rf Comparative Example 2 | 183 µm | InP |
edge round Rf claimed range (claims 1, 3, 5, 7, 9) | 223–350 µm | InP |
edge round Rf claimed range (claim 11) | 303–338 µm | InP |
Thickness | 49–151 mm | — |
Thickness | 49–101 mm | — |
Thickness | 300–900 µm | — |
Thickness | 300–700 µm | — |
Thickness | 200–350 µm | — |
Thickness | 223–338 µm | — |
Thickness | 50–150 µm | — |
Thickness | ≤ 300 µm | — |
Thickness | ≤ 200 µm | — |
Thickness | ≥ 900 µm | — |
Thickness | ≥ 350 µm | — |
Thickness | 50–95 µm | — |
| 338 µm |
InP |
edge round Rf Example 3 | 303 µm | InP |
edge round Rf Example 4 | 230 µm | InP |
edge round Rf Comparative Example 1 | 178 µm | InP |
edge round Rf Comparative Example 2 | 183 µm | InP |
edge round Rf claimed range (claims 1, 3, 5, 7, 9) | 223–350 µm | InP |
edge round Rf claimed range (claim 11) | 303–338 µm | InP |
Thickness | 49–151 mm | — |
Thickness | 49–101 mm | — |
Thickness | 300–900 µm | — |
Thickness | 300–700 µm | — |
Thickness | 200–350 µm | — |
Thickness | 223–338 µm | — |
Thickness | 50–150 µm | — |
Thickness | ≤ 300 µm | — |
Thickness | ≤ 200 µm | — |
Thickness | ≥ 900 µm | — |
Thickness | ≥ 350 µm | — |
Thickness | 50–95 µm | — |
| 338 µm |
InP |
edge round Rf Example 3 | 303 µm | InP |
edge round Rf Example 4 | 230 µm | InP |
edge round Rf Comparative Example 1 | 178 µm | InP |
edge round Rf Comparative Example 2 | 183 µm | InP |
edge round Rf claimed range (claims 1, 3, 5, 7, 9) | 223–350 µm | InP |
edge round Rf claimed range (claim 11) | 303–338 µm | InP |
Thickness | 49–151 mm | — |
Thickness | 49–101 mm | — |
Thickness | 300–900 µm | — |
Thickness | 300–700 µm | — |
Thickness | 200–350 µm | — |
Thickness | 223–338 µm | — |
Thickness | 50–150 µm | — |
Thickness | ≤ 300 µm | — |
Thickness | ≤ 200 µm | — |
Thickness | ≥ 900 µm | — |
Thickness | ≥ 350 µm | — |
Thickness | 50–95 µm | — |
| 338 µm |
InP |
edge round Rf Example 3 | 303 µm | InP |
edge round Rf Example 4 | 230 µm | InP |
edge round Rf Comparative Example 1 | 178 µm | InP |
edge round Rf Comparative Example 2 | 183 µm | InP |
edge round Rf claimed range (claims 1, 3, 5, 7, 9) | 223–350 µm | InP |
edge round Rf claimed range (claim 11) | 303–338 µm | InP |
Thickness | 49–151 mm | — |
Thickness | 49–101 mm | — |
Thickness | 300–900 µm | — |
Thickness | 300–700 µm | — |
Thickness | 200–350 µm | — |
Thickness | 223–338 µm | — |
Thickness | 50–150 µm | — |
Thickness | ≤ 300 µm | — |
Thickness | ≤ 200 µm | — |
Thickness | ≥ 900 µm | — |
Thickness | ≥ 350 µm | — |
Thickness | 50–95 µm | — |