Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1
FIG. 1 shows a ring laser in accordance with the present disclosure;
FIG. 2
FIG. 2 shows a Microscope image of the ring laser in accordance with the present disclosure.
Claims
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
3 independent · 14 dependent
1
Independentmonolithically integrated InP tunable ring laser
A tunable ring laser having a ring cavity, wherein the ring cavity comprises: a ring resonator having a waveguide; a phase modulator having a waveguide; a power coupler coupled to the ring resonator; and a reflector, to reflect an anti-clock-wise mode or reflect a clock-wise mode, such that a propagation direction of a mode of the tunable ring laser is unidirectional, wherein a cross section of the waveguide of at least one of the ring resonator or the phase modulator is config-ured as an electro-refractive modulator such that the tunable ring laser is tunable by applying a reverse bias voltage to at least one of the waveguide of the ring resonator or the waveguide of the phase modulator respectively.
2
Dependent← claim 1InPmonolithically integrated InP tunable ring laser
The tunable ring laser of claim 1, wherein the tunable ring laser is a monolithically integrated, indium phosphide (InP), tunable ring laser.
9
Independentmonolithically integrated InP tunable ring laser
A method of operating a tunable ring laser, wherein the method comprises: coupling, by a power coupler, a first light wave and a second light wave in a ring resonator; guiding, by the ring resonator and a phase modulator, a first light wave and a second light wave via at least one of a waveguide of the ring resonator or a waveguide of the phase modulator respectively, wherein a cross sec-tion of the waveguide of at least one of the ring resonator or the phase modulator respectively is con-figured as an electro-refractive modulator, applying, to at least one of the waveguide of the ring resonator or the waveguide of the phase modulator respectively, a reverse bias voltage to tune the tunable ring laser, and reflecting, by a reflector, an anti-clock-wise mode or a clock-wise mode, such that a propagation direction of a mode of the tunable ring laser is unidirectional.
10
Dependent← claim 9
The method of claim 9, wherein the ring resonator is a first ring resonator and the ring cavity comprises a second ring resonator.
11
Dependent← claim 9
The method of claim 9, wherein the cavity comprises a semiconductor optical amplifier, and wherein the method further comprises: amplifying, by the semiconductor optical amplifier, a light wave in the cavity.
13
Independentmonolithically integrated InP tunable ring laser
A method of fabricating a tunable ring laser having a ring cavity, the method comprising: at least partly providing a ring resonator having a wave-guide; at least partly providing a phase modulator having a waveguide; at least partly providing a power coupler coupled to the resonator; and at least partly providing a reflector to reflect an anti-clock-wise mode or a clock-wise mode, such that a propaga-tion direction of a mode of the tunable ring laser is unidirectional, wherein a cross section of the waveguide of at least one of the ring resonator or the phase modulator is config-ured as an electro-refractive modulator such that the tunable ring laser is tunable by applying a reverse bias voltage to at least one of the waveguide of the ring resonator or the waveguide of the phase modulator respectively.
14
Dependent← claim 13InP
The method of claim 13, comprising at least one of: using an indium phosphide (InP) integration technology, or using a silicon technology.
15
Dependent← claim 13InPmonolithically integrated InP tunable ring laser
The method of claim 13, wherein the tunable ring laser is a monolithically integrated, indium phosphide (InP), tunable ring laser.
Device structures
Layer stacks claimed or described, ordered top of device to substrate.
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1
FIG. 1 shows a ring laser in accordance with the present disclosure;
FIG. 2
FIG. 2 shows a Microscope image of the ring laser in accordance with the present disclosure.
Claims
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
3 independent · 14 dependent
1
Independentmonolithically integrated InP tunable ring laser
A tunable ring laser having a ring cavity, wherein the ring cavity comprises: a ring resonator having a waveguide; a phase modulator having a waveguide; a power coupler coupled to the ring resonator; and a reflector, to reflect an anti-clock-wise mode or reflect a clock-wise mode, such that a propagation direction of a mode of the tunable ring laser is unidirectional, wherein a cross section of the waveguide of at least one of the ring resonator or the phase modulator is config-ured as an electro-refractive modulator such that the tunable ring laser is tunable by applying a reverse bias voltage to at least one of the waveguide of the ring resonator or the waveguide of the phase modulator respectively.
2
Dependent← claim 1InPmonolithically integrated InP tunable ring laser
The tunable ring laser of claim 1, wherein the tunable ring laser is a monolithically integrated, indium phosphide (InP), tunable ring laser.
9
Independentmonolithically integrated InP tunable ring laser
A method of operating a tunable ring laser, wherein the method comprises: coupling, by a power coupler, a first light wave and a second light wave in a ring resonator; guiding, by the ring resonator and a phase modulator, a first light wave and a second light wave via at least one of a waveguide of the ring resonator or a waveguide of the phase modulator respectively, wherein a cross sec-tion of the waveguide of at least one of the ring resonator or the phase modulator respectively is con-figured as an electro-refractive modulator, applying, to at least one of the waveguide of the ring resonator or the waveguide of the phase modulator respectively, a reverse bias voltage to tune the tunable ring laser, and reflecting, by a reflector, an anti-clock-wise mode or a clock-wise mode, such that a propagation direction of a mode of the tunable ring laser is unidirectional.
10
Dependent← claim 9
The method of claim 9, wherein the ring resonator is a first ring resonator and the ring cavity comprises a second ring resonator.
11
Dependent← claim 9
The method of claim 9, wherein the cavity comprises a semiconductor optical amplifier, and wherein the method further comprises: amplifying, by the semiconductor optical amplifier, a light wave in the cavity.
13
Independentmonolithically integrated InP tunable ring laser
A method of fabricating a tunable ring laser having a ring cavity, the method comprising: at least partly providing a ring resonator having a wave-guide; at least partly providing a phase modulator having a waveguide; at least partly providing a power coupler coupled to the resonator; and at least partly providing a reflector to reflect an anti-clock-wise mode or a clock-wise mode, such that a propaga-tion direction of a mode of the tunable ring laser is unidirectional, wherein a cross section of the waveguide of at least one of the ring resonator or the phase modulator is config-ured as an electro-refractive modulator such that the tunable ring laser is tunable by applying a reverse bias voltage to at least one of the waveguide of the ring resonator or the waveguide of the phase modulator respectively.
14
Dependent← claim 13InP
The method of claim 13, comprising at least one of: using an indium phosphide (InP) integration technology, or using a silicon technology.
15
Dependent← claim 13InPmonolithically integrated InP tunable ring laser
The method of claim 13, wherein the tunable ring laser is a monolithically integrated, indium phosphide (InP), tunable ring laser.
Device structures
Layer stacks claimed or described, ordered top of device to substrate.
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1
FIG. 1 shows a ring laser in accordance with the present disclosure;
FIG. 2
FIG. 2 shows a Microscope image of the ring laser in accordance with the present disclosure.
Claims
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
3 independent · 14 dependent
1
Independentmonolithically integrated InP tunable ring laser
A tunable ring laser having a ring cavity, wherein the ring cavity comprises: a ring resonator having a waveguide; a phase modulator having a waveguide; a power coupler coupled to the ring resonator; and a reflector, to reflect an anti-clock-wise mode or reflect a clock-wise mode, such that a propagation direction of a mode of the tunable ring laser is unidirectional, wherein a cross section of the waveguide of at least one of the ring resonator or the phase modulator is config-ured as an electro-refractive modulator such that the tunable ring laser is tunable by applying a reverse bias voltage to at least one of the waveguide of the ring resonator or the waveguide of the phase modulator respectively.
2
Dependent← claim 1InPmonolithically integrated InP tunable ring laser
The tunable ring laser of claim 1, wherein the tunable ring laser is a monolithically integrated, indium phosphide (InP), tunable ring laser.
9
Independentmonolithically integrated InP tunable ring laser
A method of operating a tunable ring laser, wherein the method comprises: coupling, by a power coupler, a first light wave and a second light wave in a ring resonator; guiding, by the ring resonator and a phase modulator, a first light wave and a second light wave via at least one of a waveguide of the ring resonator or a waveguide of the phase modulator respectively, wherein a cross sec-tion of the waveguide of at least one of the ring resonator or the phase modulator respectively is con-figured as an electro-refractive modulator, applying, to at least one of the waveguide of the ring resonator or the waveguide of the phase modulator respectively, a reverse bias voltage to tune the tunable ring laser, and reflecting, by a reflector, an anti-clock-wise mode or a clock-wise mode, such that a propagation direction of a mode of the tunable ring laser is unidirectional.
10
Dependent← claim 9
The method of claim 9, wherein the ring resonator is a first ring resonator and the ring cavity comprises a second ring resonator.
11
Dependent← claim 9
The method of claim 9, wherein the cavity comprises a semiconductor optical amplifier, and wherein the method further comprises: amplifying, by the semiconductor optical amplifier, a light wave in the cavity.
13
Independentmonolithically integrated InP tunable ring laser
A method of fabricating a tunable ring laser having a ring cavity, the method comprising: at least partly providing a ring resonator having a wave-guide; at least partly providing a phase modulator having a waveguide; at least partly providing a power coupler coupled to the resonator; and at least partly providing a reflector to reflect an anti-clock-wise mode or a clock-wise mode, such that a propaga-tion direction of a mode of the tunable ring laser is unidirectional, wherein a cross section of the waveguide of at least one of the ring resonator or the phase modulator is config-ured as an electro-refractive modulator such that the tunable ring laser is tunable by applying a reverse bias voltage to at least one of the waveguide of the ring resonator or the waveguide of the phase modulator respectively.
14
Dependent← claim 13InP
The method of claim 13, comprising at least one of: using an indium phosphide (InP) integration technology, or using a silicon technology.
15
Dependent← claim 13InPmonolithically integrated InP tunable ring laser
The method of claim 13, wherein the tunable ring laser is a monolithically integrated, indium phosphide (InP), tunable ring laser.
Device structures
Layer stacks claimed or described, ordered top of device to substrate.
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1
FIG. 1 shows a ring laser in accordance with the present disclosure;
FIG. 2
FIG. 2 shows a Microscope image of the ring laser in accordance with the present disclosure.
Claims
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
3 independent · 14 dependent
1
Independentmonolithically integrated InP tunable ring laser
A tunable ring laser having a ring cavity, wherein the ring cavity comprises: a ring resonator having a waveguide; a phase modulator having a waveguide; a power coupler coupled to the ring resonator; and a reflector, to reflect an anti-clock-wise mode or reflect a clock-wise mode, such that a propagation direction of a mode of the tunable ring laser is unidirectional, wherein a cross section of the waveguide of at least one of the ring resonator or the phase modulator is config-ured as an electro-refractive modulator such that the tunable ring laser is tunable by applying a reverse bias voltage to at least one of the waveguide of the ring resonator or the waveguide of the phase modulator respectively.
2
Dependent← claim 1InPmonolithically integrated InP tunable ring laser
The tunable ring laser of claim 1, wherein the tunable ring laser is a monolithically integrated, indium phosphide (InP), tunable ring laser.
9
Independentmonolithically integrated InP tunable ring laser
A method of operating a tunable ring laser, wherein the method comprises: coupling, by a power coupler, a first light wave and a second light wave in a ring resonator; guiding, by the ring resonator and a phase modulator, a first light wave and a second light wave via at least one of a waveguide of the ring resonator or a waveguide of the phase modulator respectively, wherein a cross sec-tion of the waveguide of at least one of the ring resonator or the phase modulator respectively is con-figured as an electro-refractive modulator, applying, to at least one of the waveguide of the ring resonator or the waveguide of the phase modulator respectively, a reverse bias voltage to tune the tunable ring laser, and reflecting, by a reflector, an anti-clock-wise mode or a clock-wise mode, such that a propagation direction of a mode of the tunable ring laser is unidirectional.
10
Dependent← claim 9
The method of claim 9, wherein the ring resonator is a first ring resonator and the ring cavity comprises a second ring resonator.
11
Dependent← claim 9
The method of claim 9, wherein the cavity comprises a semiconductor optical amplifier, and wherein the method further comprises: amplifying, by the semiconductor optical amplifier, a light wave in the cavity.
13
Independentmonolithically integrated InP tunable ring laser
A method of fabricating a tunable ring laser having a ring cavity, the method comprising: at least partly providing a ring resonator having a wave-guide; at least partly providing a phase modulator having a waveguide; at least partly providing a power coupler coupled to the resonator; and at least partly providing a reflector to reflect an anti-clock-wise mode or a clock-wise mode, such that a propaga-tion direction of a mode of the tunable ring laser is unidirectional, wherein a cross section of the waveguide of at least one of the ring resonator or the phase modulator is config-ured as an electro-refractive modulator such that the tunable ring laser is tunable by applying a reverse bias voltage to at least one of the waveguide of the ring resonator or the waveguide of the phase modulator respectively.
14
Dependent← claim 13InP
The method of claim 13, comprising at least one of: using an indium phosphide (InP) integration technology, or using a silicon technology.
15
Dependent← claim 13InPmonolithically integrated InP tunable ring laser
The method of claim 13, wherein the tunable ring laser is a monolithically integrated, indium phosphide (InP), tunable ring laser.
Device structures
Layer stacks claimed or described, ordered top of device to substrate.
PIN Diode Heterostructure For Electro-Refractive Modulator
—
—
Voltage
≤ 5 V
—
Thickness
1500–1650 nm
—
Thickness
≥ 30 nm
—
US 2003/0219045 A12003/0219045 A1 11/2003 Orenstein et al.
US 2009/0046748 A12009/0046748 A1 * 2/2009 Kato....................... H01S 5/026examiner
US 2009/0059973 A12009/0059973 A1 * 3/2009 Suzuki.................. H01S 5/1032examiner
US 2010/0266232 A12010/0266232 A1 * 10/2010 Lipson.................... G02F 1/025examiner
US 2011/0310918 A12011/0310918 A1 * 12/2011 Yoon..................... H01S 5/0265examiner
JP 2008268276 AJP 2008268276 A 11/2008
JP 2009049064 AJP 2009049064 A 3/2009
JP 2013093627 AJP 2013093627 A 5/2013
JP 2016139741 AJP 2016139741 A 8/2016
JP 2018010047 AJP 2018010047 A 1/2018
KR 1020060094224 AKR 1020060094224 A 8/2006
Cited non-patent literature · 5
Tuning of a widely tunable monolithically inte- grated InP laser for optical coherence tomography. Pajkovic et al., “Tuning of a widely tunable monolithically inte- grated InP laser for optical coherence tomography”, Proceedings of SPIE, ISSN 0277-786X, SPIE, US, vol. 10939, Mar. 1, 2019 (Mar. 1, 2019), pp. 1093912-1-1093912-8 (Year: 2019).
International Search Report and Written Opinion dated Nov. 20, 2020, for PCT Application No. PCT/EP2020/074473.
Unidirectionality of semiconductor ring lasers: theory and experiment. Cho et al., “Unidirectionality of semiconductor ring lasers: theory and experiment”, 2002 IEEE 18th, International Semiconductor Laser Conference, Garmisch, Germany, Sep. 29-Oct. 3, 2002; IEEE International Semiconductor Laser Conference, New York, NY: IEEE, US, vol. Con F. 18, Sep. 29, 2002 (Sep. 29, 2002), pp. 69-70, XP010609167, DOI: 10.1109/ISLC.2002.1041122, ISBN: 978-0- 7803-7598-7.10.1109/ISLC.2002.1041122
Electro-Optic Tuning of a Monolithically Inte- grated Widely Tuneable InP Laser With Free-Running and Stabi- lized Operation. Andreou et al., “Electro-Optic Tuning of a Monolithically Inte- grated Widely Tuneable InP Laser With Free-Running and Stabi- lized Operation”, Journal of Lightwave Technology, IEEE, USA, vol. 38, No. 7, Nov. 8, 2019 (Nov. 8, 2019), pp. 1887-1894, XP011782174, ISSN: 0733-8724, DOI: 10.1109/JLT.2019. 2952466. Japanese Office Action dated May 7, 2024 for Japanese Patent Application No. 2022-513565.10.1109/JLT.2019
Novel Widely Tunable Monolithically Integrated Laser Source. Latkowski et al., “Novel Widely Tunable Monolithically Integrated Laser Source”, IEEE Photonics Journal, vol. 7, No. 6, Dec. 1, 2015. Japanese Office Action Notice of Refusal dated Oct. 24, 2024 for Japanese Patent Application No. 2022-513565.
PIN Diode Heterostructure For Electro-Refractive Modulator
—
—
Voltage
≤ 5 V
—
Thickness
1500–1650 nm
—
Thickness
≥ 30 nm
—
US 2003/0219045 A12003/0219045 A1 11/2003 Orenstein et al.
US 2009/0046748 A12009/0046748 A1 * 2/2009 Kato....................... H01S 5/026examiner
US 2009/0059973 A12009/0059973 A1 * 3/2009 Suzuki.................. H01S 5/1032examiner
US 2010/0266232 A12010/0266232 A1 * 10/2010 Lipson.................... G02F 1/025examiner
US 2011/0310918 A12011/0310918 A1 * 12/2011 Yoon..................... H01S 5/0265examiner
JP 2008268276 AJP 2008268276 A 11/2008
JP 2009049064 AJP 2009049064 A 3/2009
JP 2013093627 AJP 2013093627 A 5/2013
JP 2016139741 AJP 2016139741 A 8/2016
JP 2018010047 AJP 2018010047 A 1/2018
KR 1020060094224 AKR 1020060094224 A 8/2006
Cited non-patent literature · 5
Tuning of a widely tunable monolithically inte- grated InP laser for optical coherence tomography. Pajkovic et al., “Tuning of a widely tunable monolithically inte- grated InP laser for optical coherence tomography”, Proceedings of SPIE, ISSN 0277-786X, SPIE, US, vol. 10939, Mar. 1, 2019 (Mar. 1, 2019), pp. 1093912-1-1093912-8 (Year: 2019).
International Search Report and Written Opinion dated Nov. 20, 2020, for PCT Application No. PCT/EP2020/074473.
Unidirectionality of semiconductor ring lasers: theory and experiment. Cho et al., “Unidirectionality of semiconductor ring lasers: theory and experiment”, 2002 IEEE 18th, International Semiconductor Laser Conference, Garmisch, Germany, Sep. 29-Oct. 3, 2002; IEEE International Semiconductor Laser Conference, New York, NY: IEEE, US, vol. Con F. 18, Sep. 29, 2002 (Sep. 29, 2002), pp. 69-70, XP010609167, DOI: 10.1109/ISLC.2002.1041122, ISBN: 978-0- 7803-7598-7.10.1109/ISLC.2002.1041122
Electro-Optic Tuning of a Monolithically Inte- grated Widely Tuneable InP Laser With Free-Running and Stabi- lized Operation. Andreou et al., “Electro-Optic Tuning of a Monolithically Inte- grated Widely Tuneable InP Laser With Free-Running and Stabi- lized Operation”, Journal of Lightwave Technology, IEEE, USA, vol. 38, No. 7, Nov. 8, 2019 (Nov. 8, 2019), pp. 1887-1894, XP011782174, ISSN: 0733-8724, DOI: 10.1109/JLT.2019. 2952466. Japanese Office Action dated May 7, 2024 for Japanese Patent Application No. 2022-513565.10.1109/JLT.2019
Novel Widely Tunable Monolithically Integrated Laser Source. Latkowski et al., “Novel Widely Tunable Monolithically Integrated Laser Source”, IEEE Photonics Journal, vol. 7, No. 6, Dec. 1, 2015. Japanese Office Action Notice of Refusal dated Oct. 24, 2024 for Japanese Patent Application No. 2022-513565.
PIN Diode Heterostructure For Electro-Refractive Modulator
—
—
Voltage
≤ 5 V
—
Thickness
1500–1650 nm
—
Thickness
≥ 30 nm
—
US 2003/0219045 A12003/0219045 A1 11/2003 Orenstein et al.
US 2009/0046748 A12009/0046748 A1 * 2/2009 Kato....................... H01S 5/026examiner
US 2009/0059973 A12009/0059973 A1 * 3/2009 Suzuki.................. H01S 5/1032examiner
US 2010/0266232 A12010/0266232 A1 * 10/2010 Lipson.................... G02F 1/025examiner
US 2011/0310918 A12011/0310918 A1 * 12/2011 Yoon..................... H01S 5/0265examiner
JP 2008268276 AJP 2008268276 A 11/2008
JP 2009049064 AJP 2009049064 A 3/2009
JP 2013093627 AJP 2013093627 A 5/2013
JP 2016139741 AJP 2016139741 A 8/2016
JP 2018010047 AJP 2018010047 A 1/2018
KR 1020060094224 AKR 1020060094224 A 8/2006
Cited non-patent literature · 5
Tuning of a widely tunable monolithically inte- grated InP laser for optical coherence tomography. Pajkovic et al., “Tuning of a widely tunable monolithically inte- grated InP laser for optical coherence tomography”, Proceedings of SPIE, ISSN 0277-786X, SPIE, US, vol. 10939, Mar. 1, 2019 (Mar. 1, 2019), pp. 1093912-1-1093912-8 (Year: 2019).
International Search Report and Written Opinion dated Nov. 20, 2020, for PCT Application No. PCT/EP2020/074473.
Unidirectionality of semiconductor ring lasers: theory and experiment. Cho et al., “Unidirectionality of semiconductor ring lasers: theory and experiment”, 2002 IEEE 18th, International Semiconductor Laser Conference, Garmisch, Germany, Sep. 29-Oct. 3, 2002; IEEE International Semiconductor Laser Conference, New York, NY: IEEE, US, vol. Con F. 18, Sep. 29, 2002 (Sep. 29, 2002), pp. 69-70, XP010609167, DOI: 10.1109/ISLC.2002.1041122, ISBN: 978-0- 7803-7598-7.10.1109/ISLC.2002.1041122
Electro-Optic Tuning of a Monolithically Inte- grated Widely Tuneable InP Laser With Free-Running and Stabi- lized Operation. Andreou et al., “Electro-Optic Tuning of a Monolithically Inte- grated Widely Tuneable InP Laser With Free-Running and Stabi- lized Operation”, Journal of Lightwave Technology, IEEE, USA, vol. 38, No. 7, Nov. 8, 2019 (Nov. 8, 2019), pp. 1887-1894, XP011782174, ISSN: 0733-8724, DOI: 10.1109/JLT.2019. 2952466. Japanese Office Action dated May 7, 2024 for Japanese Patent Application No. 2022-513565.10.1109/JLT.2019
Novel Widely Tunable Monolithically Integrated Laser Source. Latkowski et al., “Novel Widely Tunable Monolithically Integrated Laser Source”, IEEE Photonics Journal, vol. 7, No. 6, Dec. 1, 2015. Japanese Office Action Notice of Refusal dated Oct. 24, 2024 for Japanese Patent Application No. 2022-513565.
PIN Diode Heterostructure For Electro-Refractive Modulator
—
—
Voltage
≤ 5 V
—
Thickness
1500–1650 nm
—
Thickness
≥ 30 nm
—
US 2003/0219045 A12003/0219045 A1 11/2003 Orenstein et al.
US 2009/0046748 A12009/0046748 A1 * 2/2009 Kato....................... H01S 5/026examiner
US 2009/0059973 A12009/0059973 A1 * 3/2009 Suzuki.................. H01S 5/1032examiner
US 2010/0266232 A12010/0266232 A1 * 10/2010 Lipson.................... G02F 1/025examiner
US 2011/0310918 A12011/0310918 A1 * 12/2011 Yoon..................... H01S 5/0265examiner
JP 2008268276 AJP 2008268276 A 11/2008
JP 2009049064 AJP 2009049064 A 3/2009
JP 2013093627 AJP 2013093627 A 5/2013
JP 2016139741 AJP 2016139741 A 8/2016
JP 2018010047 AJP 2018010047 A 1/2018
KR 1020060094224 AKR 1020060094224 A 8/2006
Cited non-patent literature · 5
Tuning of a widely tunable monolithically inte- grated InP laser for optical coherence tomography. Pajkovic et al., “Tuning of a widely tunable monolithically inte- grated InP laser for optical coherence tomography”, Proceedings of SPIE, ISSN 0277-786X, SPIE, US, vol. 10939, Mar. 1, 2019 (Mar. 1, 2019), pp. 1093912-1-1093912-8 (Year: 2019).
International Search Report and Written Opinion dated Nov. 20, 2020, for PCT Application No. PCT/EP2020/074473.
Unidirectionality of semiconductor ring lasers: theory and experiment. Cho et al., “Unidirectionality of semiconductor ring lasers: theory and experiment”, 2002 IEEE 18th, International Semiconductor Laser Conference, Garmisch, Germany, Sep. 29-Oct. 3, 2002; IEEE International Semiconductor Laser Conference, New York, NY: IEEE, US, vol. Con F. 18, Sep. 29, 2002 (Sep. 29, 2002), pp. 69-70, XP010609167, DOI: 10.1109/ISLC.2002.1041122, ISBN: 978-0- 7803-7598-7.10.1109/ISLC.2002.1041122
Electro-Optic Tuning of a Monolithically Inte- grated Widely Tuneable InP Laser With Free-Running and Stabi- lized Operation. Andreou et al., “Electro-Optic Tuning of a Monolithically Inte- grated Widely Tuneable InP Laser With Free-Running and Stabi- lized Operation”, Journal of Lightwave Technology, IEEE, USA, vol. 38, No. 7, Nov. 8, 2019 (Nov. 8, 2019), pp. 1887-1894, XP011782174, ISSN: 0733-8724, DOI: 10.1109/JLT.2019. 2952466. Japanese Office Action dated May 7, 2024 for Japanese Patent Application No. 2022-513565.10.1109/JLT.2019
Novel Widely Tunable Monolithically Integrated Laser Source. Latkowski et al., “Novel Widely Tunable Monolithically Integrated Laser Source”, IEEE Photonics Journal, vol. 7, No. 6, Dec. 1, 2015. Japanese Office Action Notice of Refusal dated Oct. 24, 2024 for Japanese Patent Application No. 2022-513565.