Patent
US 12,065,759 B2INDIUM PHOSPHIDE SUBSTRATE
Shunsuke Oka, Kenji Suzuki
JX METALS CORPORATION, Tokyo (JP)·Aug. 20, 2024·US
Copyright © 2026 Matter42. All rights reserved.
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Atlas literature
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US 12,065,759 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross-sectional view of an indium phosphide substrate near a wafer edge;
FIG. 2 is a schematic cross-sectional view of an indium phosphide substrate near a wafer edge;
FIG. 3 is a schematic cross-sectional view of an indium phosphide substrate near a wafer edge;
FIG. 4 is a schematic cross-sectional view for explaining edge rounds of an indium phosphide substrate; and
FIG. 5 is a schematic cross-sectional view of an indium phosphide substrate of Example near a wafer edge.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An indium phosphide substrate, wherein when planes A each parallel to a main surface are taken in a wafer, the phosphide substrate has an angle θ on the main surface side of 0°<θ≤120° for all of the planes A where a distance from the main surface is 100 µm or more to 200 µm or less, wherein the angle θ is formed by a plane B, the plane B including an intersection line of an wafer edge with each of the planes A and being tangent to the wafer edge, and an plane of each of the planes A extending in a wafer outside direction; wherein in a cross section orthogonal to the wafer edge, the indium phosphide substrate has edge rounds on the main surface side and a surface side opposite to the main surface; wherein a chamfered width Xf from the wafer edge on the main surface side is 50 µm or more to 130 µm or less; wherein a chamfered width Xb from the wafer edge on the surface side opposite to the main surface is 150 µm or more to 400 µm or less; and wherein the indium phosphide substrate has a thickness of 330 µm or more to 700 µm or less.
The indium phosphide substrate according to claim 1, wherein the angle θ is 60°≤θ≤120° for all of the planes A where the distance from the main surface is 100 µm or more to 200 µm or less.
The indium phosphide substrate according to claim 1, wherein a ratio of the chamfered width Xb from the wafer edge on the surface side opposite to the main surface to the chamfered width Xf from the wafer edge on the main surface side: Xb/Xf is 1.25 or more to 8.0 or less.
An indium phosphide substrate, wherein when planes A each parallel to a main surface are taken in a wafer, the phosphide substrate has an angle θ on the main surface side of 60°<θ≤110° for all of the planes A where a distance from the main surface is 100 µm or more to 200 µm or less, wherein the angle θ is formed by a plane B, the plane B including an intersection line of an wafer edge with each of the planes A and being tangent to the wafer edge, and an plane of each of the planes A extending in a wafer outside direction; wherein in a cross section orthogonal to the wafer edge, the indium phosphide substrate has edge rounds on the main surface side and a surface side opposite to the main surface; wherein a chamfered width Xf from the wafer edge on the main surface side is 80 µm or more to 110 µm or less; wherein a chamfered width Xb from the wafer edge on the surface side opposite to the main surface is 150 µm or more to 210 µm or less; and wherein the indium phosphide substrate has a diameter of 50.8 mm or less and a thickness of 330 µm or more to 380 µm or less.
An indium phosphide substrate, wherein when planes A each parallel to a main surface are taken in a wafer, the phosphide substrate has an angle θ on the main surface side of 90°≤0≤120° for all of the planes A where a distance from the main surface is 100 µm or more to 200 µm or less, wherein the angle θ is formed by a plane B, the plane B including an intersection line of a wafer edge with each of the planes A and being tangent to the wafer edge, and an plane of each of the planes A extending in a wafer outside direction, wherein in a cross section orthogonal to the wafer edge, the indium phosphide substrate has edge rounds on the main surface side and a surface side opposite to the main surface; wherein a chamfered width Xf from the wafer edge on the main surface side is 80 µm or more to 110 µm or less; wherein a chamfered width Xb from the wafer edge on the surface side opposite to the main surface is 180 µm or more to 230 µm or less; and wherein the indium phosphide substrate has a diameter of 50.8 mm or less and a thickness of 480 µm or more to 530 µm or less.
An indium phosphide substrate, wherein when planes A each parallel to a main surface are taken in a wafer, the phosphide substrate has an angle θ on the main surface side of 90°≤θ≤120° for all of the planes A where a distance from the main surface is 100 µm or more to 200 µm or less, wherein the angle θ is formed by a plane B, the plane B including an intersection line of an wafer edge with each of the planes A and being tangent to the wafer edge, and an plane of each of the planes A extending in a wafer outside direction, wherein in a cross section orthogonal to the wafer edge, the indium phosphide substrate has edge rounds on the main surface side and a surface side opposite to the main surface; wherein a chamfered width X from the wafer edge on the main surface side is 90 µm or more to 130 µm or less; wherein a chamfered width Xb from the wafer edge on the surface side opposite to the main surface is 270 µm or more to 350 µm or less; and wherein the indium phosphide substrate has a diameter of 76.2 mm or less and a thickness of 570 µm or more to 630 µm or less.
Layer stacks claimed or described, ordered top of device to substrate.
indium phosphide substrate (claim 1 geometry)
indium phosphide substrate (claim 3 geometry, ≤50.8 mm diameter, 330–380 µm thickness)
indium phosphide substrate (claim 4 geometry, ≤50.8 mm diameter, 480–530 µm thickness)
indium phosphide substrate (claim 5 geometry, ≤76.2 mm diameter, 570–630 µm thickness)
Materials described outside the worked examples.
indium phosphide
InP
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 49–151 mm | — |
Thickness |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 7
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,065,759 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross-sectional view of an indium phosphide substrate near a wafer edge;
FIG. 2 is a schematic cross-sectional view of an indium phosphide substrate near a wafer edge;
FIG. 3 is a schematic cross-sectional view of an indium phosphide substrate near a wafer edge;
FIG. 4 is a schematic cross-sectional view for explaining edge rounds of an indium phosphide substrate; and
FIG. 5 is a schematic cross-sectional view of an indium phosphide substrate of Example near a wafer edge.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An indium phosphide substrate, wherein when planes A each parallel to a main surface are taken in a wafer, the phosphide substrate has an angle θ on the main surface side of 0°<θ≤120° for all of the planes A where a distance from the main surface is 100 µm or more to 200 µm or less, wherein the angle θ is formed by a plane B, the plane B including an intersection line of an wafer edge with each of the planes A and being tangent to the wafer edge, and an plane of each of the planes A extending in a wafer outside direction; wherein in a cross section orthogonal to the wafer edge, the indium phosphide substrate has edge rounds on the main surface side and a surface side opposite to the main surface; wherein a chamfered width Xf from the wafer edge on the main surface side is 50 µm or more to 130 µm or less; wherein a chamfered width Xb from the wafer edge on the surface side opposite to the main surface is 150 µm or more to 400 µm or less; and wherein the indium phosphide substrate has a thickness of 330 µm or more to 700 µm or less.
The indium phosphide substrate according to claim 1, wherein the angle θ is 60°≤θ≤120° for all of the planes A where the distance from the main surface is 100 µm or more to 200 µm or less.
The indium phosphide substrate according to claim 1, wherein a ratio of the chamfered width Xb from the wafer edge on the surface side opposite to the main surface to the chamfered width Xf from the wafer edge on the main surface side: Xb/Xf is 1.25 or more to 8.0 or less.
An indium phosphide substrate, wherein when planes A each parallel to a main surface are taken in a wafer, the phosphide substrate has an angle θ on the main surface side of 60°<θ≤110° for all of the planes A where a distance from the main surface is 100 µm or more to 200 µm or less, wherein the angle θ is formed by a plane B, the plane B including an intersection line of an wafer edge with each of the planes A and being tangent to the wafer edge, and an plane of each of the planes A extending in a wafer outside direction; wherein in a cross section orthogonal to the wafer edge, the indium phosphide substrate has edge rounds on the main surface side and a surface side opposite to the main surface; wherein a chamfered width Xf from the wafer edge on the main surface side is 80 µm or more to 110 µm or less; wherein a chamfered width Xb from the wafer edge on the surface side opposite to the main surface is 150 µm or more to 210 µm or less; and wherein the indium phosphide substrate has a diameter of 50.8 mm or less and a thickness of 330 µm or more to 380 µm or less.
An indium phosphide substrate, wherein when planes A each parallel to a main surface are taken in a wafer, the phosphide substrate has an angle θ on the main surface side of 90°≤0≤120° for all of the planes A where a distance from the main surface is 100 µm or more to 200 µm or less, wherein the angle θ is formed by a plane B, the plane B including an intersection line of a wafer edge with each of the planes A and being tangent to the wafer edge, and an plane of each of the planes A extending in a wafer outside direction, wherein in a cross section orthogonal to the wafer edge, the indium phosphide substrate has edge rounds on the main surface side and a surface side opposite to the main surface; wherein a chamfered width Xf from the wafer edge on the main surface side is 80 µm or more to 110 µm or less; wherein a chamfered width Xb from the wafer edge on the surface side opposite to the main surface is 180 µm or more to 230 µm or less; and wherein the indium phosphide substrate has a diameter of 50.8 mm or less and a thickness of 480 µm or more to 530 µm or less.
An indium phosphide substrate, wherein when planes A each parallel to a main surface are taken in a wafer, the phosphide substrate has an angle θ on the main surface side of 90°≤θ≤120° for all of the planes A where a distance from the main surface is 100 µm or more to 200 µm or less, wherein the angle θ is formed by a plane B, the plane B including an intersection line of an wafer edge with each of the planes A and being tangent to the wafer edge, and an plane of each of the planes A extending in a wafer outside direction, wherein in a cross section orthogonal to the wafer edge, the indium phosphide substrate has edge rounds on the main surface side and a surface side opposite to the main surface; wherein a chamfered width X from the wafer edge on the main surface side is 90 µm or more to 130 µm or less; wherein a chamfered width Xb from the wafer edge on the surface side opposite to the main surface is 270 µm or more to 350 µm or less; and wherein the indium phosphide substrate has a diameter of 76.2 mm or less and a thickness of 570 µm or more to 630 µm or less.
Layer stacks claimed or described, ordered top of device to substrate.
indium phosphide substrate (claim 1 geometry)
indium phosphide substrate (claim 3 geometry, ≤50.8 mm diameter, 330–380 µm thickness)
indium phosphide substrate (claim 4 geometry, ≤50.8 mm diameter, 480–530 µm thickness)
indium phosphide substrate (claim 5 geometry, ≤76.2 mm diameter, 570–630 µm thickness)
Materials described outside the worked examples.
indium phosphide
InP
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 49–151 mm | — |
Thickness |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 7
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,065,759 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross-sectional view of an indium phosphide substrate near a wafer edge;
FIG. 2 is a schematic cross-sectional view of an indium phosphide substrate near a wafer edge;
FIG. 3 is a schematic cross-sectional view of an indium phosphide substrate near a wafer edge;
FIG. 4 is a schematic cross-sectional view for explaining edge rounds of an indium phosphide substrate; and
FIG. 5 is a schematic cross-sectional view of an indium phosphide substrate of Example near a wafer edge.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An indium phosphide substrate, wherein when planes A each parallel to a main surface are taken in a wafer, the phosphide substrate has an angle θ on the main surface side of 0°<θ≤120° for all of the planes A where a distance from the main surface is 100 µm or more to 200 µm or less, wherein the angle θ is formed by a plane B, the plane B including an intersection line of an wafer edge with each of the planes A and being tangent to the wafer edge, and an plane of each of the planes A extending in a wafer outside direction; wherein in a cross section orthogonal to the wafer edge, the indium phosphide substrate has edge rounds on the main surface side and a surface side opposite to the main surface; wherein a chamfered width Xf from the wafer edge on the main surface side is 50 µm or more to 130 µm or less; wherein a chamfered width Xb from the wafer edge on the surface side opposite to the main surface is 150 µm or more to 400 µm or less; and wherein the indium phosphide substrate has a thickness of 330 µm or more to 700 µm or less.
The indium phosphide substrate according to claim 1, wherein the angle θ is 60°≤θ≤120° for all of the planes A where the distance from the main surface is 100 µm or more to 200 µm or less.
The indium phosphide substrate according to claim 1, wherein a ratio of the chamfered width Xb from the wafer edge on the surface side opposite to the main surface to the chamfered width Xf from the wafer edge on the main surface side: Xb/Xf is 1.25 or more to 8.0 or less.
An indium phosphide substrate, wherein when planes A each parallel to a main surface are taken in a wafer, the phosphide substrate has an angle θ on the main surface side of 60°<θ≤110° for all of the planes A where a distance from the main surface is 100 µm or more to 200 µm or less, wherein the angle θ is formed by a plane B, the plane B including an intersection line of an wafer edge with each of the planes A and being tangent to the wafer edge, and an plane of each of the planes A extending in a wafer outside direction; wherein in a cross section orthogonal to the wafer edge, the indium phosphide substrate has edge rounds on the main surface side and a surface side opposite to the main surface; wherein a chamfered width Xf from the wafer edge on the main surface side is 80 µm or more to 110 µm or less; wherein a chamfered width Xb from the wafer edge on the surface side opposite to the main surface is 150 µm or more to 210 µm or less; and wherein the indium phosphide substrate has a diameter of 50.8 mm or less and a thickness of 330 µm or more to 380 µm or less.
An indium phosphide substrate, wherein when planes A each parallel to a main surface are taken in a wafer, the phosphide substrate has an angle θ on the main surface side of 90°≤0≤120° for all of the planes A where a distance from the main surface is 100 µm or more to 200 µm or less, wherein the angle θ is formed by a plane B, the plane B including an intersection line of a wafer edge with each of the planes A and being tangent to the wafer edge, and an plane of each of the planes A extending in a wafer outside direction, wherein in a cross section orthogonal to the wafer edge, the indium phosphide substrate has edge rounds on the main surface side and a surface side opposite to the main surface; wherein a chamfered width Xf from the wafer edge on the main surface side is 80 µm or more to 110 µm or less; wherein a chamfered width Xb from the wafer edge on the surface side opposite to the main surface is 180 µm or more to 230 µm or less; and wherein the indium phosphide substrate has a diameter of 50.8 mm or less and a thickness of 480 µm or more to 530 µm or less.
An indium phosphide substrate, wherein when planes A each parallel to a main surface are taken in a wafer, the phosphide substrate has an angle θ on the main surface side of 90°≤θ≤120° for all of the planes A where a distance from the main surface is 100 µm or more to 200 µm or less, wherein the angle θ is formed by a plane B, the plane B including an intersection line of an wafer edge with each of the planes A and being tangent to the wafer edge, and an plane of each of the planes A extending in a wafer outside direction, wherein in a cross section orthogonal to the wafer edge, the indium phosphide substrate has edge rounds on the main surface side and a surface side opposite to the main surface; wherein a chamfered width X from the wafer edge on the main surface side is 90 µm or more to 130 µm or less; wherein a chamfered width Xb from the wafer edge on the surface side opposite to the main surface is 270 µm or more to 350 µm or less; and wherein the indium phosphide substrate has a diameter of 76.2 mm or less and a thickness of 570 µm or more to 630 µm or less.
Layer stacks claimed or described, ordered top of device to substrate.
indium phosphide substrate (claim 1 geometry)
indium phosphide substrate (claim 3 geometry, ≤50.8 mm diameter, 330–380 µm thickness)
indium phosphide substrate (claim 4 geometry, ≤50.8 mm diameter, 480–530 µm thickness)
indium phosphide substrate (claim 5 geometry, ≤76.2 mm diameter, 570–630 µm thickness)
Materials described outside the worked examples.
indium phosphide
InP
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 49–151 mm | — |
Thickness |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 7
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,065,759 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross-sectional view of an indium phosphide substrate near a wafer edge;
FIG. 2 is a schematic cross-sectional view of an indium phosphide substrate near a wafer edge;
FIG. 3 is a schematic cross-sectional view of an indium phosphide substrate near a wafer edge;
FIG. 4 is a schematic cross-sectional view for explaining edge rounds of an indium phosphide substrate; and
FIG. 5 is a schematic cross-sectional view of an indium phosphide substrate of Example near a wafer edge.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An indium phosphide substrate, wherein when planes A each parallel to a main surface are taken in a wafer, the phosphide substrate has an angle θ on the main surface side of 0°<θ≤120° for all of the planes A where a distance from the main surface is 100 µm or more to 200 µm or less, wherein the angle θ is formed by a plane B, the plane B including an intersection line of an wafer edge with each of the planes A and being tangent to the wafer edge, and an plane of each of the planes A extending in a wafer outside direction; wherein in a cross section orthogonal to the wafer edge, the indium phosphide substrate has edge rounds on the main surface side and a surface side opposite to the main surface; wherein a chamfered width Xf from the wafer edge on the main surface side is 50 µm or more to 130 µm or less; wherein a chamfered width Xb from the wafer edge on the surface side opposite to the main surface is 150 µm or more to 400 µm or less; and wherein the indium phosphide substrate has a thickness of 330 µm or more to 700 µm or less.
The indium phosphide substrate according to claim 1, wherein the angle θ is 60°≤θ≤120° for all of the planes A where the distance from the main surface is 100 µm or more to 200 µm or less.
The indium phosphide substrate according to claim 1, wherein a ratio of the chamfered width Xb from the wafer edge on the surface side opposite to the main surface to the chamfered width Xf from the wafer edge on the main surface side: Xb/Xf is 1.25 or more to 8.0 or less.
An indium phosphide substrate, wherein when planes A each parallel to a main surface are taken in a wafer, the phosphide substrate has an angle θ on the main surface side of 60°<θ≤110° for all of the planes A where a distance from the main surface is 100 µm or more to 200 µm or less, wherein the angle θ is formed by a plane B, the plane B including an intersection line of an wafer edge with each of the planes A and being tangent to the wafer edge, and an plane of each of the planes A extending in a wafer outside direction; wherein in a cross section orthogonal to the wafer edge, the indium phosphide substrate has edge rounds on the main surface side and a surface side opposite to the main surface; wherein a chamfered width Xf from the wafer edge on the main surface side is 80 µm or more to 110 µm or less; wherein a chamfered width Xb from the wafer edge on the surface side opposite to the main surface is 150 µm or more to 210 µm or less; and wherein the indium phosphide substrate has a diameter of 50.8 mm or less and a thickness of 330 µm or more to 380 µm or less.
An indium phosphide substrate, wherein when planes A each parallel to a main surface are taken in a wafer, the phosphide substrate has an angle θ on the main surface side of 90°≤0≤120° for all of the planes A where a distance from the main surface is 100 µm or more to 200 µm or less, wherein the angle θ is formed by a plane B, the plane B including an intersection line of a wafer edge with each of the planes A and being tangent to the wafer edge, and an plane of each of the planes A extending in a wafer outside direction, wherein in a cross section orthogonal to the wafer edge, the indium phosphide substrate has edge rounds on the main surface side and a surface side opposite to the main surface; wherein a chamfered width Xf from the wafer edge on the main surface side is 80 µm or more to 110 µm or less; wherein a chamfered width Xb from the wafer edge on the surface side opposite to the main surface is 180 µm or more to 230 µm or less; and wherein the indium phosphide substrate has a diameter of 50.8 mm or less and a thickness of 480 µm or more to 530 µm or less.
An indium phosphide substrate, wherein when planes A each parallel to a main surface are taken in a wafer, the phosphide substrate has an angle θ on the main surface side of 90°≤θ≤120° for all of the planes A where a distance from the main surface is 100 µm or more to 200 µm or less, wherein the angle θ is formed by a plane B, the plane B including an intersection line of an wafer edge with each of the planes A and being tangent to the wafer edge, and an plane of each of the planes A extending in a wafer outside direction, wherein in a cross section orthogonal to the wafer edge, the indium phosphide substrate has edge rounds on the main surface side and a surface side opposite to the main surface; wherein a chamfered width X from the wafer edge on the main surface side is 90 µm or more to 130 µm or less; wherein a chamfered width Xb from the wafer edge on the surface side opposite to the main surface is 270 µm or more to 350 µm or less; and wherein the indium phosphide substrate has a diameter of 76.2 mm or less and a thickness of 570 µm or more to 630 µm or less.
Layer stacks claimed or described, ordered top of device to substrate.
indium phosphide substrate (claim 1 geometry)
indium phosphide substrate (claim 3 geometry, ≤50.8 mm diameter, 330–380 µm thickness)
indium phosphide substrate (claim 4 geometry, ≤50.8 mm diameter, 480–530 µm thickness)
indium phosphide substrate (claim 5 geometry, ≤76.2 mm diameter, 570–630 µm thickness)
Materials described outside the worked examples.
indium phosphide
InP
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 49–151 mm | — |
Thickness |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 7
Related documents with shared materials, methods, properties, or citations.
| — |
Thickness | 300–900 µm | — |
Thickness | 300–700 µm | — |
Thickness | 150–320 µm | — |
Thickness | 320–580 µm | — |
Thickness | ≤ 300 µm | — |
Thickness | ≥ 900 µm | — |
Thickness | 1–2 µm | — |
Cited non-patent literature · 2
| — |
Thickness | 300–900 µm | — |
Thickness | 300–700 µm | — |
Thickness | 150–320 µm | — |
Thickness | 320–580 µm | — |
Thickness | ≤ 300 µm | — |
Thickness | ≥ 900 µm | — |
Thickness | 1–2 µm | — |
Cited non-patent literature · 2
| — |
Thickness | 300–900 µm | — |
Thickness | 300–700 µm | — |
Thickness | 150–320 µm | — |
Thickness | 320–580 µm | — |
Thickness | ≤ 300 µm | — |
Thickness | ≥ 900 µm | — |
Thickness | 1–2 µm | — |
Cited non-patent literature · 2
| — |
Thickness | 300–900 µm | — |
Thickness | 300–700 µm | — |
Thickness | 150–320 µm | — |
Thickness | 320–580 µm | — |
Thickness | ≤ 300 µm | — |
Thickness | ≥ 900 µm | — |
Thickness | 1–2 µm | — |
Cited non-patent literature · 2