INP-BASED MONOLITHIC INTEGRATED CHAOTIC SEMICONDUCTOR LASER CHIP CAPABLE OF FEEDING BACK RANDOMLY DIFFUSED LIGHT

Mingjiang Zhang

Patent

Atlas literature

Patent

US 11,152,763

INP-BASED MONOLITHIC INTEGRATED CHAOTIC SEMICONDUCTOR LASER CHIP CAPABLE OF FEEDING BACK RANDOMLY DIFFUSED LIGHT

Mingjiang Zhang

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

1 independent · 4 dependent

1
IndependentInGaAsPInPInGaAsPInGaAsdoped particlesInP-based monolithic integrated chaotic semiconductor laser chip
An InP-based monolithic integrated chaotic semiconductor laser chip capable of feeding back randomly diﬀused light, characterized in comprising: an N-type substrate; an InGaAsP lower conﬁnement layer epitaxially grown on the N-type substrate; an undoped InGaAsP multiple quantum well active region layer epitaxially grown on the InGaAsP lower conﬁnement layer; an InGaAsP upper conﬁnement layer epitaxially grown on the undoped InGaAsP multiple quantum well active region layer; a P-type cover layer heavily doped with InP, being ridge-shaped, and epitaxially grown in the middle of the InGaAsP upper conﬁnement layer; a P-type contact layer heavily doped with InGaAs located on the P-type cover layer heavily doped with InP; a P+ electrode layer made on the P-type contact layer heavily doped with InGaAs, and divided into four segments with three isolation grooves from left to right along an arrangement alignment of the P+ electrode layer; and an N + electrode layer made on a back surface of the N-type substrate; wherein a ﬁrst segment, a second segment, and a fourth segment of the P+ electrode layer, from left to right, respectively correspond to a left distributed feedback (DFB) semiconductor laser, a bidirectional semiconductor optical ampliﬁer (S O A), and a right DFB semiconductor laser; a third segment of the P+ electrode layer, from left to right, sequentially corresponds to a left passive optical waveguide region, a doped passive optical waveguide region, and a right passive optical waveguide region; the InGaAsP upper conﬁnement layer in the regions corresponding to the left DFB semiconductor laser and the right DFB semiconductor laser engraves distributed feedback Bragg gratings; and the doped passive optical waveguide region is doped with other doped particles.
1. 2
  Dependent← claim 1InGaAsPInPInP-based monolithic integrated chaotic semiconductor laser chip
  The I nP-based monolithic integrated chaotic semiconductor laser chip capable of feeding back randomly diﬀused light of claim 1, characterized in that, the left DFB semiconductor laser and the right DFB semiconductor laser respectively have a length of 500 m, providing optical signals for the entire chip, and materials of their corresponding DFB Bragg gratings respectively are I nP and I nGaAsP, further the DFB Bragg gratings respectively have a thickness of 50 to 100 nm and a period of 290 nm, corresponding to a lasing peak of a 1550 nm band; and the bidirectional S O A has a length of 200 m.
2. 3
  Dependent← claim 1InGaAsPInP-based monolithic integrated chaotic semiconductor laser chip
  The I nP-based monolithic integrated chaotic semiconductor laser chip capable of feeding back randomly diﬀused light of claim 1 or 2, characterized in that, the doped passive optical waveguide region is doped with a certain concentration of the doped particles, the layer where the doped particles are located corresponds to the undoped I nGaAsP multiple quantum well active region layer; and the doped particles may generate strong random backward scattered light on unit length when continuous laser passes through the doped passive optical waveguide region, to provide a random optical feedback perturbation to the left DFB semiconductor laser and the right DFB semiconductor laser.
3. 4
  Dependent← claim 1InP-based monolithic integrated chaotic semiconductor laser chip
  The I nP-based monolithic integrated chaotic semiconductor laser chip capable of feeding back randomly diﬀused light of claim 1 or 2, characterized in that, there is a parameter mismatch, and a detuning frequency of 10 GHz to 15 GHz corresponding to center wavelengths, and an output power deviation of less than 70% between the left DFB semiconductor laser and the right DFB semiconductor laser.
4. 5
  Dependent← claim 1InP-based monolithic integrated chaotic semiconductor laser chip
  The I nP-based monolithic integrated chaotic semiconductor laser chip capable of feeding back randomly diﬀused light of claim 1 or 2, characterized in that, a right side of the left DFB semiconductor laser is connected with a left side of the bidirectional S O A, a right side of the bidirectional S O A is connected with a left side of the left passive optical waveguide, a right side of the left passive optical waveguide is connected with a left side of the doped passive optical waveguide region, a right side of the doped passive optical waveguide region is connected with a left side of the right passive optical waveguide region, and a right side of the right passive optical waveguide region is connected with a left side of the right DFB semiconductor laser, thus an optical mutual injection between the two DFB semiconductor lasers is realized.

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

InP-based monolithic integrated chaotic semiconductor laser chip

P+ electrode layer (4 segments)P+ electrode layer (4 segments)

InGaAsP-type contact layer

InPP-type cover layer (ridge-shaped)

InGaAsPupper confinement layer (with DFB Bragg gratings in DFB regions)

InGaAsPundoped multiple quantum well active region

InGaAsP

Materials

Materials described outside the worked examples.

InGaAsP

Lower Confinement Layer/Upper Confinement Layer/DFB Bragg Grating Material

Active Region/Doped Passive Optical Waveguide Host

InP

N-Type Substrate/P-Type Cover Layer/DFB Bragg Grating Material

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
DFB Bragg grating period	290 nm	InGaAsP
DFB Bragg grating thickness

Why these are connected

Related documents with shared materials, methods, properties, or citations.

INP-BASED MONOLITHIC INTEGRATED CHAOTIC SEMICONDUCTOR LASER CHIP CAPABLE OF FEEDING BACK RANDOMLY DIFFUSED LIGHT | Matter42 Literature