Patent
US 11,152,767OF THE INVENTION
Sidi Aboujja
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 11,152,767Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An edge emitting semiconductor laser containing multiple monolithic laser diodes, using aluminum indium gallium arsenide phosphide A lI nGaAs/I nGaAsP/I nP material system, emitting in long wavelengths (1250nm to 1720nm), wherein the monolithic laser diodes are connected one to another by one or more tunnel junctions; and each monolithic laser diode comprises an active region with barriers and no more than three quantum wells constructed from various ratios of aluminum, gallium, indium and arsenic.
The device as claimed in claim 1, further comprising an I nP substrate and cladding layers in each monolithic laser diode with doping concentrations between 1 e17 cm⁻³ and 6e17 cm⁻³.
The device as claimed in claim 1, wherein the p-doped cladding layer of each monolithic laser diode is doped with zinc.
The device as claimed in claim 1, wherein each monolithic laser diode comprising an aluminum indium arsenide layer between the active region and at least one of the cladding layers.
The device as claimed in claim 1, wherein the doping of the aluminum indium arsenide layer in each monolithic laser diode is zin c and its concentration is equal or less than le1 8cm⁻³.
The device as claimed in claim 1, wherein the number of the monolithic laser diodes is two, three or four and each monolithic laser diode contains graded index confining layers.
The device as claimed in claim 1, wherein a P-type aluminum indium gallium arsenide waveguide layer is equal or less than le1 7cm⁻³, in one or two or all monolithic laser diodes.
The device as claimed in claim 1, wherein a P-type aluminum indium gallium arsenide cladding layer doping concentration is equal or less than le l 8cm⁻³ for one, two or all monolithic laser diodes.
The device as claimed in claim 1, wherein an N-type aluminum indium gallium arsenide waveguide layer doping concentration is equal or less than le l 7cm⁻³ for one, two or all monolithic laser diodes.
The device as claimed in claim 1, wherein an N-type aluminum indium gallium arsenide cladding layers doping is equal or less than 5e l 7cm⁻³, in one, two or all monolithic laser diodes.
The device as claimed in claim 1, comprising a ridge waveguide structure on the top monolithic laser that supports multiple spatial modes in each monolithic laser diode.
The device as claimed in claim 1, comprising a groove etched from the top p-type indium gallium arsenide contact layer through the active area.
The device as claimed in claim 1, with aperture width is between 2 and 350 micrometer and the cavity length is between 0.5mm and 4 mm.
The device as claimed in claim 1, wherein light emits in the spectral range of 1250 micrometers and 1720 micrometers.
The device as claimed in 1, wherein the Aluminum Indium gallium Arsenide quantum wells being sized between 5 nm and 10 nm, wherein the active region is placed between two confining layers of opposite conductive doping where p-doped confining layers start with a concentration of 5e16 cm⁻³-25 %/+50% and increase to a final concentration of 1 e17 cm⁻³, -25%+ 5 0%, and an interface layer that immediately follows the p-doped confining layers has a fixed doping concentration which is between the final doping concentration of the confining layers and 1 e18 cm⁻³, + 300 %.
An edge emitting semiconductor laser grown on indium phosphide substrate containing multiple monolithic laser diodes, in which the monolithic laser diodes are connected to each other with a tunnel junction, wherein each monolithic laser diode comprises an active region with barriers and quantum wells constructed from various ratios of aluminum, gallium, indium and arsenic wherein the quantum well structures of the multiple active areas differ from one to another in terms of their layer thicknesses and/or their material compositions such that at least two emission areas have different emission wavelengths by at least 5 nm.
An edge emitting semiconductor laser grown on indium phosphide substrate containing multiple monolithic laser diodes, in which the monolithic laser diodes are connected to each other with a tunnel junction, wherein each monolithic laser diode comprises an active region with barriers and quantum wells constructed from various ratios of aluminum, gallium, indium and arsenic wherein the quantum well structures of the multiple active areas are the same or differ from one to another in terms of their layer thicknesses and/or their material compositions such that all emission areas have the same emission wavelengths within 5 nm.
The device as claimed in claim 18, wherein the photoluminescence emission difference between one monolithic laser diode to another one is less than 5 nm.
The device as claimed in claim 18, wherein each monolithic laser diode compromise aluminum indium gallium arsenide barriers with thicknesses between 5 nanometers and nanometers.
The device as claimed in claim 18, wherein the monolithic laser diodes are connected to one another by tunnel junctions and the tunnel junctions have a thickness of 50 nm or less.
The device as claimed in claim 18, wherein the tunnel junction comprising two indium gallium arsenide layers, P-type and N-type.
The device as claimed in claim 18, wherein the tunnel junction P-type indium gallium arsenide layer is doped with Carbon or Zinc with doping concentration higher than 5e18 cm⁻³ and less than l e20 cm⁻³.
The device as claimed in claim 18, wherein the tunnel junction N-type indium gallium arsenide layer is doped with Silicon or Tellerium with doping concentration higher than 5e18 cm⁻³ and less than 1 e20 cm⁻³.
The device as claimed in claim 18, wherein the tunnel junction P-type indium gallium arsenide layer thickness is less than 50 nm and N-type indium gallium arsenide layer thickness is less than 50 nm.
Layer stacks claimed or described, ordered top of device to substrate.
edge emitting semiconductor laser with multiple monolithic laser diodes (AlInGaAs/InGaAsP/InP, 1250-1720 nm, no more than 3 QWs)
Materials described outside the worked examples.
indium phosphide
InP
aluminum indium gallium arsenide
AlInGaAs
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1250–1720 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,152,767Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An edge emitting semiconductor laser containing multiple monolithic laser diodes, using aluminum indium gallium arsenide phosphide A lI nGaAs/I nGaAsP/I nP material system, emitting in long wavelengths (1250nm to 1720nm), wherein the monolithic laser diodes are connected one to another by one or more tunnel junctions; and each monolithic laser diode comprises an active region with barriers and no more than three quantum wells constructed from various ratios of aluminum, gallium, indium and arsenic.
The device as claimed in claim 1, further comprising an I nP substrate and cladding layers in each monolithic laser diode with doping concentrations between 1 e17 cm⁻³ and 6e17 cm⁻³.
The device as claimed in claim 1, wherein the p-doped cladding layer of each monolithic laser diode is doped with zinc.
The device as claimed in claim 1, wherein each monolithic laser diode comprising an aluminum indium arsenide layer between the active region and at least one of the cladding layers.
The device as claimed in claim 1, wherein the doping of the aluminum indium arsenide layer in each monolithic laser diode is zin c and its concentration is equal or less than le1 8cm⁻³.
The device as claimed in claim 1, wherein the number of the monolithic laser diodes is two, three or four and each monolithic laser diode contains graded index confining layers.
The device as claimed in claim 1, wherein a P-type aluminum indium gallium arsenide waveguide layer is equal or less than le1 7cm⁻³, in one or two or all monolithic laser diodes.
The device as claimed in claim 1, wherein a P-type aluminum indium gallium arsenide cladding layer doping concentration is equal or less than le l 8cm⁻³ for one, two or all monolithic laser diodes.
The device as claimed in claim 1, wherein an N-type aluminum indium gallium arsenide waveguide layer doping concentration is equal or less than le l 7cm⁻³ for one, two or all monolithic laser diodes.
The device as claimed in claim 1, wherein an N-type aluminum indium gallium arsenide cladding layers doping is equal or less than 5e l 7cm⁻³, in one, two or all monolithic laser diodes.
The device as claimed in claim 1, comprising a ridge waveguide structure on the top monolithic laser that supports multiple spatial modes in each monolithic laser diode.
The device as claimed in claim 1, comprising a groove etched from the top p-type indium gallium arsenide contact layer through the active area.
The device as claimed in claim 1, with aperture width is between 2 and 350 micrometer and the cavity length is between 0.5mm and 4 mm.
The device as claimed in claim 1, wherein light emits in the spectral range of 1250 micrometers and 1720 micrometers.
The device as claimed in 1, wherein the Aluminum Indium gallium Arsenide quantum wells being sized between 5 nm and 10 nm, wherein the active region is placed between two confining layers of opposite conductive doping where p-doped confining layers start with a concentration of 5e16 cm⁻³-25 %/+50% and increase to a final concentration of 1 e17 cm⁻³, -25%+ 5 0%, and an interface layer that immediately follows the p-doped confining layers has a fixed doping concentration which is between the final doping concentration of the confining layers and 1 e18 cm⁻³, + 300 %.
An edge emitting semiconductor laser grown on indium phosphide substrate containing multiple monolithic laser diodes, in which the monolithic laser diodes are connected to each other with a tunnel junction, wherein each monolithic laser diode comprises an active region with barriers and quantum wells constructed from various ratios of aluminum, gallium, indium and arsenic wherein the quantum well structures of the multiple active areas differ from one to another in terms of their layer thicknesses and/or their material compositions such that at least two emission areas have different emission wavelengths by at least 5 nm.
An edge emitting semiconductor laser grown on indium phosphide substrate containing multiple monolithic laser diodes, in which the monolithic laser diodes are connected to each other with a tunnel junction, wherein each monolithic laser diode comprises an active region with barriers and quantum wells constructed from various ratios of aluminum, gallium, indium and arsenic wherein the quantum well structures of the multiple active areas are the same or differ from one to another in terms of their layer thicknesses and/or their material compositions such that all emission areas have the same emission wavelengths within 5 nm.
The device as claimed in claim 18, wherein the photoluminescence emission difference between one monolithic laser diode to another one is less than 5 nm.
The device as claimed in claim 18, wherein each monolithic laser diode compromise aluminum indium gallium arsenide barriers with thicknesses between 5 nanometers and nanometers.
The device as claimed in claim 18, wherein the monolithic laser diodes are connected to one another by tunnel junctions and the tunnel junctions have a thickness of 50 nm or less.
The device as claimed in claim 18, wherein the tunnel junction comprising two indium gallium arsenide layers, P-type and N-type.
The device as claimed in claim 18, wherein the tunnel junction P-type indium gallium arsenide layer is doped with Carbon or Zinc with doping concentration higher than 5e18 cm⁻³ and less than l e20 cm⁻³.
The device as claimed in claim 18, wherein the tunnel junction N-type indium gallium arsenide layer is doped with Silicon or Tellerium with doping concentration higher than 5e18 cm⁻³ and less than 1 e20 cm⁻³.
The device as claimed in claim 18, wherein the tunnel junction P-type indium gallium arsenide layer thickness is less than 50 nm and N-type indium gallium arsenide layer thickness is less than 50 nm.
Layer stacks claimed or described, ordered top of device to substrate.
edge emitting semiconductor laser with multiple monolithic laser diodes (AlInGaAs/InGaAsP/InP, 1250-1720 nm, no more than 3 QWs)
Materials described outside the worked examples.
indium phosphide
InP
aluminum indium gallium arsenide
AlInGaAs
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1250–1720 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,152,767Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An edge emitting semiconductor laser containing multiple monolithic laser diodes, using aluminum indium gallium arsenide phosphide A lI nGaAs/I nGaAsP/I nP material system, emitting in long wavelengths (1250nm to 1720nm), wherein the monolithic laser diodes are connected one to another by one or more tunnel junctions; and each monolithic laser diode comprises an active region with barriers and no more than three quantum wells constructed from various ratios of aluminum, gallium, indium and arsenic.
The device as claimed in claim 1, further comprising an I nP substrate and cladding layers in each monolithic laser diode with doping concentrations between 1 e17 cm⁻³ and 6e17 cm⁻³.
The device as claimed in claim 1, wherein the p-doped cladding layer of each monolithic laser diode is doped with zinc.
The device as claimed in claim 1, wherein each monolithic laser diode comprising an aluminum indium arsenide layer between the active region and at least one of the cladding layers.
The device as claimed in claim 1, wherein the doping of the aluminum indium arsenide layer in each monolithic laser diode is zin c and its concentration is equal or less than le1 8cm⁻³.
The device as claimed in claim 1, wherein the number of the monolithic laser diodes is two, three or four and each monolithic laser diode contains graded index confining layers.
The device as claimed in claim 1, wherein a P-type aluminum indium gallium arsenide waveguide layer is equal or less than le1 7cm⁻³, in one or two or all monolithic laser diodes.
The device as claimed in claim 1, wherein a P-type aluminum indium gallium arsenide cladding layer doping concentration is equal or less than le l 8cm⁻³ for one, two or all monolithic laser diodes.
The device as claimed in claim 1, wherein an N-type aluminum indium gallium arsenide waveguide layer doping concentration is equal or less than le l 7cm⁻³ for one, two or all monolithic laser diodes.
The device as claimed in claim 1, wherein an N-type aluminum indium gallium arsenide cladding layers doping is equal or less than 5e l 7cm⁻³, in one, two or all monolithic laser diodes.
The device as claimed in claim 1, comprising a ridge waveguide structure on the top monolithic laser that supports multiple spatial modes in each monolithic laser diode.
The device as claimed in claim 1, comprising a groove etched from the top p-type indium gallium arsenide contact layer through the active area.
The device as claimed in claim 1, with aperture width is between 2 and 350 micrometer and the cavity length is between 0.5mm and 4 mm.
The device as claimed in claim 1, wherein light emits in the spectral range of 1250 micrometers and 1720 micrometers.
The device as claimed in 1, wherein the Aluminum Indium gallium Arsenide quantum wells being sized between 5 nm and 10 nm, wherein the active region is placed between two confining layers of opposite conductive doping where p-doped confining layers start with a concentration of 5e16 cm⁻³-25 %/+50% and increase to a final concentration of 1 e17 cm⁻³, -25%+ 5 0%, and an interface layer that immediately follows the p-doped confining layers has a fixed doping concentration which is between the final doping concentration of the confining layers and 1 e18 cm⁻³, + 300 %.
An edge emitting semiconductor laser grown on indium phosphide substrate containing multiple monolithic laser diodes, in which the monolithic laser diodes are connected to each other with a tunnel junction, wherein each monolithic laser diode comprises an active region with barriers and quantum wells constructed from various ratios of aluminum, gallium, indium and arsenic wherein the quantum well structures of the multiple active areas differ from one to another in terms of their layer thicknesses and/or their material compositions such that at least two emission areas have different emission wavelengths by at least 5 nm.
An edge emitting semiconductor laser grown on indium phosphide substrate containing multiple monolithic laser diodes, in which the monolithic laser diodes are connected to each other with a tunnel junction, wherein each monolithic laser diode comprises an active region with barriers and quantum wells constructed from various ratios of aluminum, gallium, indium and arsenic wherein the quantum well structures of the multiple active areas are the same or differ from one to another in terms of their layer thicknesses and/or their material compositions such that all emission areas have the same emission wavelengths within 5 nm.
The device as claimed in claim 18, wherein the photoluminescence emission difference between one monolithic laser diode to another one is less than 5 nm.
The device as claimed in claim 18, wherein each monolithic laser diode compromise aluminum indium gallium arsenide barriers with thicknesses between 5 nanometers and nanometers.
The device as claimed in claim 18, wherein the monolithic laser diodes are connected to one another by tunnel junctions and the tunnel junctions have a thickness of 50 nm or less.
The device as claimed in claim 18, wherein the tunnel junction comprising two indium gallium arsenide layers, P-type and N-type.
The device as claimed in claim 18, wherein the tunnel junction P-type indium gallium arsenide layer is doped with Carbon or Zinc with doping concentration higher than 5e18 cm⁻³ and less than l e20 cm⁻³.
The device as claimed in claim 18, wherein the tunnel junction N-type indium gallium arsenide layer is doped with Silicon or Tellerium with doping concentration higher than 5e18 cm⁻³ and less than 1 e20 cm⁻³.
The device as claimed in claim 18, wherein the tunnel junction P-type indium gallium arsenide layer thickness is less than 50 nm and N-type indium gallium arsenide layer thickness is less than 50 nm.
Layer stacks claimed or described, ordered top of device to substrate.
edge emitting semiconductor laser with multiple monolithic laser diodes (AlInGaAs/InGaAsP/InP, 1250-1720 nm, no more than 3 QWs)
Materials described outside the worked examples.
indium phosphide
InP
aluminum indium gallium arsenide
AlInGaAs
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1250–1720 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,152,767Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An edge emitting semiconductor laser containing multiple monolithic laser diodes, using aluminum indium gallium arsenide phosphide A lI nGaAs/I nGaAsP/I nP material system, emitting in long wavelengths (1250nm to 1720nm), wherein the monolithic laser diodes are connected one to another by one or more tunnel junctions; and each monolithic laser diode comprises an active region with barriers and no more than three quantum wells constructed from various ratios of aluminum, gallium, indium and arsenic.
The device as claimed in claim 1, further comprising an I nP substrate and cladding layers in each monolithic laser diode with doping concentrations between 1 e17 cm⁻³ and 6e17 cm⁻³.
The device as claimed in claim 1, wherein the p-doped cladding layer of each monolithic laser diode is doped with zinc.
The device as claimed in claim 1, wherein each monolithic laser diode comprising an aluminum indium arsenide layer between the active region and at least one of the cladding layers.
The device as claimed in claim 1, wherein the doping of the aluminum indium arsenide layer in each monolithic laser diode is zin c and its concentration is equal or less than le1 8cm⁻³.
The device as claimed in claim 1, wherein the number of the monolithic laser diodes is two, three or four and each monolithic laser diode contains graded index confining layers.
The device as claimed in claim 1, wherein a P-type aluminum indium gallium arsenide waveguide layer is equal or less than le1 7cm⁻³, in one or two or all monolithic laser diodes.
The device as claimed in claim 1, wherein a P-type aluminum indium gallium arsenide cladding layer doping concentration is equal or less than le l 8cm⁻³ for one, two or all monolithic laser diodes.
The device as claimed in claim 1, wherein an N-type aluminum indium gallium arsenide waveguide layer doping concentration is equal or less than le l 7cm⁻³ for one, two or all monolithic laser diodes.
The device as claimed in claim 1, wherein an N-type aluminum indium gallium arsenide cladding layers doping is equal or less than 5e l 7cm⁻³, in one, two or all monolithic laser diodes.
The device as claimed in claim 1, comprising a ridge waveguide structure on the top monolithic laser that supports multiple spatial modes in each monolithic laser diode.
The device as claimed in claim 1, comprising a groove etched from the top p-type indium gallium arsenide contact layer through the active area.
The device as claimed in claim 1, with aperture width is between 2 and 350 micrometer and the cavity length is between 0.5mm and 4 mm.
The device as claimed in claim 1, wherein light emits in the spectral range of 1250 micrometers and 1720 micrometers.
The device as claimed in 1, wherein the Aluminum Indium gallium Arsenide quantum wells being sized between 5 nm and 10 nm, wherein the active region is placed between two confining layers of opposite conductive doping where p-doped confining layers start with a concentration of 5e16 cm⁻³-25 %/+50% and increase to a final concentration of 1 e17 cm⁻³, -25%+ 5 0%, and an interface layer that immediately follows the p-doped confining layers has a fixed doping concentration which is between the final doping concentration of the confining layers and 1 e18 cm⁻³, + 300 %.
An edge emitting semiconductor laser grown on indium phosphide substrate containing multiple monolithic laser diodes, in which the monolithic laser diodes are connected to each other with a tunnel junction, wherein each monolithic laser diode comprises an active region with barriers and quantum wells constructed from various ratios of aluminum, gallium, indium and arsenic wherein the quantum well structures of the multiple active areas differ from one to another in terms of their layer thicknesses and/or their material compositions such that at least two emission areas have different emission wavelengths by at least 5 nm.
An edge emitting semiconductor laser grown on indium phosphide substrate containing multiple monolithic laser diodes, in which the monolithic laser diodes are connected to each other with a tunnel junction, wherein each monolithic laser diode comprises an active region with barriers and quantum wells constructed from various ratios of aluminum, gallium, indium and arsenic wherein the quantum well structures of the multiple active areas are the same or differ from one to another in terms of their layer thicknesses and/or their material compositions such that all emission areas have the same emission wavelengths within 5 nm.
The device as claimed in claim 18, wherein the photoluminescence emission difference between one monolithic laser diode to another one is less than 5 nm.
The device as claimed in claim 18, wherein each monolithic laser diode compromise aluminum indium gallium arsenide barriers with thicknesses between 5 nanometers and nanometers.
The device as claimed in claim 18, wherein the monolithic laser diodes are connected to one another by tunnel junctions and the tunnel junctions have a thickness of 50 nm or less.
The device as claimed in claim 18, wherein the tunnel junction comprising two indium gallium arsenide layers, P-type and N-type.
The device as claimed in claim 18, wherein the tunnel junction P-type indium gallium arsenide layer is doped with Carbon or Zinc with doping concentration higher than 5e18 cm⁻³ and less than l e20 cm⁻³.
The device as claimed in claim 18, wherein the tunnel junction N-type indium gallium arsenide layer is doped with Silicon or Tellerium with doping concentration higher than 5e18 cm⁻³ and less than 1 e20 cm⁻³.
The device as claimed in claim 18, wherein the tunnel junction P-type indium gallium arsenide layer thickness is less than 50 nm and N-type indium gallium arsenide layer thickness is less than 50 nm.
Layer stacks claimed or described, ordered top of device to substrate.
edge emitting semiconductor laser with multiple monolithic laser diodes (AlInGaAs/InGaAsP/InP, 1250-1720 nm, no more than 3 QWs)
Materials described outside the worked examples.
indium phosphide
InP
aluminum indium gallium arsenide
AlInGaAs
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1250–1720 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
edge emitting semiconductor laser on InP with multiple monolithic laser diodes having different emission wavelengths (>=5 nm apart)
edge emitting semiconductor laser on InP with multiple monolithic laser diodes having same emission wavelengths (within 5 nm)
indium gallium arsenide
InGaAs
tunnel junction
aluminum indium arsenide
AlInAs
carbon dopant
C
zinc dopant
Zn
silicon dopant
Si
tellurium dopant
Te
| — |
Thickness | 3–15 µm | — |
Thickness | 0.5–4 mm | — |
Thickness | 50–350 µm | — |
Thickness | ≤ 600000000000000000 cm | — |
Thickness | ≥ 600000000000000000 cm | — |
Thickness | 2–10 µm | — |
Thickness | 2–350 µm | — |
Thickness | ≤ 5 nm | — |
Thickness | ≤ 50 nm | — |
Thickness | ≥ 5 nm | — |
Thickness | ≥ 1300 nm | — |
edge emitting semiconductor laser on InP with multiple monolithic laser diodes having different emission wavelengths (>=5 nm apart)
edge emitting semiconductor laser on InP with multiple monolithic laser diodes having same emission wavelengths (within 5 nm)
indium gallium arsenide
InGaAs
tunnel junction
aluminum indium arsenide
AlInAs
carbon dopant
C
zinc dopant
Zn
silicon dopant
Si
tellurium dopant
Te
| — |
Thickness | 3–15 µm | — |
Thickness | 0.5–4 mm | — |
Thickness | 50–350 µm | — |
Thickness | ≤ 600000000000000000 cm | — |
Thickness | ≥ 600000000000000000 cm | — |
Thickness | 2–10 µm | — |
Thickness | 2–350 µm | — |
Thickness | ≤ 5 nm | — |
Thickness | ≤ 50 nm | — |
Thickness | ≥ 5 nm | — |
Thickness | ≥ 1300 nm | — |
edge emitting semiconductor laser on InP with multiple monolithic laser diodes having different emission wavelengths (>=5 nm apart)
edge emitting semiconductor laser on InP with multiple monolithic laser diodes having same emission wavelengths (within 5 nm)
indium gallium arsenide
InGaAs
tunnel junction
aluminum indium arsenide
AlInAs
carbon dopant
C
zinc dopant
Zn
silicon dopant
Si
tellurium dopant
Te
| — |
Thickness | 3–15 µm | — |
Thickness | 0.5–4 mm | — |
Thickness | 50–350 µm | — |
Thickness | ≤ 600000000000000000 cm | — |
Thickness | ≥ 600000000000000000 cm | — |
Thickness | 2–10 µm | — |
Thickness | 2–350 µm | — |
Thickness | ≤ 5 nm | — |
Thickness | ≤ 50 nm | — |
Thickness | ≥ 5 nm | — |
Thickness | ≥ 1300 nm | — |
edge emitting semiconductor laser on InP with multiple monolithic laser diodes having different emission wavelengths (>=5 nm apart)
edge emitting semiconductor laser on InP with multiple monolithic laser diodes having same emission wavelengths (within 5 nm)
indium gallium arsenide
InGaAs
tunnel junction
aluminum indium arsenide
AlInAs
carbon dopant
C
zinc dopant
Zn
silicon dopant
Si
tellurium dopant
Te
| — |
Thickness | 3–15 µm | — |
Thickness | 0.5–4 mm | — |
Thickness | 50–350 µm | — |
Thickness | ≤ 600000000000000000 cm | — |
Thickness | ≥ 600000000000000000 cm | — |
Thickness | 2–10 µm | — |
Thickness | 2–350 µm | — |
Thickness | ≤ 5 nm | — |
Thickness | ≤ 50 nm | — |
Thickness | ≥ 5 nm | — |
Thickness | ≥ 1300 nm | — |