Quantum Capacitance and Electronic Properties of a Hexagonal Boron Nitride based FET Gas Sensor

Out-of-plane displacement of quantum color centers in monolayer h-BN

Moiré flat bands and antiferroelectric domains in lattice relaxed twisted bilayer hexagonal boron nitride under perpendicular electric fields

Excitons in Large Disordered Boron-Nitride Layer using Linear-Scaling Bethe-Salpeter Simulations

Optical absorption and photoluminescence of single layer boron nitride from a first principles cumulant approach

Impact of Monoatomic Vacancies in 2D Materials on the Performance of Magnetic Tunnel Junction Devices: Insights from Configurations and Interface Interactions

All-optical valley switch and clock of electronic dephasing

Deep Learning–Based Quantum Transport Simulations in Two-Dimensional Materials

Arbitrarily structured quantum emission with a multifunctional metalens

First-principles band alignment engineering in polar and nonpolar orientations for wurtzite AlN, GaN, and BxAl1−xN alloys

Quantum Capacitance and Electronic Properties of a Hexagonal Boron Nitride based FET Gas Sensor

Out-of-plane displacement of quantum color centers in monolayer h-BN

Moiré flat bands and antiferroelectric domains in lattice relaxed twisted bilayer hexagonal boron nitride under perpendicular electric fields

Excitons in Large Disordered Boron-Nitride Layer using Linear-Scaling Bethe-Salpeter Simulations

Optical absorption and photoluminescence of single layer boron nitride from a first principles cumulant approach

Impact of Monoatomic Vacancies in 2D Materials on the Performance of Magnetic Tunnel Junction Devices: Insights from Configurations and Interface Interactions

All-optical valley switch and clock of electronic dephasing

Deep Learning–Based Quantum Transport Simulations in Two-Dimensional Materials

Arbitrarily structured quantum emission with a multifunctional metalens

First-principles band alignment engineering in polar and nonpolar orientations for wurtzite AlN, GaN, and BxAl1−xN alloys

Quantum Capacitance and Electronic Properties of a Hexagonal Boron Nitride based FET Gas Sensor

Out-of-plane displacement of quantum color centers in monolayer h-BN

Moiré flat bands and antiferroelectric domains in lattice relaxed twisted bilayer hexagonal boron nitride under perpendicular electric fields

Excitons in Large Disordered Boron-Nitride Layer using Linear-Scaling Bethe-Salpeter Simulations

Optical absorption and photoluminescence of single layer boron nitride from a first principles cumulant approach

Impact of Monoatomic Vacancies in 2D Materials on the Performance of Magnetic Tunnel Junction Devices: Insights from Configurations and Interface Interactions

All-optical valley switch and clock of electronic dephasing

Deep Learning–Based Quantum Transport Simulations in Two-Dimensional Materials

Arbitrarily structured quantum emission with a multifunctional metalens

First-principles band alignment engineering in polar and nonpolar orientations for wurtzite AlN, GaN, and BxAl1−xN alloys

Quantum Capacitance and Electronic Properties of a Hexagonal Boron Nitride based FET Gas Sensor

Out-of-plane displacement of quantum color centers in monolayer h-BN

Moiré flat bands and antiferroelectric domains in lattice relaxed twisted bilayer hexagonal boron nitride under perpendicular electric fields

Excitons in Large Disordered Boron-Nitride Layer using Linear-Scaling Bethe-Salpeter Simulations

Optical absorption and photoluminescence of single layer boron nitride from a first principles cumulant approach

Impact of Monoatomic Vacancies in 2D Materials on the Performance of Magnetic Tunnel Junction Devices: Insights from Configurations and Interface Interactions

All-optical valley switch and clock of electronic dephasing

Deep Learning–Based Quantum Transport Simulations in Two-Dimensional Materials

Arbitrarily structured quantum emission with a multifunctional metalens

First-principles band alignment engineering in polar and nonpolar orientations for wurtzite AlN, GaN, and BxAl1−xN alloys