Research paper
Computational DFTComputational Kinetic ModelComputed PhononComputed PL| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Optical Band Gap | pristine h-BN monolayer | 5.92eV | — | |||
| Defect Level Energy | a1 | 2.63eV | — | |||
| Defect Level Energy | b2(1) | 4.44eV | — | |||
| Defect Level Energy | b2(2) | 5.83eV | — | |||
| Out Of Plane Displacement | h | 0.61angstrom | — | |||
| Energy Lowering | out-of-plane distortion stabilization | 0.57eV | — | |||
| Defect Level Energy | a1 | 1.28eV | — | |||
| Defect Level Energy | b2(1) | 3.03eV | — | |||
| Defect Level Energy | b2(2) | 5.17eV | — | |||
| Out Of Plane Displacement | h | 0angstrom | — | |||
| Energy Lowering | in-plane displacement stabilization | 1.4eV | — | |||
| Energy Lowering | in-plane displacement stabilization | 0.7eV | — | |||
| Energy Lowering | in-plane displacement stabilization | 1.6eV | — | |||
| Defect Level Energy | a1 | 0.7eV | — | |||
| Defect Level Energy | b2(1) | 1.91eV | — | |||
| Defect Level Energy | b2(2) | 5.19eV | — | |||
| Out Of Plane Displacement | h | 0.49angstrom | — | |||
| Energy Lowering | out-of-plane distortion stabilization | 1.6eV | — | |||
| Calculated Phonon Frequency | soft mode | -14.7THz | — | |||
| Calculated Phonon Frequency | soft mode | -1.3THz | — | |||
| Reorganization Energy | lambdaGS | 0.89eV | — | |||
| Reorganization Energy | lambdaES | 0.783eV | — | |||
| Reorganization Energy | lambdaGS | 0.307eV | — | |||
| Reorganization Energy | lambdaES | 0.292eV | — | |||
| Reorganization Energy | lambdaGS | 0.91eV | — | |||
| Reorganization Energy | lambdaES | 0.949eV | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Optical Band Gap | pristine h-BN monolayer | 5.92eV | — | |||
| Defect Level Energy | a1 | 2.63eV | — | |||
| Defect Level Energy | b2(1) | 4.44eV | — | |||
| Defect Level Energy | b2(2) | 5.83eV | — | |||
| Out Of Plane Displacement | h | 0.61angstrom | — | |||
| Energy Lowering | out-of-plane distortion stabilization | 0.57eV | — | |||
| Defect Level Energy | a1 | 1.28eV | — | |||
| Defect Level Energy | b2(1) | 3.03eV | — | |||
| Defect Level Energy | b2(2) | 5.17eV | — | |||
| Out Of Plane Displacement | h | 0angstrom | — | |||
| Energy Lowering | in-plane displacement stabilization | 1.4eV | — | |||
| Energy Lowering | in-plane displacement stabilization | 0.7eV | — | |||
| Energy Lowering | in-plane displacement stabilization | 1.6eV | — | |||
| Defect Level Energy | a1 | 0.7eV | — | |||
| Defect Level Energy | b2(1) | 1.91eV | — | |||
| Defect Level Energy | b2(2) | 5.19eV | — | |||
| Out Of Plane Displacement | h | 0.49angstrom | — | |||
| Energy Lowering | out-of-plane distortion stabilization | 1.6eV | — | |||
| Calculated Phonon Frequency | soft mode | -14.7THz | — | |||
| Calculated Phonon Frequency | soft mode | -1.3THz | — | |||
| Reorganization Energy | lambdaGS | 0.89eV | — | |||
| Reorganization Energy | lambdaES | 0.783eV | — | |||
| Reorganization Energy | lambdaGS | 0.307eV | — | |||
| Reorganization Energy | lambdaES | 0.292eV | — | |||
| Reorganization Energy | lambdaGS | 0.91eV | — | |||
| Reorganization Energy | lambdaES | 0.949eV | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Optical Band Gap | pristine h-BN monolayer | 5.92eV | — | |||
| Defect Level Energy | a1 | 2.63eV | — | |||
| Defect Level Energy | b2(1) | 4.44eV | — | |||
| Defect Level Energy | b2(2) | 5.83eV | — | |||
| Out Of Plane Displacement | h | 0.61angstrom | — | |||
| Energy Lowering | out-of-plane distortion stabilization | 0.57eV | — | |||
| Defect Level Energy | a1 | 1.28eV | — | |||
| Defect Level Energy | b2(1) | 3.03eV | — | |||
| Defect Level Energy | b2(2) | 5.17eV | — | |||
| Out Of Plane Displacement | h | 0angstrom | — | |||
| Energy Lowering | in-plane displacement stabilization | 1.4eV | — | |||
| Energy Lowering | in-plane displacement stabilization | 0.7eV | — | |||
| Energy Lowering | in-plane displacement stabilization | 1.6eV | — | |||
| Defect Level Energy | a1 | 0.7eV | — | |||
| Defect Level Energy | b2(1) | 1.91eV | — | |||
| Defect Level Energy | b2(2) | 5.19eV | — | |||
| Out Of Plane Displacement | h | 0.49angstrom | — | |||
| Energy Lowering | out-of-plane distortion stabilization | 1.6eV | — | |||
| Calculated Phonon Frequency | soft mode | -14.7THz | — | |||
| Calculated Phonon Frequency | soft mode | -1.3THz | — | |||
| Reorganization Energy | lambdaGS | 0.89eV | — | |||
| Reorganization Energy | lambdaES | 0.783eV | — | |||
| Reorganization Energy | lambdaGS | 0.307eV | — | |||
| Reorganization Energy | lambdaES | 0.292eV | — | |||
| Reorganization Energy | lambdaGS | 0.91eV | — | |||
| Reorganization Energy | lambdaES | 0.949eV | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Optical Band Gap | pristine h-BN monolayer | 5.92eV | — | |||
| Defect Level Energy | a1 | 2.63eV | — | |||
| Defect Level Energy | b2(1) | 4.44eV | — | |||
| Defect Level Energy | b2(2) | 5.83eV | — | |||
| Out Of Plane Displacement | h | 0.61angstrom | — | |||
| Energy Lowering | out-of-plane distortion stabilization | 0.57eV | — | |||
| Defect Level Energy | a1 | 1.28eV | — | |||
| Defect Level Energy | b2(1) | 3.03eV | — | |||
| Defect Level Energy | b2(2) | 5.17eV | — | |||
| Out Of Plane Displacement | h | 0angstrom | — | |||
| Energy Lowering | in-plane displacement stabilization | 1.4eV | — | |||
| Energy Lowering | in-plane displacement stabilization | 0.7eV | — | |||
| Energy Lowering | in-plane displacement stabilization | 1.6eV | — | |||
| Defect Level Energy | a1 | 0.7eV | — | |||
| Defect Level Energy | b2(1) | 1.91eV | — | |||
| Defect Level Energy | b2(2) | 5.19eV | — | |||
| Out Of Plane Displacement | h | 0.49angstrom | — | |||
| Energy Lowering | out-of-plane distortion stabilization | 1.6eV | — | |||
| Calculated Phonon Frequency | soft mode | -14.7THz | — | |||
| Calculated Phonon Frequency | soft mode | -1.3THz | — | |||
| Reorganization Energy | lambdaGS | 0.89eV | — | |||
| Reorganization Energy | lambdaES | 0.783eV | — | |||
| Reorganization Energy | lambdaGS | 0.307eV | — | |||
| Reorganization Energy | lambdaES | 0.292eV | — | |||
| Reorganization Energy | lambdaGS | 0.91eV | — | |||
| Reorganization Energy | lambdaES | 0.949eV | — |