Research paper
Experimental CharacterizationComputational DFTEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation3 characterizations4 properties4 figures
1 preparation3 characterizations4 properties4 figures
1 preparation3 characterizations3 properties4 figures
3 characterizations1 property2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Particle Size | average Au nanoparticle size | 34nm | — | |||
| Structure Size | lateral size of Au nanotriangles | 70nm | — | |||
| Structure Size | diameter of Au nanodisks | 300nm | — | |||
| Optical Band Gap | p-GaN bandgap | 3.35eV | — | |||
| Operando Selectivity Switch | wavelength-dependent CO₂R selectivity | CO production favored under interband excitation (460-560 nm); H2 evolution favored under intraband excitation (640-800 nm) | — | |||
| Operando Selectivity Switch | geometry-dependent selectivity | larger nanodisks suffer transport losses and shift selectivity toward H2 evolution | — | |||
| Electrolyte Concentration | CsHCO₃ electrolyte concentration | 0.1M | — |
Related documents with shared materials, methods, properties, or citations.
BONDABLE TOP METAL CONTACTS FOR GALLIUM NITRIDE POWER DEVICES
METHOD OF FABRICATING GAN SUBSTRATE
Combining metal dewetting and lateral etching for the scalable top-down fabrication of GaN nanowire arrays with independently tunable diameter and spacing
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation3 characterizations4 properties4 figures
1 preparation3 characterizations4 properties4 figures
1 preparation3 characterizations3 properties4 figures
3 characterizations1 property2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Particle Size | average Au nanoparticle size | 34nm | — | |||
| Structure Size | lateral size of Au nanotriangles | 70nm | — | |||
| Structure Size | diameter of Au nanodisks | 300nm | — | |||
| Optical Band Gap | p-GaN bandgap | 3.35eV | — | |||
| Operando Selectivity Switch | wavelength-dependent CO₂R selectivity | CO production favored under interband excitation (460-560 nm); H2 evolution favored under intraband excitation (640-800 nm) | — | |||
| Operando Selectivity Switch | geometry-dependent selectivity | larger nanodisks suffer transport losses and shift selectivity toward H2 evolution | — | |||
| Electrolyte Concentration | CsHCO₃ electrolyte concentration | 0.1M | — |
Related documents with shared materials, methods, properties, or citations.
BONDABLE TOP METAL CONTACTS FOR GALLIUM NITRIDE POWER DEVICES
METHOD OF FABRICATING GAN SUBSTRATE
Combining metal dewetting and lateral etching for the scalable top-down fabrication of GaN nanowire arrays with independently tunable diameter and spacing
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation3 characterizations4 properties4 figures
1 preparation3 characterizations4 properties4 figures
1 preparation3 characterizations3 properties4 figures
3 characterizations1 property2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Particle Size | average Au nanoparticle size | 34nm | — | |||
| Structure Size | lateral size of Au nanotriangles | 70nm | — | |||
| Structure Size | diameter of Au nanodisks | 300nm | — | |||
| Optical Band Gap | p-GaN bandgap | 3.35eV | — | |||
| Operando Selectivity Switch | wavelength-dependent CO₂R selectivity | CO production favored under interband excitation (460-560 nm); H2 evolution favored under intraband excitation (640-800 nm) | — | |||
| Operando Selectivity Switch | geometry-dependent selectivity | larger nanodisks suffer transport losses and shift selectivity toward H2 evolution | — | |||
| Electrolyte Concentration | CsHCO₃ electrolyte concentration | 0.1M | — |
Related documents with shared materials, methods, properties, or citations.
BONDABLE TOP METAL CONTACTS FOR GALLIUM NITRIDE POWER DEVICES
METHOD OF FABRICATING GAN SUBSTRATE
Combining metal dewetting and lateral etching for the scalable top-down fabrication of GaN nanowire arrays with independently tunable diameter and spacing
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation3 characterizations4 properties4 figures
1 preparation3 characterizations4 properties4 figures
1 preparation3 characterizations3 properties4 figures
3 characterizations1 property2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Particle Size | average Au nanoparticle size | 34nm | — | |||
| Structure Size | lateral size of Au nanotriangles | 70nm | — | |||
| Structure Size | diameter of Au nanodisks | 300nm | — | |||
| Optical Band Gap | p-GaN bandgap | 3.35eV | — | |||
| Operando Selectivity Switch | wavelength-dependent CO₂R selectivity | CO production favored under interband excitation (460-560 nm); H2 evolution favored under intraband excitation (640-800 nm) | — | |||
| Operando Selectivity Switch | geometry-dependent selectivity | larger nanodisks suffer transport losses and shift selectivity toward H2 evolution | — | |||
| Electrolyte Concentration | CsHCO₃ electrolyte concentration | 0.1M | — |
Related documents with shared materials, methods, properties, or citations.
BONDABLE TOP METAL CONTACTS FOR GALLIUM NITRIDE POWER DEVICES
METHOD OF FABRICATING GAN SUBSTRATE
Combining metal dewetting and lateral etching for the scalable top-down fabrication of GaN nanowire arrays with independently tunable diameter and spacing