Research paper
Computational DFTComputed Band StructureEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 properties
2 properties
4 properties
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Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 properties
2 properties
4 properties
Related documents with shared materials, methods, properties, or citations.
Photostriction-tunable Polarization and Structural Dynamics in Interlayer Sliding Ferroelectrics
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Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 properties
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4 properties
Related documents with shared materials, methods, properties, or citations.
Photostriction-tunable Polarization and Structural Dynamics in Interlayer Sliding Ferroelectrics
Spin-dependent Transport Studies of Fe/MoxCr1-xS2/Fe Magnetic Tunnel Junction
Wannier Based Analysis of the Direct-Indirect Bandgap Transition by Stacking MoS2 Layers
Reevaluating the electrical impact of atomic carbon impurities in MoS2
Versatile van der Waals Heterostructures of γ-GeSe with h-BN/Graphene/MoS2
Effect of Strain on the Band Gap of Monolayer MoS2
Spin-dependent electronic transport in NiMnSb/MoS2(001)/NiMnSb magnetic tunnel junction
Long-range electrostatic contribution to the electron-phonon couplings and mobilities of two-dimensional and bulk materials
Bilayer borophene: The effects of substrate and stacking
The effects of point defect type, location, and density on the Schottky barrier height of Au/MoS2 heterojunction: A first-principles study
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Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 properties
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4 properties
Related documents with shared materials, methods, properties, or citations.
Photostriction-tunable Polarization and Structural Dynamics in Interlayer Sliding Ferroelectrics
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Wannier Based Analysis of the Direct-Indirect Bandgap Transition by Stacking MoS2 Layers
Reevaluating the electrical impact of atomic carbon impurities in MoS2
Versatile van der Waals Heterostructures of γ-GeSe with h-BN/Graphene/MoS2
Effect of Strain on the Band Gap of Monolayer MoS2
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