Research paper
TheoreticalComputed Raman| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Optical Absorption Enhancement | maximum spin-flip absorption | 0.2 | — | |||
| Polarization Factor | b | 1 | — | |||
| Polarization Factor | b (E ∥ Δ) | 0.75 | — | |||
| Polarization Factor | b (E ⊥ Δ) | 0.25 | — |
Electronic and magnetic ground states of {112} grain boundary in graphene in the extended Hubbard model
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Optical Absorption Enhancement | maximum spin-flip absorption | 0.2 | — | |||
| Polarization Factor | b | 1 | — | |||
| Polarization Factor | b (E ∥ Δ) | 0.75 | — | |||
| Polarization Factor | b (E ⊥ Δ) | 0.25 | — |
Electronic and magnetic ground states of {112} grain boundary in graphene in the extended Hubbard model
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Optical Absorption Enhancement | maximum spin-flip absorption | 0.2 | — | |||
| Polarization Factor | b | 1 | — | |||
| Polarization Factor | b (E ∥ Δ) | 0.75 | — | |||
| Polarization Factor | b (E ⊥ Δ) | 0.25 | — |
Electronic and magnetic ground states of {112} grain boundary in graphene in the extended Hubbard model
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Optical Absorption Enhancement | maximum spin-flip absorption | 0.2 | — | |||
| Polarization Factor | b | 1 | — | |||
| Polarization Factor | b (E ∥ Δ) | 0.75 | — | |||
| Polarization Factor | b (E ⊥ Δ) | 0.25 | — |
Electronic and magnetic ground states of {112} grain boundary in graphene in the extended Hubbard model