Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Photonic GaN-based membrane sample 1 with a rough backside; main membrane consists largely of c-plane GaN and includes an In0.15Ga0.85N quantum-well stack as a built-in light source. The membrane is fabricated on sapphire after patterning and sacrificial-layer removal.
ExperimentalGaNStudied MaterialIn0.15Ga0.85NStudied MaterialAl0.82In0.18NStudied MaterialGaNStudied Material
Photonic GaN-based membrane sample 2 with a smooth backside and the same membrane platform as sample 1, fabricated from a sapphire-supported heterostructure.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Photonic GaN-based membrane sample 1 with a rough backside; main membrane consists largely of c-plane GaN and includes an In0.15Ga0.85N quantum-well stack as a built-in light source. The membrane is fabricated on sapphire after patterning and sacrificial-layer removal.
ExperimentalGaNStudied MaterialIn0.15Ga0.85NStudied MaterialAl0.82In0.18NStudied MaterialGaNStudied Material
Photonic GaN-based membrane sample 2 with a smooth backside and the same membrane platform as sample 1, fabricated from a sapphire-supported heterostructure.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Photonic GaN-based membrane sample 1 with a rough backside; main membrane consists largely of c-plane GaN and includes an In0.15Ga0.85N quantum-well stack as a built-in light source. The membrane is fabricated on sapphire after patterning and sacrificial-layer removal.
ExperimentalGaNStudied MaterialIn0.15Ga0.85NStudied MaterialAl0.82In0.18NStudied MaterialGaNStudied Material
Photonic GaN-based membrane sample 2 with a smooth backside and the same membrane platform as sample 1, fabricated from a sapphire-supported heterostructure.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Photonic GaN-based membrane sample 1 with a rough backside; main membrane consists largely of c-plane GaN and includes an In0.15Ga0.85N quantum-well stack as a built-in light source. The membrane is fabricated on sapphire after patterning and sacrificial-layer removal.
ExperimentalGaNStudied MaterialIn0.15Ga0.85NStudied MaterialAl0.82In0.18NStudied MaterialGaNStudied Material
Photonic GaN-based membrane sample 2 with a smooth backside and the same membrane platform as sample 1, fabricated from a sapphire-supported heterostructure.