Research paper
Computational Kinetic ModelUltrafast Charge Separation Induced by a Uniform Field in Graphene Nanoribbons
Jan-Philip Joost, Michael Bonitz
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| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Formation Energy Ev | bound exciton binding energy | 1.2eV | — | |||
| Formation Energy Ev | bound exciton binding energy | 1.52eV | — | |||
| Formation Energy Ev | bound exciton binding energy | 1.84eV | — | |||
| Formation Energy Ev | bound exciton binding energy | 1.84eV | — | |||
| PL Peak | laser photon energy | 0.7eV | — | |||
| Fet On Off Ratio | average excited occupation per site | 0.06 | — | |||
| Fet On Off Ratio | average excited occupation per site | 0.02 | — | |||
| Fet On Off Ratio | average excited occupation per site | 0.03 | — | |||
| Fet On Off Ratio | average excited occupation per site | 0.01 | — | |||
| Fet On Off Ratio | y-component of dipole moment | -2ea | — | |||
| Exciton Binding Energy | exciton binding energy | 1.2eV | — | — | — | — |
| Exciton Binding Energy | exciton binding energy | 1.52eV | — | — | — | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Formation Energy Ev | bound exciton binding energy | 1.2eV | — | |||
| Formation Energy Ev | bound exciton binding energy | 1.52eV | — | |||
| Formation Energy Ev | bound exciton binding energy | 1.84eV | — | |||
| Formation Energy Ev | bound exciton binding energy | 1.84eV | — | |||
| PL Peak | laser photon energy | 0.7eV | — | |||
| Fet On Off Ratio | average excited occupation per site | 0.06 | — | |||
| Fet On Off Ratio | average excited occupation per site | 0.02 | — | |||
| Fet On Off Ratio | average excited occupation per site | 0.03 | — | |||
| Fet On Off Ratio | average excited occupation per site | 0.01 | — | |||
| Fet On Off Ratio | y-component of dipole moment | -2ea | — | |||
| Exciton Binding Energy | exciton binding energy | 1.2eV | — | — | — | — |
| Exciton Binding Energy | exciton binding energy | 1.52eV | — | — | — | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Formation Energy Ev | bound exciton binding energy | 1.2eV | — | |||
| Formation Energy Ev | bound exciton binding energy | 1.52eV | — | |||
| Formation Energy Ev | bound exciton binding energy | 1.84eV | — | |||
| Formation Energy Ev | bound exciton binding energy | 1.84eV | — | |||
| PL Peak | laser photon energy | 0.7eV | — | |||
| Fet On Off Ratio | average excited occupation per site | 0.06 | — | |||
| Fet On Off Ratio | average excited occupation per site | 0.02 | — | |||
| Fet On Off Ratio | average excited occupation per site | 0.03 | — | |||
| Fet On Off Ratio | average excited occupation per site | 0.01 | — | |||
| Fet On Off Ratio | y-component of dipole moment | -2ea | — | |||
| Exciton Binding Energy | exciton binding energy | 1.2eV | — | — | — | — |
| Exciton Binding Energy | exciton binding energy | 1.52eV | — | — | — | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Formation Energy Ev | bound exciton binding energy | 1.2eV | — | |||
| Formation Energy Ev | bound exciton binding energy | 1.52eV | — | |||
| Formation Energy Ev | bound exciton binding energy | 1.84eV | — | |||
| Formation Energy Ev | bound exciton binding energy | 1.84eV | — | |||
| PL Peak | laser photon energy | 0.7eV | — | |||
| Fet On Off Ratio | average excited occupation per site | 0.06 | — | |||
| Fet On Off Ratio | average excited occupation per site | 0.02 | — | |||
| Fet On Off Ratio | average excited occupation per site | 0.03 | — | |||
| Fet On Off Ratio | average excited occupation per site | 0.01 | — | |||
| Fet On Off Ratio | y-component of dipole moment | -2ea | — | |||
| Exciton Binding Energy | exciton binding energy | 1.2eV | — | — | — | — |
| Exciton Binding Energy | exciton binding energy | 1.52eV | — | — | — | — |