Research paper
TheoreticalComputational Multiscale| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Calculated Spectral Feature Position | persistent spectral feature | 10meV | — | |||
| Calculated Spectral Feature Position | flat-band splitting | 7meV | — | |||
| Calculated Spectral Feature Position | spectral gap scale | 10meV | — | |||
| Interaction Energy | Uff | 57.95meV | — |
Extended Fractional Chern Insulators Near Half Flux in Twisted Bilayer Graphene Above the Magic Angle
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Calculated Spectral Feature Position | persistent spectral feature | 10meV | — | |||
| Calculated Spectral Feature Position | flat-band splitting | 7meV | — | |||
| Calculated Spectral Feature Position | spectral gap scale | 10meV | — | |||
| Interaction Energy | Uff | 57.95meV | — |
Extended Fractional Chern Insulators Near Half Flux in Twisted Bilayer Graphene Above the Magic Angle
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Calculated Spectral Feature Position | persistent spectral feature | 10meV | — | |||
| Calculated Spectral Feature Position | flat-band splitting | 7meV | — | |||
| Calculated Spectral Feature Position | spectral gap scale | 10meV | — | |||
| Interaction Energy | Uff | 57.95meV | — |
Extended Fractional Chern Insulators Near Half Flux in Twisted Bilayer Graphene Above the Magic Angle
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Calculated Spectral Feature Position | persistent spectral feature | 10meV | — | |||
| Calculated Spectral Feature Position | flat-band splitting | 7meV | — | |||
| Calculated Spectral Feature Position | spectral gap scale | 10meV | — | |||
| Interaction Energy | Uff | 57.95meV | — |
Extended Fractional Chern Insulators Near Half Flux in Twisted Bilayer Graphene Above the Magic Angle