A method for manufacturing a large-scale single crystal monolayer of hexagonal boron nitride (hBN), comprising: preparing a single crystal copper substrate in a chemical vapor deposition (CVD) apparatus, wherein the sin q le crystal co pp er substrate is formed with a (111) surface; removing impurities [[of]] from the surface of the single crystal copper substrate; forming a plurality of hBN crystal seeds by depositing a vaporized ammonia borane or a vaporized borazine on the surface of the single crystal copper substrate such that a crystal direction of the pl urality of hBN crystal seeds corres p onds to a crystal direction of the surface of the sin q le crystal copp er substrate; and forming [[a]] the large-scale single crystal monolayer of hBN by mutual coherence between the hBN crystal seeds q rown e p itaxially, wherein distances between the pl urality of hBN crystal seeds are ad i usted by controllin q at least one of an amount of the va p orized ammonia borane, an amount of inert c as and an ex p osure time, thereby reducin q a defect that may be q enerated in a sin q le crystal of the lar q e-scale sin q le crystal monola y er of hBN and in the mutual coherence between the hBN crystal seeds. Currently amended

SVG 15298367.10-12-2018.JNBXSZ₇CLXEAPX5.CLM.1.svg 0.16 6 Black and white of claim [[2]] 1, wherein the preparing of the single crystal copper substrate includes: depositing [[the]] a copper thin film with a thickness of 10 nm or more on a metal, semiconductor, oxide or nitride substrate; and growing [[the]] a surface of the copper thin film to have the (111) face by heating the copper thin film deposited on the substrate. SVG 15298367.10-12-2018.JNBXSZ₇CLXEAPX5.CLM.2.svg 0.44 6.5 Black and white said removin q im p urities is p erformed by heating the single crystal copper substrate at 800 0C to 1,000 0C for to 50 minutes under a hydrogen atmosphere. Canceled

8-9. Canceled

Canceled

1 3. An apparatus for manufacturing a large-scale single crystal monolayer of hBN, comprising: a CVD apparatus that removes the impurities of the single crystal copper substrate and deposits the vaporized ammonia borane or the vaporized borazine supplied from the high molecular weight sublimation apparatus on the surface of the single crystal copper substrate from which the impurities are removed to form the plurality of hBN crystal seeds and grows the single crystal copper substrate by mutual coherence between the hBN crystal seeds to form the large-scale single crystal monolayer of hBN; and a high molecular weight sublimation apparatus which sublimates ammonia borane powder to the vaporized ammonia borane or vaporizes the ammonia borane powder to the vaporized borazine to be supplied to the CVD apparatus. Withdrawn

A method for manufacturing a large-scale single crystal monolayer of hexagonal boron nitride (hBN), comprising: preparing a single crystal copper substrate in a chemical vapor deposition (CVD) apparatus, wherein the sin q le crystal co pp er substrate is formed with a (111) surface; removing impurities [[of]] from the surface of the single crystal copper substrate; forming a plurality of hBN crystal seeds by depositing a vaporized ammonia borane or a vaporized borazine on the surface of the single crystal copper substrate such that a crystal direction of the pl urality of hBN crystal seeds corres p onds to a crystal direction of the surface of the sin q le crystal copp er substrate; and forming [[a]] the large-scale single crystal monolayer of hBN by mutual coherence between the hBN crystal seeds q rown e p itaxially, wherein distances between the pl urality of hBN crystal seeds are ad i usted by controllin q at least one of an amount of the va p orized ammonia borane, an amount of inert c as and an ex p osure time, thereby reducin q a defect that may be q enerated in a sin q le crystal of the lar q e-scale sin q le crystal monola y er of hBN and in the mutual coherence between the hBN crystal seeds. Currently amended

SVG 15298367.10-12-2018.JNBXSZ₇CLXEAPX5.CLM.1.svg 0.16 6 Black and white of claim [[2]] 1, wherein the preparing of the single crystal copper substrate includes: depositing [[the]] a copper thin film with a thickness of 10 nm or more on a metal, semiconductor, oxide or nitride substrate; and growing [[the]] a surface of the copper thin film to have the (111) face by heating the copper thin film deposited on the substrate. SVG 15298367.10-12-2018.JNBXSZ₇CLXEAPX5.CLM.2.svg 0.44 6.5 Black and white said removin q im p urities is p erformed by heating the single crystal copper substrate at 800 0C to 1,000 0C for to 50 minutes under a hydrogen atmosphere. Canceled

8-9. Canceled

Canceled

1 3. An apparatus for manufacturing a large-scale single crystal monolayer of hBN, comprising: a CVD apparatus that removes the impurities of the single crystal copper substrate and deposits the vaporized ammonia borane or the vaporized borazine supplied from the high molecular weight sublimation apparatus on the surface of the single crystal copper substrate from which the impurities are removed to form the plurality of hBN crystal seeds and grows the single crystal copper substrate by mutual coherence between the hBN crystal seeds to form the large-scale single crystal monolayer of hBN; and a high molecular weight sublimation apparatus which sublimates ammonia borane powder to the vaporized ammonia borane or vaporizes the ammonia borane powder to the vaporized borazine to be supplied to the CVD apparatus. Withdrawn

A method for manufacturing a large-scale single crystal monolayer of hexagonal boron nitride (hBN), comprising: preparing a single crystal copper substrate in a chemical vapor deposition (CVD) apparatus, wherein the sin q le crystal co pp er substrate is formed with a (111) surface; removing impurities [[of]] from the surface of the single crystal copper substrate; forming a plurality of hBN crystal seeds by depositing a vaporized ammonia borane or a vaporized borazine on the surface of the single crystal copper substrate such that a crystal direction of the pl urality of hBN crystal seeds corres p onds to a crystal direction of the surface of the sin q le crystal copp er substrate; and forming [[a]] the large-scale single crystal monolayer of hBN by mutual coherence between the hBN crystal seeds q rown e p itaxially, wherein distances between the pl urality of hBN crystal seeds are ad i usted by controllin q at least one of an amount of the va p orized ammonia borane, an amount of inert c as and an ex p osure time, thereby reducin q a defect that may be q enerated in a sin q le crystal of the lar q e-scale sin q le crystal monola y er of hBN and in the mutual coherence between the hBN crystal seeds. Currently amended

SVG 15298367.10-12-2018.JNBXSZ₇CLXEAPX5.CLM.1.svg 0.16 6 Black and white of claim [[2]] 1, wherein the preparing of the single crystal copper substrate includes: depositing [[the]] a copper thin film with a thickness of 10 nm or more on a metal, semiconductor, oxide or nitride substrate; and growing [[the]] a surface of the copper thin film to have the (111) face by heating the copper thin film deposited on the substrate. SVG 15298367.10-12-2018.JNBXSZ₇CLXEAPX5.CLM.2.svg 0.44 6.5 Black and white said removin q im p urities is p erformed by heating the single crystal copper substrate at 800 0C to 1,000 0C for to 50 minutes under a hydrogen atmosphere. Canceled

8-9. Canceled

Canceled

1 3. An apparatus for manufacturing a large-scale single crystal monolayer of hBN, comprising: a CVD apparatus that removes the impurities of the single crystal copper substrate and deposits the vaporized ammonia borane or the vaporized borazine supplied from the high molecular weight sublimation apparatus on the surface of the single crystal copper substrate from which the impurities are removed to form the plurality of hBN crystal seeds and grows the single crystal copper substrate by mutual coherence between the hBN crystal seeds to form the large-scale single crystal monolayer of hBN; and a high molecular weight sublimation apparatus which sublimates ammonia borane powder to the vaporized ammonia borane or vaporizes the ammonia borane powder to the vaporized borazine to be supplied to the CVD apparatus. Withdrawn

A method for manufacturing a large-scale single crystal monolayer of hexagonal boron nitride (hBN), comprising: preparing a single crystal copper substrate in a chemical vapor deposition (CVD) apparatus, wherein the sin q le crystal co pp er substrate is formed with a (111) surface; removing impurities [[of]] from the surface of the single crystal copper substrate; forming a plurality of hBN crystal seeds by depositing a vaporized ammonia borane or a vaporized borazine on the surface of the single crystal copper substrate such that a crystal direction of the pl urality of hBN crystal seeds corres p onds to a crystal direction of the surface of the sin q le crystal copp er substrate; and forming [[a]] the large-scale single crystal monolayer of hBN by mutual coherence between the hBN crystal seeds q rown e p itaxially, wherein distances between the pl urality of hBN crystal seeds are ad i usted by controllin q at least one of an amount of the va p orized ammonia borane, an amount of inert c as and an ex p osure time, thereby reducin q a defect that may be q enerated in a sin q le crystal of the lar q e-scale sin q le crystal monola y er of hBN and in the mutual coherence between the hBN crystal seeds. Currently amended

SVG 15298367.10-12-2018.JNBXSZ₇CLXEAPX5.CLM.1.svg 0.16 6 Black and white of claim [[2]] 1, wherein the preparing of the single crystal copper substrate includes: depositing [[the]] a copper thin film with a thickness of 10 nm or more on a metal, semiconductor, oxide or nitride substrate; and growing [[the]] a surface of the copper thin film to have the (111) face by heating the copper thin film deposited on the substrate. SVG 15298367.10-12-2018.JNBXSZ₇CLXEAPX5.CLM.2.svg 0.44 6.5 Black and white said removin q im p urities is p erformed by heating the single crystal copper substrate at 800 0C to 1,000 0C for to 50 minutes under a hydrogen atmosphere. Canceled

8-9. Canceled

Canceled

1 3. An apparatus for manufacturing a large-scale single crystal monolayer of hBN, comprising: a CVD apparatus that removes the impurities of the single crystal copper substrate and deposits the vaporized ammonia borane or the vaporized borazine supplied from the high molecular weight sublimation apparatus on the surface of the single crystal copper substrate from which the impurities are removed to form the plurality of hBN crystal seeds and grows the single crystal copper substrate by mutual coherence between the hBN crystal seeds to form the large-scale single crystal monolayer of hBN; and a high molecular weight sublimation apparatus which sublimates ammonia borane powder to the vaporized ammonia borane or vaporizes the ammonia borane powder to the vaporized borazine to be supplied to the CVD apparatus. Withdrawn