Patent
US 11,289,582SINGLE-CRYSTAL HEXAGONAL BORON NITRIDE LAYER AND METHOD FORMING SAME
Tse-An Chen
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 11,289,582Patent drawings and their descriptions. Click a drawing to enlarge it.
Figures 1 through 3 illustrate the perspective views of intermediate stages in the formation of a hexagonal boron nitride (hBN) film in accordance with some embodiments.
Figures 4 through 8 illustrate the perspective views of intermediate stages in the transferring of an hBN film in accordance with some embodiments.
Figures 9 through 16 illustrate the cross-sectional views of intermediate stages in the formation of a transistor based on an hBN film in accordance with some embodiments.
Figure 17 schematically illustrates a mono-layer of a Transition Metal Dichalcogenide (TMD) in accordance with some embodiments.
Figure 18 illustrates a process flow for forming an hBN film and a transistor based on the hBN film in accordance with some embodiments. CLEAN COPY
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method comprising: depositing a copper layer over a first substrate, wherein the copper layer is deposited to have a polycrystalline structure; annealing the copper layer, wherein after the annealing, the polycr y stalline structure is converted into a single-crystalline structure; depositing a hexagonal boron nitride (hBN) film on the copper layer; and removing the hBN film from the copper layer. Currently amended
The method of claim 1, wherein the copper layer is deposited to have a (111) surface plane. Original
The method of claim 1, wherein the annealing is performed with the copper layer facing down, and with the first substrate being over the copper layer. Original
The method of claim 1, wherein the removing the hBN film from the copper layer comprises: forming a protection layer over and contacting the hBN film; forming a thermal release tape on the protection layer; and separating the hBN film from the copper layer. Original
1 8. The method of claim 1 5 further comprising: depositing a polycrystalline copper layer; and performing an annealing process to convert the polycrystalline copper layer into the copper layer having the single-crystalline structure. Previously presented
The method of claim 1 8, wherein the annealing process is performed at a temperature in a range between 500° C and 1,1oo 0 C. Previously presented
The method of claim 1 5, wherein the first single-crystalline hBN film is a mono-layer hBN film. Previously presented
The method of claim 1, wherein the depositing the copper layer comprises sputtering copper from a copper target, with the sputtered copper being deposited on the first substrate. Previously presented
The method of claim 1, wherein the annealing the copper layer is performed at a temperature in a range between 5oo 0 C and 1,1oo 0 C. New
Canceled
A method comprising: forming a single-crystalline copper layer on a first substrate; depositing a first single-crystalline hexagonal boron nitride (hBN) film over the single- crystalline copper layer; transferring the first single-crystalline hBN film onto a second substrate; forming a Transition Metal Dichalcogenide (TMD) layer over the first single-crystalline hBN film; transferring a second single-crystalline hBN film over the TMD layer; and forming a transistor comprising the TMD layer as a channel. Previously presented
10. The method of claim 9, wherein the forming the transistor comprises: forming a source/drain region over and contacting the second single-crystalline hBN film, wherein the source/drain region is physically separated from the TMD layer by the second single-crystalline hBN film. Original
11. The method of claim 9, wherein the forming the transistor comprises: forming a source/drain region having a first sidewall contacting a second sidewall of the second single-crystalline hBN film and a third sidewall of the TMD layer. Withdrawn
The method of claim 9, wherein the depositing the first single- crystalline hBN film is self-stopping, and the first single-crystalline hBN film is a mono-layer film. Previously presented
The method of claim 9, wherein the forming the single-crystalline copper layer comprises: depositing a polycrystalline copper layer; and performing an annealing process to convert the polycrystalline copper layer into the single-crystalline copper layer. Original
A method comprising: depositing a first single-crystalline hexagonal boron nitride (hBN) film over a copper layer, wherein the copper layer has a single-crystalline structure, with the first single-crystalline hBN film being deposited on a (111) surface of the copper layer; forming a protection layer over and contacting the first single-crystalline hBN film; performing an electrochemical delamination process to separate the first single- crystalline hBN film and the protection layer from the copper layer; adhering the first single-crystalline hBN film and the protection layer to a substrate, with the first single-crystalline hBN film contacting the substrate; and removing the protection layer from the first single-crystalline hBN film. Previously presented
The method of claim 15, wherein the copper layer has a thickness in a range between 4 00 nm and 6 00 nm. Previously presented
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
2D transistor
Materials described outside the worked examples.
copper (Cu) film
Cu
hexagonal boron nitride (hBN) film
BN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Figures 9 through 16 illustrate the cross-sectional views of intermediate stages in the formation of a transistor based on an hBN film in accordance with some embodiments.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
copper film thickness | 400–600 nm | Cu |
annealing temperature for Cu polycrystalline to single-crystalline conversion | 500–1100 °C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,289,582Patent drawings and their descriptions. Click a drawing to enlarge it.
Figures 1 through 3 illustrate the perspective views of intermediate stages in the formation of a hexagonal boron nitride (hBN) film in accordance with some embodiments.
Figures 4 through 8 illustrate the perspective views of intermediate stages in the transferring of an hBN film in accordance with some embodiments.
Figures 9 through 16 illustrate the cross-sectional views of intermediate stages in the formation of a transistor based on an hBN film in accordance with some embodiments.
Figure 17 schematically illustrates a mono-layer of a Transition Metal Dichalcogenide (TMD) in accordance with some embodiments.
Figure 18 illustrates a process flow for forming an hBN film and a transistor based on the hBN film in accordance with some embodiments. CLEAN COPY
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method comprising: depositing a copper layer over a first substrate, wherein the copper layer is deposited to have a polycrystalline structure; annealing the copper layer, wherein after the annealing, the polycr y stalline structure is converted into a single-crystalline structure; depositing a hexagonal boron nitride (hBN) film on the copper layer; and removing the hBN film from the copper layer. Currently amended
The method of claim 1, wherein the copper layer is deposited to have a (111) surface plane. Original
The method of claim 1, wherein the annealing is performed with the copper layer facing down, and with the first substrate being over the copper layer. Original
The method of claim 1, wherein the removing the hBN film from the copper layer comprises: forming a protection layer over and contacting the hBN film; forming a thermal release tape on the protection layer; and separating the hBN film from the copper layer. Original
1 8. The method of claim 1 5 further comprising: depositing a polycrystalline copper layer; and performing an annealing process to convert the polycrystalline copper layer into the copper layer having the single-crystalline structure. Previously presented
The method of claim 1 8, wherein the annealing process is performed at a temperature in a range between 500° C and 1,1oo 0 C. Previously presented
The method of claim 1 5, wherein the first single-crystalline hBN film is a mono-layer hBN film. Previously presented
The method of claim 1, wherein the depositing the copper layer comprises sputtering copper from a copper target, with the sputtered copper being deposited on the first substrate. Previously presented
The method of claim 1, wherein the annealing the copper layer is performed at a temperature in a range between 5oo 0 C and 1,1oo 0 C. New
Canceled
A method comprising: forming a single-crystalline copper layer on a first substrate; depositing a first single-crystalline hexagonal boron nitride (hBN) film over the single- crystalline copper layer; transferring the first single-crystalline hBN film onto a second substrate; forming a Transition Metal Dichalcogenide (TMD) layer over the first single-crystalline hBN film; transferring a second single-crystalline hBN film over the TMD layer; and forming a transistor comprising the TMD layer as a channel. Previously presented
10. The method of claim 9, wherein the forming the transistor comprises: forming a source/drain region over and contacting the second single-crystalline hBN film, wherein the source/drain region is physically separated from the TMD layer by the second single-crystalline hBN film. Original
11. The method of claim 9, wherein the forming the transistor comprises: forming a source/drain region having a first sidewall contacting a second sidewall of the second single-crystalline hBN film and a third sidewall of the TMD layer. Withdrawn
The method of claim 9, wherein the depositing the first single- crystalline hBN film is self-stopping, and the first single-crystalline hBN film is a mono-layer film. Previously presented
The method of claim 9, wherein the forming the single-crystalline copper layer comprises: depositing a polycrystalline copper layer; and performing an annealing process to convert the polycrystalline copper layer into the single-crystalline copper layer. Original
A method comprising: depositing a first single-crystalline hexagonal boron nitride (hBN) film over a copper layer, wherein the copper layer has a single-crystalline structure, with the first single-crystalline hBN film being deposited on a (111) surface of the copper layer; forming a protection layer over and contacting the first single-crystalline hBN film; performing an electrochemical delamination process to separate the first single- crystalline hBN film and the protection layer from the copper layer; adhering the first single-crystalline hBN film and the protection layer to a substrate, with the first single-crystalline hBN film contacting the substrate; and removing the protection layer from the first single-crystalline hBN film. Previously presented
The method of claim 15, wherein the copper layer has a thickness in a range between 4 00 nm and 6 00 nm. Previously presented
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
2D transistor
Materials described outside the worked examples.
copper (Cu) film
Cu
hexagonal boron nitride (hBN) film
BN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Figures 9 through 16 illustrate the cross-sectional views of intermediate stages in the formation of a transistor based on an hBN film in accordance with some embodiments.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
copper film thickness | 400–600 nm | Cu |
annealing temperature for Cu polycrystalline to single-crystalline conversion | 500–1100 °C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,289,582Patent drawings and their descriptions. Click a drawing to enlarge it.
Figures 1 through 3 illustrate the perspective views of intermediate stages in the formation of a hexagonal boron nitride (hBN) film in accordance with some embodiments.
Figures 4 through 8 illustrate the perspective views of intermediate stages in the transferring of an hBN film in accordance with some embodiments.
Figures 9 through 16 illustrate the cross-sectional views of intermediate stages in the formation of a transistor based on an hBN film in accordance with some embodiments.
Figure 17 schematically illustrates a mono-layer of a Transition Metal Dichalcogenide (TMD) in accordance with some embodiments.
Figure 18 illustrates a process flow for forming an hBN film and a transistor based on the hBN film in accordance with some embodiments. CLEAN COPY
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method comprising: depositing a copper layer over a first substrate, wherein the copper layer is deposited to have a polycrystalline structure; annealing the copper layer, wherein after the annealing, the polycr y stalline structure is converted into a single-crystalline structure; depositing a hexagonal boron nitride (hBN) film on the copper layer; and removing the hBN film from the copper layer. Currently amended
The method of claim 1, wherein the copper layer is deposited to have a (111) surface plane. Original
The method of claim 1, wherein the annealing is performed with the copper layer facing down, and with the first substrate being over the copper layer. Original
The method of claim 1, wherein the removing the hBN film from the copper layer comprises: forming a protection layer over and contacting the hBN film; forming a thermal release tape on the protection layer; and separating the hBN film from the copper layer. Original
1 8. The method of claim 1 5 further comprising: depositing a polycrystalline copper layer; and performing an annealing process to convert the polycrystalline copper layer into the copper layer having the single-crystalline structure. Previously presented
The method of claim 1 8, wherein the annealing process is performed at a temperature in a range between 500° C and 1,1oo 0 C. Previously presented
The method of claim 1 5, wherein the first single-crystalline hBN film is a mono-layer hBN film. Previously presented
The method of claim 1, wherein the depositing the copper layer comprises sputtering copper from a copper target, with the sputtered copper being deposited on the first substrate. Previously presented
The method of claim 1, wherein the annealing the copper layer is performed at a temperature in a range between 5oo 0 C and 1,1oo 0 C. New
Canceled
A method comprising: forming a single-crystalline copper layer on a first substrate; depositing a first single-crystalline hexagonal boron nitride (hBN) film over the single- crystalline copper layer; transferring the first single-crystalline hBN film onto a second substrate; forming a Transition Metal Dichalcogenide (TMD) layer over the first single-crystalline hBN film; transferring a second single-crystalline hBN film over the TMD layer; and forming a transistor comprising the TMD layer as a channel. Previously presented
10. The method of claim 9, wherein the forming the transistor comprises: forming a source/drain region over and contacting the second single-crystalline hBN film, wherein the source/drain region is physically separated from the TMD layer by the second single-crystalline hBN film. Original
11. The method of claim 9, wherein the forming the transistor comprises: forming a source/drain region having a first sidewall contacting a second sidewall of the second single-crystalline hBN film and a third sidewall of the TMD layer. Withdrawn
The method of claim 9, wherein the depositing the first single- crystalline hBN film is self-stopping, and the first single-crystalline hBN film is a mono-layer film. Previously presented
The method of claim 9, wherein the forming the single-crystalline copper layer comprises: depositing a polycrystalline copper layer; and performing an annealing process to convert the polycrystalline copper layer into the single-crystalline copper layer. Original
A method comprising: depositing a first single-crystalline hexagonal boron nitride (hBN) film over a copper layer, wherein the copper layer has a single-crystalline structure, with the first single-crystalline hBN film being deposited on a (111) surface of the copper layer; forming a protection layer over and contacting the first single-crystalline hBN film; performing an electrochemical delamination process to separate the first single- crystalline hBN film and the protection layer from the copper layer; adhering the first single-crystalline hBN film and the protection layer to a substrate, with the first single-crystalline hBN film contacting the substrate; and removing the protection layer from the first single-crystalline hBN film. Previously presented
The method of claim 15, wherein the copper layer has a thickness in a range between 4 00 nm and 6 00 nm. Previously presented
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
2D transistor
Materials described outside the worked examples.
copper (Cu) film
Cu
hexagonal boron nitride (hBN) film
BN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Figures 9 through 16 illustrate the cross-sectional views of intermediate stages in the formation of a transistor based on an hBN film in accordance with some embodiments.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
copper film thickness | 400–600 nm | Cu |
annealing temperature for Cu polycrystalline to single-crystalline conversion | 500–1100 °C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,289,582Patent drawings and their descriptions. Click a drawing to enlarge it.
Figures 1 through 3 illustrate the perspective views of intermediate stages in the formation of a hexagonal boron nitride (hBN) film in accordance with some embodiments.
Figures 4 through 8 illustrate the perspective views of intermediate stages in the transferring of an hBN film in accordance with some embodiments.
Figures 9 through 16 illustrate the cross-sectional views of intermediate stages in the formation of a transistor based on an hBN film in accordance with some embodiments.
Figure 17 schematically illustrates a mono-layer of a Transition Metal Dichalcogenide (TMD) in accordance with some embodiments.
Figure 18 illustrates a process flow for forming an hBN film and a transistor based on the hBN film in accordance with some embodiments. CLEAN COPY
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method comprising: depositing a copper layer over a first substrate, wherein the copper layer is deposited to have a polycrystalline structure; annealing the copper layer, wherein after the annealing, the polycr y stalline structure is converted into a single-crystalline structure; depositing a hexagonal boron nitride (hBN) film on the copper layer; and removing the hBN film from the copper layer. Currently amended
The method of claim 1, wherein the copper layer is deposited to have a (111) surface plane. Original
The method of claim 1, wherein the annealing is performed with the copper layer facing down, and with the first substrate being over the copper layer. Original
The method of claim 1, wherein the removing the hBN film from the copper layer comprises: forming a protection layer over and contacting the hBN film; forming a thermal release tape on the protection layer; and separating the hBN film from the copper layer. Original
1 8. The method of claim 1 5 further comprising: depositing a polycrystalline copper layer; and performing an annealing process to convert the polycrystalline copper layer into the copper layer having the single-crystalline structure. Previously presented
The method of claim 1 8, wherein the annealing process is performed at a temperature in a range between 500° C and 1,1oo 0 C. Previously presented
The method of claim 1 5, wherein the first single-crystalline hBN film is a mono-layer hBN film. Previously presented
The method of claim 1, wherein the depositing the copper layer comprises sputtering copper from a copper target, with the sputtered copper being deposited on the first substrate. Previously presented
The method of claim 1, wherein the annealing the copper layer is performed at a temperature in a range between 5oo 0 C and 1,1oo 0 C. New
Canceled
A method comprising: forming a single-crystalline copper layer on a first substrate; depositing a first single-crystalline hexagonal boron nitride (hBN) film over the single- crystalline copper layer; transferring the first single-crystalline hBN film onto a second substrate; forming a Transition Metal Dichalcogenide (TMD) layer over the first single-crystalline hBN film; transferring a second single-crystalline hBN film over the TMD layer; and forming a transistor comprising the TMD layer as a channel. Previously presented
10. The method of claim 9, wherein the forming the transistor comprises: forming a source/drain region over and contacting the second single-crystalline hBN film, wherein the source/drain region is physically separated from the TMD layer by the second single-crystalline hBN film. Original
11. The method of claim 9, wherein the forming the transistor comprises: forming a source/drain region having a first sidewall contacting a second sidewall of the second single-crystalline hBN film and a third sidewall of the TMD layer. Withdrawn
The method of claim 9, wherein the depositing the first single- crystalline hBN film is self-stopping, and the first single-crystalline hBN film is a mono-layer film. Previously presented
The method of claim 9, wherein the forming the single-crystalline copper layer comprises: depositing a polycrystalline copper layer; and performing an annealing process to convert the polycrystalline copper layer into the single-crystalline copper layer. Original
A method comprising: depositing a first single-crystalline hexagonal boron nitride (hBN) film over a copper layer, wherein the copper layer has a single-crystalline structure, with the first single-crystalline hBN film being deposited on a (111) surface of the copper layer; forming a protection layer over and contacting the first single-crystalline hBN film; performing an electrochemical delamination process to separate the first single- crystalline hBN film and the protection layer from the copper layer; adhering the first single-crystalline hBN film and the protection layer to a substrate, with the first single-crystalline hBN film contacting the substrate; and removing the protection layer from the first single-crystalline hBN film. Previously presented
The method of claim 15, wherein the copper layer has a thickness in a range between 4 00 nm and 6 00 nm. Previously presented
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
2D transistor
Materials described outside the worked examples.
copper (Cu) film
Cu
hexagonal boron nitride (hBN) film
BN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Figures 9 through 16 illustrate the cross-sectional views of intermediate stages in the formation of a transistor based on an hBN film in accordance with some embodiments.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
copper film thickness | 400–600 nm | Cu |
annealing temperature for Cu polycrystalline to single-crystalline conversion | 500–1100 °C |
Related documents with shared materials, methods, properties, or citations.
Transition Metal Dichalcogenide (TMD) layer
sapphire substrate
Al₂O₃
Figure 18 illustrates a process flow for forming an hBN film and a transistor based on the hBN film in accordance with some embodiments. CLEAN COPY
Pressure | 0.05–3 mTorr | — |
Thickness | 0.05–5 nm | — |
Pressure | 1–500 Torr | — |
Temperature | 900–1100 °C | — |
Pressure | 0.1–760 Torr | — |
Duration | 10–480 minutes | — |
Temperature | 900–1080 °C | — |
Temperature | 60–130 °C | — |
Duration | 5–180 minutes | — |
Voltage | 1–10 V | — |
Voltage | 3–5 V | — |
Temperature | 160–200 °C | — |
Duration | 30–50 minutes | — |
Temperature | 30–100 °C | — |
Thickness | 0.5–5 nm | — |
Temperature | 600–700 °C | — |
Transition Metal Dichalcogenide (TMD) layer
sapphire substrate
Al₂O₃
Figure 18 illustrates a process flow for forming an hBN film and a transistor based on the hBN film in accordance with some embodiments. CLEAN COPY
Pressure | 0.05–3 mTorr | — |
Thickness | 0.05–5 nm | — |
Pressure | 1–500 Torr | — |
Temperature | 900–1100 °C | — |
Pressure | 0.1–760 Torr | — |
Duration | 10–480 minutes | — |
Temperature | 900–1080 °C | — |
Temperature | 60–130 °C | — |
Duration | 5–180 minutes | — |
Voltage | 1–10 V | — |
Voltage | 3–5 V | — |
Temperature | 160–200 °C | — |
Duration | 30–50 minutes | — |
Temperature | 30–100 °C | — |
Thickness | 0.5–5 nm | — |
Temperature | 600–700 °C | — |
Transition Metal Dichalcogenide (TMD) layer
sapphire substrate
Al₂O₃
Figure 18 illustrates a process flow for forming an hBN film and a transistor based on the hBN film in accordance with some embodiments. CLEAN COPY
Pressure | 0.05–3 mTorr | — |
Thickness | 0.05–5 nm | — |
Pressure | 1–500 Torr | — |
Temperature | 900–1100 °C | — |
Pressure | 0.1–760 Torr | — |
Duration | 10–480 minutes | — |
Temperature | 900–1080 °C | — |
Temperature | 60–130 °C | — |
Duration | 5–180 minutes | — |
Voltage | 1–10 V | — |
Voltage | 3–5 V | — |
Temperature | 160–200 °C | — |
Duration | 30–50 minutes | — |
Temperature | 30–100 °C | — |
Thickness | 0.5–5 nm | — |
Temperature | 600–700 °C | — |
Transition Metal Dichalcogenide (TMD) layer
sapphire substrate
Al₂O₃
Figure 18 illustrates a process flow for forming an hBN film and a transistor based on the hBN film in accordance with some embodiments. CLEAN COPY
Pressure | 0.05–3 mTorr | — |
Thickness | 0.05–5 nm | — |
Pressure | 1–500 Torr | — |
Temperature | 900–1100 °C | — |
Pressure | 0.1–760 Torr | — |
Duration | 10–480 minutes | — |
Temperature | 900–1080 °C | — |
Temperature | 60–130 °C | — |
Duration | 5–180 minutes | — |
Voltage | 1–10 V | — |
Voltage | 3–5 V | — |
Temperature | 160–200 °C | — |
Duration | 30–50 minutes | — |
Temperature | 30–100 °C | — |
Thickness | 0.5–5 nm | — |
Temperature | 600–700 °C | — |