Patent
US 10,680,403BULK DIRECT GAP MoS₂ BY PLASMA INDUCED LAYER DECOUPLING
Stephen B. Cronin
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,680,403Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1(c) illu s trate s photoluminescence spectra before and after oxygen plasma treatment, plotted on different Y scales, highlighting the blue shift of the A …
FIG. 2 illu s trate s AFM (height) images of a MoS₂ flake taken (a) before and (b) after a 3 minute oxygen plasma treatment (Plotted on different color scales). …
FIG. 3 illu s trate s an o ptical micr os cope image of a few layer MoS₂ flake (a) before and (b) after 3 minutes of oxygen plasma treatment.
FIG. 4(b) illustrates direct gap (solid) and indirect gap (dotted) energy transitions for 2L, 3L and 4L MoS₂ for a range of increases in the vdW gap (Ad vdw). …
FIGS. 5(a) and 5(b) illustrate different parts of a table that provides a list of PL peak positions and linewidths measured before and after oxygen plasma …
FIG. 6 is a table of Raman scattering peak position and width for the E 1 2g and A i g Raman modes for 17 flakes measured before and after optimized oxygen …
FIG. 7 illu s trate s AFM images taken before (a) and after (b) 3 minutes of oxygen plasma treatment for a flake of MoS₂ indicating a significant reduction in …
FIG. 8 shows the increa s e in flake thickne ss for 12 different many-layer MoS₂ flakes. [0019]
FIG. 9 illu s trate s co rrelati on o f the obs erved PL enhancement with the relative increase in interlayer separation (A h/h) showing trend lines …
FIG. 10(e) illu s trate s the s hift o f the pla smo n l oss peak is pl o tted as a function of the oxygen plasma exposure time.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Currently A m ended) A m etal dichalcogenide (T MDC) co m prising: metal dichalcogenide f lakes having monolayers with oxygen disposed within int e rlayers thereo f: with an increased int e rlayer separation of at least 0. 5 angstro m m ore than its bulk value such that the metal dichalcog e nide has a bulk direct band gap whe rein th e metal dic h alcog e nid e f lak e s ha ve 4 to 15 metal dic h alc oge nid e mono laye rs. Currently amended
6. (Currently A m ended) The T MDC of claim 1 wherein the F MDC is a bulk direct band gap tungsten. diselenide (WS e -. Currently amended
A d e vice comprising th e TMDC of claim 1. Original
The T MDC of clai m 1 wherein the T MDC is a bulk direct band gap molybdenu m disul fi de (MoS -). Original
(Curr e ntly A m ended) T he TMDC of claim 2 whe rein th e incr ease d int c rlayer se paration is at le ast 1 angstro m. Currently amended
(Currently A m ended) The T MDC of claim 2 wh e rein the increased int e rlayer separation is at least 3 angstro m. Currently amended
Canceled
8. The device of clai m 7 wherein the device is an opto e lectronic d ev ice. Original
The device of claim 8 wherein the optoelec t ronic device is a solid state laser. Original
T he de vice of claim 8 whc rein the optoelectronic d e vice is a solar cell. Original
T he de vice of claim 8 whc rein the opto e lectronic d ev ice is a FET. Original
Ihe device of claim S wherein the optoelectronic device is an LED. Original
1 1. T he de vice of clai m whc rein th e opto ele ctronic d e vice is a photodetector. Original
T he de vice of clai m 8 whc rein the optoel e ctronic de vice is a thermoel e ctric g e nerator. Original
Ihe device of clai m S wh e rein the optoelectronic device is a thermoelectric cooler. Original
16-20.. Canceled
Canceled
A m etal dichalcogenid e (T MDC) co m prising: metal dichalcogenide flak e s having monolayers with oxygen disposed within int e rlayers ther eof, with an incr ease d interlay c r s e paration of l at l e ast 0.5 angstrom m ore than its bulk value such that the metal dichalcogenide has a bulk direct band gap whc rein th e TMDC is a bulk dir ect band gap m olybd e num disul lide (MoS-) and whc rein the incr ease d int e rla ye r s e paration is at least 3 angstrom. New
The 1 MDC of claim 21 w herein the m etal dichalco g enide flakes have 4 to 15 m e tal dichalcog c nid c monolay e rs. New
A device co m prising the T MDC of clai m 21. New
(N e w) Th e de vicc of claim 23 wherein thc device is an opto clcct ronic d e vice. New
T he devic e of clai m 24 wherc in the opto clc ctronic d e vice is a pho todetector. New
(N e w) Th e devic e of clai m 24 wherc in the optoc lc ctronic d e vice is a thermoel e ctric cooler. New
A m e tal dichalcogenid e (TMDC) comprising: metal dic h alcogenide f lak e s having monolay c rs with oxyg e n disposed within interlayers ther eof, with an incr ease d interlay e r s e paration of l at le ast 0.5 angstrom m ore than its bulk value such that the m eta l d ic halco geni de has a bulk direct band g ap wherein the FM DC is a bulk direct band gap t u ngst e n dis e lenide (WSe-). New
(N ew) The T NI DC of claim 32 wherein the metal dic h alco g enide flakes ha v e 4 to metal dichalco g enide monola y ers. New
A device comprising the T MDC of claim 32. New
(N ew) The device of clai m 34 wherein the device is an opto ele ctronic de vi ce. New
The device of claim 35 wherein the opto ele ctronic device is an I.ED. New
F he device of ' claim 35 wherein the optoelectronic device is a solid state laser. New
The d e vic e of claim 35 wherein the opto ele ctronic d e vic e is a photodetector. New
(Ne w) [he device of claim 35 wherein the opto elect ronic device is a solar cell. New
(N e w) The d e vic e of claim 35 wherein the opto cle ctronic d cx ice is a F ET. New
The device o l claim 35 wherein the opto ele ctronic device is a thermoelectric g enerator. New
(N e w) The d e vic e of claim 35 wherein the optoelectronic d evice is a thermoelectric cooler. New
Layer stacks claimed or described, ordered top of device to substrate.
device comprising TMDC
optoelectronic device comprising TMDC
LED comprising TMDC
solid state laser comprising TMDC
Materials described outside the worked examples.
metal dichalcogenide (TMDC) with oxygen intercalation and increased interlayer separation
molybdenum disulfide
MoS₂
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1(c) illu s trate s photoluminescence spectra before and after oxygen plasma treatment, plotted on different Y scales, highlighting the blue shift of the A …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
PL peak position before O2 plasma treatment | 1.81–1.83 eV | MoS₂ |
PL peak position after O2 plasma treatment | 1.86 eV |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,680,403Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1(c) illu s trate s photoluminescence spectra before and after oxygen plasma treatment, plotted on different Y scales, highlighting the blue shift of the A …
FIG. 2 illu s trate s AFM (height) images of a MoS₂ flake taken (a) before and (b) after a 3 minute oxygen plasma treatment (Plotted on different color scales). …
FIG. 3 illu s trate s an o ptical micr os cope image of a few layer MoS₂ flake (a) before and (b) after 3 minutes of oxygen plasma treatment.
FIG. 4(b) illustrates direct gap (solid) and indirect gap (dotted) energy transitions for 2L, 3L and 4L MoS₂ for a range of increases in the vdW gap (Ad vdw). …
FIGS. 5(a) and 5(b) illustrate different parts of a table that provides a list of PL peak positions and linewidths measured before and after oxygen plasma …
FIG. 6 is a table of Raman scattering peak position and width for the E 1 2g and A i g Raman modes for 17 flakes measured before and after optimized oxygen …
FIG. 7 illu s trate s AFM images taken before (a) and after (b) 3 minutes of oxygen plasma treatment for a flake of MoS₂ indicating a significant reduction in …
FIG. 8 shows the increa s e in flake thickne ss for 12 different many-layer MoS₂ flakes. [0019]
FIG. 9 illu s trate s co rrelati on o f the obs erved PL enhancement with the relative increase in interlayer separation (A h/h) showing trend lines …
FIG. 10(e) illu s trate s the s hift o f the pla smo n l oss peak is pl o tted as a function of the oxygen plasma exposure time.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Currently A m ended) A m etal dichalcogenide (T MDC) co m prising: metal dichalcogenide f lakes having monolayers with oxygen disposed within int e rlayers thereo f: with an increased int e rlayer separation of at least 0. 5 angstro m m ore than its bulk value such that the metal dichalcog e nide has a bulk direct band gap whe rein th e metal dic h alcog e nid e f lak e s ha ve 4 to 15 metal dic h alc oge nid e mono laye rs. Currently amended
6. (Currently A m ended) The T MDC of claim 1 wherein the F MDC is a bulk direct band gap tungsten. diselenide (WS e -. Currently amended
A d e vice comprising th e TMDC of claim 1. Original
The T MDC of clai m 1 wherein the T MDC is a bulk direct band gap molybdenu m disul fi de (MoS -). Original
(Curr e ntly A m ended) T he TMDC of claim 2 whe rein th e incr ease d int c rlayer se paration is at le ast 1 angstro m. Currently amended
(Currently A m ended) The T MDC of claim 2 wh e rein the increased int e rlayer separation is at least 3 angstro m. Currently amended
Canceled
8. The device of clai m 7 wherein the device is an opto e lectronic d ev ice. Original
The device of claim 8 wherein the optoelec t ronic device is a solid state laser. Original
T he de vice of claim 8 whc rein the optoelectronic d e vice is a solar cell. Original
T he de vice of claim 8 whc rein the opto e lectronic d ev ice is a FET. Original
Ihe device of claim S wherein the optoelectronic device is an LED. Original
1 1. T he de vice of clai m whc rein th e opto ele ctronic d e vice is a photodetector. Original
T he de vice of clai m 8 whc rein the optoel e ctronic de vice is a thermoel e ctric g e nerator. Original
Ihe device of clai m S wh e rein the optoelectronic device is a thermoelectric cooler. Original
16-20.. Canceled
Canceled
A m etal dichalcogenid e (T MDC) co m prising: metal dichalcogenide flak e s having monolayers with oxygen disposed within int e rlayers ther eof, with an incr ease d interlay c r s e paration of l at l e ast 0.5 angstrom m ore than its bulk value such that the metal dichalcogenide has a bulk direct band gap whc rein th e TMDC is a bulk dir ect band gap m olybd e num disul lide (MoS-) and whc rein the incr ease d int e rla ye r s e paration is at least 3 angstrom. New
The 1 MDC of claim 21 w herein the m etal dichalco g enide flakes have 4 to 15 m e tal dichalcog c nid c monolay e rs. New
A device co m prising the T MDC of clai m 21. New
(N e w) Th e de vicc of claim 23 wherein thc device is an opto clcct ronic d e vice. New
T he devic e of clai m 24 wherc in the opto clc ctronic d e vice is a pho todetector. New
(N e w) Th e devic e of clai m 24 wherc in the optoc lc ctronic d e vice is a thermoel e ctric cooler. New
A m e tal dichalcogenid e (TMDC) comprising: metal dic h alcogenide f lak e s having monolay c rs with oxyg e n disposed within interlayers ther eof, with an incr ease d interlay e r s e paration of l at le ast 0.5 angstrom m ore than its bulk value such that the m eta l d ic halco geni de has a bulk direct band g ap wherein the FM DC is a bulk direct band gap t u ngst e n dis e lenide (WSe-). New
(N ew) The T NI DC of claim 32 wherein the metal dic h alco g enide flakes ha v e 4 to metal dichalco g enide monola y ers. New
A device comprising the T MDC of claim 32. New
(N ew) The device of clai m 34 wherein the device is an opto ele ctronic de vi ce. New
The device of claim 35 wherein the opto ele ctronic device is an I.ED. New
F he device of ' claim 35 wherein the optoelectronic device is a solid state laser. New
The d e vic e of claim 35 wherein the opto ele ctronic d e vic e is a photodetector. New
(Ne w) [he device of claim 35 wherein the opto elect ronic device is a solar cell. New
(N e w) The d e vic e of claim 35 wherein the opto cle ctronic d cx ice is a F ET. New
The device o l claim 35 wherein the opto ele ctronic device is a thermoelectric g enerator. New
(N e w) The d e vic e of claim 35 wherein the optoelectronic d evice is a thermoelectric cooler. New
Layer stacks claimed or described, ordered top of device to substrate.
device comprising TMDC
optoelectronic device comprising TMDC
LED comprising TMDC
solid state laser comprising TMDC
Materials described outside the worked examples.
metal dichalcogenide (TMDC) with oxygen intercalation and increased interlayer separation
molybdenum disulfide
MoS₂
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1(c) illu s trate s photoluminescence spectra before and after oxygen plasma treatment, plotted on different Y scales, highlighting the blue shift of the A …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
PL peak position before O2 plasma treatment | 1.81–1.83 eV | MoS₂ |
PL peak position after O2 plasma treatment | 1.86 eV |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,680,403Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1(c) illu s trate s photoluminescence spectra before and after oxygen plasma treatment, plotted on different Y scales, highlighting the blue shift of the A …
FIG. 2 illu s trate s AFM (height) images of a MoS₂ flake taken (a) before and (b) after a 3 minute oxygen plasma treatment (Plotted on different color scales). …
FIG. 3 illu s trate s an o ptical micr os cope image of a few layer MoS₂ flake (a) before and (b) after 3 minutes of oxygen plasma treatment.
FIG. 4(b) illustrates direct gap (solid) and indirect gap (dotted) energy transitions for 2L, 3L and 4L MoS₂ for a range of increases in the vdW gap (Ad vdw). …
FIGS. 5(a) and 5(b) illustrate different parts of a table that provides a list of PL peak positions and linewidths measured before and after oxygen plasma …
FIG. 6 is a table of Raman scattering peak position and width for the E 1 2g and A i g Raman modes for 17 flakes measured before and after optimized oxygen …
FIG. 7 illu s trate s AFM images taken before (a) and after (b) 3 minutes of oxygen plasma treatment for a flake of MoS₂ indicating a significant reduction in …
FIG. 8 shows the increa s e in flake thickne ss for 12 different many-layer MoS₂ flakes. [0019]
FIG. 9 illu s trate s co rrelati on o f the obs erved PL enhancement with the relative increase in interlayer separation (A h/h) showing trend lines …
FIG. 10(e) illu s trate s the s hift o f the pla smo n l oss peak is pl o tted as a function of the oxygen plasma exposure time.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Currently A m ended) A m etal dichalcogenide (T MDC) co m prising: metal dichalcogenide f lakes having monolayers with oxygen disposed within int e rlayers thereo f: with an increased int e rlayer separation of at least 0. 5 angstro m m ore than its bulk value such that the metal dichalcog e nide has a bulk direct band gap whe rein th e metal dic h alcog e nid e f lak e s ha ve 4 to 15 metal dic h alc oge nid e mono laye rs. Currently amended
6. (Currently A m ended) The T MDC of claim 1 wherein the F MDC is a bulk direct band gap tungsten. diselenide (WS e -. Currently amended
A d e vice comprising th e TMDC of claim 1. Original
The T MDC of clai m 1 wherein the T MDC is a bulk direct band gap molybdenu m disul fi de (MoS -). Original
(Curr e ntly A m ended) T he TMDC of claim 2 whe rein th e incr ease d int c rlayer se paration is at le ast 1 angstro m. Currently amended
(Currently A m ended) The T MDC of claim 2 wh e rein the increased int e rlayer separation is at least 3 angstro m. Currently amended
Canceled
8. The device of clai m 7 wherein the device is an opto e lectronic d ev ice. Original
The device of claim 8 wherein the optoelec t ronic device is a solid state laser. Original
T he de vice of claim 8 whc rein the optoelectronic d e vice is a solar cell. Original
T he de vice of claim 8 whc rein the opto e lectronic d ev ice is a FET. Original
Ihe device of claim S wherein the optoelectronic device is an LED. Original
1 1. T he de vice of clai m whc rein th e opto ele ctronic d e vice is a photodetector. Original
T he de vice of clai m 8 whc rein the optoel e ctronic de vice is a thermoel e ctric g e nerator. Original
Ihe device of clai m S wh e rein the optoelectronic device is a thermoelectric cooler. Original
16-20.. Canceled
Canceled
A m etal dichalcogenid e (T MDC) co m prising: metal dichalcogenide flak e s having monolayers with oxygen disposed within int e rlayers ther eof, with an incr ease d interlay c r s e paration of l at l e ast 0.5 angstrom m ore than its bulk value such that the metal dichalcogenide has a bulk direct band gap whc rein th e TMDC is a bulk dir ect band gap m olybd e num disul lide (MoS-) and whc rein the incr ease d int e rla ye r s e paration is at least 3 angstrom. New
The 1 MDC of claim 21 w herein the m etal dichalco g enide flakes have 4 to 15 m e tal dichalcog c nid c monolay e rs. New
A device co m prising the T MDC of clai m 21. New
(N e w) Th e de vicc of claim 23 wherein thc device is an opto clcct ronic d e vice. New
T he devic e of clai m 24 wherc in the opto clc ctronic d e vice is a pho todetector. New
(N e w) Th e devic e of clai m 24 wherc in the optoc lc ctronic d e vice is a thermoel e ctric cooler. New
A m e tal dichalcogenid e (TMDC) comprising: metal dic h alcogenide f lak e s having monolay c rs with oxyg e n disposed within interlayers ther eof, with an incr ease d interlay e r s e paration of l at le ast 0.5 angstrom m ore than its bulk value such that the m eta l d ic halco geni de has a bulk direct band g ap wherein the FM DC is a bulk direct band gap t u ngst e n dis e lenide (WSe-). New
(N ew) The T NI DC of claim 32 wherein the metal dic h alco g enide flakes ha v e 4 to metal dichalco g enide monola y ers. New
A device comprising the T MDC of claim 32. New
(N ew) The device of clai m 34 wherein the device is an opto ele ctronic de vi ce. New
The device of claim 35 wherein the opto ele ctronic device is an I.ED. New
F he device of ' claim 35 wherein the optoelectronic device is a solid state laser. New
The d e vic e of claim 35 wherein the opto ele ctronic d e vic e is a photodetector. New
(Ne w) [he device of claim 35 wherein the opto elect ronic device is a solar cell. New
(N e w) The d e vic e of claim 35 wherein the opto cle ctronic d cx ice is a F ET. New
The device o l claim 35 wherein the opto ele ctronic device is a thermoelectric g enerator. New
(N e w) The d e vic e of claim 35 wherein the optoelectronic d evice is a thermoelectric cooler. New
Layer stacks claimed or described, ordered top of device to substrate.
device comprising TMDC
optoelectronic device comprising TMDC
LED comprising TMDC
solid state laser comprising TMDC
Materials described outside the worked examples.
metal dichalcogenide (TMDC) with oxygen intercalation and increased interlayer separation
molybdenum disulfide
MoS₂
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1(c) illu s trate s photoluminescence spectra before and after oxygen plasma treatment, plotted on different Y scales, highlighting the blue shift of the A …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
PL peak position before O2 plasma treatment | 1.81–1.83 eV | MoS₂ |
PL peak position after O2 plasma treatment | 1.86 eV |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,680,403Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1(c) illu s trate s photoluminescence spectra before and after oxygen plasma treatment, plotted on different Y scales, highlighting the blue shift of the A …
FIG. 2 illu s trate s AFM (height) images of a MoS₂ flake taken (a) before and (b) after a 3 minute oxygen plasma treatment (Plotted on different color scales). …
FIG. 3 illu s trate s an o ptical micr os cope image of a few layer MoS₂ flake (a) before and (b) after 3 minutes of oxygen plasma treatment.
FIG. 4(b) illustrates direct gap (solid) and indirect gap (dotted) energy transitions for 2L, 3L and 4L MoS₂ for a range of increases in the vdW gap (Ad vdw). …
FIGS. 5(a) and 5(b) illustrate different parts of a table that provides a list of PL peak positions and linewidths measured before and after oxygen plasma …
FIG. 6 is a table of Raman scattering peak position and width for the E 1 2g and A i g Raman modes for 17 flakes measured before and after optimized oxygen …
FIG. 7 illu s trate s AFM images taken before (a) and after (b) 3 minutes of oxygen plasma treatment for a flake of MoS₂ indicating a significant reduction in …
FIG. 8 shows the increa s e in flake thickne ss for 12 different many-layer MoS₂ flakes. [0019]
FIG. 9 illu s trate s co rrelati on o f the obs erved PL enhancement with the relative increase in interlayer separation (A h/h) showing trend lines …
FIG. 10(e) illu s trate s the s hift o f the pla smo n l oss peak is pl o tted as a function of the oxygen plasma exposure time.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Currently A m ended) A m etal dichalcogenide (T MDC) co m prising: metal dichalcogenide f lakes having monolayers with oxygen disposed within int e rlayers thereo f: with an increased int e rlayer separation of at least 0. 5 angstro m m ore than its bulk value such that the metal dichalcog e nide has a bulk direct band gap whe rein th e metal dic h alcog e nid e f lak e s ha ve 4 to 15 metal dic h alc oge nid e mono laye rs. Currently amended
6. (Currently A m ended) The T MDC of claim 1 wherein the F MDC is a bulk direct band gap tungsten. diselenide (WS e -. Currently amended
A d e vice comprising th e TMDC of claim 1. Original
The T MDC of clai m 1 wherein the T MDC is a bulk direct band gap molybdenu m disul fi de (MoS -). Original
(Curr e ntly A m ended) T he TMDC of claim 2 whe rein th e incr ease d int c rlayer se paration is at le ast 1 angstro m. Currently amended
(Currently A m ended) The T MDC of claim 2 wh e rein the increased int e rlayer separation is at least 3 angstro m. Currently amended
Canceled
8. The device of clai m 7 wherein the device is an opto e lectronic d ev ice. Original
The device of claim 8 wherein the optoelec t ronic device is a solid state laser. Original
T he de vice of claim 8 whc rein the optoelectronic d e vice is a solar cell. Original
T he de vice of claim 8 whc rein the opto e lectronic d ev ice is a FET. Original
Ihe device of claim S wherein the optoelectronic device is an LED. Original
1 1. T he de vice of clai m whc rein th e opto ele ctronic d e vice is a photodetector. Original
T he de vice of clai m 8 whc rein the optoel e ctronic de vice is a thermoel e ctric g e nerator. Original
Ihe device of clai m S wh e rein the optoelectronic device is a thermoelectric cooler. Original
16-20.. Canceled
Canceled
A m etal dichalcogenid e (T MDC) co m prising: metal dichalcogenide flak e s having monolayers with oxygen disposed within int e rlayers ther eof, with an incr ease d interlay c r s e paration of l at l e ast 0.5 angstrom m ore than its bulk value such that the metal dichalcogenide has a bulk direct band gap whc rein th e TMDC is a bulk dir ect band gap m olybd e num disul lide (MoS-) and whc rein the incr ease d int e rla ye r s e paration is at least 3 angstrom. New
The 1 MDC of claim 21 w herein the m etal dichalco g enide flakes have 4 to 15 m e tal dichalcog c nid c monolay e rs. New
A device co m prising the T MDC of clai m 21. New
(N e w) Th e de vicc of claim 23 wherein thc device is an opto clcct ronic d e vice. New
T he devic e of clai m 24 wherc in the opto clc ctronic d e vice is a pho todetector. New
(N e w) Th e devic e of clai m 24 wherc in the optoc lc ctronic d e vice is a thermoel e ctric cooler. New
A m e tal dichalcogenid e (TMDC) comprising: metal dic h alcogenide f lak e s having monolay c rs with oxyg e n disposed within interlayers ther eof, with an incr ease d interlay e r s e paration of l at le ast 0.5 angstrom m ore than its bulk value such that the m eta l d ic halco geni de has a bulk direct band g ap wherein the FM DC is a bulk direct band gap t u ngst e n dis e lenide (WSe-). New
(N ew) The T NI DC of claim 32 wherein the metal dic h alco g enide flakes ha v e 4 to metal dichalco g enide monola y ers. New
A device comprising the T MDC of claim 32. New
(N ew) The device of clai m 34 wherein the device is an opto ele ctronic de vi ce. New
The device of claim 35 wherein the opto ele ctronic device is an I.ED. New
F he device of ' claim 35 wherein the optoelectronic device is a solid state laser. New
The d e vic e of claim 35 wherein the opto ele ctronic d e vic e is a photodetector. New
(Ne w) [he device of claim 35 wherein the opto elect ronic device is a solar cell. New
(N e w) The d e vic e of claim 35 wherein the opto cle ctronic d cx ice is a F ET. New
The device o l claim 35 wherein the opto ele ctronic device is a thermoelectric g enerator. New
(N e w) The d e vic e of claim 35 wherein the optoelectronic d evice is a thermoelectric cooler. New
Layer stacks claimed or described, ordered top of device to substrate.
device comprising TMDC
optoelectronic device comprising TMDC
LED comprising TMDC
solid state laser comprising TMDC
Materials described outside the worked examples.
metal dichalcogenide (TMDC) with oxygen intercalation and increased interlayer separation
molybdenum disulfide
MoS₂
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1(c) illu s trate s photoluminescence spectra before and after oxygen plasma treatment, plotted on different Y scales, highlighting the blue shift of the A …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
PL peak position before O2 plasma treatment | 1.81–1.83 eV | MoS₂ |
PL peak position after O2 plasma treatment | 1.86 eV |
Related documents with shared materials, methods, properties, or citations.
photodetector comprising TMDC
solar cell comprising TMDC
FET comprising TMDC
thermoelectric generator comprising TMDC
thermoelectric cooler comprising TMDC
tungsten diselenide
WSe₂
FIG. 1(c) illu s trate s photoluminescence spectra before and after oxygen plasma treatment, plotted on different Y scales, highlighting the blue shift of the A …
FIG. 1(c) illu s trate s photoluminescence spectra before and after oxygen plasma treatment, plotted on different Y scales, highlighting the blue shift of the A …
FIG. 2 illu s trate s AFM (height) images of a MoS₂ flake taken (a) before and (b) after a 3 minute oxygen plasma treatment (Plotted on different color scales). …
FIGS. 5(a) and 5(b) illustrate different parts of a table that provides a list of PL peak positions and linewidths measured before and after oxygen plasma …
FIG. 6 is a table of Raman scattering peak position and width for the E 1 2g and A i g Raman modes for 17 flakes measured before and after optimized oxygen …
FIG. 7 illu s trate s AFM images taken before (a) and after (b) 3 minutes of oxygen plasma treatment for a flake of MoS₂ indicating a significant reduction in …
FIG. 9 illu s trate s co rrelati on o f the obs erved PL enhancement with the relative increase in interlayer separation (A h/h) showing trend lines …
FIG. 10(e) illu s trate s the s hift o f the pla smo n l oss peak is pl o tted as a function of the oxygen plasma exposure time.
MoS₂ |
PL peak blueshift after O2 plasma treatment | — | MoS₂ |
Average increase in van-der-Waals gap per layer after O2 plasma treatment (AFM-derived) | 1.5–1.8 angstrom | MoS₂ |
Thickness | 1–21.4 cm | — |
Thickness | 6–10 cm | — |
— | 1.81–1.86 eV | — |
— | 1.86–1.88 eV | — |
— | ≤ 0.01 eV | — |
Thickness | ≥ 3 Å | — |
photodetector comprising TMDC
solar cell comprising TMDC
FET comprising TMDC
thermoelectric generator comprising TMDC
thermoelectric cooler comprising TMDC
tungsten diselenide
WSe₂
FIG. 1(c) illu s trate s photoluminescence spectra before and after oxygen plasma treatment, plotted on different Y scales, highlighting the blue shift of the A …
FIG. 1(c) illu s trate s photoluminescence spectra before and after oxygen plasma treatment, plotted on different Y scales, highlighting the blue shift of the A …
FIG. 2 illu s trate s AFM (height) images of a MoS₂ flake taken (a) before and (b) after a 3 minute oxygen plasma treatment (Plotted on different color scales). …
FIGS. 5(a) and 5(b) illustrate different parts of a table that provides a list of PL peak positions and linewidths measured before and after oxygen plasma …
FIG. 6 is a table of Raman scattering peak position and width for the E 1 2g and A i g Raman modes for 17 flakes measured before and after optimized oxygen …
FIG. 7 illu s trate s AFM images taken before (a) and after (b) 3 minutes of oxygen plasma treatment for a flake of MoS₂ indicating a significant reduction in …
FIG. 9 illu s trate s co rrelati on o f the obs erved PL enhancement with the relative increase in interlayer separation (A h/h) showing trend lines …
FIG. 10(e) illu s trate s the s hift o f the pla smo n l oss peak is pl o tted as a function of the oxygen plasma exposure time.
MoS₂ |
PL peak blueshift after O2 plasma treatment | — | MoS₂ |
Average increase in van-der-Waals gap per layer after O2 plasma treatment (AFM-derived) | 1.5–1.8 angstrom | MoS₂ |
Thickness | 1–21.4 cm | — |
Thickness | 6–10 cm | — |
— | 1.81–1.86 eV | — |
— | 1.86–1.88 eV | — |
— | ≤ 0.01 eV | — |
Thickness | ≥ 3 Å | — |
photodetector comprising TMDC
solar cell comprising TMDC
FET comprising TMDC
thermoelectric generator comprising TMDC
thermoelectric cooler comprising TMDC
tungsten diselenide
WSe₂
FIG. 1(c) illu s trate s photoluminescence spectra before and after oxygen plasma treatment, plotted on different Y scales, highlighting the blue shift of the A …
FIG. 1(c) illu s trate s photoluminescence spectra before and after oxygen plasma treatment, plotted on different Y scales, highlighting the blue shift of the A …
FIG. 2 illu s trate s AFM (height) images of a MoS₂ flake taken (a) before and (b) after a 3 minute oxygen plasma treatment (Plotted on different color scales). …
FIGS. 5(a) and 5(b) illustrate different parts of a table that provides a list of PL peak positions and linewidths measured before and after oxygen plasma …
FIG. 6 is a table of Raman scattering peak position and width for the E 1 2g and A i g Raman modes for 17 flakes measured before and after optimized oxygen …
FIG. 7 illu s trate s AFM images taken before (a) and after (b) 3 minutes of oxygen plasma treatment for a flake of MoS₂ indicating a significant reduction in …
FIG. 9 illu s trate s co rrelati on o f the obs erved PL enhancement with the relative increase in interlayer separation (A h/h) showing trend lines …
FIG. 10(e) illu s trate s the s hift o f the pla smo n l oss peak is pl o tted as a function of the oxygen plasma exposure time.
MoS₂ |
PL peak blueshift after O2 plasma treatment | — | MoS₂ |
Average increase in van-der-Waals gap per layer after O2 plasma treatment (AFM-derived) | 1.5–1.8 angstrom | MoS₂ |
Thickness | 1–21.4 cm | — |
Thickness | 6–10 cm | — |
— | 1.81–1.86 eV | — |
— | 1.86–1.88 eV | — |
— | ≤ 0.01 eV | — |
Thickness | ≥ 3 Å | — |
photodetector comprising TMDC
solar cell comprising TMDC
FET comprising TMDC
thermoelectric generator comprising TMDC
thermoelectric cooler comprising TMDC
tungsten diselenide
WSe₂
FIG. 1(c) illu s trate s photoluminescence spectra before and after oxygen plasma treatment, plotted on different Y scales, highlighting the blue shift of the A …
FIG. 1(c) illu s trate s photoluminescence spectra before and after oxygen plasma treatment, plotted on different Y scales, highlighting the blue shift of the A …
FIG. 2 illu s trate s AFM (height) images of a MoS₂ flake taken (a) before and (b) after a 3 minute oxygen plasma treatment (Plotted on different color scales). …
FIGS. 5(a) and 5(b) illustrate different parts of a table that provides a list of PL peak positions and linewidths measured before and after oxygen plasma …
FIG. 6 is a table of Raman scattering peak position and width for the E 1 2g and A i g Raman modes for 17 flakes measured before and after optimized oxygen …
FIG. 7 illu s trate s AFM images taken before (a) and after (b) 3 minutes of oxygen plasma treatment for a flake of MoS₂ indicating a significant reduction in …
FIG. 9 illu s trate s co rrelati on o f the obs erved PL enhancement with the relative increase in interlayer separation (A h/h) showing trend lines …
FIG. 10(e) illu s trate s the s hift o f the pla smo n l oss peak is pl o tted as a function of the oxygen plasma exposure time.
MoS₂ |
PL peak blueshift after O2 plasma treatment | — | MoS₂ |
Average increase in van-der-Waals gap per layer after O2 plasma treatment (AFM-derived) | 1.5–1.8 angstrom | MoS₂ |
Thickness | 1–21.4 cm | — |
Thickness | 6–10 cm | — |
— | 1.81–1.86 eV | — |
— | 1.86–1.88 eV | — |
— | ≤ 0.01 eV | — |
Thickness | ≥ 3 Å | — |