Patent
US 9,917,255COMPOSITE OF GRAPHENE OXIDE AND NANOSTRUCTURES, METHODS OF MAKING AND APPLICATIONS OF SAME
Jiaxing Huang
US
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Patent
Atlas literature
Patent
US 9,917,255Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows (a) current density-voltage characteristics of P₃HT:PCBM solar cells with GO as the hole transporting layer (inset). A small change in the …
FIG. 2 shows addition of a small amount of SWCNTs into GO (GO:SWCNTs = 1:0.05, w/w) can increase, even prominently, the FF and Js c in devices fabricated with …
FIG. 3 shows SEM images of thin films deposited on ITO spin coated from (a) GO (about 0.15 wt %), (b) about 1:0.2 GO:SWCNTs and (c) about 1:0.5 GO:SWCNTs …
FIG. 4 shows (a) current density-voltage characteristics of devices made on 25 unmodified ITO (inverted triangle), with GO layer (open circle, spin coated from …
FIG. 5 shows schematically a cross-sectional view of a photovoltaic device according to one embodiment of the invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming a graphene oxide (GO) based layer used in a photovoltaic cell, comprising the steps of: (a) preparing a solution of GO by dispersing the GO in deionized water; (b) preparing a solution of nanostructures by dispersing the nanostructures in water; and (c) applying the solution of GO and the solution of nanostructures onto a surface of a substrate to form a GO based layer with the plurality of nanostructures, wherein a mass ratio of the GO and the nanostructures in the GO based la v er is in a range of about 1:0.01 w/w to 1:0.5 w/w. Currently amended
The method of claim 1, wherein the substrate is an indium tin oxide (I TO) layer. Original
The method of claim 1, wherein the nanostructures comprises carbon nanotubes, or nanofibers. Original
The method of claim 1, wherein the step of preparing the solution of nanostructures comprises the steps of: ultrasonicating a mixture formed by dispersing the nanostructures in water for a first period of time; and centrifugating the ultrasonicated mixture at a predetermined speed for a second period of time. Previously presented
The method of claim 1, wherein the step of applying the solution of GO and the solution of nanostructures onto the surface of the substrate comprises the steps of: (a) mixing the solution of GO and the solution of nanostructures to form a dispersion of the GO and the nanostructures; (b) spin coating the GO and nanostructures dispersion on the surface of the substrate to form a spin coated film of the GO and nanostructures dispersion thereon; and (c) thermally annealing the spin coated film to form the GO based layer. Original
. Canceled
10-31.. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
photovoltaic cell/polymer solar cell
Materials described outside the worked examples.
graphene oxide
nanostructures (functionalized with carboxylic acid groups)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 shows (a) current density-voltage characteristics of P₃HT:PCBM solar cells with GO as the hole transporting layer (inset). A small change in the …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.1–1000 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,917,255Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows (a) current density-voltage characteristics of P₃HT:PCBM solar cells with GO as the hole transporting layer (inset). A small change in the …
FIG. 2 shows addition of a small amount of SWCNTs into GO (GO:SWCNTs = 1:0.05, w/w) can increase, even prominently, the FF and Js c in devices fabricated with …
FIG. 3 shows SEM images of thin films deposited on ITO spin coated from (a) GO (about 0.15 wt %), (b) about 1:0.2 GO:SWCNTs and (c) about 1:0.5 GO:SWCNTs …
FIG. 4 shows (a) current density-voltage characteristics of devices made on 25 unmodified ITO (inverted triangle), with GO layer (open circle, spin coated from …
FIG. 5 shows schematically a cross-sectional view of a photovoltaic device according to one embodiment of the invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming a graphene oxide (GO) based layer used in a photovoltaic cell, comprising the steps of: (a) preparing a solution of GO by dispersing the GO in deionized water; (b) preparing a solution of nanostructures by dispersing the nanostructures in water; and (c) applying the solution of GO and the solution of nanostructures onto a surface of a substrate to form a GO based layer with the plurality of nanostructures, wherein a mass ratio of the GO and the nanostructures in the GO based la v er is in a range of about 1:0.01 w/w to 1:0.5 w/w. Currently amended
The method of claim 1, wherein the substrate is an indium tin oxide (I TO) layer. Original
The method of claim 1, wherein the nanostructures comprises carbon nanotubes, or nanofibers. Original
The method of claim 1, wherein the step of preparing the solution of nanostructures comprises the steps of: ultrasonicating a mixture formed by dispersing the nanostructures in water for a first period of time; and centrifugating the ultrasonicated mixture at a predetermined speed for a second period of time. Previously presented
The method of claim 1, wherein the step of applying the solution of GO and the solution of nanostructures onto the surface of the substrate comprises the steps of: (a) mixing the solution of GO and the solution of nanostructures to form a dispersion of the GO and the nanostructures; (b) spin coating the GO and nanostructures dispersion on the surface of the substrate to form a spin coated film of the GO and nanostructures dispersion thereon; and (c) thermally annealing the spin coated film to form the GO based layer. Original
. Canceled
10-31.. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
photovoltaic cell/polymer solar cell
Materials described outside the worked examples.
graphene oxide
nanostructures (functionalized with carboxylic acid groups)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 shows (a) current density-voltage characteristics of P₃HT:PCBM solar cells with GO as the hole transporting layer (inset). A small change in the …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.1–1000 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,917,255Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows (a) current density-voltage characteristics of P₃HT:PCBM solar cells with GO as the hole transporting layer (inset). A small change in the …
FIG. 2 shows addition of a small amount of SWCNTs into GO (GO:SWCNTs = 1:0.05, w/w) can increase, even prominently, the FF and Js c in devices fabricated with …
FIG. 3 shows SEM images of thin films deposited on ITO spin coated from (a) GO (about 0.15 wt %), (b) about 1:0.2 GO:SWCNTs and (c) about 1:0.5 GO:SWCNTs …
FIG. 4 shows (a) current density-voltage characteristics of devices made on 25 unmodified ITO (inverted triangle), with GO layer (open circle, spin coated from …
FIG. 5 shows schematically a cross-sectional view of a photovoltaic device according to one embodiment of the invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming a graphene oxide (GO) based layer used in a photovoltaic cell, comprising the steps of: (a) preparing a solution of GO by dispersing the GO in deionized water; (b) preparing a solution of nanostructures by dispersing the nanostructures in water; and (c) applying the solution of GO and the solution of nanostructures onto a surface of a substrate to form a GO based layer with the plurality of nanostructures, wherein a mass ratio of the GO and the nanostructures in the GO based la v er is in a range of about 1:0.01 w/w to 1:0.5 w/w. Currently amended
The method of claim 1, wherein the substrate is an indium tin oxide (I TO) layer. Original
The method of claim 1, wherein the nanostructures comprises carbon nanotubes, or nanofibers. Original
The method of claim 1, wherein the step of preparing the solution of nanostructures comprises the steps of: ultrasonicating a mixture formed by dispersing the nanostructures in water for a first period of time; and centrifugating the ultrasonicated mixture at a predetermined speed for a second period of time. Previously presented
The method of claim 1, wherein the step of applying the solution of GO and the solution of nanostructures onto the surface of the substrate comprises the steps of: (a) mixing the solution of GO and the solution of nanostructures to form a dispersion of the GO and the nanostructures; (b) spin coating the GO and nanostructures dispersion on the surface of the substrate to form a spin coated film of the GO and nanostructures dispersion thereon; and (c) thermally annealing the spin coated film to form the GO based layer. Original
. Canceled
10-31.. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
photovoltaic cell/polymer solar cell
Materials described outside the worked examples.
graphene oxide
nanostructures (functionalized with carboxylic acid groups)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 shows (a) current density-voltage characteristics of P₃HT:PCBM solar cells with GO as the hole transporting layer (inset). A small change in the …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.1–1000 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,917,255Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows (a) current density-voltage characteristics of P₃HT:PCBM solar cells with GO as the hole transporting layer (inset). A small change in the …
FIG. 2 shows addition of a small amount of SWCNTs into GO (GO:SWCNTs = 1:0.05, w/w) can increase, even prominently, the FF and Js c in devices fabricated with …
FIG. 3 shows SEM images of thin films deposited on ITO spin coated from (a) GO (about 0.15 wt %), (b) about 1:0.2 GO:SWCNTs and (c) about 1:0.5 GO:SWCNTs …
FIG. 4 shows (a) current density-voltage characteristics of devices made on 25 unmodified ITO (inverted triangle), with GO layer (open circle, spin coated from …
FIG. 5 shows schematically a cross-sectional view of a photovoltaic device according to one embodiment of the invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming a graphene oxide (GO) based layer used in a photovoltaic cell, comprising the steps of: (a) preparing a solution of GO by dispersing the GO in deionized water; (b) preparing a solution of nanostructures by dispersing the nanostructures in water; and (c) applying the solution of GO and the solution of nanostructures onto a surface of a substrate to form a GO based layer with the plurality of nanostructures, wherein a mass ratio of the GO and the nanostructures in the GO based la v er is in a range of about 1:0.01 w/w to 1:0.5 w/w. Currently amended
The method of claim 1, wherein the substrate is an indium tin oxide (I TO) layer. Original
The method of claim 1, wherein the nanostructures comprises carbon nanotubes, or nanofibers. Original
The method of claim 1, wherein the step of preparing the solution of nanostructures comprises the steps of: ultrasonicating a mixture formed by dispersing the nanostructures in water for a first period of time; and centrifugating the ultrasonicated mixture at a predetermined speed for a second period of time. Previously presented
The method of claim 1, wherein the step of applying the solution of GO and the solution of nanostructures onto the surface of the substrate comprises the steps of: (a) mixing the solution of GO and the solution of nanostructures to form a dispersion of the GO and the nanostructures; (b) spin coating the GO and nanostructures dispersion on the surface of the substrate to form a spin coated film of the GO and nanostructures dispersion thereon; and (c) thermally annealing the spin coated film to form the GO based layer. Original
. Canceled
10-31.. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
photovoltaic cell/polymer solar cell
Materials described outside the worked examples.
graphene oxide
nanostructures (functionalized with carboxylic acid groups)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 shows (a) current density-voltage characteristics of P₃HT:PCBM solar cells with GO as the hole transporting layer (inset). A small change in the …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.1–1000 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
deionized water
H₂O
indium tin oxide
nanofibers
single walled carbon nanotubes
multi-walled carbon nanotubes
PEDOT:PSS
GO and nanostructures composite layer
FIG. 3 shows SEM images of thin films deposited on ITO spin coated from (a) GO (about 0.15 wt %), (b) about 1:0.2 GO:SWCNTs and (c) about 1:0.5 GO:SWCNTs …
FIG. 4 shows (a) current density-voltage characteristics of devices made on 25 unmodified ITO (inverted triangle), with GO layer (open circle, spin coated from …
| — |
Thickness | 3–4 nm | — |
deionized water
H₂O
indium tin oxide
nanofibers
single walled carbon nanotubes
multi-walled carbon nanotubes
PEDOT:PSS
GO and nanostructures composite layer
FIG. 3 shows SEM images of thin films deposited on ITO spin coated from (a) GO (about 0.15 wt %), (b) about 1:0.2 GO:SWCNTs and (c) about 1:0.5 GO:SWCNTs …
FIG. 4 shows (a) current density-voltage characteristics of devices made on 25 unmodified ITO (inverted triangle), with GO layer (open circle, spin coated from …
| — |
Thickness | 3–4 nm | — |
deionized water
H₂O
indium tin oxide
nanofibers
single walled carbon nanotubes
multi-walled carbon nanotubes
PEDOT:PSS
GO and nanostructures composite layer
FIG. 3 shows SEM images of thin films deposited on ITO spin coated from (a) GO (about 0.15 wt %), (b) about 1:0.2 GO:SWCNTs and (c) about 1:0.5 GO:SWCNTs …
FIG. 4 shows (a) current density-voltage characteristics of devices made on 25 unmodified ITO (inverted triangle), with GO layer (open circle, spin coated from …
| — |
Thickness | 3–4 nm | — |
deionized water
H₂O
indium tin oxide
nanofibers
single walled carbon nanotubes
multi-walled carbon nanotubes
PEDOT:PSS
GO and nanostructures composite layer
FIG. 3 shows SEM images of thin films deposited on ITO spin coated from (a) GO (about 0.15 wt %), (b) about 1:0.2 GO:SWCNTs and (c) about 1:0.5 GO:SWCNTs …
FIG. 4 shows (a) current density-voltage characteristics of devices made on 25 unmodified ITO (inverted triangle), with GO layer (open circle, spin coated from …
| — |
Thickness | 3–4 nm | — |